JP2011519814A5 - - Google Patents
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- Publication number
- JP2011519814A5 JP2011519814A5 JP2011508486A JP2011508486A JP2011519814A5 JP 2011519814 A5 JP2011519814 A5 JP 2011519814A5 JP 2011508486 A JP2011508486 A JP 2011508486A JP 2011508486 A JP2011508486 A JP 2011508486A JP 2011519814 A5 JP2011519814 A5 JP 2011519814A5
- Authority
- JP
- Japan
- Prior art keywords
- diamond
- single crystal
- boron doped
- boron
- growth surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910003460 diamond Inorganic materials 0.000 claims 28
- 239000010432 diamond Substances 0.000 claims 28
- 239000013078 crystal Substances 0.000 claims 18
- 238000000034 method Methods 0.000 claims 16
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 14
- 229910052796 boron Inorganic materials 0.000 claims 14
- 238000005229 chemical vapour deposition Methods 0.000 claims 3
- 238000000151 deposition Methods 0.000 claims 3
- 230000008021 deposition Effects 0.000 claims 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 230000008018 melting Effects 0.000 claims 2
- 238000002844 melting Methods 0.000 claims 2
- 239000000203 mixture Substances 0.000 claims 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- 238000000137 annealing Methods 0.000 claims 1
- 229910002092 carbon dioxide Inorganic materials 0.000 claims 1
- 239000001569 carbon dioxide Substances 0.000 claims 1
- 229910002091 carbon monoxide Inorganic materials 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- WRECIMRULFAWHA-UHFFFAOYSA-N trimethyl borate Chemical compound COB(OC)OC WRECIMRULFAWHA-UHFFFAOYSA-N 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US7152408P | 2008-05-05 | 2008-05-05 | |
| US61/071,524 | 2008-05-05 | ||
| PCT/US2009/002753 WO2009137020A1 (en) | 2008-05-05 | 2009-05-05 | Ultratough single crystal boron-doped diamond |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011519814A JP2011519814A (ja) | 2011-07-14 |
| JP2011519814A5 true JP2011519814A5 (https=) | 2012-06-21 |
| JP5539968B2 JP5539968B2 (ja) | 2014-07-02 |
Family
ID=41264865
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011508486A Expired - Fee Related JP5539968B2 (ja) | 2008-05-05 | 2009-05-05 | 超靭性の単結晶ホウ素ドープダイヤモンド |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9023306B2 (https=) |
| EP (1) | EP2286459A4 (https=) |
| JP (1) | JP5539968B2 (https=) |
| CN (1) | CN102084492B (https=) |
| TW (1) | TWI457475B (https=) |
| WO (1) | WO2009137020A1 (https=) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU2009324921A1 (en) * | 2008-11-25 | 2010-06-17 | Carnegie Institution Of Washington | Production of single crystal CVD diamond rapid growth rate |
| US9023307B2 (en) | 2010-05-17 | 2015-05-05 | Carnegie Institution Of Washington | Production of large, high purity single crystal CVD diamond |
| GB201114379D0 (en) | 2011-08-22 | 2011-10-05 | Element Six Abrasives Sa | Temperature sensor |
| RU2484189C2 (ru) * | 2011-08-24 | 2013-06-10 | Игорь Владимирович Федосеев | Способ получения алмазов с полупроводниковыми свойствами |
| US20140341664A1 (en) * | 2012-01-10 | 2014-11-20 | Sumitomo Electric Hardmetal Corp. | Diamond coated tool |
| EP2868780B1 (en) | 2012-06-29 | 2020-11-04 | Sumitomo Electric Industries, Ltd. | Diamond single crystal and production method thereof, and single crystal diamond tool |
| JP6232817B2 (ja) * | 2013-08-05 | 2017-11-22 | 住友電気工業株式会社 | ナノ多結晶ダイヤモンドおよびこれを備える工具 |
| WO2016010028A1 (ja) * | 2014-07-15 | 2016-01-21 | 住友電気工業株式会社 | 単結晶ダイヤモンド、単結晶ダイヤモンドの製造方法及び単結晶ダイヤモンドを用いた工具 |
| WO2017070571A2 (en) | 2015-10-23 | 2017-04-27 | Landers James P | Devices, systems and methods for sample detection |
