JP2012074415A - 太陽電池の製造方法 - Google Patents
太陽電池の製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 42
- 239000004065 semiconductor Substances 0.000 claims abstract description 177
- 239000000758 substrate Substances 0.000 claims abstract description 84
- 238000000034 method Methods 0.000 claims abstract description 39
- 238000005530 etching Methods 0.000 claims description 47
- 239000002019 doping agent Substances 0.000 claims description 20
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 230000001681 protective effect Effects 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 119
- 239000010408 film Substances 0.000 description 50
- 238000009792 diffusion process Methods 0.000 description 14
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 12
- 239000003795 chemical substances by application Substances 0.000 description 12
- 239000000243 solution Substances 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 239000011241 protective layer Substances 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 239000000470 constituent Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 238000010248 power generation Methods 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000009751 slip forming Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 244000126211 Hericium coralloides Species 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
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- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
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- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
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- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
【解決手段】半導体基板10を有し、第1の主面にp型表面13p及びn型表面12nが露出し、第2の主面にテクスチャ構造を有する太陽電池基板20と、p型表面の上に配されたp側電極15と、n型表面の上に配されたn側電極14と、第1の主面上に形成され、p側電極15とn側電極14とを隔離する絶縁層18とを備える太陽電池1を製造する。第1の主面を覆う絶縁膜22を形成し、その後、第2の主面にテクスチャ構造を形成する。絶縁膜22の一部を除去することにより絶縁層18を形成する。
【選択図】図4
Description
(太陽電池1の構成)
まず、本実施形態において製造される太陽電池1の構成について、図1及び図2を参照しながら詳細に説明する。
上記第1の実施形態では、半導体基板10と、非晶質半導体層12,13とによって太陽電池基板20が構成されている例について説明した。但し、本発明は、この構成に限定されない。例えば、図11に示すように、太陽電池基板20は、裏面10bに露出しているp型ドーパント拡散部31nとn型ドーパント拡散部31pとが形成されている半導体基板10により構成されていてもよい。この場合は、以下のようにして太陽電池1を製造することができる。
10…半導体基板
10a…受光面
10b…裏面
12…n型非晶質半導体層
12n…n型表面
13…p型非晶質半導体層
13p…p型表面
14…n側電極
15…p側電極
18…絶縁層
20…太陽電池基板
21…n型非晶質半導体層
22…絶縁膜
23…p型非晶質半導体層
31n…p型ドーパント拡散部
31p…n型ドーパント拡散部
Claims (11)
- 半導体基板を有し、第1の主面にp型表面及びn型表面が露出し、第2の主面にテクスチャ構造を有する太陽電池基板と、
前記p型表面の上に配されたp側電極と、
前記n型表面の上に配されたn側電極と、
前記第1の主面上に形成され、前記p側電極と前記n側電極とを隔離する絶縁層と、
を備える太陽電池の製造方法であって、
前記第1の主面を覆う絶縁膜を形成し、その後、前記第2の主面に前記テクスチャ構造を形成する工程と、
前記絶縁膜の一部を除去することにより前記絶縁層を形成する工程と、
を備える、太陽電池の製造方法。 - 前記第2の主面に前記テクスチャ構造を形成する際に、前記第1の主面を保護する保護膜として前記絶縁膜を用いる、請求項1に記載の太陽電池の製造方法。
- エッチング剤を用いて前記第2の主面をエッチングすることにより前記テクスチャ構造を形成し、
前記絶縁膜として、前記エッチング剤によるエッチング速度が前記半導体基板よりも低い絶縁膜を形成する、請求項1または2に記載の太陽電池の製造方法。 - 前記絶縁膜を酸化シリコン、窒化シリコンまたは酸窒化シリコンにより形成する、請求項1〜3のいずれか一項に記載の太陽電池の製造方法。
- 前記半導体基板の一の主面の上に、第1の導電型を有する第1の半導体層を形成し、さらに、前記第1の半導体層の上に前記絶縁膜を形成し、
前記半導体基板の他の主面に前記テクスチャ構造を形成した後に、前記絶縁膜及び前記第1の半導体層の一部を除去することにより前記第1の主面の一部を露出させ、当該第1の主面の露出部の上に第2の導電型を有する第2の半導体層を形成することにより、前記半導体基板と前記第1及び第2の半導体層とを有する前記太陽電池基板を得る、請求項1〜4のいずれか一項に記載の太陽電池の製造方法。 - 前記第2の半導体層を、前記露出部及び前記絶縁層を覆うように形成し、前記絶縁膜及び前記第2の半導体層の前記絶縁膜の上に位置する部分の一部を除去することにより前記第1の半導体層を露出させ、その後、前記p側電極及び前記n側電極を形成する、請求項5に記載の太陽電池の製造方法。
- 前記第1及び第2の半導体層と前記絶縁層とを覆うように導電層を形成し、前記導電層を前記絶縁層の上で分断することにより前記p側電極及び前記n側電極を形成する、請求項5または6に記載の太陽電池の製造方法。
- 前記第1及び第2の半導体層の少なくとも一方を、非晶質半導体により形成する、請求項5〜7のいずれか一項に記載の太陽電池の製造方法。
- 前記半導体基板と、非晶質半導体からなる前記第1及び第2の半導体層の少なくとも一方の半導体層との間に、真性の非晶質半導体層を形成する工程をさらに備える、請求項8に記載の太陽電池の製造方法。
- 前記半導体基板の一の主面の一部からp型ドーパントを拡散させると共に、残りの少なくとも一部からn型ドーパントを拡散させ、他の主面に前記テクスチャ構造を形成することにより前記太陽電池基板を得る、請求項1〜4のいずれか一項に記載の太陽電池の製造方法。
- 前記半導体基板として、結晶性半導体基板を用いる、請求項1〜10のいずれか一項に記載の太陽電池の製造方法。
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JP2010215917A JP5595850B2 (ja) | 2010-09-27 | 2010-09-27 | 太陽電池の製造方法 |
PCT/JP2011/068374 WO2012043080A1 (ja) | 2010-09-27 | 2011-08-11 | 太陽電池の製造方法 |
EP11828641.8A EP2624306A4 (en) | 2010-09-27 | 2011-08-11 | Process for manufacturing solar cell |
US13/848,192 US8865510B2 (en) | 2010-09-27 | 2013-03-21 | Method of manufacturing solar cell |
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Cited By (3)
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JPWO2013161030A1 (ja) * | 2012-04-26 | 2015-12-21 | パナソニックIpマネジメント株式会社 | 太陽電池モジュール及び太陽電池モジュールの製造方法 |
US9294034B2 (en) | 2012-05-31 | 2016-03-22 | Panasonic intellectual property Management co., Ltd | Measurement device for texture size, manufacturing system for solar cell, and manufacturing method for solar cell |
JP2016164930A (ja) * | 2015-03-06 | 2016-09-08 | シャープ株式会社 | 光電変換素子およびその製造方法 |
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WO2012026358A1 (ja) * | 2010-08-24 | 2012-03-01 | 三洋電機株式会社 | 太陽電池及びその製造方法 |
WO2012132835A1 (ja) * | 2011-03-25 | 2012-10-04 | 三洋電機株式会社 | 太陽電池 |
JPWO2018056143A1 (ja) * | 2016-09-23 | 2019-07-04 | 石原ケミカル株式会社 | 太陽電池セルの製造方法 |
US10141462B2 (en) | 2016-12-19 | 2018-11-27 | Sunpower Corporation | Solar cells having differentiated P-type and N-type architectures |
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JP2006324590A (ja) * | 2005-05-20 | 2006-11-30 | Sharp Corp | 裏面電極型太陽電池とその製造方法 |
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JPWO2013161030A1 (ja) * | 2012-04-26 | 2015-12-21 | パナソニックIpマネジメント株式会社 | 太陽電池モジュール及び太陽電池モジュールの製造方法 |
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JP2016164930A (ja) * | 2015-03-06 | 2016-09-08 | シャープ株式会社 | 光電変換素子およびその製造方法 |
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US8865510B2 (en) | 2014-10-21 |
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