JP2012109472A5 - - Google Patents

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Publication number
JP2012109472A5
JP2012109472A5 JP2010258466A JP2010258466A JP2012109472A5 JP 2012109472 A5 JP2012109472 A5 JP 2012109472A5 JP 2010258466 A JP2010258466 A JP 2010258466A JP 2010258466 A JP2010258466 A JP 2010258466A JP 2012109472 A5 JP2012109472 A5 JP 2012109472A5
Authority
JP
Japan
Prior art keywords
plasma
yttria
sample
etching
chlorine
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010258466A
Other languages
English (en)
Japanese (ja)
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JP2012109472A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2010258466A priority Critical patent/JP2012109472A/ja
Priority claimed from JP2010258466A external-priority patent/JP2012109472A/ja
Priority to TW099144759A priority patent/TWI445082B/zh
Priority to US13/011,070 priority patent/US8486291B2/en
Priority to KR1020110006328A priority patent/KR101190804B1/ko
Publication of JP2012109472A publication Critical patent/JP2012109472A/ja
Publication of JP2012109472A5 publication Critical patent/JP2012109472A5/ja
Pending legal-status Critical Current

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JP2010258466A 2010-11-19 2010-11-19 プラズマ処理方法 Pending JP2012109472A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2010258466A JP2012109472A (ja) 2010-11-19 2010-11-19 プラズマ処理方法
TW099144759A TWI445082B (zh) 2010-11-19 2010-12-20 Plasma processing method
US13/011,070 US8486291B2 (en) 2010-11-19 2011-01-21 Plasma processing method
KR1020110006328A KR101190804B1 (ko) 2010-11-19 2011-01-21 플라즈마처리방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010258466A JP2012109472A (ja) 2010-11-19 2010-11-19 プラズマ処理方法

Publications (2)

Publication Number Publication Date
JP2012109472A JP2012109472A (ja) 2012-06-07
JP2012109472A5 true JP2012109472A5 (enExample) 2013-11-21

Family

ID=46063349

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010258466A Pending JP2012109472A (ja) 2010-11-19 2010-11-19 プラズマ処理方法

Country Status (4)

Country Link
US (1) US8486291B2 (enExample)
JP (1) JP2012109472A (enExample)
KR (1) KR101190804B1 (enExample)
TW (1) TWI445082B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6273188B2 (ja) 2013-10-31 2018-01-31 東京エレクトロン株式会社 プラズマ処理方法
JP7277334B2 (ja) 2019-10-07 2023-05-18 東京エレクトロン株式会社 温度計測システム及び温度計測方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3592878B2 (ja) * 1997-02-20 2004-11-24 株式会社日立製作所 プラズマクリーニング方法
JP3594759B2 (ja) 1997-03-19 2004-12-02 株式会社日立製作所 プラズマ処理方法
US6379575B1 (en) * 1997-10-21 2002-04-30 Applied Materials, Inc. Treatment of etching chambers using activated cleaning gas
JP4351980B2 (ja) * 2004-09-16 2009-10-28 株式会社日立ハイテクノロジーズ プラズマ処理方法
JP2007036139A (ja) * 2005-07-29 2007-02-08 Sharp Corp プラズマ処理装置およびプラズマクリーニング終点検出方法
KR100755804B1 (ko) 2005-12-27 2007-09-05 주식회사 아이피에스 알루미늄 함유 금속막 및 알루미늄 함유 금속 질화막을증착하는 박막 증착 장치의 세정방법
JP2009188257A (ja) 2008-02-07 2009-08-20 Tokyo Electron Ltd プラズマエッチング方法及びプラズマエッチング装置並びに記憶媒体
JP5064319B2 (ja) * 2008-07-04 2012-10-31 東京エレクトロン株式会社 プラズマエッチング方法、制御プログラム及びコンピュータ記憶媒体
JP2010153508A (ja) * 2008-12-24 2010-07-08 Hitachi High-Technologies Corp 試料のエッチング処理方法

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