| CN107740184B (zh) * | 2017-09-30 | 2019-07-19 | 湖北碳六科技有限公司 | 一种梯度单晶金刚石及其制备方法 |
| CN108103571A (zh) * | 2018-01-11 | 2018-06-01 | 宁波晶钻工业科技有限公司 | 一种单晶金刚石制备装置以及方法 |
| WO2019215643A1 (en) * | 2018-05-08 | 2019-11-14 | M7D Corporation | Diamond materials comprising multiple cvd grown, small grain diamonds, in a single crystal diamond matrix |
| CN108545738B (zh) * | 2018-06-01 | 2020-07-10 | 北京科技大学 | 一种提高cvd单晶金刚石硬度及韧性的方法 |
| CN109574666B (zh) * | 2018-12-30 | 2021-06-15 | 南方科技大学 | 纳米结构含硼六方金刚石聚晶超硬复合材料及其制备方法和应用 |
| WO2021146594A1 (en) * | 2020-01-17 | 2021-07-22 | J2 Materials, Llc | Multi-doped diamond formation |
| US20230383436A1 (en) * | 2020-11-04 | 2023-11-30 | Sumitomo Electric Industries, Ltd. | Synthetic single crystal diamond and method for producing same |
| CN113046725B (zh) * | 2021-05-27 | 2021-11-16 | 武汉大学深圳研究院 | 一种氮化硼表层覆盖的nv色心金刚石、其制备方法和应用 |
| CN115261984A (zh) * | 2022-09-29 | 2022-11-01 | 北京芯美达科技有限公司 | 一种单晶金刚石晶格外延补偿方法 |
| CN115970690B (zh) * | 2022-12-15 | 2024-08-02 | 东南大学 | 一种晶体硼改性氧化铜催化剂及其制备方法和应用 |
| WO2024138229A1 (en) * | 2022-12-23 | 2024-06-27 | Great Lakes Crystal Technologies, Inc. | Variable-temperature vapor deposition process |
| CN116973027B (zh) * | 2023-07-04 | 2025-12-12 | 之江实验室 | 一种基于六方氮化硼中vb-色心的量子气压传感器及使用方法 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02260470A (ja) * | 1989-03-30 | 1990-10-23 | Sumitomo Electric Ind Ltd | 発光素子 |
| EP0543392A3 (en) | 1991-11-21 | 1993-10-20 | Canon Kk | Diamond semiconductor device and method of producing the same |
| GB9616043D0 (en) | 1996-07-31 | 1996-09-11 | De Beers Ind Diamond | Diamond |
| US6582513B1 (en) | 1998-05-15 | 2003-06-24 | Apollo Diamond, Inc. | System and method for producing synthetic diamond |
| US6322891B1 (en) | 2000-04-28 | 2001-11-27 | General Electric Company | Thermally-diffused boron diamond and its production |
| AU2001281404B2 (en) * | 2001-08-08 | 2008-07-03 | Apollo Diamond, Inc. | System and method for producing synthetic diamond |
| UA81614C2 (ru) * | 2001-11-07 | 2008-01-25 | Карнеги Инститьюшн Ов Вашингтон | Устройство для изготовления алмазов, узел удержания образца (варианты) и способ изготовления алмазов (варианты) |
| GB0130005D0 (en) | 2001-12-14 | 2002-02-06 | Diamanx Products Ltd | Boron doped diamond |
| US7115241B2 (en) * | 2003-07-14 | 2006-10-03 | Carnegie Institution Of Washington | Ultrahard diamonds and method of making thereof |
| JP4385764B2 (ja) * | 2003-12-26 | 2009-12-16 | 住友電気工業株式会社 | ダイヤモンド単結晶基板の製造方法 |
| AU2005335208B2 (en) * | 2004-09-10 | 2010-06-24 | Carnegie Institution Of Washington | Ultratough CVD single crystal diamond and three dimensional growth thereof |
| KR20080044206A (ko) * | 2005-05-25 | 2008-05-20 | 카네기 인스티튜션 오브 워싱턴 | 신속한 성장 속도의 무색 단결정 ｃｖｄ 다이아몬드 |
| WO2007029269A1 (en) * | 2005-09-05 | 2007-03-15 | Rajneesh Bhandari | Synthesis of large homoepitaxial monocrystalline diamond |
| US20090297429A1 (en) | 2006-01-04 | 2009-12-03 | Vohra Yogesh K | High growth rate methods of producing high-quality diamonds |
| WO2007092893A2 (en) * | 2006-02-07 | 2007-08-16 | Target Technology Company, Llc | Materials and methods for the manufacture of large crystal diamonds |
-
2009
- 2009-05-05 TW TW098114858A patent/TWI457475B/zh not_active IP Right Cessation
- 2009-05-05 US US12/435,565 patent/US9023306B2/en active Active
- 2009-05-05 CN CN200980125978.8A patent/CN102084492B/zh not_active Expired - Fee Related
- 2009-05-05 JP JP2011508486A patent/JP5539968B2/ja not_active Expired - Fee Related
- 2009-05-05 EP EP09743007.8A patent/EP2286459A4/en not_active Withdrawn
- 2009-05-05 WO PCT/US2009/002753 patent/WO2009137020A1/en not_active Ceased
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