JP2011515024A - 半導体基板接続ビア - Google Patents
半導体基板接続ビア Download PDFInfo
- Publication number
- JP2011515024A JP2011515024A JP2010548658A JP2010548658A JP2011515024A JP 2011515024 A JP2011515024 A JP 2011515024A JP 2010548658 A JP2010548658 A JP 2010548658A JP 2010548658 A JP2010548658 A JP 2010548658A JP 2011515024 A JP2011515024 A JP 2011515024A
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- layer
- conductive layer
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- silicate glass
- conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 239000000758 substrate Substances 0.000 title claims abstract description 59
- 239000004065 semiconductor Substances 0.000 title claims abstract description 9
- 239000005368 silicate glass Substances 0.000 claims abstract description 21
- 239000012530 fluid Substances 0.000 claims description 29
- 238000005530 etching Methods 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000000059 patterning Methods 0.000 claims description 6
- 229920005591 polysilicon Polymers 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 238000002161 passivation Methods 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- 239000004020 conductor Substances 0.000 abstract description 7
- 239000010410 layer Substances 0.000 description 261
- 238000010304 firing Methods 0.000 description 28
- 239000000463 material Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 239000003989 dielectric material Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000012993 chemical processing Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 description 1
- RVSGESPTHDDNTH-UHFFFAOYSA-N alumane;tantalum Chemical compound [AlH3].[Ta] RVSGESPTHDDNTH-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007496 glass forming Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14016—Structure of bubble jet print heads
- B41J2/14088—Structure of heating means
- B41J2/14112—Resistive element
- B41J2/14129—Layer structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76804—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics by forming tapered via holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76805—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics the opening being a via or contact hole penetrating the underlying conductor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2002/14387—Front shooter
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2202/00—Embodiments of or processes related to ink-jet or thermal heads
- B41J2202/01—Embodiments of or processes related to ink-jet heads
- B41J2202/18—Electrical connection established using vias
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Thin Film Transistor (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Wire Bonding (AREA)
Abstract
【選択図】図2
Description
Claims (19)
- 半導体基板(41)と、
前記基板(41)上の第1導電層(104)と、
前記第1導電層(104)上のシリケートガラス層(106)であって、前記シリケートガラス層(106)と前記第1導電層(104)は隣接する縁部を、前記基板(41)まで延在するビア(164)に沿って有する、前記シリケートガラス層(106)と、
前記シリケートガラス層(106)上の第2導電層(110)と、
前記第2導電層(110)上の誘電層(112)と、
前記誘電層上の第3導電層(114/116)であって、前記第2導電層(110)と電気的に接触しており、前記ビア(164)を通り延在して前記基板(41)と電気的に接触する前記第3導電層(114/116)と、
を備えることを特徴とする、装置。 - 前記半導体基板(41)にはシリコンを含むことを特徴とする、請求項1に記載の装置。
