JP2012104688A - 半導体装置 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 48
- 239000011347 resin Substances 0.000 claims abstract description 51
- 229920005989 resin Polymers 0.000 claims abstract description 51
- 210000000078 claw Anatomy 0.000 claims abstract description 45
- 239000000758 substrate Substances 0.000 claims description 12
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- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2924/13—Discrete devices, e.g. 3 terminal devices
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Abstract
【解決手段】半導体装置は、電力半導体素子の高電圧側主電流電極を外部と接続する主電流外部電極1と、主電流外部電極1が圧入される樹脂ケース2とを備え、主電流外部電極1は、樹脂ケース2に対する圧入固定部及び爪固定部とを備え、爪固定部は、樹脂ケース2の貫通穴を貫通し、折り曲げ可能な爪部4をその先端に有する突起部3を備える。
【選択図】図1
Description
図6は、前提技術に係る半導体装置の構成を示す断面図である。コレクタ外部電極1は、製造が安価に出来るなどの理由から、樹脂ケース2に圧入固定され、製品が組み立てられる。しかし、組立工程中の加熱により樹脂ケース2が膨張して固定が緩くなり、最終製品の状態ではコレクタ外部電極1の浮きが発生してしまう。そこで、本発明は、コレクタ外部電極1に複数個所の突起部を設けることにより、コレクタ外部電極1を樹脂ケース2に強固に固定するものである。
<構成>
図1は、実施の形態1の半導体装置の構成を示す断面図である。図1において実施の形態1の半導体装置は、電力半導体素子のコレクタ電極(図示せず)を外部と接続するコレクタ外部電極1と、コレクタ外部電極1が圧入固定される樹脂ケース2とを備えている。
図3に示すように、コレクタ外部電極1の突起部3が挿入される樹脂ケース2の開口部に面取り加工を施しても良い。これにより、コレクタ外部電極1を樹脂ケース2に挿入する際の作業性が向上する。また、爪部4を含む突起部3の先端にアール加工を施すことによっても、同様の効果を奏する。
本実施の形態の半導体装置は、電力半導体素子のコレクタ電極(高電圧側主電流電極)を外部と接続するコレクタ外部電極1(主電流外部電極)と、コレクタ外部電極1が圧入される樹脂ケース2とを備え、コレクタ外部電極1は、樹脂ケース2に対する圧入固定部及び爪固定部とを備え、爪固定部は、樹脂ケース2の貫通穴を貫通し、折り曲げ可能な爪部4をその先端に有する突起部3を備える。圧入固定部と爪固定部により、複数個所で固定されることにより、コレクタ外部電極1は樹脂ケース2に強固に固定される。また、爪固定部の突起部3が爪部4を有するので、爪部4の引っ掛かりによって、コレクタ外部電極1はより強固に樹脂ケース2に固定される。
<構成>
図4は、実施の形態2に係る半導体装置の構成を示す断面図である。図4では、コレクタ外部電極1の接続部1cと接続する半導体素子も示している。図4において、ヒートシンク5上に基板6a、6bが設けられ、基板6a上に低電圧部である半導体素子7aが、基板6b上に高電圧部である電力半導体素子7b、7cがそれぞれ設けられている。基板6aと半導体素子7a、電力半導体素子7aと基板6b、基板6bと電力半導体素子7cは、それぞれワイヤ8a、8b、8cで接続されている。また、図示しないが、半導体素子7a、電力半導体素子7b、7c及びワイヤ8a,8b,8cは、基板6a、6b、6cと共に絶縁性の封止樹脂で封止されており、低電圧部である半導体素子7aと高電圧部であるコレクタ外部電極1との絶縁が図られている。
折り曲げられた爪部4と接する樹脂ケース2の面に、図5に示すような溝あるいは凹みを設けることにより、爪部4と低電圧部7aとの絶縁距離を長くすることができ、絶縁耐量がさらに向上する。
本実施の形態の半導体装置は、主電流外部電極(コレクタ外部電極1)の下部近傍において基板6a上に設けられ、電力半導体素子の低電圧が主電流電極に接続されたエミッタワイヤ8aを含む低電圧部7aをさらに備え、爪部4を備える突起部3は、コレクタ外部電極1の端子部1aの下部中央よりも、低電圧部7aから遠い位置に設けられるので、爪部4と低電圧部7aとの絶縁距離を確保することができ、高電圧のパワーモジュールにも本実施の形態の半導体装置を適用することが出来る。
Claims (6)
- 電力半導体素子の高電圧側主電流電極を外部と接続する主電流外部電極と、
前記主電流外部電極が圧入される樹脂ケースとを備え、
前記主電流外部電極は、前記樹脂ケースに対する圧入固定部及び爪固定部とを備え、
前記爪固定部は、前記樹脂ケースの貫通穴を貫通し、折り曲げ可能な爪部をその先端に有する突起部を備える、
半導体装置。 - 前記主電流外部電極の下部近傍において基板上に設けられ、前記電力半導体素子の低電圧側主電流電極に接続されたワイヤを含む低電圧部をさらに備え、
前記爪部を備える前記突起部は、前記主電流外部電極の端子部の下部中央よりも、前記低電圧部から遠い位置に設けられる、
請求項1に記載の半導体装置。 - 前記低電圧部を含む前記基板は絶縁性樹脂で封止される、
請求項1又は2に記載の半導体装置。 - 前記爪部の折り曲げ箇所と接する前記樹脂ケースの面は凹凸形状である、
請求項1〜3のいずれかに記載の半導体装置。 - 前記樹脂ケースの貫通穴の開口部に面取り加工が施された、
請求項1〜4のいずれかに記載の半導体装置。 - 前記突起部の先端の角にアール加工が施された、
請求項1〜5のいずれかに記載の半導体装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010252633A JP5460560B2 (ja) | 2010-11-11 | 2010-11-11 | 半導体装置 |
US13/187,711 US8466551B2 (en) | 2010-11-11 | 2011-07-21 | Semiconductor device |
