JP2011507273A - 半導体発光デバイス及びその作製方法 - Google Patents

半導体発光デバイス及びその作製方法 Download PDF

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Publication number
JP2011507273A
JP2011507273A JP2010538014A JP2010538014A JP2011507273A JP 2011507273 A JP2011507273 A JP 2011507273A JP 2010538014 A JP2010538014 A JP 2010538014A JP 2010538014 A JP2010538014 A JP 2010538014A JP 2011507273 A JP2011507273 A JP 2011507273A
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Japan
Prior art keywords
semiconductor structure
light
potential well
energy
substrate
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Japanese (ja)
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JP2011507273A5 (enExample
Inventor
エー． ハーセ，マイケル
ジェイ． ミラー，トーマス
スン，シャオクア
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3M Innovative Properties Co
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3M Innovative Properties Co
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Publication of JP2011507273A publication Critical patent/JP2011507273A/ja
Publication of JP2011507273A5 publication Critical patent/JP2011507273A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/826—Materials of the light-emitting regions comprising only Group IV materials
JP2010538014A 2007-12-10 2008-11-07 半導体発光デバイス及びその作製方法 Pending JP2011507273A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US1260807P 2007-12-10 2007-12-10
PCT/US2008/082778 WO2009075973A2 (en) 2007-12-10 2008-11-07 Semiconductor light emitting device and method of making same

Publications (2)

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JP2011507273A true JP2011507273A (ja) 2011-03-03
JP2011507273A5 JP2011507273A5 (enExample) 2011-12-22

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JP2010538014A Pending JP2011507273A (ja) 2007-12-10 2008-11-07 半導体発光デバイス及びその作製方法

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US (1) US20110121319A1 (enExample)
EP (1) EP2232590A4 (enExample)
JP (1) JP2011507273A (enExample)
KR (1) KR20100099254A (enExample)
CN (1) CN101939855B (enExample)
WO (1) WO2009075973A2 (enExample)

Cited By (2)

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WO2018163713A1 (ja) * 2017-03-07 2018-09-13 信越半導体株式会社 発光素子及びその製造方法
JP2019522894A (ja) * 2016-05-13 2019-08-15 コミサリア ア エナジー アトミック エ オックス エナジーズ オルタネティヴ 複数の窒化ガリウムダイオードを備えた光電子デバイスを製造する方法

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EP2332223A1 (en) * 2008-09-04 2011-06-15 3M Innovative Properties Company I i-vi mqw vcsel on a heat sink optically pumped by a gan ld
WO2010027580A2 (en) * 2008-09-04 2010-03-11 3M Innovative Properties Company Light source having light blocking components
WO2010027581A1 (en) * 2008-09-04 2010-03-11 3M Innovative Properties Company Monochromatic light source
EP2380217A2 (en) 2008-12-24 2011-10-26 3M Innovative Properties Company Method of making double-sided wavelength converter and light generating device using same
WO2010074987A2 (en) 2008-12-24 2010-07-01 3M Innovative Properties Company Light generating device having double-sided wavelength converter
CN102668044A (zh) * 2009-11-18 2012-09-12 3M创新有限公司 用于ii-vi族半导体的新型湿蚀刻剂及方法
EP2521189A3 (en) * 2011-04-29 2013-05-01 Institute of Nuclear Energy Research Atomic Energy Council Lift-off structure for substrate of a photoelectric device and the method thereof
US9331252B2 (en) 2011-08-23 2016-05-03 Micron Technology, Inc. Wavelength converters, including polarization-enhanced carrier capture converters, for solid state lighting devices, and associated systems and methods
US8975614B2 (en) * 2011-08-23 2015-03-10 Micron Technology, Inc. Wavelength converters for solid state lighting devices, and associated systems and methods
KR20140111876A (ko) 2013-03-12 2014-09-22 삼성디스플레이 주식회사 표시 장치
CN103579503A (zh) * 2013-11-14 2014-02-12 吉林大学 一种利用光交联聚合物对有机电子器件进行薄膜封装的方法
CN105849915B (zh) * 2014-01-06 2019-04-02 亮锐控股有限公司 具有成形衬底的半导体发光器件和制造所述器件的方法
FR3019380B1 (fr) * 2014-04-01 2017-09-01 Centre Nat Rech Scient Pixel semiconducteur, matrice de tels pixels, structure semiconductrice pour la realisation de tels pixels et leurs procedes de fabrication
CN104810444B (zh) * 2015-03-04 2018-01-09 华灿光电(苏州）有限公司 发光二极管外延片及其制备方法、发光二极管芯片制备及衬底回收方法
US9847454B2 (en) * 2015-10-02 2017-12-19 Epistar Corporation Light-emitting device
US20190123035A1 (en) * 2017-10-19 2019-04-25 Samsung Electronics Co., Ltd. Method of performing die-based heterogeneous integration and devices including integrated dies

