JP2011507273A5 - - Google Patents

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Publication number
JP2011507273A5
JP2011507273A5 JP2010538014A JP2010538014A JP2011507273A5 JP 2011507273 A5 JP2011507273 A5 JP 2011507273A5 JP 2010538014 A JP2010538014 A JP 2010538014A JP 2010538014 A JP2010538014 A JP 2010538014A JP 2011507273 A5 JP2011507273 A5 JP 2011507273A5
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JP
Japan
Prior art keywords
light
etch stop
photon energy
semiconductor structure
light emitting
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Pending
Application number
JP2010538014A
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English (en)
Japanese (ja)
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JP2011507273A (ja
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Publication date
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Priority claimed from PCT/US2008/082778 external-priority patent/WO2009075973A2/en
Publication of JP2011507273A publication Critical patent/JP2011507273A/ja
Publication of JP2011507273A5 publication Critical patent/JP2011507273A5/ja
Pending legal-status Critical Current

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JP2010538014A 2007-12-10 2008-11-07 半導体発光デバイス及びその作製方法 Pending JP2011507273A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US1260807P 2007-12-10 2007-12-10
PCT/US2008/082778 WO2009075973A2 (en) 2007-12-10 2008-11-07 Semiconductor light emitting device and method of making same

Publications (2)

Publication Number Publication Date
JP2011507273A JP2011507273A (ja) 2011-03-03
JP2011507273A5 true JP2011507273A5 (enExample) 2011-12-22

Family

ID=40756058

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010538014A Pending JP2011507273A (ja) 2007-12-10 2008-11-07 半導体発光デバイス及びその作製方法

Country Status (6)

Country Link
US (1) US20110121319A1 (enExample)
EP (1) EP2232590A4 (enExample)
JP (1) JP2011507273A (enExample)
KR (1) KR20100099254A (enExample)
CN (1) CN101939855B (enExample)
WO (1) WO2009075973A2 (enExample)

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JP6760141B2 (ja) * 2017-03-07 2020-09-23 信越半導体株式会社 発光素子及びその製造方法
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