JP2012080076A - 半導体装置とその製造方法 - Google Patents
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- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
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- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823412—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
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- H01L21/8232—Field-effect technology
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Abstract
【課題】DSB基板の表面領域上に少なくとも3つの異なるゲート酸化膜厚を有する半導体装置とその製造方法を提供する。
【解決手段】Si(100)面方位領域と、Si(110)面方位領域を基板の同一表面に具備する直接シリコン接合基板(Direct Silicon Bonded 基板:DSB基板)を設け、前記直接シリコン接合基板の表面にゲート酸化膜を形成するため、第1の酸化プロセスを行ない、前記直接シリコン接合基板のSi(110)面方位領域に形成された前記ゲート酸化膜は、前記直接シリコン接合基板のSi(100)面方位領域上に形成されたゲート酸化膜より厚く、前記DSB基板の表面の一部から前記ゲート酸化膜を除去し、前記DSB基板上に追加のゲート酸化膜を形成するため、第2の酸化プロセスを行なうという2回の酸化工程により異なる3つのゲート酸化膜厚領域を有するDSB基板を形成することを特徴とする。
【選択図】図1
Description
Claims (7)
- Si(100)面方位領域と、Si(110)面方位領域を基板の同一表面に具備する直接シリコン接合基板(Direct Silicon Bonded 基板:DSB基板)を設け、
前記直接シリコン接合基板の表面にゲート酸化膜を形成するため、第1の酸化プロセスを行ない、前記直接シリコン接合基板のSi(110)面方位領域に形成された前記ゲート酸化膜は、前記直接シリコン接合基板のSi(100)面方位領域上に形成されたゲート酸化膜より厚く、
前記DSB基板の表面の一部から前記ゲート酸化膜を除去し、
前記DSB基板上に追加のゲート酸化膜を形成するため、第2の酸化プロセスを行なうという2回の酸化工程により異なる3つのゲート酸化膜厚領域を有するDSB基板を形成することを特徴とする半導体装置の製造方法。 - ゲート酸化膜の第1の領域は、ゲート酸化膜の第2の領域の平均膜厚より少なくとも約10%大きく、ゲート酸化膜の第2の領域は、ゲート酸化膜の第3の領域の平均膜厚より少なくとも約10%大きいことを特徴とする請求項1記載の半導体装置の製造方法。
- 前記異なる3つのゲート酸化膜厚を有するDSB基板を形成する前に、1回だけゲート酸化膜を除去することを特徴とする請求項1記載の半導体装置の製造方法。
- 前記異なる3つのゲート酸化膜厚を有するDSB基板において、厚膜ゲート電界効果トランジスタはN型、P型ともにSi(110)面方位領域に形成され、中厚膜ゲート電界効果トランジスタはN型、P型ともにSi(100)面方位領域に形成され、薄膜ゲート電界効果トランジスタは、N型、P型ともにSi(110)面方位領域とSi(100)面方位領域のいずれの領域にも形成されることを特徴とする請求項1記載の半導体装置の製造方法。
- 表面にSi(110)面方位領域とSi(100)面方位領域の両方を有する半導体基板上にゲート酸化膜を形成するため、第1の酸化プロセスを行なうこと、前記半導体基板上のSi(110)面方位領域上に形成されたゲート酸化膜は、Si(100)面方位領域上に形成されたゲート酸化膜より厚い、
前記半導体基板上に形成されたゲート酸化膜の一部を選択的に除去すること、
前記半導体基板上に追加のゲート酸化膜を形成するため、第2の酸化プロセスを行なうこと、
ゲート酸化膜が異なる平均膜厚を有する少なくとも3つの領域を含む半導体基板を形成すること、
前記ゲート酸化膜の領域のうちの1つは、次に厚いゲート酸化膜の領域より平均膜厚が少なくとも約10%大きいことを特徴とする半導体装置の製造方法。 - 前記異なる3つのゲート酸化膜厚を有する半導体基板を形成する前に、前記ゲート酸化膜の一部を選択的に除去する1回の処理だけが行なわれることを特徴とする請求項5記載の半導体装置の製造方法。
- Si(110)面方位領域とSi(100)面方位領域を有する半導体基板と、
前記半導体基板の表面に形成され、異なる平均膜厚を有する少なくとも3つの領域を含むゲート酸化膜と、
前記ゲート酸化膜の第1の領域は、前記ゲート酸化膜の第2の領域の平均膜厚より少なくとも約10%大きく、ゲート酸化膜の前記第2の領域は、ゲート酸化膜の第3の領域の平均膜厚より少なくとも約10%大きく、前記第1の領域は、前記Si(110)面方位領域上に形成されることを特徴とする半導体装置。
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US12/895,095 | 2010-09-30 | ||
US12/895,095 US20120080777A1 (en) | 2010-09-30 | 2010-09-30 | Triple oxidation on dsb substrate |
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US8999861B1 (en) * | 2011-05-11 | 2015-04-07 | Suvolta, Inc. | Semiconductor structure with substitutional boron and method for fabrication thereof |
CN102779745B (zh) * | 2012-07-23 | 2016-07-06 | 上海华虹宏力半导体制造有限公司 | 控制沟槽晶体管栅介质层厚度的方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0594928A (ja) * | 1991-10-01 | 1993-04-16 | Toshiba Corp | 半導体基体およびその製造方法とその半導体基体を用いた半導体装置 |
JPH0878533A (ja) * | 1994-08-31 | 1996-03-22 | Nec Corp | 半導体装置及びその製造方法 |
JP2002009168A (ja) * | 2000-06-19 | 2002-01-11 | Nec Corp | 半導体装置及びその製造方法 |
US20070138571A1 (en) * | 2005-12-06 | 2007-06-21 | Takashi Nakabayashi | Semiconductor device and method for fabricating the same |
US20090108412A1 (en) * | 2007-10-29 | 2009-04-30 | Hiroshi Itokawa | Semiconductor substrate and method for manufacturing a semiconductor substrate |
-
2010
- 2010-09-30 US US12/895,095 patent/US20120080777A1/en not_active Abandoned
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2011
- 2011-07-04 TW TW100123514A patent/TW201218258A/zh unknown
- 2011-07-08 JP JP2011152119A patent/JP2012080076A/ja active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0594928A (ja) * | 1991-10-01 | 1993-04-16 | Toshiba Corp | 半導体基体およびその製造方法とその半導体基体を用いた半導体装置 |
JPH0878533A (ja) * | 1994-08-31 | 1996-03-22 | Nec Corp | 半導体装置及びその製造方法 |
US5811336A (en) * | 1994-08-31 | 1998-09-22 | Nec Corporation | Method of forming MOS transistors having gate insulators of different thicknesses |
JP2002009168A (ja) * | 2000-06-19 | 2002-01-11 | Nec Corp | 半導体装置及びその製造方法 |
US20070138571A1 (en) * | 2005-12-06 | 2007-06-21 | Takashi Nakabayashi | Semiconductor device and method for fabricating the same |
US20090108412A1 (en) * | 2007-10-29 | 2009-04-30 | Hiroshi Itokawa | Semiconductor substrate and method for manufacturing a semiconductor substrate |
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