JP2012031513A5 - - Google Patents
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- Publication number
- JP2012031513A5 JP2012031513A5 JP2011142771A JP2011142771A JP2012031513A5 JP 2012031513 A5 JP2012031513 A5 JP 2012031513A5 JP 2011142771 A JP2011142771 A JP 2011142771A JP 2011142771 A JP2011142771 A JP 2011142771A JP 2012031513 A5 JP2012031513 A5 JP 2012031513A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor region
- conductive film
- forming
- silicon
- heat treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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- 239000004065 semiconductor Substances 0.000 claims 12
- 238000010438 heat treatment Methods 0.000 claims 6
- 238000000034 method Methods 0.000 claims 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 4
- 229910052710 silicon Inorganic materials 0.000 claims 4
- 239000010703 silicon Substances 0.000 claims 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims 3
- 239000002994 raw material Substances 0.000 claims 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical group [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 239000011651 chromium Substances 0.000 claims 1
- 229910017052 cobalt Inorganic materials 0.000 claims 1
- 239000010941 cobalt Substances 0.000 claims 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 1
- 229910052735 hafnium Inorganic materials 0.000 claims 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052758 niobium Inorganic materials 0.000 claims 1
- 239000010955 niobium Substances 0.000 claims 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims 1
- 229910021332 silicide Inorganic materials 0.000 claims 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 1
- 150000003376 silicon Chemical class 0.000 claims 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 claims 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 claims 1
- 238000003860 storage Methods 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
- 229910052720 vanadium Inorganic materials 0.000 claims 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011142771A JP2012031513A (ja) | 2010-06-30 | 2011-06-28 | 半導体領域の形成方法及び蓄電装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010150098 | 2010-06-30 | ||
| JP2010150098 | 2010-06-30 | ||
| JP2011142771A JP2012031513A (ja) | 2010-06-30 | 2011-06-28 | 半導体領域の形成方法及び蓄電装置の作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015092460A Division JP5987084B2 (ja) | 2010-06-30 | 2015-04-29 | 半導体領域の形成方法及び蓄電装置の作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2012031513A JP2012031513A (ja) | 2012-02-16 |
| JP2012031513A5 true JP2012031513A5 (https=) | 2014-07-24 |
Family
ID=45400022
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011142771A Withdrawn JP2012031513A (ja) | 2010-06-30 | 2011-06-28 | 半導体領域の形成方法及び蓄電装置の作製方法 |
| JP2015092460A Expired - Fee Related JP5987084B2 (ja) | 2010-06-30 | 2015-04-29 | 半導体領域の形成方法及び蓄電装置の作製方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015092460A Expired - Fee Related JP5987084B2 (ja) | 2010-06-30 | 2015-04-29 | 半導体領域の形成方法及び蓄電装置の作製方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US8846530B2 (https=) |
| JP (2) | JP2012031513A (https=) |
| KR (1) | KR101833546B1 (https=) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011136028A1 (en) | 2010-04-28 | 2011-11-03 | Semiconductor Energy Laboratory Co., Ltd. | Power storage device and method for manufacturing the same |
| KR101838627B1 (ko) | 2010-05-28 | 2018-03-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 축전 장치 및 그 제작 방법 |
| WO2011152190A1 (en) | 2010-06-02 | 2011-12-08 | Semiconductor Energy Laboratory Co., Ltd. | Power storage device and method for manufacturing the same |
| WO2012002136A1 (en) | 2010-06-30 | 2012-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of power storage device |
| US9543577B2 (en) | 2010-12-16 | 2017-01-10 | Semiconductor Energy Laboratory Co., Ltd. | Active material, electrode including the active material and manufacturing method thereof, and secondary battery |
| JP6035054B2 (ja) | 2011-06-24 | 2016-11-30 | 株式会社半導体エネルギー研究所 | 蓄電装置の電極の作製方法 |
| KR20130006301A (ko) | 2011-07-08 | 2013-01-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 실리콘막의 제작 방법 및 축전 장치의 제작 방법 |
| US8814956B2 (en) | 2011-07-14 | 2014-08-26 | Semiconductor Energy Laboratory Co., Ltd. | Power storage device, electrode, and manufacturing method thereof |
| WO2013027561A1 (en) | 2011-08-19 | 2013-02-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing graphene-coated object, negative electrode of secondary battery including graphene-coated object, and secondary battery including the negative electrode |
| JP6025284B2 (ja) | 2011-08-19 | 2016-11-16 | 株式会社半導体エネルギー研究所 | 蓄電装置用の電極及び蓄電装置 |
| KR20130024769A (ko) | 2011-08-30 | 2013-03-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 축전 장치 |
| JP6000017B2 (ja) | 2011-08-31 | 2016-09-28 | 株式会社半導体エネルギー研究所 | 蓄電装置及びその作製方法 |
| JP6034621B2 (ja) | 2011-09-02 | 2016-11-30 | 株式会社半導体エネルギー研究所 | 蓄電装置の電極および蓄電装置 |
| JP6050106B2 (ja) | 2011-12-21 | 2016-12-21 | 株式会社半導体エネルギー研究所 | 非水二次電池用シリコン負極の製造方法 |
| KR102460298B1 (ko) | 2013-04-19 | 2022-10-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 이차 전지 및 그 제작 방법 |
| DE102016103447A1 (de) * | 2016-02-26 | 2017-08-31 | Epcos Ag | Filterbauelement und Verwendung eines Filterbauelements |
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| GB1198900A (en) | 1967-10-25 | 1970-07-15 | Hitachi Ltd | Planar Transistor and Method of Making the Same |
| US4155781A (en) | 1976-09-03 | 1979-05-22 | Siemens Aktiengesellschaft | Method of manufacturing solar cells, utilizing single-crystal whisker growth |
| US5338625A (en) | 1992-07-29 | 1994-08-16 | Martin Marietta Energy Systems, Inc. | Thin film battery and method for making same |
| JPH0888189A (ja) * | 1994-09-16 | 1996-04-02 | Sanyo Electric Co Ltd | 薄膜多結晶半導体及びその製造方法並びに光起電力装置及びその製造方法 |
| RU2099808C1 (ru) | 1996-04-01 | 1997-12-20 | Евгений Инвиевич Гиваргизов | Способ выращивания ориентированных систем нитевидных кристаллов и устройство для его осуществления (варианты) |
| KR100520872B1 (ko) | 1999-10-22 | 2005-10-12 | 산요덴키가부시키가이샤 | 리튬 전지용 전극 및 리튬 2차전지 |
| KR20060083233A (ko) | 1999-10-22 | 2006-07-20 | 산요덴키가부시키가이샤 | 리튬 2차전지용 전극 및 리튬 2차전지 |
| EP1246278B1 (en) | 1999-10-22 | 2011-05-18 | Sanyo Electric Co., Ltd. | Electrode for lithium cell and lithium secondary cell |
| JP2002083594A (ja) | 1999-10-22 | 2002-03-22 | Sanyo Electric Co Ltd | リチウム電池用電極並びにこれを用いたリチウム電池及びリチウム二次電池 |
| AU7951100A (en) | 1999-10-22 | 2001-04-30 | Sanyo Electric Co., Ltd. | Electrode for lithium secondary cell and lithium secondary cell |
| AU7951400A (en) | 1999-10-22 | 2001-04-30 | Sanyo Electric Co., Ltd. | Method for producing electrode for lithium secondary cell |
| US6887511B1 (en) | 1999-10-22 | 2005-05-03 | Sanyo Electric Co., Ltd. | Method for preparing electrode material for lithium battery |
| JP2001210315A (ja) | 2000-01-25 | 2001-08-03 | Sanyo Electric Co Ltd | リチウム二次電池用電極及びこれを用いたリチウム二次電池 |
| JP2002141528A (ja) * | 2000-10-30 | 2002-05-17 | Kyocera Corp | 光電変換装置 |
| US6844113B2 (en) | 2001-04-13 | 2005-01-18 | Sanyo Electric Co., Ltd. | Electrode for lithium secondary battery and method for producing the same |
| JP2003246700A (ja) | 2002-02-22 | 2003-09-02 | Japan Science & Technology Corp | シリコンナノニードルの製法 |
| JP4140765B2 (ja) | 2002-09-19 | 2008-08-27 | コバレントマテリアル株式会社 | 針状シリコン結晶およびその製造方法 |
| US7015496B2 (en) | 2002-12-27 | 2006-03-21 | Semiconductor Energy Laboratory Co., Ltd. | Field emission device and manufacturing method thereof |
| JP2004281317A (ja) | 2003-03-18 | 2004-10-07 | Matsushita Electric Ind Co Ltd | 非水電解質二次電池用電極材料とその製造方法、ならびにそれを用いた非水電解質二次電池 |
| US20070292339A1 (en) * | 2004-03-23 | 2007-12-20 | Kanazawa R And D Ltd. | Iron Oxide Whisker of High Aspect Ratio, Titanium Oxide Whisker of High Aspect Ratio, Structure Containing These and Process for Producing Them |
| US9614214B2 (en) | 2004-12-16 | 2017-04-04 | Lg Chem, Ltd. | Method for improvement of performance of si thin film anode for lithium rechargeable battery |
| KR100677771B1 (ko) * | 2005-03-31 | 2007-02-02 | 주식회사 하이닉스반도체 | 무촉매층으로 성장시킨 나노튜브를 갖는 캐패시터 및 그의제조 방법 |
| US20090050204A1 (en) * | 2007-08-03 | 2009-02-26 | Illuminex Corporation. | Photovoltaic device using nanostructured material |
| EP1986253B1 (en) | 2006-02-14 | 2011-09-07 | Panasonic Corporation | Electrode for nonaqueous electrolyte secondary battery, method for producing same , and nonaqueous electrolyte secondary battery comprising such electrode for nonaqueous secondary battery |
| JP2008244306A (ja) * | 2007-03-28 | 2008-10-09 | Nec Electronics Corp | 半導体装置およびその製造方法 |
| KR100898293B1 (ko) | 2007-11-27 | 2009-05-18 | 삼성에스디아이 주식회사 | 리튬 이차 전지용 음극 활물질 및 이의 제조 방법 |
| US20090317726A1 (en) | 2008-04-08 | 2009-12-24 | Sony Corporation | Anode and secondary battery |
| US8927156B2 (en) | 2009-02-19 | 2015-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Power storage device |
| JP2010262752A (ja) | 2009-04-30 | 2010-11-18 | Furukawa Electric Co Ltd:The | リチウムイオン二次電池用の負極、それを用いたリチウムイオン二次電池、リチウムイオン二次電池用の負極の製造方法 |
| US9061902B2 (en) | 2009-12-18 | 2015-06-23 | The Board Of Trustees Of The Leland Stanford Junior University | Crystalline-amorphous nanowires for battery electrodes |
| WO2011136028A1 (en) | 2010-04-28 | 2011-11-03 | Semiconductor Energy Laboratory Co., Ltd. | Power storage device and method for manufacturing the same |
| US20110294005A1 (en) | 2010-05-28 | 2011-12-01 | Semiconductor Energy Laboratory Co., Ltd. | Power storage device, electrode, and electric device |
| CN102906913B (zh) | 2010-06-01 | 2016-08-03 | 株式会社半导体能源研究所 | 蓄能装置及其制造方法 |
| WO2011152190A1 (en) | 2010-06-02 | 2011-12-08 | Semiconductor Energy Laboratory Co., Ltd. | Power storage device and method for manufacturing the same |
| US20120003383A1 (en) | 2010-06-30 | 2012-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of energy storage device |
| JP6035054B2 (ja) | 2011-06-24 | 2016-11-30 | 株式会社半導体エネルギー研究所 | 蓄電装置の電極の作製方法 |
-
2011
- 2011-06-13 US US13/158,629 patent/US8846530B2/en not_active Expired - Fee Related
- 2011-06-28 JP JP2011142771A patent/JP2012031513A/ja not_active Withdrawn
- 2011-06-29 KR KR1020110063699A patent/KR101833546B1/ko not_active Expired - Fee Related
-
2015
- 2015-04-29 JP JP2015092460A patent/JP5987084B2/ja not_active Expired - Fee Related
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