JP2011519814A5 - - Google Patents
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- Publication number
- JP2011519814A5 JP2011519814A5 JP2011508486A JP2011508486A JP2011519814A5 JP 2011519814 A5 JP2011519814 A5 JP 2011519814A5 JP 2011508486 A JP2011508486 A JP 2011508486A JP 2011508486 A JP2011508486 A JP 2011508486A JP 2011519814 A5 JP2011519814 A5 JP 2011519814A5
- Authority
- JP
- Japan
- Prior art keywords
- diamond
- single crystal
- boron doped
- boron
- growth surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910003460 diamond Inorganic materials 0.000 claims 28
- 239000010432 diamond Substances 0.000 claims 28
- 239000013078 crystal Substances 0.000 claims 18
- 238000000034 method Methods 0.000 claims 16
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 14
- 229910052796 boron Inorganic materials 0.000 claims 14
- 238000005229 chemical vapour deposition Methods 0.000 claims 3
- 238000000151 deposition Methods 0.000 claims 3
- 230000008021 deposition Effects 0.000 claims 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 230000008018 melting Effects 0.000 claims 2
- 238000002844 melting Methods 0.000 claims 2
- 239000000203 mixture Substances 0.000 claims 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- 238000000137 annealing Methods 0.000 claims 1
- 229910002092 carbon dioxide Inorganic materials 0.000 claims 1
- 239000001569 carbon dioxide Substances 0.000 claims 1
- 229910002091 carbon monoxide Inorganic materials 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- WRECIMRULFAWHA-UHFFFAOYSA-N trimethyl borate Chemical compound COB(OC)OC WRECIMRULFAWHA-UHFFFAOYSA-N 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US7152408P | 2008-05-05 | 2008-05-05 | |
| US61/071,524 | 2008-05-05 | ||
| PCT/US2009/002753 WO2009137020A1 (en) | 2008-05-05 | 2009-05-05 | Ultratough single crystal boron-doped diamond |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011519814A JP2011519814A (ja) | 2011-07-14 |
| JP2011519814A5 true JP2011519814A5 (https=) | 2012-06-21 |
| JP5539968B2 JP5539968B2 (ja) | 2014-07-02 |
Family
ID=41264865
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011508486A Expired - Fee Related JP5539968B2 (ja) | 2008-05-05 | 2009-05-05 | 超靭性の単結晶ホウ素ドープダイヤモンド |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9023306B2 (https=) |
| EP (1) | EP2286459A4 (https=) |
| JP (1) | JP5539968B2 (https=) |
| CN (1) | CN102084492B (https=) |
| TW (1) | TWI457475B (https=) |
| WO (1) | WO2009137020A1 (https=) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010068419A2 (en) * | 2008-11-25 | 2010-06-17 | Carnegie Institution Of Washington | Production of single crystal cvd diamond rapid growth rate |
| JP2013532109A (ja) | 2010-05-17 | 2013-08-15 | カーネギー インスチチューション オブ ワシントン | 大形、高純度、単結晶のｃｖｄダイヤモンドの生成 |
| GB201114379D0 (en) * | 2011-08-22 | 2011-10-05 | Element Six Abrasives Sa | Temperature sensor |
| RU2484189C2 (ru) * | 2011-08-24 | 2013-06-10 | Игорь Владимирович Федосеев | Способ получения алмазов с полупроводниковыми свойствами |
| EP2772330A4 (en) * | 2012-01-10 | 2015-07-08 | Sumitomo Elec Hardmetal Corp | DIAMOND COATED TOOL |
| US9441312B2 (en) * | 2012-06-29 | 2016-09-13 | Sumitomo Electric Industries, Ltd. | Diamond single crystal, method for producing the same, and single crystal diamond tool |
| JP6232817B2 (ja) * | 2013-08-05 | 2017-11-22 | 住友電気工業株式会社 | ナノ多結晶ダイヤモンドおよびこれを備える工具 |
| US10316430B2 (en) * | 2014-07-15 | 2019-06-11 | Sumitomo Electric Industries, Ltd. | Single crystal diamond, method for manufacturing single crystal diamond, and tool containing single crystal diamond |
| US20190054468A1 (en) | 2015-10-23 | 2019-02-21 | University Of Virginia Patent Foundation | Devices, systems and methods for sample detection |
| CN107740184B (zh) * | 2017-09-30 | 2019-07-19 | 湖北碳六科技有限公司 | 一种梯度单晶金刚石及其制备方法 |
| CN108103571A (zh) * | 2018-01-11 | 2018-06-01 | 宁波晶钻工业科技有限公司 | 一种单晶金刚石制备装置以及方法 |
| CN112384648A (zh) * | 2018-05-08 | 2021-02-19 | M7D公司 | 在单晶金刚石基质中包括多个cvd生长的小晶粒金刚石的金刚石材料 |
| CN108545738B (zh) * | 2018-06-01 | 2020-07-10 | 北京科技大学 | 一种提高cvd单晶金刚石硬度及韧性的方法 |
| CN109574666B (zh) * | 2018-12-30 | 2021-06-15 | 南方科技大学 | 纳米结构含硼六方金刚石聚晶超硬复合材料及其制备方法和应用 |
| US12480224B2 (en) * | 2020-01-17 | 2025-11-25 | Advanced Diamond Holdings, Llc | Method for forming diamond having a desirable color by chemical vapor deposition comprising growing a doped diamond layer on a single crystal substrate |
| JP7754107B2 (ja) * | 2020-11-04 | 2025-10-15 | 住友電気工業株式会社 | 合成単結晶ダイヤモンド及びその製造方法 |
| CN113046725B (zh) * | 2021-05-27 | 2021-11-16 | 武汉大学深圳研究院 | 一种氮化硼表层覆盖的nv色心金刚石、其制备方法和应用 |
| CN115261984A (zh) * | 2022-09-29 | 2022-11-01 | 北京芯美达科技有限公司 | 一种单晶金刚石晶格外延补偿方法 |
| CN115970690B (zh) * | 2022-12-15 | 2024-08-02 | 东南大学 | 一种晶体硼改性氧化铜催化剂及其制备方法和应用 |
| US20240209498A1 (en) * | 2022-12-23 | 2024-06-27 | Great Lakes Crystal Technologies, Inc. | Variable-temperature vapor deposition process |
| CN116973027B (zh) * | 2023-07-04 | 2025-12-12 | 之江实验室 | 一种基于六方氮化硼中vb-色心的量子气压传感器及使用方法 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02260470A (ja) * | 1989-03-30 | 1990-10-23 | Sumitomo Electric Ind Ltd | 発光素子 |
| EP0543392A3 (en) * | 1991-11-21 | 1993-10-20 | Canon Kk | Diamond semiconductor device and method of producing the same |
| GB9616043D0 (en) | 1996-07-31 | 1996-09-11 | De Beers Ind Diamond | Diamond |
| US6582513B1 (en) | 1998-05-15 | 2003-06-24 | Apollo Diamond, Inc. | System and method for producing synthetic diamond |
| US6322891B1 (en) | 2000-04-28 | 2001-11-27 | General Electric Company | Thermally-diffused boron diamond and its production |
| AU2001281404B2 (en) * | 2001-08-08 | 2008-07-03 | Apollo Diamond, Inc. | System and method for producing synthetic diamond |
| UA81614C2 (ru) * | 2001-11-07 | 2008-01-25 | Карнеги Инститьюшн Ов Вашингтон | Устройство для изготовления алмазов, узел удержания образца (варианты) и способ изготовления алмазов (варианты) |
| GB0130005D0 (en) | 2001-12-14 | 2002-02-06 | Diamanx Products Ltd | Boron doped diamond |
| US20050025886A1 (en) | 2003-07-14 | 2005-02-03 | Carnegie Institution Of Washington | Annealing single crystal chemical vapor depositon diamonds |
| JP4385764B2 (ja) * | 2003-12-26 | 2009-12-16 | 住友電気工業株式会社 | ダイヤモンド単結晶基板の製造方法 |
| CA2589299C (en) * | 2004-09-10 | 2014-04-01 | Carnegie Institution Of Washington | Ultratough cvd single crystal diamond and three dimensional growth thereof |
| US7883684B2 (en) * | 2005-05-25 | 2011-02-08 | Carnegie Institution Of Washington | Colorless single-crystal CVD diamond at rapid growth rate |
| US7399358B2 (en) | 2005-09-05 | 2008-07-15 | Rajneesh Bhandari | Synthesis of large homoepitaxial monocrystalline diamond |
| WO2007081492A2 (en) * | 2006-01-04 | 2007-07-19 | Uab Research Foundation | High growth rate methods of producing high-quality diamonds |
| WO2007092893A2 (en) | 2006-02-07 | 2007-08-16 | Target Technology Company, Llc | Materials and methods for the manufacture of large crystal diamonds |
-
2009
- 2009-05-05 TW TW098114858A patent/TWI457475B/zh not_active IP Right Cessation
- 2009-05-05 US US12/435,565 patent/US9023306B2/en active Active
- 2009-05-05 EP EP09743007.8A patent/EP2286459A4/en not_active Withdrawn
- 2009-05-05 CN CN200980125978.8A patent/CN102084492B/zh not_active Expired - Fee Related
- 2009-05-05 JP JP2011508486A patent/JP5539968B2/ja not_active Expired - Fee Related
- 2009-05-05 WO PCT/US2009/002753 patent/WO2009137020A1/en not_active Ceased
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