JP2012122088A - スパッタリング成膜用珪素ターゲットおよび珪素含有薄膜の成膜方法 - Google Patents
スパッタリング成膜用珪素ターゲットおよび珪素含有薄膜の成膜方法 Download PDFInfo
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- JP2012122088A JP2012122088A JP2010271796A JP2010271796A JP2012122088A JP 2012122088 A JP2012122088 A JP 2012122088A JP 2010271796 A JP2010271796 A JP 2010271796A JP 2010271796 A JP2010271796 A JP 2010271796A JP 2012122088 A JP2012122088 A JP 2012122088A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0676—Oxynitrides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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Abstract
【解決手段】n型の珪素ターゲット材10と金属性バッキングプレート20はボンディング層40を介して貼り合わされている。珪素ターゲット材10のボンディング層40側の面には、珪素ターゲット材10よりも仕事関数の小さな材料からなる導電性層30が設けられている。つまり、珪素ターゲット材10は、導電性層30とボンディング層40を介して、金属性バッキングプレート20に貼り合わされる構成となっている。珪素が単結晶の場合、n型珪素の仕事関数は一般に4.05eVであるとされているから、導電性層30の材料の仕事関数は4.05eVよりも小さい必要がある。このような材料としては、ランタノイド元素、希土類元素、アルカリ金属元素、およびアルカリ土類金属元素を主成分とするものがある。
【選択図】図1
Description
20 金属性バッキングプレート
40 ボンディング層
30 導電性層
Claims (6)
- 珪素ターゲット材が金属性バッキングプレートにボンディング材を介して貼り合わされているスパッタリング成膜用珪素ターゲットであって、
前記珪素ターゲット材は導電型がn型の珪素からなり、
前記珪素ターゲット材の前記ボンディング材側の面に、該珪素ターゲット材よりも仕事関数の小さな材料からなる導電性層が設けられていることを特徴とするスパッタリング成膜用珪素ターゲット。 - 前記導電性層は、ランタノイド元素、希土類元素、アルカリ金属元素、およびアルカリ土類金属元素の何れかの元素を含むことを特徴とする請求項1に記載のスパッタリング成膜用珪素ターゲット。
- 前記導電性膜は、Yまたはランタノイドのいずれかを含むことを特徴とする請求項1に記載のスパッタリング成膜用珪素ターゲット。
- 前記珪素ターゲット材は、室温における電気抵抗が、体積抵抗率で1Ωcm以上である、請求項1乃至3の何れか1項に記載のスパッタリング成膜用珪素ターゲット。
- 前記珪素ターゲット材は単結晶である請求項1乃至4の何れか1項に記載のスパッタリング成膜用珪素ターゲット。
- 請求項1乃至5の何れか1項に記載のターゲットを用い、窒素とアルゴンを含有するガスによるスパッタリングを行うことを特徴とする珪素含有薄膜の成膜方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010271796A JP5270647B2 (ja) | 2010-12-06 | 2010-12-06 | スパッタリング成膜用珪素ターゲットおよび珪素含有薄膜の成膜方法 |
US13/302,543 US20120138453A1 (en) | 2010-12-06 | 2011-11-22 | Silicon target for sputtering film formation and method for forming silicon-containing thin film |
KR1020110128748A KR20120062630A (ko) | 2010-12-06 | 2011-12-05 | 스퍼터링 성막용 규소 타겟 및 규소 함유 박막의 성막 방법 |
CN201110455404.6A CN102534502B (zh) | 2010-12-06 | 2011-12-06 | 溅射膜形成用硅靶和形成含硅薄膜的方法 |
US14/312,192 US9812300B2 (en) | 2010-12-06 | 2014-06-23 | Silicon target for sputtering film formation and method for forming silicon-containing thin film |
KR1020170148163A KR20170126428A (ko) | 2010-12-06 | 2017-11-08 | 스퍼터링 성막용 규소 타겟 및 규소 함유 박막의 성막 방법 |
Applications Claiming Priority (1)
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JP2010271796A JP5270647B2 (ja) | 2010-12-06 | 2010-12-06 | スパッタリング成膜用珪素ターゲットおよび珪素含有薄膜の成膜方法 |
Publications (2)
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JP2012122088A true JP2012122088A (ja) | 2012-06-28 |
JP5270647B2 JP5270647B2 (ja) | 2013-08-21 |
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JP2010271796A Active JP5270647B2 (ja) | 2010-12-06 | 2010-12-06 | スパッタリング成膜用珪素ターゲットおよび珪素含有薄膜の成膜方法 |
Country Status (4)
Country | Link |
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US (2) | US20120138453A1 (ja) |
JP (1) | JP5270647B2 (ja) |
KR (2) | KR20120062630A (ja) |
CN (1) | CN102534502B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11180835B2 (en) | 2015-09-25 | 2021-11-23 | Nippon Steel Corporation | Steel sheet |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103774108B (zh) * | 2014-01-26 | 2016-05-04 | 北京京东方显示技术有限公司 | 一种镀膜装置 |
