JP2012109472A - プラズマ処理方法 - Google Patents

プラズマ処理方法 Download PDF

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Publication number
JP2012109472A
JP2012109472A JP2010258466A JP2010258466A JP2012109472A JP 2012109472 A JP2012109472 A JP 2012109472A JP 2010258466 A JP2010258466 A JP 2010258466A JP 2010258466 A JP2010258466 A JP 2010258466A JP 2012109472 A JP2012109472 A JP 2012109472A
Authority
JP
Japan
Prior art keywords
plasma
processing chamber
processing
etching
sample
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010258466A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012109472A5 (enExample
Inventor
Takeshi Omori
健史 大森
Yasuhiro Nishimori
康博 西森
Hiroaki Ishimura
裕昭 石村
Hitoshi Furubayashi
均 古林
Masamichi Sakaguchi
正道 坂口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi High Technologies Corp
Hitachi High Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Technologies Corp, Hitachi High Tech Corp filed Critical Hitachi High Technologies Corp
Priority to JP2010258466A priority Critical patent/JP2012109472A/ja
Priority to TW099144759A priority patent/TWI445082B/zh
Priority to US13/011,070 priority patent/US8486291B2/en
Priority to KR1020110006328A priority patent/KR101190804B1/ko
Publication of JP2012109472A publication Critical patent/JP2012109472A/ja
Publication of JP2012109472A5 publication Critical patent/JP2012109472A5/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
JP2010258466A 2010-11-19 2010-11-19 プラズマ処理方法 Pending JP2012109472A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2010258466A JP2012109472A (ja) 2010-11-19 2010-11-19 プラズマ処理方法
TW099144759A TWI445082B (zh) 2010-11-19 2010-12-20 Plasma processing method
US13/011,070 US8486291B2 (en) 2010-11-19 2011-01-21 Plasma processing method
KR1020110006328A KR101190804B1 (ko) 2010-11-19 2011-01-21 플라즈마처리방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010258466A JP2012109472A (ja) 2010-11-19 2010-11-19 プラズマ処理方法

Publications (2)

Publication Number Publication Date
JP2012109472A true JP2012109472A (ja) 2012-06-07
JP2012109472A5 JP2012109472A5 (enExample) 2013-11-21

Family

ID=46063349

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010258466A Pending JP2012109472A (ja) 2010-11-19 2010-11-19 プラズマ処理方法

Country Status (4)

Country Link
US (1) US8486291B2 (enExample)
JP (1) JP2012109472A (enExample)
KR (1) KR101190804B1 (enExample)
TW (1) TWI445082B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9330891B2 (en) 2013-10-31 2016-05-03 Tokyo Electron Limited Plasma processing method and plasma processing apparatus
KR20210041512A (ko) 2019-10-07 2021-04-15 도쿄엘렉트론가부시키가이샤 온도 계측 시스템 및 온도 계측 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10233388A (ja) * 1997-02-20 1998-09-02 Hitachi Ltd プラズマクリーニング方法
JP2006086377A (ja) * 2004-09-16 2006-03-30 Hitachi High-Technologies Corp プラズマ処理方法
JP2007036139A (ja) * 2005-07-29 2007-02-08 Sharp Corp プラズマ処理装置およびプラズマクリーニング終点検出方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3594759B2 (ja) 1997-03-19 2004-12-02 株式会社日立製作所 プラズマ処理方法
US6379575B1 (en) * 1997-10-21 2002-04-30 Applied Materials, Inc. Treatment of etching chambers using activated cleaning gas
KR100755804B1 (ko) 2005-12-27 2007-09-05 주식회사 아이피에스 알루미늄 함유 금속막 및 알루미늄 함유 금속 질화막을증착하는 박막 증착 장치의 세정방법
JP2009188257A (ja) 2008-02-07 2009-08-20 Tokyo Electron Ltd プラズマエッチング方法及びプラズマエッチング装置並びに記憶媒体
JP5064319B2 (ja) * 2008-07-04 2012-10-31 東京エレクトロン株式会社 プラズマエッチング方法、制御プログラム及びコンピュータ記憶媒体
JP2010153508A (ja) * 2008-12-24 2010-07-08 Hitachi High-Technologies Corp 試料のエッチング処理方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10233388A (ja) * 1997-02-20 1998-09-02 Hitachi Ltd プラズマクリーニング方法
JP2006086377A (ja) * 2004-09-16 2006-03-30 Hitachi High-Technologies Corp プラズマ処理方法
JP2007036139A (ja) * 2005-07-29 2007-02-08 Sharp Corp プラズマ処理装置およびプラズマクリーニング終点検出方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9330891B2 (en) 2013-10-31 2016-05-03 Tokyo Electron Limited Plasma processing method and plasma processing apparatus
KR20210041512A (ko) 2019-10-07 2021-04-15 도쿄엘렉트론가부시키가이샤 온도 계측 시스템 및 온도 계측 방법
US11668608B2 (en) 2019-10-07 2023-06-06 Tokyo Electron Limited Temperature measurement system and temperature measurement method

Also Published As

Publication number Publication date
KR20120054498A (ko) 2012-05-30
TWI445082B (zh) 2014-07-11
US8486291B2 (en) 2013-07-16
KR101190804B1 (ko) 2012-10-12
TW201222658A (en) 2012-06-01
US20120125890A1 (en) 2012-05-24

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