JP2012089624A - 接合装置及び接合方法 - Google Patents
接合装置及び接合方法 Download PDFInfo
- Publication number
- JP2012089624A JP2012089624A JP2010233874A JP2010233874A JP2012089624A JP 2012089624 A JP2012089624 A JP 2012089624A JP 2010233874 A JP2010233874 A JP 2010233874A JP 2010233874 A JP2010233874 A JP 2010233874A JP 2012089624 A JP2012089624 A JP 2012089624A
- Authority
- JP
- Japan
- Prior art keywords
- heat treatment
- wafer
- joining
- unit
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0657—Stacked arrangements of devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05624—Aluminium [Al] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/751—Means for controlling the bonding environment, e.g. valves, vacuum pumps
- H01L2224/75101—Chamber
- H01L2224/75102—Vacuum chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/75251—Means for applying energy, e.g. heating means in the lower part of the bonding apparatus, e.g. in the apparatus chuck
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/75252—Means for applying energy, e.g. heating means in the upper part of the bonding apparatus, e.g. in the bonding head
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/7526—Polychromatic heating lamp
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/75283—Means for applying energy, e.g. heating means by infrared heating, e.g. infrared heating lamp
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/75301—Bonding head
- H01L2224/75302—Shape
- H01L2224/75303—Shape of the pressing surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/75301—Bonding head
- H01L2224/75312—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/75301—Bonding head
- H01L2224/75314—Auxiliary members on the pressing surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/755—Cooling means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/755—Cooling means
- H01L2224/75501—Cooling means in the lower part of the bonding apparatus, e.g. in the apparatus chuck
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7565—Means for transporting the components to be connected
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/757—Means for aligning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/759—Means for monitoring the connection process
- H01L2224/75901—Means for monitoring the connection process using a computer, e.g. fully- or semi-automatic bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/75981—Apparatus chuck
- H01L2224/75985—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/81001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector involving a temporary auxiliary member not forming part of the bonding apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/812—Applying energy for connecting
- H01L2224/81201—Compression bonding
- H01L2224/81203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
- H01L2224/81204—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding with a graded temperature profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/812—Applying energy for connecting
- H01L2224/8122—Applying energy for connecting with energy being in the form of electromagnetic radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06513—Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01042—Molybdenum [Mo]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
Abstract
【解決手段】接合装置10は、熱処理ユニット20、接合ユニット21を一体に接続した構成を有している。熱処理ユニット20は、重合ウェハWTを載置して熱処理する第1の熱処理板40を有している。接合ユニット21は、重合ウェハWTを載置して熱処理する第2の熱処理板90と、第2の熱処理板90上の重合ウェハWTを押圧する加圧機構80とを有している。第1の熱処理板40は、当該第1の熱処理板40上の重合ウェハWTを冷却する冷媒流路44を有している。各ユニット20、21その内部の雰囲気を所定の真空度まで減圧可能になっている。熱処理ユニット20は、接合ユニット21との間でウェハWTを搬送する搬送機構42を複数有している。
【選択図】図1
Description
10 接合装置
20 熱処理ユニット
21 接合ユニット
22 ゲートバルブ
30 処理容器
35 真空ポンプ
40 第1の熱処理板
41 上部加熱手段
42 搬送機構
43 ヒータ
44 冷媒流路
45 冷媒供給管
46 冷媒排出管
47 空気源
48 冷却水源
49 ミキサー
50 熱交換器
51 循環配管
52 冷凍機
53 昇降ピン
54 貫通孔
55 保持部
60 搬送リング
61 保持部材
62 突出部
70 処理容器
71 容器本体
72 天板
73 シールドベローズ
74 搬入出口
75 吸気口
76 真空ポンプ
77 吸気管
78 底部開口
80 加圧機構
81 押圧部材
81a ヒータ
82 支持部材
83 加圧ベローズ
83a 空気供給管
83b 空気排出管
83c 冷却ジャケット
84 上部アダプタ
85 下部アダプタ
86 くびれ部
87 中間部
88 円盤部
90 第2の熱処理板
95 支持台
100 冷却機構
101 溝部
102 シール材
103 係止部材
104 上部係止部材
105 下部係止部材
106 連結部
110 冷却板
111 連通管
112 冷却水流通板
120 接触部
121 放熱部
122 外周部
123 貫通孔
124 突出部
130 冷却水路
131 冷却水管
200 制御部
JU、JL 接合部
WU 上ウェハ
WL 下ウェハ
WT 重合ウェハ
Claims (4)
- 金属の接合部を有する基板同士を接合する接合装置であって、
前記接合部を当接させて基板を重ねた重合基板を載置して熱処理する第1の熱処理板と、内部の雰囲気を所定の真空度まで減圧する第1の減圧機構と、を備えた熱処理ユニットと、
前記熱処理ユニットで処理された重合基板を載置して熱処理する第2の熱処理板と、前記第2の熱処理板上の重合基板を当該第2の熱処理板側に押圧する加圧機構と、内部の雰囲気を所定の真空度まで減圧する第2の減圧機構と、を備えた接合ユニットと、を有し、
前記前熱処理ユニットと前記後熱処理ユニットは、それぞれ気密に前記接合ユニットに接続され、
前記第1の熱処理板は、前記第1の熱処理板上の重合基板を冷却する冷却機構を備えていることを特徴とする、接合装置。 - 前記熱処理ユニットは、前記接合ユニットとの間で重合基板を搬送する搬送機構を複数有していることを特徴とする、請求項1または2のいずれかに記載の接合装置。
- 前記接合ユニットは、前記第2の熱処理板上の重合基板を冷却する冷却機構を有することを特徴とする、請求項1〜2のいずれかに記載の接合装置。
- 金属の接合部を有する基板同士を接合する接合方法であって、
熱処理ユニットにおいて、前記接合部を当接させて基板を重ねた重合基板を第1の熱処理板に載置して当該重合基板を第1の温度まで加熱する工程と、
その後、内部の雰囲気を所定の真空度まで減圧した接合ユニットにおいて、前記重合基板を第2の熱処理板に載置して当該重合基板を前記第1の温度よりも高い第2の温度に維持しながら、前記重合基板を前記第2の熱処理板側に押圧して当該重合基板を接合する工程と、
前記第2の熱処理板に載置された接合後の重合基板を前記第1の温度まで冷却する工程と、
その後前記熱処理ユニットにおいて、前記重合基板を第1の熱処理板に載置して当該重合基板を前記第1の温度よりも低い第3の温度に冷却する工程と、を有し、
前記接合ユニットにおいて一の重合基板を接合している間、前記熱処理ユニットにおいて、他の重合基板を前記第1の温度まで加熱する工程又は他の重合基板を前記第3の温度まで冷却する工程の少なくともいずれかを行うことを特徴とする、接合方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010233874A JP5129848B2 (ja) | 2010-10-18 | 2010-10-18 | 接合装置及び接合方法 |
KR1020110105847A KR101299779B1 (ko) | 2010-10-18 | 2011-10-17 | 접합 장치 및 접합 방법 |
TW100137456A TWI487016B (zh) | 2010-10-18 | 2011-10-17 | Bonding device and joining method |
CN201110317856.8A CN102456590B (zh) | 2010-10-18 | 2011-10-18 | 接合装置及接合方法 |
US13/275,843 US8286853B2 (en) | 2010-10-18 | 2011-10-18 | Bonding apparatus and bonding method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010233874A JP5129848B2 (ja) | 2010-10-18 | 2010-10-18 | 接合装置及び接合方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012089624A true JP2012089624A (ja) | 2012-05-10 |
JP5129848B2 JP5129848B2 (ja) | 2013-01-30 |
Family
ID=45933257
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010233874A Active JP5129848B2 (ja) | 2010-10-18 | 2010-10-18 | 接合装置及び接合方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8286853B2 (ja) |
JP (1) | JP5129848B2 (ja) |
KR (1) | KR101299779B1 (ja) |
CN (1) | CN102456590B (ja) |
TW (1) | TWI487016B (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5424201B2 (ja) * | 2009-08-27 | 2014-02-26 | アユミ工業株式会社 | 加熱溶融処理装置および加熱溶融処理方法 |
JP5314607B2 (ja) * | 2010-01-20 | 2013-10-16 | 東京エレクトロン株式会社 | 接合装置、接合方法、プログラム及びコンピュータ記憶媒体 |
JP5134673B2 (ja) * | 2010-10-29 | 2013-01-30 | 東京エレクトロン株式会社 | 貼り合わせ装置及び貼り合わせ方法 |
US8870051B2 (en) * | 2012-05-03 | 2014-10-28 | International Business Machines Corporation | Flip chip assembly apparatus employing a warpage-suppressor assembly |