DE102011085313.8A DE102011085313B4 (de) | 2010-11-11 | 2011-10-27 | Halbleitervorrichtung |
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JP2010252633A JP5460560B2 (ja) | 2010-11-11 | 2010-11-11 | 半導体装置 |
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JP2012104688A true JP2012104688A (ja) | 2012-05-31 |
JP5460560B2 JP5460560B2 (ja) | 2014-04-02 |
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JP2010252633A Active JP5460560B2 (ja) | 2010-11-11 | 2010-11-11 | 半導体装置 |
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US (1) | US8466551B2 (ja) |
JP (1) | JP5460560B2 (ja) |
DE (1) | DE102011085313B4 (ja) |
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US20140336326A1 (en) * | 2011-11-24 | 2014-11-13 | Kaneka Corporation | Electric/electronic component using flame-retardant polyester-based resin composition |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0325963A (ja) * | 1989-06-23 | 1991-02-04 | Fuji Electric Co Ltd | 半導体装置 |
JPH0336756A (ja) * | 1989-07-03 | 1991-02-18 | Mitsubishi Electric Corp | 半導体装置 |
JPH04111346A (ja) * | 1990-08-30 | 1992-04-13 | Mitsubishi Electric Corp | 半導体装置 |
JPH08162582A (ja) * | 1994-12-02 | 1996-06-21 | Mitsubishi Electric Corp | 半導体装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59181654A (ja) * | 1983-03-31 | 1984-10-16 | Toshiba Corp | 半導体モジユ−ル用端子板 |
JPH0727639Y2 (ja) * | 1989-10-27 | 1995-06-21 | シャープ株式会社 | 半導体装置 |
US5667392A (en) * | 1995-03-28 | 1997-09-16 | The Whitaker Corporation | Electrical connector with stabilized contact |
CN1152454C (zh) * | 1999-04-22 | 2004-06-02 | 惠特克公司 | 电连接器 |
JP2009088218A (ja) | 2007-09-28 | 2009-04-23 | Dowa Metaltech Kk | 半導体装置 |
DE102008012570B4 (de) * | 2008-03-04 | 2014-02-13 | Infineon Technologies Ag | Leistungshalbleitermodul-System, Leistungshalbleitermodulanordnung und Verfahren zur Herstellung einer Leistungshalbleitermodulanordnung |
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2010
- 2010-11-11 JP JP2010252633A patent/JP5460560B2/ja active Active
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2011
- 2011-07-21 US US13/187,711 patent/US8466551B2/en active Active
- 2011-10-27 DE DE102011085313.8A patent/DE102011085313B4/de active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0325963A (ja) * | 1989-06-23 | 1991-02-04 | Fuji Electric Co Ltd | 半導体装置 |
JPH0336756A (ja) * | 1989-07-03 | 1991-02-18 | Mitsubishi Electric Corp | 半導体装置 |
JPH04111346A (ja) * | 1990-08-30 | 1992-04-13 | Mitsubishi Electric Corp | 半導体装置 |
JPH08162582A (ja) * | 1994-12-02 | 1996-06-21 | Mitsubishi Electric Corp | 半導体装置 |
Also Published As
Publication number | Publication date |
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DE102011085313B4 (de) | 2020-12-24 |
US20120119369A1 (en) | 2012-05-17 |
DE102011085313A1 (de) | 2012-05-16 |
JP5460560B2 (ja) | 2014-04-02 |
US8466551B2 (en) | 2013-06-18 |
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