JP2012136388A5 - - Google Patents
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- JP2012136388A5 JP2012136388A5 JP2010289972A JP2010289972A JP2012136388A5 JP 2012136388 A5 JP2012136388 A5 JP 2012136388A5 JP 2010289972 A JP2010289972 A JP 2010289972A JP 2010289972 A JP2010289972 A JP 2010289972A JP 2012136388 A5 JP2012136388 A5 JP 2012136388A5
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- JP
- Japan
- Prior art keywords
- flow velocity
- average flow
- idb
- furthermore
- idt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Description
［シミュレーション結果］
算出された平均流速を表３に示す。「ＩＤＢ／ＩＤＴ」欄には、内径ＩＤＴに対する内径ＩＤＢの比を示す。さらに、図１１は、表３中の「ＩＤＢ／ＩＤＴ」と「平均流速（ｍｍ／ｓ）との関係を示す図である。図１１中の横軸は、「ＩＤＢ／ＩＤＴ」を示す。表３中の縦軸は、「平均流速（ｍｍ／ｓ）」を示す。
表３及び図３を参照して、各設定条件ともに、平均流速はプラスであり、いずれの設定条件においても上昇流Ｆ１が形成された。さらに、ＩＤＢ／ＩＤＴ値が０．２５〜０．６５の場合、上昇流Ｆ１の平均流速が１０ｍｍ／ｓ以上であった。さらに、ＩＤＢ／ＩＤＴ値が０．３０〜０．６０の場合、それ以外の場合と比較して、平均流速が顕著に高くなり、２０ｍｍ／ｓを超えた。
[simulation result]
The calculated average flow velocity is shown in Table 3. The “ ID B / ID T” column shows the ratio of the inner diameter IDB to the inner diameter IDT. Furthermore, Fig. 11 is a diagram showing the relationship between " ID B / ID T" and "average flow velocity (mm / s)" in Table 3. The horizontal axis in Fig. 11 is " ID B / ID T". Indicates The vertical axis in Table 3 indicates "average flow velocity (mm / s)".
With reference to Table 3 and FIG. 3, the average flow velocity was positive in all the set conditions, and the upflow F1 was formed under any of the set conditions. Furthermore, when the IDB / IDT value was 0.25 to 0.65, the average flow velocity of the upflow F1 was 10 mm / s or more. Furthermore, when the IDB / IDT value was 0.30 to 0.60, the average flow velocity was significantly higher than in the other cases, exceeding 20 mm / s.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010289972A JP5439353B2 (en) | 2010-12-27 | 2010-12-27 | SiC single crystal manufacturing apparatus and crucible used therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010289972A JP5439353B2 (en) | 2010-12-27 | 2010-12-27 | SiC single crystal manufacturing apparatus and crucible used therefor |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012136388A JP2012136388A (en) | 2012-07-19 |
| JP2012136388A5 true JP2012136388A5 (en) | 2012-08-30 |
| JP5439353B2 JP5439353B2 (en) | 2014-03-12 |
Family
ID=46674150
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010289972A Active JP5439353B2 (en) | 2010-12-27 | 2010-12-27 | SiC single crystal manufacturing apparatus and crucible used therefor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5439353B2 (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014017648A1 (en) * | 2012-07-27 | 2014-01-30 | 京セラ株式会社 | Crucible, device for crystal growth, and method for crystal growth |
| WO2014038172A1 (en) * | 2012-09-04 | 2014-03-13 | 新日鐵住金株式会社 | APPARATUS AND METHOD FOR MANUFACTURING SiC SINGLE CRYSTAL |
| JP6231375B2 (en) * | 2013-12-25 | 2017-11-15 | 京セラ株式会社 | Crucible, crystal manufacturing apparatus and crystal manufacturing method |
| JP6279930B2 (en) * | 2014-02-27 | 2018-02-14 | 京セラ株式会社 | Crystal manufacturing apparatus and crystal manufacturing method |
| JPWO2016059790A1 (en) * | 2014-10-17 | 2017-06-29 | 新日鐵住金株式会社 | SiC single crystal production apparatus by solution growth method and crucible used therefor |
| JP6354615B2 (en) * | 2015-02-18 | 2018-07-11 | トヨタ自動車株式会社 | Method for producing SiC single crystal |
| KR102122739B1 (en) * | 2017-12-19 | 2020-06-16 | 한국세라믹기술원 | A crucible designed with protrusion for crystal growth using solution |
| KR102166452B1 (en) * | 2018-10-26 | 2020-10-15 | 한국세라믹기술원 | Apparatus of solution growth for single crystal and method of solution growth for single crystal |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH085736B2 (en) * | 1987-06-01 | 1996-01-24 | 三菱マテリアル株式会社 | Method and apparatus for growing silicon single crystal |
| JP4265269B2 (en) * | 2003-04-21 | 2009-05-20 | トヨタ自動車株式会社 | SiC single crystal manufacturing furnace |
| JP4196791B2 (en) * | 2003-09-08 | 2008-12-17 | トヨタ自動車株式会社 | Method for producing SiC single crystal |
| JP4475091B2 (en) * | 2004-10-19 | 2010-06-09 | 住友金属工業株式会社 | Method for producing silicon carbide single crystal |
| JP4830496B2 (en) * | 2006-01-12 | 2011-12-07 | トヨタ自動車株式会社 | Method for producing SiC single crystal |
| JP2007197231A (en) * | 2006-01-24 | 2007-08-09 | Toyota Motor Corp | METHOD FOR MANUFACTURING SiC SINGLE CRYSTAL |
| JP2008100854A (en) * | 2006-10-17 | 2008-05-01 | Toyota Motor Corp | Apparatus and method of manufacturing sic single crystal |
| JP2008105896A (en) * | 2006-10-25 | 2008-05-08 | Toyota Motor Corp | METHOD FOR PRODUCING SiC SINGLE CRYSTAL |
-
2010
- 2010-12-27 JP JP2010289972A patent/JP5439353B2/en active Active
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