JP2012038885A - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
- Publication number
- JP2012038885A JP2012038885A JP2010177105A JP2010177105A JP2012038885A JP 2012038885 A JP2012038885 A JP 2012038885A JP 2010177105 A JP2010177105 A JP 2010177105A JP 2010177105 A JP2010177105 A JP 2010177105A JP 2012038885 A JP2012038885 A JP 2012038885A
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- layer
- semiconductor
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 115
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000000758 substrate Substances 0.000 claims abstract description 72
- 150000004767 nitrides Chemical class 0.000 claims abstract description 27
- 230000000116 mitigating effect Effects 0.000 claims description 8
- 230000000149 penetrating effect Effects 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 abstract description 4
- 238000006731 degradation reaction Methods 0.000 abstract 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 7
- 239000010931 gold Substances 0.000 description 7
- 229910002601 GaN Inorganic materials 0.000 description 5
- 230000005669 field effect Effects 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 230000005533 two-dimensional electron gas Effects 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 206010037660 Pyrexia Diseases 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/4175—Source or drain electrodes for field effect devices for lateral devices where the connection to the source or drain region is done through at least one part of the semiconductor substrate thickness, e.g. with connecting sink or with via-hole
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66431—Unipolar field-effect transistors with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys
- H01L29/165—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010177105A JP2012038885A (ja) | 2010-08-06 | 2010-08-06 | 半導体装置及びその製造方法 |
| PCT/JP2011/003131 WO2012017588A1 (ja) | 2010-08-06 | 2011-06-02 | 半導体装置及びその製造方法 |
| CN2011800385723A CN103053015A (zh) | 2010-08-06 | 2011-06-02 | 半导体装置及其制造方法 |
| US13/759,100 US20130146946A1 (en) | 2010-08-06 | 2013-02-05 | Semiconductor device and method for fabricating same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010177105A JP2012038885A (ja) | 2010-08-06 | 2010-08-06 | 半導体装置及びその製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2012038885A true JP2012038885A (ja) | 2012-02-23 |
Family
ID=45559114
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010177105A Pending JP2012038885A (ja) | 2010-08-06 | 2010-08-06 | 半導体装置及びその製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20130146946A1 (zh) |
| JP (1) | JP2012038885A (zh) |
| CN (1) | CN103053015A (zh) |
| WO (1) | WO2012017588A1 (zh) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015122493A (ja) * | 2013-12-20 | 2015-07-02 | フリースケール セミコンダクター インコーポレイテッド | インナービアを有する半導体デバイス |
| US9136396B2 (en) | 2012-12-12 | 2015-09-15 | Electronics And Telecommunications Research Institute | Semiconductor device and method of manufacturing the same |
| US9136347B2 (en) | 2013-12-30 | 2015-09-15 | Electronics And Telecommunications Research Institute | Nitride semiconductor device |
| WO2015182283A1 (ja) * | 2014-05-26 | 2015-12-03 | シャープ株式会社 | 窒化物系化合物半導体 |
| JP2016063167A (ja) * | 2014-09-19 | 2016-04-25 | 株式会社東芝 | 半導体装置 |
| JP2016086167A (ja) * | 2014-10-24 | 2016-05-19 | 蘇州能訊高能半導体有限公司Ｄｙｎａｘ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ，Ｉｎｃ． | 半導体デバイス |
| JP2017174937A (ja) * | 2016-03-23 | 2017-09-28 | 株式会社東芝 | 半導体装置 |
| JP2017188685A (ja) * | 2016-04-05 | 2017-10-12 | 蘇州捷芯威半導体有限公司Ｇｐｏｗｅｒ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ，Ｉｎｃ． | 半導体デバイス |
| JP2017228621A (ja) * | 2016-06-21 | 2017-12-28 | 富士通株式会社 | 半導体装置及び半導体装置の製造方法 |
| JP2018064108A (ja) * | 2017-12-07 | 2018-04-19 | 株式会社東芝 | 半導体装置 |
| US11081432B2 (en) | 2019-01-18 | 2021-08-03 | Rohm Co., Ltd. | Semiconductor device with semiconductor element and electrodes on different surfaces |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6245559B2 (ja) * | 2012-10-11 | 2017-12-13 | ローム株式会社 | 窒化物半導体装置およびその製造方法 |
| US9368584B2 (en) * | 2013-07-09 | 2016-06-14 | Vishay General Semiconductor Llc | Gallium nitride power semiconductor device having a vertical structure |
| TWI577022B (zh) * | 2014-02-27 | 2017-04-01 | 台達電子工業股份有限公司 | 半導體裝置與應用其之半導體裝置封裝體 |
| US10665709B2 (en) | 2013-09-10 | 2020-05-26 | Delta Electronics, Inc. | Power semiconductor device integrated with ESD protection circuit under source pad, drain pad, and/or gate pad |
| US10236236B2 (en) * | 2013-09-10 | 2019-03-19 | Delta Electronics, Inc. | Heterojunction semiconductor device for reducing parasitic capacitance |
