TWI445082B - Plasma processing method - Google Patents

Plasma processing method Download PDF

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Publication number
TWI445082B
TWI445082B TW099144759A TW99144759A TWI445082B TW I445082 B TWI445082 B TW I445082B TW 099144759 A TW099144759 A TW 099144759A TW 99144759 A TW99144759 A TW 99144759A TW I445082 B TWI445082 B TW I445082B
Authority
TW
Taiwan
Prior art keywords
plasma
sample
gas
processing
etching
Prior art date
Application number
TW099144759A
Other languages
English (en)
Chinese (zh)
Other versions
TW201222658A (en
Inventor
Takeshi Ohmori
Yasuhiro Nishimori
Hiroaki Ishimura
Hitoshi Kobayashi
Masamichi Sakaguchi
Original Assignee
Hitachi High Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Tech Corp filed Critical Hitachi High Tech Corp
Publication of TW201222658A publication Critical patent/TW201222658A/zh
Application granted granted Critical
Publication of TWI445082B publication Critical patent/TWI445082B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
TW099144759A 2010-11-19 2010-12-20 Plasma processing method TWI445082B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010258466A JP2012109472A (ja) 2010-11-19 2010-11-19 プラズマ処理方法

Publications (2)

Publication Number Publication Date
TW201222658A TW201222658A (en) 2012-06-01
TWI445082B true TWI445082B (zh) 2014-07-11

Family

ID=46063349

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099144759A TWI445082B (zh) 2010-11-19 2010-12-20 Plasma processing method

Country Status (4)

Country Link
US (1) US8486291B2 (enExample)
JP (1) JP2012109472A (enExample)
KR (1) KR101190804B1 (enExample)
TW (1) TWI445082B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6273188B2 (ja) 2013-10-31 2018-01-31 東京エレクトロン株式会社 プラズマ処理方法
JP7277334B2 (ja) 2019-10-07 2023-05-18 東京エレクトロン株式会社 温度計測システム及び温度計測方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3592878B2 (ja) * 1997-02-20 2004-11-24 株式会社日立製作所 プラズマクリーニング方法
JP3594759B2 (ja) 1997-03-19 2004-12-02 株式会社日立製作所 プラズマ処理方法
US6379575B1 (en) * 1997-10-21 2002-04-30 Applied Materials, Inc. Treatment of etching chambers using activated cleaning gas
JP4351980B2 (ja) * 2004-09-16 2009-10-28 株式会社日立ハイテクノロジーズ プラズマ処理方法
JP2007036139A (ja) * 2005-07-29 2007-02-08 Sharp Corp プラズマ処理装置およびプラズマクリーニング終点検出方法
KR100755804B1 (ko) 2005-12-27 2007-09-05 주식회사 아이피에스 알루미늄 함유 금속막 및 알루미늄 함유 금속 질화막을증착하는 박막 증착 장치의 세정방법
JP2009188257A (ja) 2008-02-07 2009-08-20 Tokyo Electron Ltd プラズマエッチング方法及びプラズマエッチング装置並びに記憶媒体
JP5064319B2 (ja) * 2008-07-04 2012-10-31 東京エレクトロン株式会社 プラズマエッチング方法、制御プログラム及びコンピュータ記憶媒体
JP2010153508A (ja) * 2008-12-24 2010-07-08 Hitachi High-Technologies Corp 試料のエッチング処理方法

Also Published As

Publication number Publication date
KR20120054498A (ko) 2012-05-30
US8486291B2 (en) 2013-07-16
JP2012109472A (ja) 2012-06-07
KR101190804B1 (ko) 2012-10-12
TW201222658A (en) 2012-06-01
US20120125890A1 (en) 2012-05-24

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees