FR3055166B1 - Procede de connection intercomposants a densite optimisee - Google Patents
Procede de connection intercomposants a densite optimisee Download PDFInfo
- Publication number
- FR3055166B1 FR3055166B1 FR1601237A FR1601237A FR3055166B1 FR 3055166 B1 FR3055166 B1 FR 3055166B1 FR 1601237 A FR1601237 A FR 1601237A FR 1601237 A FR1601237 A FR 1601237A FR 3055166 B1 FR3055166 B1 FR 3055166B1
- Authority
- FR
- France
- Prior art keywords
- component
- intercomponent
- connection
- connection process
- optimized density
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 238000000034 method Methods 0.000 title abstract 3
- 230000004888 barrier function Effects 0.000 abstract 3
- 238000009396 hybridization Methods 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
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- General Physics & Mathematics (AREA)
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- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
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Abstract
L'invention concerne un procédé de connexion électrique par hybridation d'un premier composant (100) à un deuxième composant (200). Le procédé comportant les étapes suivantes : formation de plots en matériau ductile (111, 121) en contact respectif des zones de connexion (110, 120) du premier composant (100) ; formation d'inserts (211, 221) en matériau conducteur en contact de des zones de connexion (210, 220) du deuxième composant (200) ; formation de barrières d'hybridation (212, 222) disposées entre les inserts (211, 221) et isolées électriquement l'une de l'autre, lesdites première et deuxième barrière d'hybridation (212, 222) pour faire office de barrière en contenant la déformation des plots en matériau ductile (111, 121) lors de la connexion des zones de connexion (210, 220) du premier composant (100) avec celles du deuxième composant (200). L'invention concerne en outre un ensemble (1) de deux composants (100, 200) connectés
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1601237A FR3055166B1 (fr) | 2016-08-18 | 2016-08-18 | Procede de connection intercomposants a densite optimisee |
US16/325,095 US20210280628A1 (en) | 2016-08-18 | 2017-08-18 | Method for connecting cross-components at optimised density |
CN201780058209.5A CN109791920A (zh) | 2016-08-18 | 2017-08-18 | 以最佳密度连接交叉部件的方法 |
PCT/FR2017/052247 WO2018033689A1 (fr) | 2016-08-18 | 2017-08-18 | Procédé de connection intercomposants à densité optimisée |
EP17764883.9A EP3501042A1 (fr) | 2016-08-18 | 2017-08-18 | Procédé de connection intercomposants à densité optimisée |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1601237A FR3055166B1 (fr) | 2016-08-18 | 2016-08-18 | Procede de connection intercomposants a densite optimisee |
FR1601237 | 2016-08-18 |
Publications (2)
Publication Number | Publication Date |
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FR3055166A1 FR3055166A1 (fr) | 2018-02-23 |
FR3055166B1 true FR3055166B1 (fr) | 2020-12-25 |
Family
ID=57539297
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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FR1601237A Expired - Fee Related FR3055166B1 (fr) | 2016-08-18 | 2016-08-18 | Procede de connection intercomposants a densite optimisee |
Country Status (5)
Country | Link |
---|---|
US (1) | US20210280628A1 (fr) |
EP (1) | EP3501042A1 (fr) |
CN (1) | CN109791920A (fr) |
FR (1) | FR3055166B1 (fr) |
WO (1) | WO2018033689A1 (fr) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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EP3604792B1 (fr) | 2018-08-03 | 2021-11-10 | GE Renewable Technologies | Bouchon preformé avec profil hydrodynamique pour installation entre les aubes d'une turbine hydraulique |
FR3091411B1 (fr) * | 2018-12-28 | 2021-01-29 | Commissariat Energie Atomique | Procédés de fabrication optimisés d’une structure destinée à être assemblée par hybridation et d’un dispositif comprenant une telle structure |
FR3113982A1 (fr) | 2020-09-10 | 2022-03-11 | Commissariat à l'Energie Atomique et aux Energies Alternatives | procédé d’assemblage par hybridation de deux composants microélectroniques |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH06164185A (ja) * | 1992-11-20 | 1994-06-10 | Tatsuta Electric Wire & Cable Co Ltd | ハイブリッドic |
JP2005197488A (ja) * | 2004-01-08 | 2005-07-21 | Sony Corp | 突起電極及びボンディングキャピラリ並びに半導体チップ |
JP2006100552A (ja) * | 2004-09-29 | 2006-04-13 | Rohm Co Ltd | 配線基板および半導体装置 |
FR2876243B1 (fr) * | 2004-10-04 | 2007-01-26 | Commissariat Energie Atomique | Composant a protuberances conductrices ductiles enterrees et procede de connexion electrique entre ce composant et un composant muni de pointes conductrices dures |
JP5076482B2 (ja) * | 2006-01-20 | 2012-11-21 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
US8218918B2 (en) | 2007-03-26 | 2012-07-10 | Trex Enterprises Corp | Optical fiber switch with movable lens |
KR20090038624A (ko) * | 2007-10-16 | 2009-04-21 | 주식회사 동부하이텍 | 배리어 금속막 형성 방법 |
FR2928033B1 (fr) * | 2008-02-22 | 2010-07-30 | Commissariat Energie Atomique | Composant de connexion muni d'inserts creux. |
TWI455263B (zh) * | 2009-02-16 | 2014-10-01 | Ind Tech Res Inst | 晶片封裝結構及晶片封裝方法 |
JP5786273B2 (ja) * | 2009-12-28 | 2015-09-30 | オムロン株式会社 | 赤外線センサ及び赤外線センサモジュール |
US8546921B2 (en) * | 2010-08-24 | 2013-10-01 | Qualcomm Incorporated | Hybrid multilayer substrate |
FR2977370B1 (fr) * | 2011-06-30 | 2013-11-22 | Commissariat Energie Atomique | Composant de connexion muni d'inserts creux |
DE102011081641B4 (de) * | 2011-08-26 | 2014-11-20 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Sensor und Verfahren zum Herstellen eines Sensors |
CN103931057B (zh) * | 2011-10-17 | 2017-05-17 | 安费诺有限公司 | 具有混合屏蔽件的电连接器 |
DE102012216618A1 (de) * | 2012-09-18 | 2014-03-20 | Robert Bosch Gmbh | Anordnung von mindestens zwei Wafern zum Detektieren von elektromagnetischer Strahlung und Verfahren zum Herstellen der Anordnung |
US9437565B2 (en) * | 2014-12-30 | 2016-09-06 | Advanced Seminconductor Engineering, Inc. | Semiconductor substrate and semiconductor package structure having the same |
US9540228B2 (en) * | 2015-01-29 | 2017-01-10 | Invensense, Inc. | MEMS-CMOS device that minimizes outgassing and methods of manufacture |
-
2016
- 2016-08-18 FR FR1601237A patent/FR3055166B1/fr not_active Expired - Fee Related
-
2017
- 2017-08-18 EP EP17764883.9A patent/EP3501042A1/fr not_active Withdrawn
- 2017-08-18 WO PCT/FR2017/052247 patent/WO2018033689A1/fr unknown
- 2017-08-18 US US16/325,095 patent/US20210280628A1/en not_active Abandoned
- 2017-08-18 CN CN201780058209.5A patent/CN109791920A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
FR3055166A1 (fr) | 2018-02-23 |
CN109791920A (zh) | 2019-05-21 |
EP3501042A1 (fr) | 2019-06-26 |
WO2018033689A1 (fr) | 2018-02-22 |
US20210280628A1 (en) | 2021-09-09 |
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