JP2011515829A - 中空インサートを備えた接続構成部品およびその製造方法 - Google Patents
中空インサートを備えた接続構成部品およびその製造方法 Download PDFInfo
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- JP2011515829A JP2011515829A JP2010547220A JP2010547220A JP2011515829A JP 2011515829 A JP2011515829 A JP 2011515829A JP 2010547220 A JP2010547220 A JP 2010547220A JP 2010547220 A JP2010547220 A JP 2010547220A JP 2011515829 A JP2011515829 A JP 2011515829A
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Abstract
Description
−第1の熱圧着手法は、ある温度で、2つのビードを、塑性変形によってそれらが結合するように互いに押し付けるステップを含む(図1A)。
−微細な相互接続ピッチ用に開発された第2の手法は、第1の手法において使用された温度より低い温度で動作することができる。第2の手法は、熱圧着されたビードの1つを低温ではんだの自然酸化物を壊す「硬い」突起に置き換えることを伴い、支持断面積(図1B)を小さくし、これにより以下を可能にする。すなわち、
・組み立て温度および組み立て圧力を低減する。
・圧壊を制御する。
Fhyb=k×S×N
−構成部品の表面上に樹脂層を堆積させるステップと、
−その層内にインサートの形状に適合される開口を作製するステップと、
−層の表面に沿ってインサートを構成する材料または複数の材料を堆積させるステップと、
−層の上部平面上の材料または複数の材料を排除するステップと、
−層を除去するステップと、
を含む。
−結果として得られるインサートが、開孔の最小直径(最小値D)と等しい直径を有し、電解成長または「リフトオフ」蒸着によってインサートの材料で充填することができる孔を画定する。
−インサートの材料の層を堆積させ、それをエッチングする。この手法も、最小の分解能Dによって制限されている。
S=π×D2/4(ここで、Dはフォトリソグラフィ分解能である)
であることは全く明らかである。
S’=π×(D2−D02)/4=π×2×e×2×D/4
すなわち
S’=π×e×D
ここで、eはインサートの表皮の厚さを定義し、Dよりはるかに小さい。
F’/F=kS’N/kSN=S’/S
すなわち、F’/F=4×e/D (e<<D)
である。
−前挿入ステップにおいて、第1の構成部品によって保持される中空の面取りされたインサートは、ハイブリッド形成されるべき第2の構成部品の接続バンプ内に部分的に挿入される。このステップは、真空機器を含まない標準的装着機の助けを借りて実行される。これは、周囲温度で有利に実行される。
−最終的一括挿入は、位置合わせ機能の無い単純な押圧機器内において真空下で実施される。
−有利には周囲温度で実行される、位置合わせおよびバンプ内へのインサートの部分的挿入のステップと、
−有利には真空中で実行される最終的挿入のステップと、
を含む。
このステップは、半導体産業で使用されるダマシンエッチングと同じようにして実行することができる。基板の上部面が、機械的に、または化学機械的に研磨され、金属層および表面犠牲層の一部が除去され、開口内のチューブ部分はその高さの小部分にわたってのみエッチングされる。
以前のステップで作成されたウェーハは、図5Aに示されるように、全表面を平坦化し、開口を埋める流体樹脂で被覆される。
−高さ(H)=3μm
−直径(D)=3μm
−ピッチ=5μm
−表皮の厚さ(e=堆積された薄層金属厚)=150nm (Ti+TiN+Au)
F’/F=4×e/D=4×0.15/3=0.2
第1および第2のステップが、上で述べたように行われる(図7Aおよび図7B)。
第1のステップは、変更されない(図8A)。
最初に、第2の構成部品の面、すなわち基板上に存在するはんだバンプ内で面取りされたチューブの低力の事前インサートによって、全てのチップを組み立てのために配置する。
次いで、事前挿入された回路が配置されたウェーハに、真空中で大きな挿入力を加え、面取りされた中空インサートを対応する接続バンプ内に完全に挿入する。
・インサートが、他の構成部品の埋設された区域に挿入される。
・インサートが、他の構成部品の表面上の突起に挿入される。
・インサートが、それ自体と同様な形状の中空の突起に挿入される。このとき、それぞれの直径は適切でなければならず、突起の内径がインサートの外径より大きい、またはその逆であるが、接触を確実にするために、それぞれの直径は、特に、インサートの突起内への強制的挿入後に、十分に近接している。
−挿入による多数の接続を有する大規模異種検知マトリックス(冷却IRCMOS、CMT、X線センサ等)
−「冷間」ハイブリッド形成された感温性のマトリックス
−機械的応力に敏感なマトリックス
が挙げられる。
S 表面積
S’ 表面積
Fhyb 挿入力
D フォトリソグラフィ分解能、開孔の最小直径、インサートの外径
e 中空インサートの厚さ
F 挿入力
F’ 挿入力
H インサートの高さ
Claims (12)
- 別の構成部品と電気的に接続されるべき導電性中空インサート(1)を備えた接続構成部品(2)の製造方法であって、
前記構成部品(2)の表面上に樹脂の層を堆積させるステップと、
前記層内に前記インサート(1)の形状に適合する開口を作製するステップと、
前記層の表面に沿って前記インサート(1)を構成する材料または複数の材料を堆積させるステップと、
前記層の上部平面上の前記材料または複数の材料を排除するステップと、
前記層を除去するステップとを含む方法。 - 前記樹脂層における前記開口をフォトリソグラフィによって作製することを特徴とする請求項1に記載の接続構成部品の製造方法。
- 前記インサート(1)を構成する前記材料または複数の材料を、薄層堆積法を用いて前記層の表面に沿って堆積することを特徴とする請求項1または2に記載の接続構成部品の製造方法。
- 前記材料または複数の材料を、エッチングによって前記層の上部平面で排除することを特徴とする請求項1から3のいずれか一項に記載の接続構成部品の製造方法。
- 前記層を、デラッカリングによって除去することを特徴とする請求項1から4のいずれか一項に記載の接続構成部品の製造方法。
- 前記インサート(1)を構成する前記材料または複数の材料を堆積する間、あるいはそれを排除する間に、面取りされた自由端部を有するインサートを作製するように、前記構成部品(2)を画定された向きに傾斜することを特徴とする請求項1から5のいずれか一項に記載の接続構成部品の製造方法。
- 引き続くステップにおいて、非酸化性材料、有利には金の層を、前記インサート(1)の表面上に堆積することを特徴とする請求項1から6のいずれか一項に記載の接続構成部品の製造方法。
- 請求項1から7のいずれか一項に記載の方法を使用して得ることが可能な導電性中空インサート(1)を備えた接続構成部品(2)であって、前記インサート(1)が、その底部で前記構成部品(2)の表面上に支持される、前記インサートの本体と同じ組成を有するマウントによって閉じられていることを特徴とする接続構成部品(2)。
- 前記インサート(1)が、環状の断面、特に円形もしくは楕円形、または平行6面体、特に正方形もしくは方形であることを特徴とする請求項8に記載の接続構成部品(2)。
- 前記インサート(1)が、直径DおよびDよりはるかに小さい厚さeを有することを特徴とする請求項8または9に記載の接続構成部品。
- 前記インサート(1)を構成する前記材料または複数の材料が、Cu、Ti、W、WSi、Cr、Ni、Pd、Pt、WN、TiNから成る群から選択されることを特徴とする請求項8から10のいずれか一項に記載の接続構成部品。
- 請求項8から11のいずれか一項に記載の構成部品と接続バンプが設けられた第2の構成部品との間のハイブリッド形成方法であって、
有利には周囲温度で実行される、前記バンプ内の前記インサート(1)の位置合わせおよび部分的挿入のステップと、
有利には真空下で実行される最終的挿入のステップとを含むハイブリッド形成方法。
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FR0851142A FR2928033B1 (fr) | 2008-02-22 | 2008-02-22 | Composant de connexion muni d'inserts creux. |
PCT/FR2009/000186 WO2009115686A2 (fr) | 2008-02-22 | 2009-02-19 | Composant de connexion muni d'inserts creux et son procede de realisation |
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EP (2) | EP2255383B1 (ja) |
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FR2949171B1 (fr) | 2009-08-13 | 2011-08-26 | Commissariat Energie Atomique | Procede d'assemblage de deux composants electroniques |
FR2967296B1 (fr) | 2010-11-05 | 2018-05-25 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Elements de connexion pour l'hybridation de circuits electroniques |
FR2971081B1 (fr) * | 2011-02-02 | 2013-01-25 | Commissariat Energie Atomique | Procédé de fabrication de deux substrats relies par au moins une connexion mécanique et électriquement conductrice obtenue |
FR2972569A1 (fr) * | 2011-03-10 | 2012-09-14 | Commissariat Energie Atomique | Composant de connexion muni d'inserts creux |
FR2977370B1 (fr) | 2011-06-30 | 2013-11-22 | Commissariat Energie Atomique | Composant de connexion muni d'inserts creux |
FR2994331B1 (fr) | 2012-07-31 | 2014-09-12 | Commissariat Energie Atomique | Procede d'assemblage de deux composants electroniques entre eux, de type flip-chip |
FR2996053A1 (fr) * | 2012-09-27 | 2014-03-28 | Commissariat Energie Atomique | Procede d'assemblage de deux composants electroniques, de type flip-chip, assemblage obtenu selon le procede. |
FR3013147B1 (fr) * | 2013-11-08 | 2017-05-12 | Commissariat Energie Atomique | Procede de fabrication d'un organe electriquement conducteur pour composant electronique presentant une extremite munie d'une cavite |
FR3044467B1 (fr) | 2015-11-26 | 2018-08-10 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Dalle lumineuse et procede de fabrication d'une telle dalle lumineuse |
FR3047604B1 (fr) | 2016-02-04 | 2018-02-02 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Dispositif electronique hybride protege contre l'humidite et procede de protection contre l'humidite d'un dispositif electronique hybride |
FR3055166B1 (fr) * | 2016-08-18 | 2020-12-25 | Commissariat Energie Atomique | Procede de connection intercomposants a densite optimisee |
TWI636533B (zh) | 2017-09-15 | 2018-09-21 | Industrial Technology Research Institute | 半導體封裝結構 |
FR3082663B1 (fr) | 2018-06-14 | 2022-01-07 | Aledia | Dispositif optoelectronique |
FR3082998B1 (fr) | 2018-06-25 | 2021-01-08 | Commissariat Energie Atomique | Dispositif et procedes pour le report de puces d'un substrat source vers un substrat destination |
FR3091411B1 (fr) | 2018-12-28 | 2021-01-29 | Commissariat Energie Atomique | Procédés de fabrication optimisés d’une structure destinée à être assemblée par hybridation et d’un dispositif comprenant une telle structure |
FR3105877A1 (fr) | 2019-12-30 | 2021-07-02 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procédé de connexion autoalignée d’une structure à un support, dispositif obtenu à partir d’un tel procédé, et les structure et support mis en œuvre par un tel procédé |
FR3116648B1 (fr) | 2020-11-20 | 2022-10-28 | Commissariat Energie Atomique | Dispositif et procédé d'assemblage fluidique de micropuces sur un substrat |
FR3117265B1 (fr) | 2020-12-03 | 2023-01-06 | Commissariat Energie Atomique | Outil de transfert collectif de micropuces d'un substrat source vers un substrat destination |
FR3119047A1 (fr) * | 2021-01-21 | 2022-07-22 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Structure de micro-insert a armature en silicium |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63232450A (ja) * | 1987-03-20 | 1988-09-28 | Fujitsu Ltd | 半導体装置製造方法 |
JPH07249632A (ja) * | 1994-03-09 | 1995-09-26 | Nec Corp | 電子部品の接続構造およびその製造方法 |
JP2005079070A (ja) * | 2003-09-04 | 2005-03-24 | Canon Inc | 基板間電極接合方法及び構造体 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01226160A (ja) * | 1988-03-07 | 1989-09-08 | Nippon Telegr & Teleph Corp <Ntt> | 電子部品接続用の端子装置および端子の製造方法 |
US4937653A (en) * | 1988-07-21 | 1990-06-26 | American Telephone And Telegraph Company | Semiconductor integrated circuit chip-to-chip interconnection scheme |
US5457879A (en) * | 1994-01-04 | 1995-10-17 | Motorola, Inc. | Method of shaping inter-substrate plug and receptacles interconnects |
WO1996008056A1 (en) * | 1994-09-06 | 1996-03-14 | The Whitaker Corporation | Ball grid array socket |
US6179198B1 (en) | 1996-09-18 | 2001-01-30 | Matsushita Electric Industrial Co., Ltd. | Method of soldering bumped work by partially penetrating the oxide film covering the solder bumps |
JPH10270498A (ja) * | 1997-03-27 | 1998-10-09 | Toshiba Corp | 電子装置の製造方法 |
US6725536B1 (en) * | 1999-03-10 | 2004-04-27 | Micron Technology, Inc. | Methods for the fabrication of electrical connectors |
US6352436B1 (en) * | 2000-06-29 | 2002-03-05 | Teradyne, Inc. | Self retained pressure connection |
US6388322B1 (en) * | 2001-01-17 | 2002-05-14 | Aralight, Inc. | Article comprising a mechanically compliant bump |
US7015590B2 (en) * | 2003-01-10 | 2006-03-21 | Samsung Electronics Co., Ltd. | Reinforced solder bump structure and method for forming a reinforced solder bump |
FR2876243B1 (fr) | 2004-10-04 | 2007-01-26 | Commissariat Energie Atomique | Composant a protuberances conductrices ductiles enterrees et procede de connexion electrique entre ce composant et un composant muni de pointes conductrices dures |
US7442045B1 (en) * | 2007-08-17 | 2008-10-28 | Centipede Systems, Inc. | Miniature electrical ball and tube socket with self-capturing multiple-contact-point coupling |
FR2936359B1 (fr) * | 2008-09-25 | 2010-10-22 | Commissariat Energie Atomique | Connexion par emboitement de deux inserts soudes. |
-
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63232450A (ja) * | 1987-03-20 | 1988-09-28 | Fujitsu Ltd | 半導体装置製造方法 |
JPH07249632A (ja) * | 1994-03-09 | 1995-09-26 | Nec Corp | 電子部品の接続構造およびその製造方法 |
JP2005079070A (ja) * | 2003-09-04 | 2005-03-24 | Canon Inc | 基板間電極接合方法及び構造体 |
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JP5619236B2 (ja) | 2014-11-05 |
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EP2255383B1 (fr) | 2019-01-02 |
FR2928033B1 (fr) | 2010-07-30 |
JP5606928B2 (ja) | 2014-10-15 |
WO2009115686A3 (fr) | 2010-01-07 |
US20110094789A1 (en) | 2011-04-28 |
FR2928033A1 (fr) | 2009-08-28 |
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