JP2012124472A - 半導体記憶装置 - Google Patents
半導体記憶装置 Download PDFInfo
- Publication number
- JP2012124472A JP2012124472A JP2011245276A JP2011245276A JP2012124472A JP 2012124472 A JP2012124472 A JP 2012124472A JP 2011245276 A JP2011245276 A JP 2011245276A JP 2011245276 A JP2011245276 A JP 2011245276A JP 2012124472 A JP2012124472 A JP 2012124472A
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- semiconductor
- gate electrode
- insulating layer
- memory cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 187
- 239000003990 capacitor Substances 0.000 claims abstract description 59
- 239000012535 impurity Substances 0.000 claims description 47
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 18
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 7
- 239000011787 zinc oxide Substances 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 127
- 239000010408 film Substances 0.000 description 23
- 239000000463 material Substances 0.000 description 18
- 238000010438 heat treatment Methods 0.000 description 13
- 229910007541 Zn O Inorganic materials 0.000 description 12
- 239000001257 hydrogen Substances 0.000 description 12
- 229910052739 hydrogen Inorganic materials 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 12
- 229910052760 oxygen Inorganic materials 0.000 description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 11
- 239000001301 oxygen Substances 0.000 description 11
- 239000012298 atmosphere Substances 0.000 description 8
- 239000013078 crystal Substances 0.000 description 8
- 238000005520 cutting process Methods 0.000 description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 8
- 229910052721 tungsten Inorganic materials 0.000 description 8
- 239000010937 tungsten Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 7
- 239000011701 zinc Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 230000014759 maintenance of location Effects 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 229910044991 metal oxide Inorganic materials 0.000 description 6
- 150000004706 metal oxides Chemical class 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 125000004429 atom Chemical group 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 229910052733 gallium Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000005669 field effect Effects 0.000 description 4
- 229910052735 hafnium Inorganic materials 0.000 description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 208000005156 Dehydration Diseases 0.000 description 3
- 229910019092 Mg-O Inorganic materials 0.000 description 3
- 229910019395 Mg—O Inorganic materials 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 230000018044 dehydration Effects 0.000 description 3
- 238000006297 dehydration reaction Methods 0.000 description 3
- 238000006356 dehydrogenation reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000001747 exhibiting effect Effects 0.000 description 3
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 3
- 229910000449 hafnium oxide Inorganic materials 0.000 description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 3
- 239000011572 manganese Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 3
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910001936 tantalum oxide Inorganic materials 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- -1 modified hafnium silicate Chemical class 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910020923 Sn-O Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
Abstract
【解決手段】メモリセルを、読み出しトランジスタ、書き込みトランジスタ、キャパシタにより構成する。かかる構成において、キャパシタは読み出しトランジスタのゲートにかかる電位を制御する。書き込みトランジスタは、データの書き込みおよび消去を制御するとともに、キャパシタに蓄積された電荷が、該書き込みトランジスタのリーク電流で消失しないように、オフ時の電流が小さいトランジスタで構成する。書き込みトランジスタを構成する半導体層は、読み出しトランジスタのゲート電極とソース領域の間を架橋するように設ける。キャパシタは、読み出しトランジスタのゲート電極と重畳するように設ける。
【選択図】図1
Description
本発明の一実施形態に係る半導体記憶装置について図1と図2を参照して説明する。図1は、半導体記憶装置におけるメモリセルの断面構造を模式的に示す図である。図2は、図1で示されるメモリセルの等価回路を示す。図1および図2は、メモリセル100が第1トランジスタ102、第2トランジスタ104およびキャパシタ106で構成されることを示す。
図4で示すメモリセルは、第2トランジスタ104のオフ電流が極めて小さい場合、キャパシタ106に蓄積した電荷を保持できる期間が長いため、頻繁なリフレッシュ動作(記憶データの再書き込みの動作)を必要とせず、データの書き込みおよび読み出しを高速に行うことができる。また、これにより半導体記憶装置の動作に必要な電力を削減することができる。
第1ワード線112に電位V1を与え、メモリセル100およびメモリセル101の第2トランジスタ104をオン状態とする。このとき、他の行の第1ワード線には電位V0(=0V)を与え、他の行に属するメモリセルの第2トランジスタはオフ状態とする。ビット線108aには電位V2を与え、ビット線108bには電位V3(=0V)を与える。なお、第2ワード線114の電位は0Vとしておく。このとき、共通電位線110は電位V2が与えられている。
メモリセル100およびメモリセル101に接続する第2ワード線114を読み出し電位とする。読み出し電位は、例えば、0Vとする。第2ワード線114に読み出し電位が与えられた場合、メモリセル100の第1トランジスタ102はオン状態、メモリセル101の第1トランジスタはオフ状態となっている。
図3で示されるメモリセルアレイの作製方法について例示する。以下の説明では、図3のA1−A2切断線、B1−B2およびC1−C2切断線に対応する断面構造を参照しながら説明する。
第2トランジスタを構成する第2半導体層132は、低いオフ電流が求められる。例えば、第2トランジスタ104の室温(25℃)でのオフ電流が10zA(1zA(ゼプトアンペア)は1×10−21A)以下であれば、キャパシタ106の容量値が10fF程度である場合に、少なくとも104秒以上のデータ保持が可能である。
101 メモリセル
102 第1トランジスタ
104 第2トランジスタ
106 キャパシタ
108 ビット線
108a ビット線
108b ビット線
110 共通電位線
112 第1ワード線
114 第2ワード線
116 第1半導体層
118 素子分離絶縁層
120 浅い不純物領域
122 第1不純物領域
123 第2不純物領域
124 第1絶縁層
126 第1ゲート電極
128 第2絶縁層
130 第3絶縁層
132 第2半導体層
134 第4絶縁層
136 第2ゲート電極
138 キャパシタ電極
140 コンタクトプラグ
142 第5絶縁層
144 第6絶縁層
146 第7絶縁層
Claims (5)
- ソース領域およびドレイン領域を形成する第1不純物領域および第2不純物領域が設けられた第1半導体層と、前記第1半導体層上に設けられた第1ゲート電極と、前記第1ゲート電極と前記第1半導体層との間に設けられた第1絶縁層と、前記第1ゲート電極の側壁部に設けられた第2絶縁層および第3絶縁層と、を有する第1トランジスタと、
前記第1ゲート電極と前記第1不純物領域の間を架橋するように前記第3絶縁層に沿って設けられた第2半導体層と、前記第2半導体層を被覆する第4絶縁層と、前記第3絶縁層と略重畳するように前記第2半導体層および前記第4絶縁層上に設けられた第2ゲート電極と、を有する第2トランジスタと、
前記第1ゲート電極と、前記第1ゲート電極上の第4絶縁層と、前記第1ゲート電極と略重畳するように設けられた電極と、を有するキャパシタとでメモリセルが構成されていることを特徴とする半導体記憶装置。 - ソース領域およびドレイン領域を形成する第1不純物領域および第2不純物領域が設けられた第1半導体層と、前記第1半導体層上に設けられた第1ゲート電極と、前記第1ゲート電極と前記第1半導体層との間に設けられた第1絶縁層と、前記第1ゲート電極の側壁部に設けられた第2絶縁層および第3絶縁層と、を有する第1トランジスタと、
前記第1ゲート電極と前記第1不純物領域との間を架橋するように前記第3絶縁層に沿って設けられた第2半導体層と、前記第2半導体層を被覆する第4絶縁層と、前記第3絶縁層と略重畳するように前記第2半導体層および前記第4絶縁層上に設けられた第2ゲート電極と、を有する第2トランジスタと、
前記第1ゲート電極と、前記第1ゲート電極上の第4絶縁層と、前記第1ゲート電極と略重畳するように設けられた電極と、を有するキャパシタと
を有し、
前記第1不純物領域がビット線、前記第2不純物領域が共通電位線、前記第2ゲート電極が第1ワード線、前記キャパシタ電極が第2ワード線と接続していることを特徴とする半導体記憶装置。 - 請求項1または請求項2において、前記第2半導体層の一方の端は、前記第1ゲート電極と接触し、他方の端は前記第1不純物領域と接触するコンタクトプラグと接触していることを特徴とする半導体記憶装置。
- 請求項1乃至請求項3のいずれか一項において、前記第1半導体層がシリコン半導体で形成され、前記第2半導体層が酸化物半導体で形成されていることを特徴とする半導体記憶装置。
- 請求項4において、前記酸化物半導体は酸化亜鉛を主成分の一とすることを特徴とする半導体記憶装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011245276A JP5844618B2 (ja) | 2010-11-19 | 2011-11-09 | 半導体装置 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010259547 | 2010-11-19 | ||
JP2010259547 | 2010-11-19 | ||
JP2011245276A JP5844618B2 (ja) | 2010-11-19 | 2011-11-09 | 半導体装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2012124472A true JP2012124472A (ja) | 2012-06-28 |
JP2012124472A5 JP2012124472A5 (ja) | 2014-10-30 |
JP5844618B2 JP5844618B2 (ja) | 2016-01-20 |
Family
ID=46063489
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011245276A Active JP5844618B2 (ja) | 2010-11-19 | 2011-11-09 | 半導体装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8575604B2 (ja) |
JP (1) | JP5844618B2 (ja) |
KR (1) | KR101893609B1 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8975680B2 (en) | 2011-02-17 | 2015-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device and method manufacturing semiconductor memory device |
JP6022880B2 (ja) | 2011-10-07 | 2016-11-09 | 株式会社半導体エネルギー研究所 | 半導体装置及び半導体装置の作製方法 |
US9018629B2 (en) | 2011-10-13 | 2015-04-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
JP6026839B2 (ja) | 2011-10-13 | 2016-11-16 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US20130326151A1 (en) * | 2012-05-31 | 2013-12-05 | Semiconductor Energy Laboratory Co., Ltd. | Memory management system and program |
US8848428B2 (en) * | 2012-07-13 | 2014-09-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Memory architectures having dense layouts |
US9257522B2 (en) | 2012-07-13 | 2016-02-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Memory architectures having dense layouts |
WO2018017962A1 (en) * | 2016-07-22 | 2018-01-25 | Skorpios Technologies, Inc. | On-chip high capacitance termination for transmitters |
US11422322B2 (en) * | 2019-07-12 | 2022-08-23 | Ayar Labs, Inc. | Hybrid multi-wavelength source and associated methods |
US11171140B2 (en) * | 2020-03-18 | 2021-11-09 | Micron Technology, Inc. | Semiconductor memory device and method of forming the same |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62274773A (ja) * | 1986-05-23 | 1987-11-28 | Hitachi Ltd | 半導体記憶装置 |
JPH0254572A (ja) * | 1988-08-18 | 1990-02-23 | Matsushita Electric Ind Co Ltd | 半導体記憶装置 |
JP2000332019A (ja) * | 2000-01-01 | 2000-11-30 | Seiko Epson Corp | 薄膜トランジスタ |
JP2001053164A (ja) * | 1999-08-04 | 2001-02-23 | Sony Corp | 半導体記憶装置 |
JP2001230329A (ja) * | 2000-02-16 | 2001-08-24 | Sony Corp | 半導体記憶装置 |
JP2002319682A (ja) * | 2002-01-04 | 2002-10-31 | Japan Science & Technology Corp | トランジスタ及び半導体装置 |
JP2006502597A (ja) * | 2002-05-21 | 2006-01-19 | ザ・ステート・オブ・オレゴン・アクティング・バイ・アンド・スルー・ザ・ステート・ボード・オブ・ハイヤー・エデュケーション・オン・ビハーフ・オブ・オレゴン・ステート・ユニバーシティ | トランジスタ構造及びその製作方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06326272A (ja) | 1993-05-13 | 1994-11-25 | Fujitsu Ltd | 半導体記憶装置 |
US5757693A (en) | 1997-02-19 | 1998-05-26 | International Business Machines Corporation | Gain memory cell with diode |
KR100308187B1 (ko) * | 1999-11-05 | 2001-11-02 | 윤종용 | 디램 셀 제조방법 및 그에 의해 제조된 디램 셀 |
JP5781720B2 (ja) | 2008-12-15 | 2015-09-24 | ルネサスエレクトロニクス株式会社 | 半導体装置及び半導体装置の製造方法 |
-
2011
- 2011-11-09 JP JP2011245276A patent/JP5844618B2/ja active Active
- 2011-11-10 US US13/293,260 patent/US8575604B2/en not_active Expired - Fee Related
- 2011-11-16 KR KR1020110119507A patent/KR101893609B1/ko active IP Right Grant
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62274773A (ja) * | 1986-05-23 | 1987-11-28 | Hitachi Ltd | 半導体記憶装置 |
JPH0254572A (ja) * | 1988-08-18 | 1990-02-23 | Matsushita Electric Ind Co Ltd | 半導体記憶装置 |
JP2001053164A (ja) * | 1999-08-04 | 2001-02-23 | Sony Corp | 半導体記憶装置 |
JP2000332019A (ja) * | 2000-01-01 | 2000-11-30 | Seiko Epson Corp | 薄膜トランジスタ |
JP2001230329A (ja) * | 2000-02-16 | 2001-08-24 | Sony Corp | 半導体記憶装置 |
JP2002319682A (ja) * | 2002-01-04 | 2002-10-31 | Japan Science & Technology Corp | トランジスタ及び半導体装置 |
JP2006502597A (ja) * | 2002-05-21 | 2006-01-19 | ザ・ステート・オブ・オレゴン・アクティング・バイ・アンド・スルー・ザ・ステート・ボード・オブ・ハイヤー・エデュケーション・オン・ビハーフ・オブ・オレゴン・ステート・ユニバーシティ | トランジスタ構造及びその製作方法 |
Also Published As
Publication number | Publication date |
---|---|
US20120126224A1 (en) | 2012-05-24 |
JP5844618B2 (ja) | 2016-01-20 |
US8575604B2 (en) | 2013-11-05 |
KR101893609B1 (ko) | 2018-08-30 |
KR20120054530A (ko) | 2012-05-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5844618B2 (ja) | 半導体装置 | |
JP6268255B2 (ja) | 半導体装置 | |
KR101970946B1 (ko) | 반도체 기억 장치 및 그 제작 방법 | |
JP5924953B2 (ja) | 半導体装置 | |
JP6276348B2 (ja) | 記憶装置及び記憶装置の作製方法 | |
JP5695912B2 (ja) | 半導体装置 | |
JP5727963B2 (ja) | 半導体装置 | |
US9257452B2 (en) | Portable semiconductor device including transistor with oxide semiconductor layer | |
US8878288B2 (en) | Semiconductor device | |
US20120012837A1 (en) | Semiconductor device | |
US20110216571A1 (en) | Semiconductor memory device and semiconductor device | |
TW201244097A (en) | Semiconductor device and manufacturing method thereof | |
JP2012199528A (ja) | 半導体装置 | |
JP2013084925A (ja) | 半導体装置 | |
US11777502B2 (en) | Logic circuit and semiconductor device formed using unipolar transistor | |
US9001564B2 (en) | Semiconductor device and a method for driving the same | |
US20220045683A1 (en) | Logic circuit formed using unipolar transistor, and semiconductor device | |
JP2014082357A (ja) | 半導体装置 | |
US20230413529A1 (en) | Semiconductor device and semiconductor memory device | |
JP6495878B2 (ja) | 半導体装置 | |
US20070267683A1 (en) | Nonvolatile memory cell of a circuit integrated in a semiconductor chip, method for producing the same, and application of a nonvolatile memory cell |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140912 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20140912 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150728 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20150731 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150806 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20151117 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20151119 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5844618 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |