JP2011519814A - 超靭性の単結晶ホウ素ドープダイヤモンド - Google Patents
超靭性の単結晶ホウ素ドープダイヤモンド Download PDFInfo
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- 239000010432 diamond Substances 0.000 title claims abstract description 207
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 189
- 239000013078 crystal Substances 0.000 title claims abstract description 69
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 title claims abstract description 68
- 229910052796 boron Inorganic materials 0.000 title claims abstract description 68
- 238000005229 chemical vapour deposition Methods 0.000 claims description 44
- 238000000034 method Methods 0.000 claims description 33
- 239000000463 material Substances 0.000 claims description 28
- 238000000137 annealing Methods 0.000 claims description 15
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 3
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims description 2
- 239000001569 carbon dioxide Substances 0.000 claims description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 claims 1
- 239000004327 boric acid Substances 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- -1 vaporized B 2 O 3 Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 44
- 229910052757 nitrogen Inorganic materials 0.000 description 24
- 230000008569 process Effects 0.000 description 12
- 238000007373 indentation Methods 0.000 description 11
- 239000010408 film Substances 0.000 description 10
- 239000007789 gas Substances 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- 238000005259 measurement Methods 0.000 description 7
- 238000010521 absorption reaction Methods 0.000 description 6
- 230000006872 improvement Effects 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 238000010348 incorporation Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- 238000002329 infrared spectrum Methods 0.000 description 4
- 238000000103 photoluminescence spectrum Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000005553 drilling Methods 0.000 description 3
- 239000010437 gem Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- 238000000259 microwave plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000012552 review Methods 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 238000005755 formation reaction Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000005459 micromachining Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 241000894007 species Species 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- WRECIMRULFAWHA-UHFFFAOYSA-N trimethyl borate Chemical compound COB(OC)OC WRECIMRULFAWHA-UHFFFAOYSA-N 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 description 1
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- 241001590997 Moolgarda engeli Species 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000007656 fracture toughness test Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002905 metal composite material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000013001 point bending Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/278—Diamond only doping or introduction of a secondary phase in the diamond
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/274—Diamond only using microwave discharges
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
- C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
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- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
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- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
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- C30B25/165—Controlling or regulating the flow of the reactive gases
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
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- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
政府関与の申立
i)種ダイヤモンドを、ダイヤモンドの成長表面全域での温度勾配を最小限に抑えるために、高い融点及び大きい熱伝導率を有する材料から作製されるヒートシンクホルダーに置く工程;
ii)ダイヤモンドの成長表面の温度を、成長中のダイヤモンド結晶の温度が約900℃〜1500℃の範囲にあるように制御する工程;及び
iii)単結晶ダイヤモンドを、5%〜20%のCH4/H2と、5%〜20%のO2/CH4と、0%〜20%のN2/CH4と、ホウ素供給源とを含む蒸着チャンバにおいてダイヤモンドの成長表面にマイクロ波プラズマ化学蒸着によって成長させる工程。
そのようなダイヤモンドについての成長速度は20μm/h〜100μm/hである。
1)反応でのホウ素ドーパントの量における変化;
2)窒素供給ガスにおける変化(Liangら、Appl. Phys. Lett.、2003);
3)オフ角度の変化、これもまた、ホウ素取り込みレベルを変化させることができる−ホウ素取り込みレベルがそれぞれの格子面について異なる:(111)>(110)>(100)=(113)(Burnsら、J. Cryst. Growth、1990、図27);すなわち、(110)方向からずれる角度は、(100)からずれる角度よりも大きいホウ素取り込みを有する;及び
4)ダイヤモンド成長期間中の基板温度における変化。
[B](cm−3)=1.1×1015I(2880cm−1)(cm−2) (3)
この式及び靭性対硬度のプロット(図1)に基づいて、超靭性のホウ素ドープダイヤモンドのホウ素濃度が0ppm〜100ppmの間で変化する。同様にまた、ホウ素の取り込みは、IRスペクトルにおける5000cm−1を超える水素の電子中心をほとんど導入しなかった(又は、IRスペクトルにおける5000cm−1を超える水素の電子中心を除きさえした)。ホウ素の取り込みによる色の改善がさらに、より大きい波数でのHに関連づけられるIRピークが最小になることによって確認される(Mengら、Proc. Natl. Acad. Sci. U.S.A.、2008)。言い換えれば、CVD単結晶ダイヤモンドの褐色の色をホウ素の添加によって調節することができる。
Hv=1.854P/a2、a=(a1+a2)/2 (1)
この場合、圧痕の隅から広がる半径方向の亀裂の平均長さが、破壊靭性を推定するために使用された(Yanら、Physica. Status Solidi.、2004;Miyataら、J. Mater. Res.、1993;Cheesmanら、Phys. Chem. Chem. Phys.、2005)。
KIC=0.016(E/Hv)0.5P/c1.5 (2)
この場合、Cは、くぼみ中心から測定される半径方向の亀裂の長さであり、c=(c1+c2)/4、Eはヤング率である(Liangら、Appl. Phys. Lett.、2003)。可塑的変形を防止するために、1kg〜3kgの間での負荷を使用した。圧痕結果の妥当性を評価するために、すべての圧子を顕微鏡で調べ、それぞれのダイヤモンド圧痕の前後で研磨金属表面に対して試験した。すべての試験を、同じビッカース圧子装置を使用して行った;天然Ia型、天然IIa型、合成Ib型、そしてまた、SC−CVDダイヤモンドに対する選択された以前の測定が示される(Yanら、Physica. Status Solidi.、2004)。硬度/靭性の値を他のタイプの測定の結果との比較のために定量化することは、詳細な分析を必要とする(Prelasら、Handbook of Industrial Diamonds and Diamond Films、Marcel Dekker、New York、USA、1998;Hemleyら、米国特許出願公開第2006065187号)が、データセットは、本研究で調べられたダイヤモンド物質について、硬度/靭性の定量可能な相対的尺度を提供する。
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Claims (17)
- 少なくとも約22MPa m1/2の靭性を有する、マイクロ波プラズマ化学蒸着によって成長した単結晶ホウ素ドープダイヤモンド。
- 靭性が約22MPa m1/2〜約35MPa m1/2の間である、請求項1に記載の単結晶ホウ素ドープダイヤモンド。
- 硬度が約60GPaを超える、請求項1に記載の単結晶ホウ素ドープダイヤモンド。
- 硬度が約60GPa〜約85GPaの間である、請求項1に記載の単結晶ホウ素ドープダイヤモンド。
- ダイヤモンドの色等級がダイヤモンド色等級スケールでDからZにまで及ぶ、請求項1に記載の単結晶ホウ素ドープダイヤモンド。
- INV@575nm/ID@551nmの比率が0〜100/1の間で変化する、請求項1に記載の単結晶ホウ素ドープダイヤモンド。
- ダイヤモンド構造においてケイ素を実質的に含まない、請求項1に記載の単結晶ホウ素ドープダイヤモンド。
- ホウ素濃度が0ppm〜100ppmの間である、請求項1に記載の単結晶ホウ素ドープダイヤモンド。
- 高靭性の単結晶ホウ素ドープダイヤモンドを成長させる方法であって、
i)種ダイヤモンドを、ダイヤモンドの成長表面全域での温度勾配を最小限に抑えるために、高い融点及び大きい熱伝導率を有する材料から作製されるヒートシンクホルダーに置くこと、
ii)ダイヤモンドの成長表面の温度を、成長中のダイヤモンド結晶の温度が約900℃〜1500℃の範囲にあるように制御すること、及び
iii)単結晶ダイヤモンドを、5%〜20%のCH4/H2と、5%〜20%のO2/CH4と、0%〜20%のN2/CH4と、ホウ素供給源とを含む蒸着チャンバにおいてダイヤモンドの成長表面にマイクロ波プラズマ化学蒸着によって成長させること
を含む、方法。 - 前記蒸着チャンバにおける圧力が約100Torr〜400Torrである、請求項9に記載の方法。
- 前記ホウ素供給源が、ジボラン、六方晶窒化ホウ素粉末、ホウ酸トリメチルガス、気化B2O3又はこれらの混合物である、請求項9に記載の方法。
- 前記ダイヤモンドの成長速度が約20μm/h〜100μm/hである、請求項9に記載の方法。
- 前記単結晶ダイヤモンドを、その靭性を改善するためにアニーリングすることをさらに含む、請求項9に記載の方法。
- 前記ヒートシンクホルダーがモリブデンから作製される、請求項9に記載の方法。
- 少なくとも約22MPa m1/2の靭性を有する、マイクロ波プラズマ化学蒸着によって成長した単結晶ホウ素ドープダイヤモンドであって、
i)種ダイヤモンドを、ダイヤモンドの成長表面全域における温度勾配を最小限に抑えるために、高い融点及び大きい熱伝導率を有する材料から作製されるヒートシンクホルダーに置くこと;
ii)ダイヤモンドの成長表面の温度を、成長中のダイヤモンド結晶の温度が約900℃〜1500℃の範囲にあるように制御すること;及び
iii)単結晶ダイヤモンドを、5%〜20%のCH4/H2と、5%〜20%のO2/CH4と、0%〜20%のN2/CH4と、ホウ素供給源とを含む蒸着チャンバにおいてダイヤモンドの成長表面にマイクロ波プラズマ化学蒸着によって成長させること
を含む方法によって成長した、前記単結晶ホウ素ドープダイヤモンド。 - O2の供給源が、一酸化炭素、二酸化炭素、水蒸気又はこれらの混合物である、請求項9に記載の方法。
- 前記単結晶ダイヤモンド種の配向が{100}面から0度〜15度ずれている、請求項9に記載の方法。
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