KR20100084642A - 아날로그 용도에 특히 적합한 전계-효과 트랜지스터를 갖는 반도체 아키텍쳐의 구조체 및 제조 - Google Patents

아날로그 용도에 특히 적합한 전계-효과 트랜지스터를 갖는 반도체 아키텍쳐의 구조체 및 제조 Download PDF

Info

Publication number
KR20100084642A
KR20100084642A KR1020107009739A KR20107009739A KR20100084642A KR 20100084642 A KR20100084642 A KR 20100084642A KR 1020107009739 A KR1020107009739 A KR 1020107009739A KR 20107009739 A KR20107009739 A KR 20107009739A KR 20100084642 A KR20100084642 A KR 20100084642A
Authority
KR
South Korea
Prior art keywords
semiconductor
main
conductivity type
additional
dopant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020107009739A
Other languages
English (en)
Korean (ko)
Inventor
콘스탄틴 불루체아
Original Assignee
내셔널 세미콘덕터 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/981,355 external-priority patent/US7838369B2/en
Priority claimed from US11/981,481 external-priority patent/US7642574B2/en
Application filed by 내셔널 세미콘덕터 코포레이션 filed Critical 내셔널 세미콘덕터 코포레이션
Publication of KR20100084642A publication Critical patent/KR20100084642A/ko
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/299—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations
    • H10D62/307—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations the doping variations being parallel to the channel lengths
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/314—Channel regions of field-effect devices of FETs of IGFETs having vertical doping variations 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/371—Inactive supplementary semiconductor regions, e.g. for preventing punch-through, improving capacity effect or leakage current
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0167—Manufacturing their channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/017—Manufacturing their source or drain regions, e.g. silicided source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0191—Manufacturing their doped wells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/22—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks
    • H10P30/221—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks characterised by the angle between the ion beam and the mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/222—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/225—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of a molecular ion, e.g. decaborane

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
KR1020107009739A 2007-10-31 2008-10-02 아날로그 용도에 특히 적합한 전계-효과 트랜지스터를 갖는 반도체 아키텍쳐의 구조체 및 제조 Ceased KR20100084642A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US11/981,355 US7838369B2 (en) 2005-08-29 2007-10-31 Fabrication of semiconductor architecture having field-effect transistors especially suitable for analog applications
US11/981,481 2007-10-31
US11/981,355 2007-10-31
US11/981,481 US7642574B2 (en) 2005-08-29 2007-10-31 Semiconductor architecture having field-effect transistors especially suitable for analog applications

Publications (1)

Publication Number Publication Date
KR20100084642A true KR20100084642A (ko) 2010-07-27

Family

ID=40591338

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107009739A Ceased KR20100084642A (ko) 2007-10-31 2008-10-02 아날로그 용도에 특히 적합한 전계-효과 트랜지스터를 갖는 반도체 아키텍쳐의 구조체 및 제조

Country Status (6)

Country Link
JP (1) JP2011519469A (https=)
KR (1) KR20100084642A (https=)
CN (1) CN101971347A (https=)
DE (1) DE112008002924B4 (https=)
TW (1) TWI426564B (https=)
WO (1) WO2009058187A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9263590B2 (en) 2013-12-04 2016-02-16 Samsung Display Co., Ltd. Thin film transistor and manufacturing method thereof
KR20170119278A (ko) * 2016-04-18 2017-10-26 삼성전자주식회사 반도체 장치와 그 제조 방법 및 로직 마이크로 프로세서

