JP2012136388A5 - - Google Patents

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JP2012136388A5
JP2012136388A5 JP2010289972A JP2010289972A JP2012136388A5 JP 2012136388 A5 JP2012136388 A5 JP 2012136388A5 JP 2010289972 A JP2010289972 A JP 2010289972A JP 2010289972 A JP2010289972 A JP 2010289972A JP 2012136388 A5 JP2012136388 A5 JP 2012136388A5
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JP2010289972A
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JP5439353B2 (ja
JP2012136388A (ja
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JP2010289972A 2010-12-27 2010-12-27 SiC単結晶の製造装置及びそれに用いられる坩堝 Active JP5439353B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010289972A JP5439353B2 (ja) 2010-12-27 2010-12-27 SiC単結晶の製造装置及びそれに用いられる坩堝

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010289972A JP5439353B2 (ja) 2010-12-27 2010-12-27 SiC単結晶の製造装置及びそれに用いられる坩堝

Publications (3)

Publication Number Publication Date
JP2012136388A JP2012136388A (ja) 2012-07-19
JP2012136388A5 true JP2012136388A5 (OSRAM) 2012-08-30
JP5439353B2 JP5439353B2 (ja) 2014-03-12

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JP2010289972A Active JP5439353B2 (ja) 2010-12-27 2010-12-27 SiC単結晶の製造装置及びそれに用いられる坩堝

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JP (1) JP5439353B2 (OSRAM)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6001664B2 (ja) * 2012-07-27 2016-10-05 京セラ株式会社 坩堝、結晶成長装置および結晶成長方法
KR101707350B1 (ko) * 2012-09-04 2017-02-15 신닛테츠스미킨 카부시키카이샤 SiC 단결정의 제조장치 및 제조방법
JP6231375B2 (ja) * 2013-12-25 2017-11-15 京セラ株式会社 坩堝、結晶製造装置および結晶の製造方法
JP6279930B2 (ja) * 2014-02-27 2018-02-14 京セラ株式会社 結晶製造装置および結晶の製造方法
US20170306522A1 (en) * 2014-10-17 2017-10-26 Nippon Steel & Sumitomo Metal Corporation APPARATUS FOR PRODUCING SiC SINGLE CRYSTAL BY SOLUTION GROWTH PROCESS AND CRUCIBLE EMPLOYED THEREIN
JP6354615B2 (ja) * 2015-02-18 2018-07-11 トヨタ自動車株式会社 SiC単結晶の製造方法
KR102122739B1 (ko) * 2017-12-19 2020-06-16 한국세라믹기술원 단결정 성장을 위하여 용액에 침잠되는 돌설부를 구비하는 도가니
KR102166452B1 (ko) * 2018-10-26 2020-10-15 한국세라믹기술원 단결정 용액성장 장치 및 단결정 용액성장 방법
US12448701B2 (en) 2021-09-10 2025-10-21 Proterial, Ltd. Single crystal manufacturing method, single crystal manufacturing apparatus and crucible
JP2023124624A (ja) * 2022-02-25 2023-09-06 株式会社プロテリアル 単結晶製造装置及び単結晶製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH085736B2 (ja) * 1987-06-01 1996-01-24 三菱マテリアル株式会社 シリコン単結晶育成方法及び装置
JP4265269B2 (ja) * 2003-04-21 2009-05-20 トヨタ自動車株式会社 SiC単結晶製造炉
JP4196791B2 (ja) * 2003-09-08 2008-12-17 トヨタ自動車株式会社 SiC単結晶の製造方法
JP4475091B2 (ja) * 2004-10-19 2010-06-09 住友金属工業株式会社 炭化珪素単結晶の製造方法
JP4830496B2 (ja) * 2006-01-12 2011-12-07 トヨタ自動車株式会社 SiC単結晶の製造方法
JP2007197231A (ja) * 2006-01-24 2007-08-09 Toyota Motor Corp SiC単結晶の製造方法
JP2008100854A (ja) * 2006-10-17 2008-05-01 Toyota Motor Corp SiC単結晶の製造装置および製造方法
JP2008105896A (ja) * 2006-10-25 2008-05-08 Toyota Motor Corp SiC単結晶の製造方法

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