JP2012072475A5 - - Google Patents
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- Publication number
- JP2012072475A5 JP2012072475A5 JP2010219947A JP2010219947A JP2012072475A5 JP 2012072475 A5 JP2012072475 A5 JP 2012072475A5 JP 2010219947 A JP2010219947 A JP 2010219947A JP 2010219947 A JP2010219947 A JP 2010219947A JP 2012072475 A5 JP2012072475 A5 JP 2012072475A5
- Authority
- JP
- Japan
- Prior art keywords
- gas
- flow rate
- film forming
- sccm
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 7
- 229910052719 titanium Inorganic materials 0.000 claims 7
- 239000010936 titanium Substances 0.000 claims 7
- 230000008021 deposition Effects 0.000 claims 5
- 230000015572 biosynthetic process Effects 0.000 claims 4
- 238000005137 deposition process Methods 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 4
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010219947A JP5476269B2 (ja) | 2010-09-29 | 2010-09-29 | 成膜方法及び成膜装置 |
| TW100134922A TWI557263B (zh) | 2010-09-29 | 2011-09-28 | Film forming method and film forming device |
| KR1020110098074A KR101290957B1 (ko) | 2010-09-29 | 2011-09-28 | 성막 방법 및 성막 장치 |
| CN201110303097.XA CN102433546B (zh) | 2010-09-29 | 2011-09-29 | 成膜方法和成膜装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010219947A JP5476269B2 (ja) | 2010-09-29 | 2010-09-29 | 成膜方法及び成膜装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012072475A JP2012072475A (ja) | 2012-04-12 |
| JP2012072475A5 true JP2012072475A5 (enrdf_load_stackoverflow) | 2013-05-16 |
| JP5476269B2 JP5476269B2 (ja) | 2014-04-23 |
Family
ID=45981890
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010219947A Expired - Fee Related JP5476269B2 (ja) | 2010-09-29 | 2010-09-29 | 成膜方法及び成膜装置 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5476269B2 (enrdf_load_stackoverflow) |
| KR (1) | KR101290957B1 (enrdf_load_stackoverflow) |
| CN (1) | CN102433546B (enrdf_load_stackoverflow) |
| TW (1) | TWI557263B (enrdf_load_stackoverflow) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102061749B1 (ko) * | 2012-12-27 | 2020-01-02 | 주식회사 무한 | 기판 처리 장치 |
| JP6199619B2 (ja) | 2013-06-13 | 2017-09-20 | 株式会社ニューフレアテクノロジー | 気相成長装置 |
| JP6492736B2 (ja) | 2015-02-17 | 2019-04-03 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法並びに記憶媒体 |
| JP2018113322A (ja) * | 2017-01-11 | 2018-07-19 | 株式会社日立国際電気 | 半導体装置の製造方法、プログラムおよび基板処理装置 |
| CN107093577A (zh) * | 2017-04-17 | 2017-08-25 | 上海华虹宏力半导体制造有限公司 | 接触孔的制造方法 |
| US11075105B2 (en) * | 2017-09-21 | 2021-07-27 | Applied Materials, Inc. | In-situ apparatus for semiconductor process module |
| JP6777614B2 (ja) * | 2017-09-26 | 2020-10-28 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体装置の製造方法、基板処理装置、およびプログラム |
| KR102849177B1 (ko) * | 2020-05-08 | 2025-08-25 | 도쿄엘렉트론가부시키가이샤 | 성막 방법 및 성막 장치 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0629236A (ja) * | 1992-07-07 | 1994-02-04 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
| TW554382B (en) * | 1998-06-09 | 2003-09-21 | Tokyo Electron Ltd | Method of forming TiSiN film, diffusion preventing film and semiconductor device constituted by TiSiN film and method of producing the same, and TiSiN film forming device |
| JP4545433B2 (ja) * | 2003-12-26 | 2010-09-15 | 東京エレクトロン株式会社 | 成膜方法 |
| KR100735938B1 (ko) * | 2004-04-09 | 2007-07-06 | 동경 엘렉트론 주식회사 | Ｔｉ막 및 ＴｉＮ막의 성막 방법, 접촉 구조체 및 컴퓨터 판독 가능한 기억 매체 |
| JPWO2008007675A1 (ja) * | 2006-07-11 | 2009-12-10 | 東京エレクトロン株式会社 | 成膜方法、クリーニング方法、および成膜装置 |
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2010
- 2010-09-29 JP JP2010219947A patent/JP5476269B2/ja not_active Expired - Fee Related
-
2011
- 2011-09-28 KR KR1020110098074A patent/KR101290957B1/ko active Active
- 2011-09-28 TW TW100134922A patent/TWI557263B/zh active
- 2011-09-29 CN CN201110303097.XA patent/CN102433546B/zh active Active