TWI426564B - 特別適合類比應用之具有場效電晶體的半導體架構之構造與製造 - Google Patents

特別適合類比應用之具有場效電晶體的半導體架構之構造與製造 Download PDF

Info

Publication number
TWI426564B
TWI426564B TW097134813A TW97134813A TWI426564B TW I426564 B TWI426564 B TW I426564B TW 097134813 A TW097134813 A TW 097134813A TW 97134813 A TW97134813 A TW 97134813A TW I426564 B TWI426564 B TW I426564B
Authority
TW
Taiwan
Prior art keywords
dopant
semiconductor
additional
region
conductivity type
Prior art date
Application number
TW097134813A
Other languages
English (en)
Chinese (zh)
Other versions
TW200924075A (en
Inventor
布魯西亞 康史坦丁
Original Assignee
國家半導體公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/981,355 external-priority patent/US7838369B2/en
Priority claimed from US11/981,481 external-priority patent/US7642574B2/en
Application filed by 國家半導體公司 filed Critical 國家半導體公司
Publication of TW200924075A publication Critical patent/TW200924075A/zh
Application granted granted Critical
Publication of TWI426564B publication Critical patent/TWI426564B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/299—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations
    • H10D62/307—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations the doping variations being parallel to the channel lengths
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/314—Channel regions of field-effect devices of FETs of IGFETs having vertical doping variations 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/371—Inactive supplementary semiconductor regions, e.g. for preventing punch-through, improving capacity effect or leakage current
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0167—Manufacturing their channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/017—Manufacturing their source or drain regions, e.g. silicided source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0191—Manufacturing their doped wells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/22—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks
    • H10P30/221—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks characterised by the angle between the ion beam and the mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/222—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/225—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of a molecular ion, e.g. decaborane

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
TW097134813A 2007-10-31 2008-09-11 特別適合類比應用之具有場效電晶體的半導體架構之構造與製造 TWI426564B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/981,355 US7838369B2 (en) 2005-08-29 2007-10-31 Fabrication of semiconductor architecture having field-effect transistors especially suitable for analog applications
US11/981,481 US7642574B2 (en) 2005-08-29 2007-10-31 Semiconductor architecture having field-effect transistors especially suitable for analog applications

Publications (2)

Publication Number Publication Date
TW200924075A TW200924075A (en) 2009-06-01
TWI426564B true TWI426564B (zh) 2014-02-11

Family

ID=40591338

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097134813A TWI426564B (zh) 2007-10-31 2008-09-11 特別適合類比應用之具有場效電晶體的半導體架構之構造與製造

Country Status (6)

Country Link
JP (1) JP2011519469A (https=)
KR (1) KR20100084642A (https=)
CN (1) CN101971347A (https=)
DE (1) DE112008002924B4 (https=)
TW (1) TWI426564B (https=)
WO (1) WO2009058187A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8084827B2 (en) * 2009-03-27 2011-12-27 National Semiconductor Corporation Structure and fabrication of like-polarity field-effect transistors having different configurations of source/drain extensions, halo pockets, and gate dielectric thicknesses
JP5423269B2 (ja) 2009-09-15 2014-02-19 富士通セミコンダクター株式会社 半導体装置とその製造方法
JP5560812B2 (ja) * 2010-03-23 2014-07-30 富士通セミコンダクター株式会社 半導体装置及びその製造方法
KR102180554B1 (ko) 2013-12-04 2020-11-19 삼성디스플레이 주식회사 박막 트랜지스터 및 이의 제조 방법
US10424581B2 (en) * 2016-04-18 2019-09-24 Samsung Electronics Co., Ltd. Sub 59 MV/decade SI CMOS compatible tunnel FET as footer transistor for power gating
US11251095B2 (en) 2016-06-13 2022-02-15 Globalfoundries Singapore Pte. Ltd. High gain transistor for analog applications
US11288430B2 (en) * 2017-11-27 2022-03-29 Globalfoundries U.S. Inc. Producing models for dynamically depleted transistors using systems having simulation circuits
CN108615675B (zh) * 2018-05-04 2020-12-11 长江存储科技有限责任公司 衬底掺杂结构及其形成方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6576966B1 (en) * 1995-04-12 2003-06-10 National Semiconductor Corporation Field-effect transistor having multi-part channel
US6927116B2 (en) * 1996-05-23 2005-08-09 Kabushiki Kaisha Toshiba Semiconductor device having a double-well structure and method for manufacturing the same
US7145191B1 (en) * 2000-03-31 2006-12-05 National Semiconductor Corporation P-channel field-effect transistor with reduced junction capacitance
US7176530B1 (en) * 2004-03-17 2007-02-13 National Semiconductor Corporation Configuration and fabrication of semiconductor structure having n-channel channel-junction field-effect transistor
US7235450B2 (en) * 2003-12-10 2007-06-26 Dongbu Electronics, Co., Ltd. Methods for fabricating semiconductor devices

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6127700A (en) 1995-09-12 2000-10-03 National Semiconductor Corporation Field-effect transistor having local threshold-adjust doping
US6548642B1 (en) 1997-07-21 2003-04-15 Ohio University Synthetic genes for plant gums
US6566204B1 (en) * 2000-03-31 2003-05-20 National Semiconductor Corporation Use of mask shadowing and angled implantation in fabricating asymmetrical field-effect transistors
US6548842B1 (en) 2000-03-31 2003-04-15 National Semiconductor Corporation Field-effect transistor for alleviating short-channel effects

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6576966B1 (en) * 1995-04-12 2003-06-10 National Semiconductor Corporation Field-effect transistor having multi-part channel
US6927116B2 (en) * 1996-05-23 2005-08-09 Kabushiki Kaisha Toshiba Semiconductor device having a double-well structure and method for manufacturing the same
US7145191B1 (en) * 2000-03-31 2006-12-05 National Semiconductor Corporation P-channel field-effect transistor with reduced junction capacitance
US7235450B2 (en) * 2003-12-10 2007-06-26 Dongbu Electronics, Co., Ltd. Methods for fabricating semiconductor devices
US7176530B1 (en) * 2004-03-17 2007-02-13 National Semiconductor Corporation Configuration and fabrication of semiconductor structure having n-channel channel-junction field-effect transistor

Also Published As

Publication number Publication date
DE112008002924T5 (de) 2010-12-02
DE112008002924B4 (de) 2019-03-28
WO2009058187A1 (en) 2009-05-07
CN101971347A (zh) 2011-02-09
KR20100084642A (ko) 2010-07-27
TW200924075A (en) 2009-06-01
JP2011519469A (ja) 2011-07-07

Similar Documents

Publication Publication Date Title
US8309420B1 (en) Fabrication of semiconductor architecture having field-effect transistors especially suitable for analog applications
US7863681B1 (en) Semiconductor structure utilizing empty and filled wells
TWI426564B (zh) 特別適合類比應用之具有場效電晶體的半導體架構之構造與製造
US7642574B2 (en) Semiconductor architecture having field-effect transistors especially suitable for analog applications
US20130126970A1 (en) Configuration and fabrication of semiconductor structure using empty and filled wells
JP2012522361A (ja) ソース／ドレインゾーンに沿って調節したポケット部分を具備する非対称的電界効果トランジスタを有する半導体構成体の構成及び製造
US6677210B1 (en) High voltage transistors with graded extension
JP2012522366A (ja) 電界効果トランジスタのソース延長部及びドレイン延長部が異なるドーパントで画定される半導体構成体の構成及び製造
JP2012522363A (ja) 延長型ドレイン電界効果トランジスタを有する半導体構成体の構成及び製造
JP2012522371A (ja) ソース／ドレイン延長部又は／及びハローポケットと組み合わせて空のウエルを使用した電界効果トランジスタの構成及び製造
EP2412015A1 (en) Fabrication and structure of asymmetric field-effect transistors using l-shaped spacers
JP2012522369A (ja) ソース／ドレイン延長部、ハローポケット及びゲート誘電体厚さの異なる構成を有する同極性の電界効果トランジスタの構成及び製造
JP2012522365A (ja) 非対称的チャンネルゾーン及び異なる構成としたソース／ドレイン延長部を有する非対称的電界効果トランジスタの構成及び製造
JP2012522370A (ja) 調整した垂直窒素濃度分布を具備する窒化ゲート誘電体層を有する電界効果トランジスタの構成及び製造
JP2012522367A (ja) 複数の局所的濃度最大によって画定されたソース／ドレイン延長部を有する電界効果トランジスタの構成及び製造
US20080026515A1 (en) Silicide block isolated junction field effect transistor source, drain and gate