CN103489805A (zh) * | 2012-06-12 | 2014-01-01 | 苏州美图半导体技术有限公司 | 晶圆键合系统 |
KR101320064B1 (ko) * | 2012-06-29 | 2013-10-18 | 주식회사 휴템 | 듀얼 쿨링을 이용한 웨이퍼 본더 및 웨이퍼 본딩 방법 |
KR20160048301A (ko) * | 2014-10-23 | 2016-05-04 | 삼성전자주식회사 | 본딩 장치 및 그를 포함하는 기판 제조 설비 |
DE102015106298B4 (de) * | 2015-04-24 | 2017-01-26 | Semikron Elektronik Gmbh & Co. Kg | Vorrichtung, Verfahren und Anlage zur inhomogenen Abkühlung eines flächigen Gegenstandes |
KR102429619B1 (ko) * | 2015-11-18 | 2022-08-04 | 삼성전자주식회사 | 본딩 스테이지와 이를 포함하는 본딩 장치 |
CN107331604B (zh) * | 2016-04-29 | 2020-06-16 | 上海微电子装备(集团)股份有限公司 | 一种键合设备 |
CN108511363B (zh) * | 2017-02-28 | 2020-09-11 | 上海微电子装备(集团)股份有限公司 | 一种键合装置 |
CN109065476B (zh) * | 2018-07-26 | 2023-08-22 | 苏州锐杰微科技集团有限公司 | 真空键合装置 |
US11152328B2 (en) * | 2018-12-13 | 2021-10-19 | eLux, Inc. | System and method for uniform pressure gang bonding |
US20220277979A1 (en) * | 2019-05-08 | 2022-09-01 | Tokyo Electron Limited | Bonding apparatus, bonding system, and bonding method |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009164197A (ja) * | 2007-12-28 | 2009-07-23 | Semiconductor Energy Lab Co Ltd | 半導体基板製造装置および半導体基板製造システム |
JP2009272471A (ja) * | 2008-05-08 | 2009-11-19 | Sumco Corp | 貼り合わせウェーハの製造方法 |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2633903B2 (ja) * | 1988-04-28 | 1997-07-23 | 株式会社日立製作所 | パッケージの製造方法 |
JP2899130B2 (ja) * | 1991-05-09 | 1999-06-02 | 日立テクノエンジニアリング株式会社 | 高真空ホットプレス |
US5632435A (en) * | 1992-05-27 | 1997-05-27 | Sulzer-Escher Wyss Ag | Process for the production of a soldered joint |
US5370301A (en) * | 1994-01-04 | 1994-12-06 | Texas Instruments Incorporated | Apparatus and method for flip-chip bonding |
US5632434A (en) * | 1995-06-29 | 1997-05-27 | Regents Of The University Of California | Pressure activated diaphragm bonder |
US6059170A (en) * | 1998-06-24 | 2000-05-09 | International Business Machines Corporation | Method and apparatus for insulating moisture sensitive PBGA's |
JP3742000B2 (ja) * | 2000-11-30 | 2006-02-01 | 富士通株式会社 | プレス装置 |
JP3940574B2 (ja) * | 2001-09-26 | 2007-07-04 | ミナミ株式会社 | フィルム状印刷体の一貫印刷実装装置におけるリフロー装置 |
JP2003121023A (ja) * | 2001-10-10 | 2003-04-23 | Tokyo Electron Ltd | 熱媒体循環装置及びこれを用いた熱処理装置 |
WO2003060973A1 (fr) * | 2002-01-10 | 2003-07-24 | Tokyo Electron Limited | Dispositif de traitement |
TW558789B (en) * | 2002-05-02 | 2003-10-21 | Hitachi High Tech Corp | Semiconductor processing device and diagnostic method of semiconductor processing device |
JP2004207436A (ja) | 2002-12-25 | 2004-07-22 | Ayumi Kogyo Kk | ウエハのプリアライメント方法とその装置ならびにウエハの貼り合わせ方法とその装置 |
JP4380236B2 (ja) * | 2003-06-23 | 2009-12-09 | 東京エレクトロン株式会社 | 載置台及び熱処理装置 |
JP2005026608A (ja) * | 2003-07-02 | 2005-01-27 | Tokyo Electron Ltd | 接合方法および接合装置 |
JP3921459B2 (ja) * | 2003-07-11 | 2007-05-30 | ソニーケミカル&インフォメーションデバイス株式会社 | 電気部品の実装方法及び実装装置 |
JP4732699B2 (ja) * | 2004-02-17 | 2011-07-27 | 神港精機株式会社 | はんだ付け方法 |
JP4736355B2 (ja) * | 2004-06-08 | 2011-07-27 | パナソニック株式会社 | 部品実装方法 |
JP2006202938A (ja) * | 2005-01-20 | 2006-08-03 | Kojiro Kobayashi | 半導体装置及びその製造方法 |
JP4720469B2 (ja) | 2005-12-08 | 2011-07-13 | 株式会社ニコン | 貼り合わせ半導体装置製造用の露光方法 |
JP4640170B2 (ja) * | 2005-12-28 | 2011-03-02 | 株式会社豊田自動織機 | 半田付け方法及び半導体モジュールの製造方法並びに半田付け装置 |
JP4825029B2 (ja) * | 2006-03-17 | 2011-11-30 | 富士通セミコンダクター株式会社 | ボンディング装置及びボンディング方法 |