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JPH0936486A (ja) * 1995-07-18 1997-02-07 Oki Electric Ind Co Ltd 半導体発光素子の製造方法
JPH1093141A (ja) * 1996-09-13 1998-04-10 Dowa Mining Co Ltd 化合物半導体素子およびその製造方法
JPH11274565A (ja) * 1998-03-25 1999-10-08 Nec Corp ＩｎＰ基板上ＩＩ−ＶＩ族化合物半導体薄膜
JP2000012981A (ja) * 1998-06-19 2000-01-14 Canon Inc 面型半導体光デバイスおよびその作製方法
JP2002118327A (ja) * 2000-10-06 2002-04-19 Furukawa Electric Co Ltd:The 化合物半導体装置の製造方法
WO2006062588A1 (en) * 2004-12-09 2006-06-15 3M Innovative Properties Company Adapting short-wavelength led's for polychromatic, broadband, or 'white' emission

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DE102005047152A1 (de) * 2005-09-30 2007-04-12 Osram Opto Semiconductors Gmbh Epitaxiesubstrat, Verfahren zu seiner Herstellung und Verfahren zur Herstellung eines Halbleiterchips
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US7952110B2 (en) * 2006-06-12 2011-05-31 3M Innovative Properties Company LED device with re-emitting semiconductor construction and converging optical element
US8188494B2 (en) * 2006-06-28 2012-05-29 Hewlett-Packard Development Company, L.P. Utilizing nanowire for generating white light
US9018619B2 (en) * 2006-10-09 2015-04-28 Cree, Inc. Quantum wells for light conversion
US8578427B2 (en) * 2008-03-04 2013-11-05 The Directv Group, Inc. Method for swapping channel assignments in a broadcast system

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0936486A (ja) * 1995-07-18 1997-02-07 Oki Electric Ind Co Ltd 半導体発光素子の製造方法
JPH1093141A (ja) * 1996-09-13 1998-04-10 Dowa Mining Co Ltd 化合物半導体素子およびその製造方法
JPH11274565A (ja) * 1998-03-25 1999-10-08 Nec Corp ＩｎＰ基板上ＩＩ−ＶＩ族化合物半導体薄膜
JP2000012981A (ja) * 1998-06-19 2000-01-14 Canon Inc 面型半導体光デバイスおよびその作製方法
JP2002118327A (ja) * 2000-10-06 2002-04-19 Furukawa Electric Co Ltd:The 化合物半導体装置の製造方法
WO2006062588A1 (en) * 2004-12-09 2006-06-15 3M Innovative Properties Company Adapting short-wavelength led's for polychromatic, broadband, or 'white' emission

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019522894A (ja) * 2016-05-13 2019-08-15 コミサリア ア エナジー アトミック エ オックス エナジーズ オルタネティヴ 複数の窒化ガリウムダイオードを備えた光電子デバイスを製造する方法
WO2018163713A1 (ja) * 2017-03-07 2018-09-13 信越半導体株式会社 発光素子及びその製造方法
JP2018148074A (ja) * 2017-03-07 2018-09-20 信越半導体株式会社 発光素子及びその製造方法

Also Published As

Publication number Publication date
KR20100099254A (ko) 2010-09-10
EP2232590A2 (en) 2010-09-29
CN101939855A (zh) 2011-01-05
CN101939855B (zh) 2013-10-30
EP2232590A4 (en) 2013-12-25
WO2009075973A2 (en) 2009-06-18
WO2009075973A3 (en) 2009-08-13
US20110121319A1 (en) 2011-05-26

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