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8084827B2 (en) * 2009-03-27 2011-12-27 National Semiconductor Corporation Structure and fabrication of like-polarity field-effect transistors having different configurations of source/drain extensions, halo pockets, and gate dielectric thicknesses
JP5423269B2 (ja) 2009-09-15 2014-02-19 富士通セミコンダクター株式会社 半導体装置とその製造方法
JP5560812B2 (ja) * 2010-03-23 2014-07-30 富士通セミコンダクター株式会社 半導体装置及びその製造方法
US11251095B2 (en) 2016-06-13 2022-02-15 Globalfoundries Singapore Pte. Ltd. High gain transistor for analog applications
US11288430B2 (en) * 2017-11-27 2022-03-29 Globalfoundries U.S. Inc. Producing models for dynamically depleted transistors using systems having simulation circuits
CN108615675B (zh) * 2018-05-04 2020-12-11 长江存储科技有限责任公司 衬底掺杂结构及其形成方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5744372A (en) * 1995-04-12 1998-04-28 National Semiconductor Corporation Fabrication of complementary field-effect transistors each having multi-part channel
US6127700A (en) 1995-09-12 2000-10-03 National Semiconductor Corporation Field-effect transistor having local threshold-adjust doping
JP3529549B2 (ja) * 1996-05-23 2004-05-24 東芝マイクロエレクトロニクス株式会社 半導体装置の製造方法
US6548642B1 (en) 1997-07-21 2003-04-15 Ohio University Synthetic genes for plant gums
US7145191B1 (en) * 2000-03-31 2006-12-05 National Semiconductor Corporation P-channel field-effect transistor with reduced junction capacitance
US6566204B1 (en) * 2000-03-31 2003-05-20 National Semiconductor Corporation Use of mask shadowing and angled implantation in fabricating asymmetrical field-effect transistors
US6548842B1 (en) 2000-03-31 2003-04-15 National Semiconductor Corporation Field-effect transistor for alleviating short-channel effects
KR100580796B1 (ko) * 2003-12-10 2006-05-17 동부일렉트로닉스 주식회사 반도체 소자의 제조 방법
US7176530B1 (en) * 2004-03-17 2007-02-13 National Semiconductor Corporation Configuration and fabrication of semiconductor structure having n-channel channel-junction field-effect transistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9263590B2 (en) 2013-12-04 2016-02-16 Samsung Display Co., Ltd. Thin film transistor and manufacturing method thereof
KR20170119278A (ko) * 2016-04-18 2017-10-26 삼성전자주식회사 반도체 장치와 그 제조 방법 및 로직 마이크로 프로세서

Also Published As

Publication number Publication date
DE112008002924T5 (de) 2010-12-02
DE112008002924B4 (de) 2019-03-28
TWI426564B (zh) 2014-02-11
WO2009058187A1 (en) 2009-05-07
CN101971347A (zh) 2011-02-09
TW200924075A (en) 2009-06-01
JP2011519469A (ja) 2011-07-07

Similar Documents

Publication Publication Date Title
US8148777B1 (en) Structure and fabrication of insulated-gate field-effect transistor with hypoabrupt change in body dopant concentration below source/drain zone
US8309420B1 (en) Fabrication of semiconductor architecture having field-effect transistors especially suitable for analog applications
US7642574B2 (en) Semiconductor architecture having field-effect transistors especially suitable for analog applications
KR20120003910A (ko) 엠프티 웰 및 충진된 웰을 이용한 반도체 구조의 구성 및 제조
KR20110133621A (ko) 소스/드레인 존을 따르는 테일러링된 포켓 부분을 가진 비대칭 전계-효과 트랜지스터를 구비한 반도체 구조의 구성 및 제조
KR20100084642A (ko) 아날로그 용도에 특히 적합한 전계-효과 트랜지스터를 갖는 반도체 아키텍쳐의 구조체 및 제조
KR20110123814A (ko) 드레인 확장형 전계-효과 트랜지스터를 가진 반도체 구조의 구성 및 제조
KR20110135978A (ko) 전계-효과 트랜지스터의 소스 확장부와 드레인 확장부가 상이한 도펀트들로 규정된 반도체 구조의 구성 및 제조
KR20110132470A (ko) 엠프티 웰을 소스/드레인 확장부들 또는/및 할로 포켓과 조합하여 사용하는 전계-효과 트랜지스터의 구조 및 제조
KR20110133622A (ko) 소스/드레인 확장부들, 할로 포켓들, 및 게이트 유전체 두께의 상이한 구성들을 갖는 유사-극성 전계-효과 트랜지스터들의 구조 및 제조
KR20120003467A (ko) 비대칭 채널 존 및 상이하게 구성된 소스/드레인 확장부들을 가진 비대칭 전계-효과 트랜지스터의 구조 및 제조
KR20110135979A (ko) 테일러링된 수직 질소 농도 프로파일을 가진 질화 게이트 유전체 층을 갖는 전계-효과 트랜지스터의 구조 및 제조
US12113065B2 (en) Fin-based field effect transistor (finFET) device with enhanced on-resistance and breakdown voltage
KR20120003468A (ko) 복수의 로컬 농도 최대들에 의해 규정된 소스/드레인 확장부를 가진 전계-효과 트랜지스터의 구조 및 제조

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000