JP2012023380A - パターンの製造方法 - Google Patents
パターンの製造方法 Download PDFInfo
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- JP2012023380A JP2012023380A JP2011156147A JP2011156147A JP2012023380A JP 2012023380 A JP2012023380 A JP 2012023380A JP 2011156147 A JP2011156147 A JP 2011156147A JP 2011156147 A JP2011156147 A JP 2011156147A JP 2012023380 A JP2012023380 A JP 2012023380A
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- pattern
- metal organic
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0275—Photolithographic processes using lasers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/105—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by conversion of non-conductive material on or in the support into conductive material, e.g. by using an energy beam
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2014—Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame
- G03F7/2016—Contact mask being integral part of the photosensitive element and subject to destructive removal during post-exposure processing
- G03F7/2018—Masking pattern obtained by selective application of an ink or a toner, e.g. ink jet printing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
- H01L21/2683—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using X-ray lasers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
- H05K3/1283—After-treatment of the printed patterns, e.g. sintering or curing methods
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
- H05K1/097—Inks comprising nanoparticles and specially adapted for being sintered at low temperature
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
- H05K2201/0203—Fillers and particles
- H05K2201/0242—Shape of an individual particle
- H05K2201/0257—Nanoparticles
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/01—Tools for processing; Objects used during processing
- H05K2203/0104—Tools for processing; Objects used during processing for patterning or coating
- H05K2203/013—Inkjet printing, e.g. for printing insulating material or resist
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
- H05K2203/107—Using laser light
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/12—Using specific substances
- H05K2203/121—Metallo-organic compounds
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Dispersion Chemistry (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- Nanotechnology (AREA)
- Toxicology (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Weting (AREA)
- Manufacturing Of Electric Cables (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Abstract
【解決手段】パターンの製造方法は、基板上に金属有機インク層(20)を形成する第1の段階;前記金属有機インク層(20)を半固体状態に硬化させる第2の段階;前記半固体状態の金属有機インク層(20)にレーザー光を照射し、照射された部分が固体状態に硬化されてパターンが形成される第3の段階、および、前記半固体状態の金属有機インク層(20)を除去して、前記パターンだけを残す第4の段階を含む。
【選択図】図8
Description
20:インク層
21:パターン
23:固体金属粒子
30:洗浄液
Claims (5)
- 基板上に金属有機インク層(20)を形成する第1の段階、
前記金属有機インク層(20)を半固体状態に硬化させる第2の段階、
前記半固体状態の金属有機インク層(20)にレーザー光を照射し、照射された部分が固体状態に硬化されてパターンが形成される第3の段階、および
前記半固体状態の金属有機インク層(20)を除去して、前記パターンだけを残す第4の段階
を含むパターンの製造方法。 - 前記第2の段階において、加熱用ランプを用いて、前記金属有機インク層(20)が形成された基板を加熱して前記金属有機インク層(20)を半固体状態に硬化させる、請求項1に記載のパターンの製造方法。
- 前記第2の段階において、ホットプレートまたは対流オーブンを用いて、前記金属有機インク層(20)が形成された基板を加熱して前記金属有機インク層(20)を半固体状態に硬化させる、請求項1に記載のパターンの製造方法。
- 前記第4の段階において、前記基板を洗浄液に浸すか、超音波洗浄をするか、又は、洗浄液を噴射することで、前記半固体状態の金属有機インク層(20)を除去する段階をさらに含む、請求項1に記載のパターンの製造方法。
- 前記第4の段階において、前記パターンが形成された基板を加熱する段階をさらに含む、請求項4に記載のパターンの製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2010-0068120 | 2010-07-14 | ||
KR1020100068120A KR101114256B1 (ko) | 2010-07-14 | 2010-07-14 | 패턴 제조 방법 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014129895A Division JP2014170973A (ja) | 2010-07-14 | 2014-06-25 | パターンの製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2012023380A true JP2012023380A (ja) | 2012-02-02 |
Family
ID=44786598
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011156147A Pending JP2012023380A (ja) | 2010-07-14 | 2011-07-14 | パターンの製造方法 |
JP2014129895A Pending JP2014170973A (ja) | 2010-07-14 | 2014-06-25 | パターンの製造方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014129895A Pending JP2014170973A (ja) | 2010-07-14 | 2014-06-25 | パターンの製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20120015112A1 (ja) |
EP (1) | EP2408283A1 (ja) |
JP (2) | JP2012023380A (ja) |
KR (1) | KR101114256B1 (ja) |
CN (1) | CN102338983B (ja) |
Cited By (9)
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JP2016516211A (ja) * | 2013-02-18 | 2016-06-02 | オルボテック リミテッド | ツーステップの直接描画レーザ・メタライゼーション |
KR20160144985A (ko) * | 2014-04-10 | 2016-12-19 | 오르보테크 엘티디. | 펄스-모드 직접-기록 레이저 금속화 |
JPWO2016075793A1 (ja) * | 2014-11-13 | 2017-04-27 | エス・オー・シー株式会社 | チップヒューズの製造方法及びチップヒューズ |
KR101813531B1 (ko) * | 2016-07-04 | 2018-01-02 | 주식회사 비에스피 | 투명전극과 이것의 제조방법 |
JP2018085437A (ja) * | 2016-11-24 | 2018-05-31 | 株式会社村田製作所 | 電子部品の製造方法及び電子部品 |
JP2019537269A (ja) * | 2016-11-26 | 2019-12-19 | 日本テキサス・インスツルメンツ合同会社 | 相互接続領域の上の集積回路ナノ粒子熱配路構造 |
US10537027B2 (en) | 2013-08-02 | 2020-01-14 | Orbotech Ltd. | Method producing a conductive path on a substrate |
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-
2011
- 2011-07-06 EP EP11172936A patent/EP2408283A1/en not_active Withdrawn
- 2011-07-12 US US13/180,921 patent/US20120015112A1/en not_active Abandoned
- 2011-07-14 CN CN201110196959.3A patent/CN102338983B/zh not_active Expired - Fee Related
- 2011-07-14 JP JP2011156147A patent/JP2012023380A/ja active Pending
-
2014
- 2014-06-25 JP JP2014129895A patent/JP2014170973A/ja active Pending
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JPH1020488A (ja) * | 1996-07-04 | 1998-01-23 | Mitsubishi Materials Corp | Pb非含有金属酸化物薄膜パターンの形成方法 |
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KR101114256B1 (ko) | 2012-03-05 |
KR20120007381A (ko) | 2012-01-20 |
EP2408283A1 (en) | 2012-01-18 |
CN102338983B (zh) | 2014-03-12 |
CN102338983A (zh) | 2012-02-01 |
JP2014170973A (ja) | 2014-09-18 |
US20120015112A1 (en) | 2012-01-19 |
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