- 前記第1導電層(104)にはポリシリコンを含むことを特徴とする、請求項1に記載の装置。
- 前記縁部の形状角度を70度以下とすることを特徴とする、請求項1に記載の装置。
- 前記シリケートガラス層(106)には、前記第2導電層(110)下にあり前記基板(41)から第1距離だけ離間する第1表面と、前記第3導電層(114/116)下にあり前記基板(41)からより短い第2距離だけ離間する第2表面と、を有することを特徴とする、請求項1に記載の装置。
- 前記第1導電層(104)と前記シリコン層との間に第2誘電層(112)を更に備え、前記ビア(164)は前記第2誘電層(112)を通り延在すること、を特徴とする請求項1に記載の装置。
- 第2導電層(110)にはタンタルを含むことを特徴とする、請求項1に記載の装置。
- 前記基板(41)の一部分をドープし、この部分で少なくとも1つのトランジスタを形成することを特徴とする、請求項1に記載の装置。
- 前記第3導電層(114/116)には、抵抗部分及び前記抵抗部分上の導電部分を含むことを特徴とする、請求項1に記載の装置。
- 前記導電部分を通る前記抵抗部分への開口部(156)と、
前記開口部(156)に対向する流体キャビティ(28)と、
前記流体キャビティ(28)と連通するノズル開口(150)と、
を更に備えることを特徴とする、請求項9に記載の装置。 - 前記誘電層(112)で、前記ビア(164)と近接する前記第2導電層(110)の縁部を被覆することを特徴とする、請求項1に記載の装置。
- 前記第3導電層(114/116)により、前記ビア(164)に近接する前記第2導電層(110)の縁部を被覆することを特徴とする、請求項1に記載の装置。
- 前記第2導電層(110)には、前記ビア周囲に、前記シリケートガラス層(106)の縁部から外側に離間する縁部を有することを特徴とする、請求項1に記載の装置。
- 前記第2導電層(110)には、前記ビア(164)周囲に、前記第1導電層(104)の縁部から外側に離間する縁部を有することを特徴とする、請求項1に記載の装置。
- 前記第2導電層(110)には、前記ビア(164)周囲に、約9平方ミクロン以下の幅を持つ縁部を有することを特徴とする、請求項1に記載の装置。
- 第1導電層(104)を半導体基板(41)上に形成すること、
前記第1導電層(104)上にシリケートガラス層(106)をパターニングすること、
前記第1導電層(104)を通るビアを、前記パターニングしたシリケートガラス層(106)をハードマスクとして使用して、エッチングすること、
を含むことを特徴とする、方法。 - 前記シリケートガラス層(106)上に第2導電層(110)をパターニングすること、を更に含むことを特徴とする、請求項16に記載の方法。
- 前記導電層(110)をオーバーエッチングして、前記シリケートガラス層(106)の一部分を前記ビア(164)周囲でエッチングすること、を更に含むことを特徴とする、請求項17に記載の方法。
- 前記第2導電層(110)上にパッシベーション層(112)をパターニングすることを更に含み、前記パターニングには、前記パッシベーション層(112)をオーバーエッチングして、前記シリケートガラス層(106)を前記ビア(164)周囲でエッチングすることを特徴とする、請求項16に記載の方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US2008/055395 WO2009108201A1 (en) | 2008-02-28 | 2008-02-28 | Semiconductor substrate contact via |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011515024A true JP2011515024A (ja) | 2011-05-12 |
JP5400806B2 JP5400806B2 (ja) | 2014-01-29 |
Family
ID=41016390
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010548658A Expired - Fee Related JP5400806B2 (ja) | 2008-02-28 | 2008-02-28 | 半導体基板接続ビア |
Country Status (9)
Country | Link |
---|---|
US (1) | US8476742B2 (ja) |
EP (1) | EP2248156B1 (ja) |
JP (1) | JP5400806B2 (ja) |
CN (1) | CN101960565B (ja) |
AR (1) | AR070710A1 (ja) |
CL (1) | CL2009000469A1 (ja) |
HK (1) | HK1149118A1 (ja) |
TW (1) | TWI493708B (ja) |
WO (1) | WO2009108201A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5923326B2 (ja) * | 2012-02-08 | 2016-05-24 | 株式会社ジャパンディスプレイ | 回路基板およびその製造方法、ならびに電気光学装置 |
US9469109B2 (en) | 2014-11-03 | 2016-10-18 | Stmicroelectronics S.R.L. | Microfluid delivery device and method for manufacturing the same |
KR102659138B1 (ko) | 2016-10-19 | 2024-04-22 | 시크파 홀딩 에스에이 | 열 잉크젯 프린트헤드를 형성하는 방법, 열 잉크젯 프린트헤드, 및 반도체 웨이퍼 |
JP2021505449A (ja) | 2017-12-08 | 2021-02-18 | ヒューレット−パッカード デベロップメント カンパニー エル.ピー.Hewlett‐Packard Development Company, L.P. | 導電性接地構造間のギャップ |
CN114684777B (zh) * | 2020-12-30 | 2024-06-11 | 上海新微技术研发中心有限公司 | Mems热泡打印头加热结构的制作方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0240935A (ja) * | 1988-07-30 | 1990-02-09 | Sony Corp | 多層配線構造 |
JPH05243397A (ja) * | 1992-03-03 | 1993-09-21 | Fujitsu Ltd | 半導体装置の製造方法 |
Family Cites Families (13)
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US4358891A (en) | 1979-06-22 | 1982-11-16 | Burroughs Corporation | Method of forming a metal semiconductor field effect transistor |
US4363830A (en) * | 1981-06-22 | 1982-12-14 | Rca Corporation | Method of forming tapered contact holes for integrated circuit devices |
DE3684298D1 (de) | 1986-01-09 | 1992-04-16 | Ibm | Verfahren zur herstellung eines kontakts unter verwendung der erweichung zweier glasschichten. |
US5262352A (en) * | 1992-08-31 | 1993-11-16 | Motorola, Inc. | Method for forming an interconnection structure for conductive layers |
US5963840A (en) | 1996-11-13 | 1999-10-05 | Applied Materials, Inc. | Methods for depositing premetal dielectric layer at sub-atmospheric and high temperature conditions |
US5895264A (en) * | 1997-07-30 | 1999-04-20 | Chartered Semiconductor Manufacturing Ltd. | Method for forming stacked polysilicon |
US6764958B1 (en) | 2000-07-28 | 2004-07-20 | Applied Materials Inc. | Method of depositing dielectric films |
US6883894B2 (en) * | 2001-03-19 | 2005-04-26 | Hewlett-Packard Development Company, L.P. | Printhead with looped gate transistor structures |
TW502379B (en) * | 2001-10-26 | 2002-09-11 | Ind Tech Res Inst | Drive transistor structure of ink-jet printing head chip and its manufacturing method |
US6902256B2 (en) * | 2003-07-16 | 2005-06-07 | Lexmark International, Inc. | Ink jet printheads |
US7150516B2 (en) * | 2004-09-28 | 2006-12-19 | Hewlett-Packard Development Company, L.P. | Integrated circuit and method for manufacturing |
TWI252813B (en) * | 2004-11-10 | 2006-04-11 | Benq Corp | Fluid injector device with sensors and method of manufacturing the same |
US7829262B2 (en) | 2005-08-31 | 2010-11-09 | Micron Technology, Inc. | Method of forming pitch multipled contacts |
-
2008
- 2008-02-28 CN CN2008801276134A patent/CN101960565B/zh not_active Expired - Fee Related
- 2008-02-28 EP EP08743614.3A patent/EP2248156B1/en not_active Not-in-force
- 2008-02-28 US US12/812,776 patent/US8476742B2/en active Active
- 2008-02-28 JP JP2010548658A patent/JP5400806B2/ja not_active Expired - Fee Related
- 2008-02-28 WO PCT/US2008/055395 patent/WO2009108201A1/en active Application Filing
-
2009
- 2009-02-10 TW TW098104181A patent/TWI493708B/zh not_active IP Right Cessation
- 2009-02-27 CL CL2009000469A patent/CL2009000469A1/es unknown
- 2009-02-27 AR ARP090100701A patent/AR070710A1/es unknown
-
2011
- 2011-03-29 HK HK11103209.8A patent/HK1149118A1/xx not_active IP Right Cessation
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0240935A (ja) * | 1988-07-30 | 1990-02-09 | Sony Corp | 多層配線構造 |
JPH05243397A (ja) * | 1992-03-03 | 1993-09-21 | Fujitsu Ltd | 半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
EP2248156B1 (en) | 2018-09-05 |
HK1149118A1 (en) | 2011-09-23 |
CL2009000469A1 (es) | 2009-08-07 |
EP2248156A1 (en) | 2010-11-10 |
CN101960565B (zh) | 2012-09-05 |
CN101960565A (zh) | 2011-01-26 |
US8476742B2 (en) | 2013-07-02 |
WO2009108201A1 (en) | 2009-09-03 |
AR070710A1 (es) | 2010-04-28 |
JP5400806B2 (ja) | 2014-01-29 |
EP2248156A4 (en) | 2014-09-03 |
US20100320608A1 (en) | 2010-12-23 |
TW200941730A (en) | 2009-10-01 |
TWI493708B (zh) | 2015-07-21 |
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