JP2011519469A5 - - Google Patents
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- JP2011519469A5 JP2011519469A5 JP2010532009A JP2010532009A JP2011519469A5 JP 2011519469 A5 JP2011519469 A5 JP 2011519469A5 JP 2010532009 A JP2010532009 A JP 2010532009A JP 2010532009 A JP2010532009 A JP 2010532009A JP 2011519469 A5 JP2011519469 A5 JP 2011519469A5
- Authority
- JP
- Japan
- Prior art keywords
- conductivity type
- zone
- fet
- body material
- subsurface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000463 material Substances 0.000 claims 122
- 239000002019 doping agent Substances 0.000 claims 75
- 239000004065 semiconductor Substances 0.000 claims 62
- 238000000034 method Methods 0.000 claims 24
- 238000004519 manufacturing process Methods 0.000 claims 20
- 230000007423 decrease Effects 0.000 claims 16
- 230000003247 decreasing effect Effects 0.000 claims 7
- 230000005669 field effect Effects 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 2
- 210000004556 brain Anatomy 0.000 claims 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/981,355 US7838369B2 (en) | 2005-08-29 | 2007-10-31 | Fabrication of semiconductor architecture having field-effect transistors especially suitable for analog applications |
| US11/981,481 | 2007-10-31 | ||
| US11/981,355 | 2007-10-31 | ||
| US11/981,481 US7642574B2 (en) | 2005-08-29 | 2007-10-31 | Semiconductor architecture having field-effect transistors especially suitable for analog applications |
| PCT/US2008/011463 WO2009058187A1 (en) | 2007-10-31 | 2008-10-02 | Structure and fabrication of semiconductor architecture having field-effect transistors especially suitable for analog applications. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2011519469A JP2011519469A (ja) | 2011-07-07 |
| JP2011519469A5 true JP2011519469A5 (https=) | 2011-11-17 |
Family
ID=40591338
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010532009A Pending JP2011519469A (ja) | 2007-10-31 | 2008-10-02 | 特にアナログ適用例に適した電界効果トランジスタを具備する半導体アーキテクチャの構成及び製造 |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JP2011519469A (https=) |
| KR (1) | KR20100084642A (https=) |
| CN (1) | CN101971347A (https=) |
| DE (1) | DE112008002924B4 (https=) |
| TW (1) | TWI426564B (https=) |
| WO (1) | WO2009058187A1 (https=) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8084827B2 (en) * | 2009-03-27 | 2011-12-27 | National Semiconductor Corporation | Structure and fabrication of like-polarity field-effect transistors having different configurations of source/drain extensions, halo pockets, and gate dielectric thicknesses |
| JP5423269B2 (ja) | 2009-09-15 | 2014-02-19 | 富士通セミコンダクター株式会社 | 半導体装置とその製造方法 |
| JP5560812B2 (ja) * | 2010-03-23 | 2014-07-30 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
| KR102180554B1 (ko) | 2013-12-04 | 2020-11-19 | 삼성디스플레이 주식회사 | 박막 트랜지스터 및 이의 제조 방법 |
| US10424581B2 (en) * | 2016-04-18 | 2019-09-24 | Samsung Electronics Co., Ltd. | Sub 59 MV/decade SI CMOS compatible tunnel FET as footer transistor for power gating |
| US11251095B2 (en) | 2016-06-13 | 2022-02-15 | Globalfoundries Singapore Pte. Ltd. | High gain transistor for analog applications |
| US11288430B2 (en) * | 2017-11-27 | 2022-03-29 | Globalfoundries U.S. Inc. | Producing models for dynamically depleted transistors using systems having simulation circuits |
| CN108615675B (zh) * | 2018-05-04 | 2020-12-11 | 长江存储科技有限责任公司 | 衬底掺杂结构及其形成方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5744372A (en) * | 1995-04-12 | 1998-04-28 | National Semiconductor Corporation | Fabrication of complementary field-effect transistors each having multi-part channel |
| US6127700A (en) | 1995-09-12 | 2000-10-03 | National Semiconductor Corporation | Field-effect transistor having local threshold-adjust doping |
| JP3529549B2 (ja) * | 1996-05-23 | 2004-05-24 | 東芝マイクロエレクトロニクス株式会社 | 半導体装置の製造方法 |
| US6548642B1 (en) | 1997-07-21 | 2003-04-15 | Ohio University | Synthetic genes for plant gums |
| US7145191B1 (en) * | 2000-03-31 | 2006-12-05 | National Semiconductor Corporation | P-channel field-effect transistor with reduced junction capacitance |
| US6566204B1 (en) * | 2000-03-31 | 2003-05-20 | National Semiconductor Corporation | Use of mask shadowing and angled implantation in fabricating asymmetrical field-effect transistors |
| US6548842B1 (en) | 2000-03-31 | 2003-04-15 | National Semiconductor Corporation | Field-effect transistor for alleviating short-channel effects |
| KR100580796B1 (ko) * | 2003-12-10 | 2006-05-17 | 동부일렉트로닉스 주식회사 | 반도체 소자의 제조 방법 |
| US7176530B1 (en) * | 2004-03-17 | 2007-02-13 | National Semiconductor Corporation | Configuration and fabrication of semiconductor structure having n-channel channel-junction field-effect transistor |
-
2008
- 2008-09-11 TW TW097134813A patent/TWI426564B/zh active
- 2008-10-02 WO PCT/US2008/011463 patent/WO2009058187A1/en not_active Ceased
- 2008-10-02 JP JP2010532009A patent/JP2011519469A/ja active Pending
- 2008-10-02 KR KR1020107009739A patent/KR20100084642A/ko not_active Ceased
- 2008-10-02 CN CN2008801146253A patent/CN101971347A/zh active Pending
- 2008-10-02 DE DE112008002924.5T patent/DE112008002924B4/de active Active
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