JP2012033615A5 - - Google Patents

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Publication number
JP2012033615A5
JP2012033615A5 JP2010170570A JP2010170570A JP2012033615A5 JP 2012033615 A5 JP2012033615 A5 JP 2012033615A5 JP 2010170570 A JP2010170570 A JP 2010170570A JP 2010170570 A JP2010170570 A JP 2010170570A JP 2012033615 A5 JP2012033615 A5 JP 2012033615A5
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JP
Japan
Prior art keywords
wafer
manufactured
holes
semiconductor device
diced along
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2010170570A
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English (en)
Japanese (ja)
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JP2012033615A (ja
JP5521862B2 (ja
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Publication date
Application filed filed Critical
Priority claimed from JP2010170570A external-priority patent/JP5521862B2/ja
Priority to JP2010170570A priority Critical patent/JP5521862B2/ja
Priority to US13/079,055 priority patent/US8728866B2/en
Priority to TW100111754A priority patent/TWI446429B/zh
Priority to DE102011079105A priority patent/DE102011079105A1/de
Priority to DE102011122918.7A priority patent/DE102011122918B3/de
Priority to CN201110213254.8A priority patent/CN102347243B/zh
Publication of JP2012033615A publication Critical patent/JP2012033615A/ja
Publication of JP2012033615A5 publication Critical patent/JP2012033615A5/ja
Publication of JP5521862B2 publication Critical patent/JP5521862B2/ja
Application granted granted Critical
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2010170570A 2010-07-29 2010-07-29 半導体装置の製造方法 Expired - Fee Related JP5521862B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2010170570A JP5521862B2 (ja) 2010-07-29 2010-07-29 半導体装置の製造方法
US13/079,055 US8728866B2 (en) 2010-07-29 2011-04-04 Method for manufacturing semiconductor device
TW100111754A TWI446429B (zh) 2010-07-29 2011-04-06 半導體裝置及其製造方法
DE102011122918.7A DE102011122918B3 (de) 2010-07-29 2011-07-13 Halbleitervorrichtung
DE102011079105A DE102011079105A1 (de) 2010-07-29 2011-07-13 Halbleitervorrichtung und Verfahren zum Herstellen derselben
CN201110213254.8A CN102347243B (zh) 2010-07-29 2011-07-28 半导体装置及其制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010170570A JP5521862B2 (ja) 2010-07-29 2010-07-29 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2012033615A JP2012033615A (ja) 2012-02-16
JP2012033615A5 true JP2012033615A5 (US20040106767A1-20040603-C00005.png) 2013-07-04
JP5521862B2 JP5521862B2 (ja) 2014-06-18

Family

ID=45525895

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010170570A Expired - Fee Related JP5521862B2 (ja) 2010-07-29 2010-07-29 半導体装置の製造方法

Country Status (5)

Country Link
US (1) US8728866B2 (US20040106767A1-20040603-C00005.png)
JP (1) JP5521862B2 (US20040106767A1-20040603-C00005.png)
CN (1) CN102347243B (US20040106767A1-20040603-C00005.png)
DE (2) DE102011079105A1 (US20040106767A1-20040603-C00005.png)
TW (1) TWI446429B (US20040106767A1-20040603-C00005.png)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105428255B (zh) * 2013-03-29 2019-02-15 日月光半导体制造股份有限公司 透光壳体及其制造方法与应用其的光学组件
JP2015115446A (ja) 2013-12-11 2015-06-22 株式会社東芝 半導体装置の製造方法
JP6221736B2 (ja) * 2013-12-25 2017-11-01 三菱電機株式会社 半導体装置
JP6215755B2 (ja) 2014-04-14 2017-10-18 ルネサスエレクトロニクス株式会社 半導体装置
TWI566288B (zh) * 2014-07-14 2017-01-11 矽品精密工業股份有限公司 切割用載具及切割方法
JP6314731B2 (ja) * 2014-08-01 2018-04-25 株式会社ソシオネクスト 半導体装置及び半導体装置の製造方法
US10277271B2 (en) 2015-07-28 2019-04-30 Nippon Telegraph And Telephone Corporation Optical module
KR102049724B1 (ko) 2015-08-18 2019-11-28 미쓰비시덴키 가부시키가이샤 반도체 장치
US10393532B2 (en) * 2015-10-20 2019-08-27 International Business Machines Corporation Emergency responsive navigation
KR102494902B1 (ko) * 2017-02-02 2023-02-01 쇼와덴코머티리얼즈가부시끼가이샤 전자 부품의 제조 방법, 가보호용 수지 조성물 및 가보호용 수지 필름
JP2019192729A (ja) * 2018-04-23 2019-10-31 株式会社村田製作所 半導体装置
DE112018007677B4 (de) * 2018-05-28 2023-10-12 Mitsubishi Electric Corporation Verfahren zur Herstellung eines Halbleitergerätes
JP7034105B2 (ja) 2019-01-18 2022-03-11 三菱電機株式会社 電力用半導体装置の製造方法、電力用半導体装置および電力変換装置
KR20210076292A (ko) 2019-12-13 2021-06-24 삼성전자주식회사 반도체 패키지
US11948893B2 (en) * 2021-12-21 2024-04-02 Qorvo Us, Inc. Electronic component with lid to manage radiation feedback

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EP0544329A3 (en) 1991-11-28 1993-09-01 Kabushiki Kaisha Toshiba Semiconductor package
JP2501279B2 (ja) 1991-11-29 1996-05-29 株式会社東芝 半導体パッケ―ジ
JP2001024079A (ja) 1999-07-05 2001-01-26 Seiko Epson Corp 電子部品の封止構造
US7026223B2 (en) 2002-03-28 2006-04-11 M/A-Com, Inc Hermetic electric component package
JP4342174B2 (ja) 2002-12-27 2009-10-14 新光電気工業株式会社 電子デバイス及びその製造方法
JP2005057136A (ja) 2003-08-06 2005-03-03 Matsushita Electric Ind Co Ltd 半導体装置
JP4312631B2 (ja) 2004-03-03 2009-08-12 三菱電機株式会社 ウエハレベルパッケージ構造体とその製造方法、及びそのウエハレベルパッケージ構造体から分割された素子
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KR100594716B1 (ko) 2004-07-27 2006-06-30 삼성전자주식회사 공동부를 구비한 캡 웨이퍼, 이를 이용한 반도체 칩, 및그 제조방법
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JP4860552B2 (ja) 2007-06-08 2012-01-25 日本オプネクスト株式会社 半導体装置
JP5344336B2 (ja) * 2008-02-27 2013-11-20 株式会社ザイキューブ 半導体装置

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