CN102433546B - 成膜方法和成膜装置 - Google Patents
成膜方法和成膜装置 Download PDFInfo
- Publication number
- CN102433546B CN102433546B CN201110303097.XA CN201110303097A CN102433546B CN 102433546 B CN102433546 B CN 102433546B CN 201110303097 A CN201110303097 A CN 201110303097A CN 102433546 B CN102433546 B CN 102433546B
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- China
- Prior art keywords
- gas
- film
- mentioned
- flow
- film forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000000034 method Methods 0.000 title claims abstract description 73
- 230000015572 biosynthetic process Effects 0.000 title description 13
- 238000006243 chemical reaction Methods 0.000 claims abstract description 126
- 239000010936 titanium Substances 0.000 claims abstract description 106
- 239000000758 substrate Substances 0.000 claims abstract description 77
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 23
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 20
- 230000008569 process Effects 0.000 claims description 62
- 238000012545 processing Methods 0.000 abstract description 5
- 230000005611 electricity Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 233
- 229920006254 polymer film Polymers 0.000 description 44
- 238000005755 formation reaction Methods 0.000 description 35
- 238000005530 etching Methods 0.000 description 24
- 238000002474 experimental method Methods 0.000 description 22
- 238000000151 deposition Methods 0.000 description 20
- 230000008021 deposition Effects 0.000 description 20
- 229910004298 SiO 2 Inorganic materials 0.000 description 18
- 239000010410 layer Substances 0.000 description 16
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 12
- 230000033228 biological regulation Effects 0.000 description 10
- 230000004907 flux Effects 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 8
- 230000004044 response Effects 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 7
- 238000011156 evaluation Methods 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- 229910008486 TiSix Inorganic materials 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 5
- 150000003254 radicals Chemical class 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 230000001276 controlling effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000006722 reduction reaction Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000006837 decompression Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000007348 radical reaction Methods 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010-219947 | 2010-09-29 | ||
| JP2010219947A JP5476269B2 (ja) | 2010-09-29 | 2010-09-29 | 成膜方法及び成膜装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102433546A CN102433546A (zh) | 2012-05-02 |
| CN102433546B true CN102433546B (zh) | 2015-01-07 |
Family
ID=45981890
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110303097.XA Active CN102433546B (zh) | 2010-09-29 | 2011-09-29 | 成膜方法和成膜装置 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5476269B2 (enrdf_load_stackoverflow) |
| KR (1) | KR101290957B1 (enrdf_load_stackoverflow) |
| CN (1) | CN102433546B (enrdf_load_stackoverflow) |
| TW (1) | TWI557263B (enrdf_load_stackoverflow) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102061749B1 (ko) * | 2012-12-27 | 2020-01-02 | 주식회사 무한 | 기판 처리 장치 |
| JP6199619B2 (ja) | 2013-06-13 | 2017-09-20 | 株式会社ニューフレアテクノロジー | 気相成長装置 |
| JP6492736B2 (ja) | 2015-02-17 | 2019-04-03 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法並びに記憶媒体 |
| JP2018113322A (ja) * | 2017-01-11 | 2018-07-19 | 株式会社日立国際電気 | 半導体装置の製造方法、プログラムおよび基板処理装置 |
| CN107093577A (zh) * | 2017-04-17 | 2017-08-25 | 上海华虹宏力半导体制造有限公司 | 接触孔的制造方法 |
| US11075105B2 (en) * | 2017-09-21 | 2021-07-27 | Applied Materials, Inc. | In-situ apparatus for semiconductor process module |
| JP6777614B2 (ja) * | 2017-09-26 | 2020-10-28 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体装置の製造方法、基板処理装置、およびプログラム |
| KR102849177B1 (ko) * | 2020-05-08 | 2025-08-25 | 도쿄엘렉트론가부시키가이샤 | 성막 방법 및 성막 장치 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1898410A (zh) * | 2003-12-26 | 2007-01-17 | 东京毅力科创株式会社 | 氮化钛膜的成膜 |
| CN101490307A (zh) * | 2006-07-11 | 2009-07-22 | 东京毅力科创株式会社 | 成膜方法、清洁方法和成膜装置 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0629236A (ja) * | 1992-07-07 | 1994-02-04 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
| TW554382B (en) * | 1998-06-09 | 2003-09-21 | Tokyo Electron Ltd | Method of forming TiSiN film, diffusion preventing film and semiconductor device constituted by TiSiN film and method of producing the same, and TiSiN film forming device |
| KR100735938B1 (ko) * | 2004-04-09 | 2007-07-06 | 동경 엘렉트론 주식회사 | Ｔｉ막 및 ＴｉＮ막의 성막 방법, 접촉 구조체 및 컴퓨터 판독 가능한 기억 매체 |
-
2010
- 2010-09-29 JP JP2010219947A patent/JP5476269B2/ja not_active Expired - Fee Related
-
2011
- 2011-09-28 KR KR1020110098074A patent/KR101290957B1/ko active Active
- 2011-09-28 TW TW100134922A patent/TWI557263B/zh active
- 2011-09-29 CN CN201110303097.XA patent/CN102433546B/zh active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1898410A (zh) * | 2003-12-26 | 2007-01-17 | 东京毅力科创株式会社 | 氮化钛膜的成膜 |
| CN101490307A (zh) * | 2006-07-11 | 2009-07-22 | 东京毅力科创株式会社 | 成膜方法、清洁方法和成膜装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20120033264A (ko) | 2012-04-06 |
| JP2012072475A (ja) | 2012-04-12 |
| KR101290957B1 (ko) | 2013-07-30 |
| CN102433546A (zh) | 2012-05-02 |
| JP5476269B2 (ja) | 2014-04-23 |
| TW201229294A (en) | 2012-07-16 |
| TWI557263B (zh) | 2016-11-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |