CN102084492B - 超韧单晶掺硼金刚石 - Google Patents

超韧单晶掺硼金刚石 Download PDF

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Publication number
CN102084492B
CN102084492B CN200980125978.8A CN200980125978A CN102084492B CN 102084492 B CN102084492 B CN 102084492B CN 200980125978 A CN200980125978 A CN 200980125978A CN 102084492 B CN102084492 B CN 102084492B
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China
Prior art keywords
diamond
boron
single crystal
doped
toughness
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Expired - Fee Related
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CN200980125978.8A
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English (en)
Chinese (zh)
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CN102084492A (zh
Inventor
梁琦
严智秀
毛和光
罗素·赫姆利
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Carnegie Institution of Washington
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Carnegie Institution of Washington
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/278—Diamond only doping or introduction of a secondary phase in the diamond
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/274—Diamond only using microwave discharges
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C30B25/165—Controlling or regulating the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
CN200980125978.8A 2008-05-05 2009-05-05 超韧单晶掺硼金刚石 Expired - Fee Related CN102084492B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US7152408P 2008-05-05 2008-05-05
US61/071,524 2008-05-05
PCT/US2009/002753 WO2009137020A1 (en) 2008-05-05 2009-05-05 Ultratough single crystal boron-doped diamond

Publications (2)

Publication Number Publication Date
CN102084492A CN102084492A (zh) 2011-06-01
CN102084492B true CN102084492B (zh) 2013-09-11

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CN200980125978.8A Expired - Fee Related CN102084492B (zh) 2008-05-05 2009-05-05 超韧单晶掺硼金刚石

Country Status (6)

Country Link
US (1) US9023306B2 (https=)
EP (1) EP2286459A4 (https=)
JP (1) JP5539968B2 (https=)
CN (1) CN102084492B (https=)
TW (1) TWI457475B (https=)
WO (1) WO2009137020A1 (https=)

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WO2010068419A2 (en) * 2008-11-25 2010-06-17 Carnegie Institution Of Washington Production of single crystal cvd diamond rapid growth rate
JP2013532109A (ja) 2010-05-17 2013-08-15 カーネギー インスチチューション オブ ワシントン 大形、高純度、単結晶のｃｖｄダイヤモンドの生成
GB201114379D0 (en) * 2011-08-22 2011-10-05 Element Six Abrasives Sa Temperature sensor
RU2484189C2 (ru) * 2011-08-24 2013-06-10 Игорь Владимирович Федосеев Способ получения алмазов с полупроводниковыми свойствами
EP2772330A4 (en) * 2012-01-10 2015-07-08 Sumitomo Elec Hardmetal Corp DIAMOND COATED TOOL
US9441312B2 (en) * 2012-06-29 2016-09-13 Sumitomo Electric Industries, Ltd. Diamond single crystal, method for producing the same, and single crystal diamond tool
JP6232817B2 (ja) * 2013-08-05 2017-11-22 住友電気工業株式会社 ナノ多結晶ダイヤモンドおよびこれを備える工具
US10316430B2 (en) * 2014-07-15 2019-06-11 Sumitomo Electric Industries, Ltd. Single crystal diamond, method for manufacturing single crystal diamond, and tool containing single crystal diamond
US20190054468A1 (en) 2015-10-23 2019-02-21 University Of Virginia Patent Foundation Devices, systems and methods for sample detection
CN107740184B (zh) * 2017-09-30 2019-07-19 湖北碳六科技有限公司 一种梯度单晶金刚石及其制备方法
CN108103571A (zh) * 2018-01-11 2018-06-01 宁波晶钻工业科技有限公司 一种单晶金刚石制备装置以及方法
CN112384648A (zh) * 2018-05-08 2021-02-19 M7D公司 在单晶金刚石基质中包括多个cvd生长的小晶粒金刚石的金刚石材料
CN108545738B (zh) * 2018-06-01 2020-07-10 北京科技大学 一种提高cvd单晶金刚石硬度及韧性的方法
CN109574666B (zh) * 2018-12-30 2021-06-15 南方科技大学 纳米结构含硼六方金刚石聚晶超硬复合材料及其制备方法和应用
US12480224B2 (en) * 2020-01-17 2025-11-25 Advanced Diamond Holdings, Llc Method for forming diamond having a desirable color by chemical vapor deposition comprising growing a doped diamond layer on a single crystal substrate
JP7754107B2 (ja) * 2020-11-04 2025-10-15 住友電気工業株式会社 合成単結晶ダイヤモンド及びその製造方法
CN113046725B (zh) * 2021-05-27 2021-11-16 武汉大学深圳研究院 一种氮化硼表层覆盖的nv色心金刚石、其制备方法和应用
CN115261984A (zh) * 2022-09-29 2022-11-01 北京芯美达科技有限公司 一种单晶金刚石晶格外延补偿方法
CN115970690B (zh) * 2022-12-15 2024-08-02 东南大学 一种晶体硼改性氧化铜催化剂及其制备方法和应用
US20240209498A1 (en) * 2022-12-23 2024-06-27 Great Lakes Crystal Technologies, Inc. Variable-temperature vapor deposition process
CN116973027B (zh) * 2023-07-04 2025-12-12 之江实验室 一种基于六方氮化硼中vb-色心的量子气压传感器及使用方法

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CN1612955A (zh) * 2001-12-14 2005-05-04 六号元素有限公司 硼掺杂的金刚石
CN1823008A (zh) * 2003-07-14 2006-08-23 华盛顿卡内基研究所 高韧性金刚石及其制造方法
CN101023028A (zh) * 2004-09-10 2007-08-22 华盛顿卡内基研究所 超硬cvd单晶金刚石及其三维生长

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CN1823008A (zh) * 2003-07-14 2006-08-23 华盛顿卡内基研究所 高韧性金刚石及其制造方法
CN101023028A (zh) * 2004-09-10 2007-08-22 华盛顿卡内基研究所 超硬cvd单晶金刚石及其三维生长

Also Published As

Publication number Publication date
TW201005139A (en) 2010-02-01
JP2011519814A (ja) 2011-07-14
JP5539968B2 (ja) 2014-07-02
TWI457475B (zh) 2014-10-21
WO2009137020A1 (en) 2009-11-12
EP2286459A1 (en) 2011-02-23
EP2286459A4 (en) 2014-03-12
US20100123098A1 (en) 2010-05-20
US9023306B2 (en) 2015-05-05
CN102084492A (zh) 2011-06-01

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Granted publication date: 20130911