CN104862655A (zh) * | 2015-04-23 | 2015-08-26 | 南京帝优新材料科技有限公司 | 一种大尺寸溅射硅靶材 |
JP6812236B2 (ja) * | 2016-12-27 | 2021-01-13 | Hoya株式会社 | 位相シフトマスクブランク及びこれを用いた位相シフトマスクの製造方法、並びに表示装置の製造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6360274A (ja) * | 1986-09-01 | 1988-03-16 | Hitachi Ltd | スパツタ装置 |
JPH06192828A (ja) * | 1992-12-24 | 1994-07-12 | Sumitomo Chem Co Ltd | 半導体ターゲット |
JPH0760557A (ja) * | 1993-08-31 | 1995-03-07 | Ushio Inc | シリコンと他の金属との接着方法 |
JP2003322955A (ja) * | 2002-04-26 | 2003-11-14 | Hoya Corp | リソグラフィーマスクブランクの製造方法及びリソグラフィーマスク並びにハーフトーン型位相シフトマスクブランク |
Family Cites Families (7)
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US4231816A (en) * | 1977-12-30 | 1980-11-04 | International Business Machines Corporation | Amorphous metallic and nitrogen containing alloy films |
US4329699A (en) * | 1979-03-26 | 1982-05-11 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method of manufacturing the same |
US5320984A (en) * | 1990-12-21 | 1994-06-14 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming a semiconductor film by sputter deposition in a hydrogen atmosphere |
JP2878887B2 (ja) * | 1991-12-26 | 1999-04-05 | 株式会社豊田中央研究所 | 半導体電極構造体 |
DE69426003T2 (de) * | 1993-07-28 | 2001-05-17 | Asahi Glass Co Ltd | Verfahren und Vorrichtung zur Kathodenzerstäubung |
JP3454440B2 (ja) | 1994-03-31 | 2003-10-06 | Tdk株式会社 | スパッタ用シリコンターゲットの製造方法 |
US7431195B2 (en) * | 2003-09-26 | 2008-10-07 | Praxair S.T. Technology, Inc. | Method for centering a sputter target onto a backing plate and the assembly thereof |
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2010
- 2010-12-06 JP JP2010271796A patent/JP5270647B2/ja active Active
-
2011
- 2011-11-22 US US13/302,543 patent/US20120138453A1/en not_active Abandoned
- 2011-12-05 KR KR1020110128748A patent/KR20120062630A/ko not_active Application Discontinuation
- 2011-12-06 CN CN201110455404.6A patent/CN102534502B/zh active Active
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2014
- 2014-06-23 US US14/312,192 patent/US9812300B2/en active Active
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2017
- 2017-11-08 KR KR1020170148163A patent/KR20170126428A/ko not_active Application Discontinuation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6360274A (ja) * | 1986-09-01 | 1988-03-16 | Hitachi Ltd | スパツタ装置 |
JPH06192828A (ja) * | 1992-12-24 | 1994-07-12 | Sumitomo Chem Co Ltd | 半導体ターゲット |
JPH0760557A (ja) * | 1993-08-31 | 1995-03-07 | Ushio Inc | シリコンと他の金属との接着方法 |
JP2003322955A (ja) * | 2002-04-26 | 2003-11-14 | Hoya Corp | リソグラフィーマスクブランクの製造方法及びリソグラフィーマスク並びにハーフトーン型位相シフトマスクブランク |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11180835B2 (en) | 2015-09-25 | 2021-11-23 | Nippon Steel Corporation | Steel sheet |
Also Published As
Publication number | Publication date |
---|---|
CN102534502B (zh) | 2015-04-01 |
US20140318948A1 (en) | 2014-10-30 |
US20120138453A1 (en) | 2012-06-07 |
JP5270647B2 (ja) | 2013-08-21 |
US9812300B2 (en) | 2017-11-07 |
KR20120062630A (ko) | 2012-06-14 |
KR20170126428A (ko) | 2017-11-17 |
CN102534502A (zh) | 2012-07-04 |
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