| US10910491B2 (en) * | 2013-09-10 | 2021-02-02 | Delta Electronics, Inc. | Semiconductor device having reduced capacitance between source and drain pads |
| US10833185B2 (en) | 2013-09-10 | 2020-11-10 | Delta Electronics, Inc. | Heterojunction semiconductor device having source and drain pads with improved current crowding |
| CN104882478B (zh) * | 2014-02-27 | 2018-02-09 | 台达电子工业股份有限公司 | 半导体装置与应用其的半导体装置封装体 |
| DE102016200825A1 (de) * | 2016-01-21 | 2017-07-27 | Robert Bosch Gmbh | Vorrichtung und Verfahren zur Herstellung eines lateralen HEMTs |
| US10249725B2 (en) * | 2016-08-15 | 2019-04-02 | Delta Electronics, Inc. | Transistor with a gate metal layer having varying width |
| DE102017103111A1 (de) * | 2017-02-16 | 2018-08-16 | Semikron Elektronik Gmbh & Co. Kg | Halbleiterdiode und elektronische Schaltungsanordnung hiermit |
| JP7248410B2 (ja) * | 2018-11-01 | 2023-03-29 | エア・ウォーター株式会社 | 化合物半導体装置、化合物半導体基板、および化合物半導体装置の製造方法 |
| CN111490099B (zh) * | 2019-01-25 | 2022-09-27 | 苏州能讯高能半导体有限公司 | 半导体器件和半导体器件制造方法 |
| WO2022061181A1 (en) * | 2020-09-21 | 2022-03-24 | Transphorm Technology, Inc. | Iii-nitride devices with through-via structures |
| KR20230061224A (ko) * | 2021-10-28 | 2023-05-08 | (주)웨이비스 | 트랜지스터 및 이의 제조 방법 |
| FR3142604A1 (fr) | 2022-11-30 | 2024-05-31 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Dispositif microélectronique à tenue en tension verticale améliorée |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0439968A (ja) * | 1990-06-05 | 1992-02-10 | Mitsubishi Electric Corp | 半導体装置 |
| JPH05102153A (ja) * | 1991-06-18 | 1993-04-23 | Miyazaki Oki Electric Co Ltd | 半導体素子の配線形成方法 |
| JP2000294568A (ja) * | 1999-04-08 | 2000-10-20 | Mitsubishi Electric Corp | ミリ波帯半導体スイッチ回路 |
| JP2004363563A (ja) * | 2003-05-15 | 2004-12-24 | Matsushita Electric Ind Co Ltd | 半導体装置 |
| JP2006216671A (ja) * | 2005-02-02 | 2006-08-17 | Toshiba Corp | 窒素化合物半導体素子 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7078743B2 (en) * | 2003-05-15 | 2006-07-18 | Matsushita Electric Industrial Co., Ltd. | Field effect transistor semiconductor device |
-
2010
- 2010-08-06 JP JP2010177105A patent/JP2012038885A/ja active Pending
-
2011
- 2011-06-02 CN CN2011800385723A patent/CN103053015A/zh active Pending
- 2011-06-02 WO PCT/JP2011/003131 patent/WO2012017588A1/ja active Application Filing
-
2013
- 2013-02-05 US US13/759,100 patent/US20130146946A1/en not_active Abandoned
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0439968A (ja) * | 1990-06-05 | 1992-02-10 | Mitsubishi Electric Corp | 半導体装置 |
| JPH05102153A (ja) * | 1991-06-18 | 1993-04-23 | Miyazaki Oki Electric Co Ltd | 半導体素子の配線形成方法 |
| JP2000294568A (ja) * | 1999-04-08 | 2000-10-20 | Mitsubishi Electric Corp | ミリ波帯半導体スイッチ回路 |
| JP2004363563A (ja) * | 2003-05-15 | 2004-12-24 | Matsushita Electric Ind Co Ltd | 半導体装置 |
| JP2006216671A (ja) * | 2005-02-02 | 2006-08-17 | Toshiba Corp | 窒素化合物半導体素子 |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9136396B2 (en) | 2012-12-12 | 2015-09-15 | Electronics And Telecommunications Research Institute | Semiconductor device and method of manufacturing the same |
| JP2015122493A (ja) * | 2013-12-20 | 2015-07-02 | フリースケール セミコンダクター インコーポレイテッド | インナービアを有する半導体デバイス |
| US9136347B2 (en) | 2013-12-30 | 2015-09-15 | Electronics And Telecommunications Research Institute | Nitride semiconductor device |
| JPWO2015182283A1 (ja) * | 2014-05-26 | 2017-04-20 | シャープ株式会社 | 窒化物系化合物半導体 |
| WO2015182283A1 (ja) * | 2014-05-26 | 2015-12-03 | シャープ株式会社 | 窒化物系化合物半導体 |
| US9773864B2 (en) | 2014-05-26 | 2017-09-26 | Sharp Kabushiki Kaisha | Nitride compound semiconductor |
| JP2016063167A (ja) * | 2014-09-19 | 2016-04-25 | 株式会社東芝 | 半導体装置 |
| JP2016086167A (ja) * | 2014-10-24 | 2016-05-19 | 蘇州能訊高能半導体有限公司Ｄｙｎａｘ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ，Ｉｎｃ． | 半導体デバイス |
| JP2017174937A (ja) * | 2016-03-23 | 2017-09-28 | 株式会社東芝 | 半導体装置 |
| JP2017188685A (ja) * | 2016-04-05 | 2017-10-12 | 蘇州捷芯威半導体有限公司Ｇｐｏｗｅｒ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ，Ｉｎｃ． | 半導体デバイス |
| JP2017228621A (ja) * | 2016-06-21 | 2017-12-28 | 富士通株式会社 | 半導体装置及び半導体装置の製造方法 |
| JP2018064108A (ja) * | 2017-12-07 | 2018-04-19 | 株式会社東芝 | 半導体装置 |
| US11081432B2 (en) | 2019-01-18 | 2021-08-03 | Rohm Co., Ltd. | Semiconductor device with semiconductor element and electrodes on different surfaces |
| US11646251B2 (en) | 2019-01-18 | 2023-05-09 | Rohm Co., Ltd. | Semiconductor device |
| US11955411B2 (en) | 2019-01-18 | 2024-04-09 | Rohm Co., Ltd. | Semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103053015A (zh) | 2013-04-17 |
| US20130146946A1 (en) | 2013-06-13 |
| WO2012017588A1 (ja) | 2012-02-09 |
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