JP2009049051A (ja) | 2007-08-14 | 2009-03-05 | Elpida Memory Inc | 半導体基板の接合方法及びそれにより製造された積層体 |
SG188141A1 (en) * | 2008-02-08 | 2013-03-28 | Lam Res Corp | A protective coating for a plasma processing chamber part and a method of use |
WO2010019430A2 (en) * | 2008-08-12 | 2010-02-18 | Applied Materials, Inc. | Electrostatic chuck assembly |
WO2010055730A1 (ja) * | 2008-11-14 | 2010-05-20 | 東京エレクトロン株式会社 | 貼り合わせ装置及び貼り合わせ方法 |
WO2010095720A1 (ja) * | 2009-02-20 | 2010-08-26 | 日本碍子株式会社 | セラミックス-金属接合体及びその製法 |
US8753447B2 (en) * | 2009-06-10 | 2014-06-17 | Novellus Systems, Inc. | Heat shield for heater in semiconductor processing apparatus |
-
2010
- 2010-10-18 JP JP2010233874A patent/JP5129848B2/ja active Active
-
2011
- 2011-10-17 KR KR1020110105847A patent/KR101299779B1/ko not_active IP Right Cessation
- 2011-10-17 TW TW100137456A patent/TWI487016B/zh not_active IP Right Cessation
- 2011-10-18 CN CN201110317856.8A patent/CN102456590B/zh not_active Expired - Fee Related
- 2011-10-18 US US13/275,843 patent/US8286853B2/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009164197A (ja) * | 2007-12-28 | 2009-07-23 | Semiconductor Energy Lab Co Ltd | 半導体基板製造装置および半導体基板製造システム |
JP2009272471A (ja) * | 2008-05-08 | 2009-11-19 | Sumco Corp | 貼り合わせウェーハの製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US8286853B2 (en) | 2012-10-16 |
CN102456590A (zh) | 2012-05-16 |
JP5129848B2 (ja) | 2013-01-30 |
KR101299779B1 (ko) | 2013-08-23 |
CN102456590B (zh) | 2014-07-16 |
US20120091187A1 (en) | 2012-04-19 |
TW201234450A (en) | 2012-08-16 |
KR20120040113A (ko) | 2012-04-26 |
TWI487016B (zh) | 2015-06-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5091296B2 (ja) | 接合装置 | |
JP5129848B2 (ja) | 接合装置及び接合方法 | |
TWI436447B (zh) | A substrate stage, a substrate processing device, and a substrate processing system | |
JP4317608B2 (ja) | 成膜装置 | |
JP2013065677A (ja) | 接合方法、プログラム、コンピュータ記憶媒体、接合装置及び接合システム | |
WO2011118346A1 (ja) | 基板処理装置、基板処理方法、プログラム及びコンピュータ記憶媒体 | |
JP2011151127A (ja) | 接合装置、接合方法、プログラム及びコンピュータ記憶媒体 | |
TWI760499B (zh) | 焊接頭及具有其的焊接裝置 | |
TWI636843B (zh) | 接合裝置、接合系統、接合方法及電腦記憶媒體 | |
TW201926538A (zh) | 基板承載桌 | |
KR102439615B1 (ko) | 본딩 헤드 및 이를 갖는 본딩 장치 | |
JP6415328B2 (ja) | 接合方法、プログラム、コンピュータ記憶媒体、接合装置及び接合システム | |
JP7149786B2 (ja) | 載置ユニット及び処理装置 | |
JP2012089623A (ja) | 押圧用アダプタ | |
JP2015076457A (ja) | 基板処理装置 | |
TWI630048B (zh) | Bonding device, bonding system, bonding method, and computer memory medium | |
US20230163012A1 (en) | Substrate support and substrate processing apparatus | |
TW201642986A (zh) | 接合裝置、接合系統、接合方法及電腦記憶媒體 | |
JP2017220571A (ja) | 接合方法、プログラム、コンピュータ記憶媒体、接合装置及び接合システム | |
JP6333184B2 (ja) | 接合装置、接合システム、接合方法、プログラム及びコンピュータ記憶媒体 | |
JP2016129199A (ja) | 接合装置、接合システム、接合方法、プログラム及びコンピュータ記憶媒体 | |
JP2015207690A (ja) | 接合方法、プログラム、コンピュータ記憶媒体、接合装置及び接合システム | |
JP2016129196A (ja) | 接合装置、接合システム、接合方法、プログラム及びコンピュータ記憶媒体 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20120622 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120828 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121004 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20121030 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20121102 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5129848 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20151109 Year of fee payment: 3 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |