JP5539968B2 - 超靭性の単結晶ホウ素ドープダイヤモンド - Google Patents
超靭性の単結晶ホウ素ドープダイヤモンド Download PDFInfo
- Publication number
- JP5539968B2 JP5539968B2 JP2011508486A JP2011508486A JP5539968B2 JP 5539968 B2 JP5539968 B2 JP 5539968B2 JP 2011508486 A JP2011508486 A JP 2011508486A JP 2011508486 A JP2011508486 A JP 2011508486A JP 5539968 B2 JP5539968 B2 JP 5539968B2
- Authority
- JP
- Japan
- Prior art keywords
- diamond
- single crystal
- boron
- toughness
- cvd
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010432 diamond Substances 0.000 title claims description 204
- 229910003460 diamond Inorganic materials 0.000 title claims description 186
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 title claims description 68
- 229910052796 boron Inorganic materials 0.000 title claims description 68
- 239000013078 crystal Substances 0.000 title claims description 66
- 238000005229 chemical vapour deposition Methods 0.000 claims description 43
- 238000000034 method Methods 0.000 claims description 37
- 239000000463 material Substances 0.000 claims description 28
- 238000000137 annealing Methods 0.000 claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 4
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 3
- WRECIMRULFAWHA-UHFFFAOYSA-N trimethyl borate Chemical compound COB(OC)OC WRECIMRULFAWHA-UHFFFAOYSA-N 0.000 claims description 3
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 2
- 239000001569 carbon dioxide Substances 0.000 claims description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims 2
- 238000007740 vapor deposition Methods 0.000 claims 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 44
- 229910052757 nitrogen Inorganic materials 0.000 description 24
- 230000008569 process Effects 0.000 description 12
- 238000007373 indentation Methods 0.000 description 11
- 239000010408 film Substances 0.000 description 10
- 239000007789 gas Substances 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- 238000005259 measurement Methods 0.000 description 7
- 238000010521 absorption reaction Methods 0.000 description 6
- 230000006872 improvement Effects 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 238000010348 incorporation Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- 238000002329 infrared spectrum Methods 0.000 description 4
- 238000000103 photoluminescence spectrum Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000005553 drilling Methods 0.000 description 3
- 239000010437 gem Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- 238000000259 microwave plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000012552 review Methods 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 238000005755 formation reaction Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000005459 micromachining Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 241000894007 species Species 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 description 1
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- 241001590997 Moolgarda engeli Species 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000007656 fracture toughness test Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002905 metal composite material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000013001 point bending Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/278—Diamond only doping or introduction of a secondary phase in the diamond
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/274—Diamond only using microwave discharges
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
- C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
- C30B25/165—Controlling or regulating the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
Landscapes
- Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US7152408P | 2008-05-05 | 2008-05-05 | |
| US61/071,524 | 2008-05-05 | ||
| PCT/US2009/002753 WO2009137020A1 (en) | 2008-05-05 | 2009-05-05 | Ultratough single crystal boron-doped diamond |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011519814A JP2011519814A (ja) | 2011-07-14 |
| JP2011519814A5 JP2011519814A5 (https=) | 2012-06-21 |
| JP5539968B2 true JP5539968B2 (ja) | 2014-07-02 |
Family
ID=41264865
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011508486A Expired - Fee Related JP5539968B2 (ja) | 2008-05-05 | 2009-05-05 | 超靭性の単結晶ホウ素ドープダイヤモンド |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9023306B2 (https=) |
| EP (1) | EP2286459A4 (https=) |
| JP (1) | JP5539968B2 (https=) |
| CN (1) | CN102084492B (https=) |
| TW (1) | TWI457475B (https=) |
| WO (1) | WO2009137020A1 (https=) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010068419A2 (en) * | 2008-11-25 | 2010-06-17 | Carnegie Institution Of Washington | Production of single crystal cvd diamond rapid growth rate |
| JP2013532109A (ja) | 2010-05-17 | 2013-08-15 | カーネギー インスチチューション オブ ワシントン | 大形、高純度、単結晶のｃｖｄダイヤモンドの生成 |
| GB201114379D0 (en) * | 2011-08-22 | 2011-10-05 | Element Six Abrasives Sa | Temperature sensor |
| RU2484189C2 (ru) * | 2011-08-24 | 2013-06-10 | Игорь Владимирович Федосеев | Способ получения алмазов с полупроводниковыми свойствами |
| EP2772330A4 (en) * | 2012-01-10 | 2015-07-08 | Sumitomo Elec Hardmetal Corp | DIAMOND COATED TOOL |
| US9441312B2 (en) * | 2012-06-29 | 2016-09-13 | Sumitomo Electric Industries, Ltd. | Diamond single crystal, method for producing the same, and single crystal diamond tool |
| JP6232817B2 (ja) * | 2013-08-05 | 2017-11-22 | 住友電気工業株式会社 | ナノ多結晶ダイヤモンドおよびこれを備える工具 |
| US10316430B2 (en) * | 2014-07-15 | 2019-06-11 | Sumitomo Electric Industries, Ltd. | Single crystal diamond, method for manufacturing single crystal diamond, and tool containing single crystal diamond |
| US20190054468A1 (en) | 2015-10-23 | 2019-02-21 | University Of Virginia Patent Foundation | Devices, systems and methods for sample detection |
| CN107740184B (zh) * | 2017-09-30 | 2019-07-19 | 湖北碳六科技有限公司 | 一种梯度单晶金刚石及其制备方法 |
| CN108103571A (zh) * | 2018-01-11 | 2018-06-01 | 宁波晶钻工业科技有限公司 | 一种单晶金刚石制备装置以及方法 |
| CN112384648A (zh) * | 2018-05-08 | 2021-02-19 | M7D公司 | 在单晶金刚石基质中包括多个cvd生长的小晶粒金刚石的金刚石材料 |
| CN108545738B (zh) * | 2018-06-01 | 2020-07-10 | 北京科技大学 | 一种提高cvd单晶金刚石硬度及韧性的方法 |
| CN109574666B (zh) * | 2018-12-30 | 2021-06-15 | 南方科技大学 | 纳米结构含硼六方金刚石聚晶超硬复合材料及其制备方法和应用 |
| US12480224B2 (en) * | 2020-01-17 | 2025-11-25 | Advanced Diamond Holdings, Llc | Method for forming diamond having a desirable color by chemical vapor deposition comprising growing a doped diamond layer on a single crystal substrate |
| JP7754107B2 (ja) * | 2020-11-04 | 2025-10-15 | 住友電気工業株式会社 | 合成単結晶ダイヤモンド及びその製造方法 |
| CN113046725B (zh) * | 2021-05-27 | 2021-11-16 | 武汉大学深圳研究院 | 一种氮化硼表层覆盖的nv色心金刚石、其制备方法和应用 |
| CN115261984A (zh) * | 2022-09-29 | 2022-11-01 | 北京芯美达科技有限公司 | 一种单晶金刚石晶格外延补偿方法 |
| CN115970690B (zh) * | 2022-12-15 | 2024-08-02 | 东南大学 | 一种晶体硼改性氧化铜催化剂及其制备方法和应用 |
| US20240209498A1 (en) * | 2022-12-23 | 2024-06-27 | Great Lakes Crystal Technologies, Inc. | Variable-temperature vapor deposition process |
| CN116973027B (zh) * | 2023-07-04 | 2025-12-12 | 之江实验室 | 一种基于六方氮化硼中vb-色心的量子气压传感器及使用方法 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02260470A (ja) * | 1989-03-30 | 1990-10-23 | Sumitomo Electric Ind Ltd | 発光素子 |
| EP0543392A3 (en) * | 1991-11-21 | 1993-10-20 | Canon Kk | Diamond semiconductor device and method of producing the same |
| GB9616043D0 (en) | 1996-07-31 | 1996-09-11 | De Beers Ind Diamond | Diamond |
| US6582513B1 (en) | 1998-05-15 | 2003-06-24 | Apollo Diamond, Inc. | System and method for producing synthetic diamond |
| US6322891B1 (en) | 2000-04-28 | 2001-11-27 | General Electric Company | Thermally-diffused boron diamond and its production |
| AU2001281404B2 (en) * | 2001-08-08 | 2008-07-03 | Apollo Diamond, Inc. | System and method for producing synthetic diamond |
| UA81614C2 (ru) * | 2001-11-07 | 2008-01-25 | Карнеги Инститьюшн Ов Вашингтон | Устройство для изготовления алмазов, узел удержания образца (варианты) и способ изготовления алмазов (варианты) |
| GB0130005D0 (en) | 2001-12-14 | 2002-02-06 | Diamanx Products Ltd | Boron doped diamond |
| US20050025886A1 (en) | 2003-07-14 | 2005-02-03 | Carnegie Institution Of Washington | Annealing single crystal chemical vapor depositon diamonds |
| JP4385764B2 (ja) * | 2003-12-26 | 2009-12-16 | 住友電気工業株式会社 | ダイヤモンド単結晶基板の製造方法 |
| CA2589299C (en) * | 2004-09-10 | 2014-04-01 | Carnegie Institution Of Washington | Ultratough cvd single crystal diamond and three dimensional growth thereof |
| US7883684B2 (en) * | 2005-05-25 | 2011-02-08 | Carnegie Institution Of Washington | Colorless single-crystal CVD diamond at rapid growth rate |
| US7399358B2 (en) | 2005-09-05 | 2008-07-15 | Rajneesh Bhandari | Synthesis of large homoepitaxial monocrystalline diamond |
| WO2007081492A2 (en) * | 2006-01-04 | 2007-07-19 | Uab Research Foundation | High growth rate methods of producing high-quality diamonds |
| WO2007092893A2 (en) | 2006-02-07 | 2007-08-16 | Target Technology Company, Llc | Materials and methods for the manufacture of large crystal diamonds |
-
2009
- 2009-05-05 TW TW098114858A patent/TWI457475B/zh not_active IP Right Cessation
- 2009-05-05 US US12/435,565 patent/US9023306B2/en active Active
- 2009-05-05 EP EP09743007.8A patent/EP2286459A4/en not_active Withdrawn
- 2009-05-05 CN CN200980125978.8A patent/CN102084492B/zh not_active Expired - Fee Related
- 2009-05-05 JP JP2011508486A patent/JP5539968B2/ja not_active Expired - Fee Related
- 2009-05-05 WO PCT/US2009/002753 patent/WO2009137020A1/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| TW201005139A (en) | 2010-02-01 |
| CN102084492B (zh) | 2013-09-11 |
| JP2011519814A (ja) | 2011-07-14 |
| TWI457475B (zh) | 2014-10-21 |
| WO2009137020A1 (en) | 2009-11-12 |
| EP2286459A1 (en) | 2011-02-23 |
| EP2286459A4 (en) | 2014-03-12 |
| US20100123098A1 (en) | 2010-05-20 |
| US9023306B2 (en) | 2015-05-05 |
| CN102084492A (zh) | 2011-06-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5539968B2 (ja) | 超靭性の単結晶ホウ素ドープダイヤモンド | |
| US6582513B1 (en) | System and method for producing synthetic diamond | |
| Achard et al. | The control of growth parameters in the synthesis of high-quality single crystalline diamond by CVD | |
| CA2456847C (en) | System and method for producing synthetic diamond | |
| AU2006251553B2 (en) | Colorless single-crystal CVD diamond at rapid growth rate | |
| US7820131B2 (en) | Diamond uses/applications based on single-crystal CVD diamond produced at rapid growth rate | |
| US20080157096A1 (en) | System and method for producing synthetic diamond | |
| US7594968B2 (en) | Ultratough CVD single crystal diamond and three dimensional growth thereof | |
| AU2001281404A1 (en) | System and method for producing synthetic diamond | |
| Liang et al. | Enhancing the mechanical properties of single-crystal CVD diamond | |
| WO2011146460A1 (en) | Production of large, high purity single crystal cvd diamond | |
| HK1144449A (en) | System and method for producing synthetic diamond | |
| HK1106486A (en) | Ultratough cvd single crystal diamond and three dimensional growth thereof | |
| HK1093334A1 (zh) | 高韧性金刚石及其制造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120501 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20120501 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20130731 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130813 |
|
| A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20131107 |
|
| A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20131114 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140213 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140422 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 5539968 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140501 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |