JP2011507273A5 - - Google Patents

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Publication number
JP2011507273A5
JP2011507273A5 JP2010538014A JP2010538014A JP2011507273A5 JP 2011507273 A5 JP2011507273 A5 JP 2011507273A5 JP 2010538014 A JP2010538014 A JP 2010538014A JP 2010538014 A JP2010538014 A JP 2010538014A JP 2011507273 A5 JP2011507273 A5 JP 2011507273A5
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JP
Japan
Prior art keywords
light
etch stop
photon energy
semiconductor structure
light emitting
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Pending
Application number
JP2010538014A
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English (en)
Japanese (ja)
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JP2011507273A (ja
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Publication date
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Priority claimed from PCT/US2008/082778 external-priority patent/WO2009075973A2/en
Publication of JP2011507273A publication Critical patent/JP2011507273A/ja
Publication of JP2011507273A5 publication Critical patent/JP2011507273A5/ja
Pending legal-status Critical Current

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JP2010538014A 2007-12-10 2008-11-07 半導体発光デバイス及びその作製方法 Pending JP2011507273A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US1260807P 2007-12-10 2007-12-10
PCT/US2008/082778 WO2009075973A2 (en) 2007-12-10 2008-11-07 Semiconductor light emitting device and method of making same

Publications (2)

Publication Number Publication Date
JP2011507273A JP2011507273A (ja) 2011-03-03
JP2011507273A5 true JP2011507273A5 (enExample) 2011-12-22

Family

ID=40756058

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010538014A Pending JP2011507273A (ja) 2007-12-10 2008-11-07 半導体発光デバイス及びその作製方法

Country Status (6)

Country Link
US (1) US20110121319A1 (enExample)
EP (1) EP2232590A4 (enExample)
JP (1) JP2011507273A (enExample)
KR (1) KR20100099254A (enExample)
CN (1) CN101939855B (enExample)
WO (1) WO2009075973A2 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102197551A (zh) * 2008-09-04 2011-09-21 3M创新有限公司 由gan ld光泵的散热器上式ⅱ-ⅵ族mqw vcsel
EP2335331A1 (en) * 2008-09-04 2011-06-22 3M Innovative Properties Company Monochromatic light source
JP2012502471A (ja) * 2008-09-04 2012-01-26 スリーエム イノベイティブ プロパティズ カンパニー 光遮断構成要素を有する光源
KR20110105842A (ko) 2008-12-24 2011-09-27 쓰리엠 이노베이티브 프로퍼티즈 컴파니 양면 파장 변환기를 갖는 광 발생 소자
KR20110099761A (ko) 2008-12-24 2011-09-08 쓰리엠 이노베이티브 프로퍼티즈 컴파니 양면 파장 변환기 및 이를 이용하는 광 발생 소자를 제조하는 방법
JP2013511844A (ja) * 2009-11-18 2013-04-04 スリーエム イノベイティブ プロパティズ カンパニー Ｉｉ〜ｖｉ半導体のための新規なウェットエッチング剤及び方法
EP2521189A3 (en) * 2011-04-29 2013-05-01 Institute of Nuclear Energy Research Atomic Energy Council Lift-off structure for substrate of a photoelectric device and the method thereof
US9331252B2 (en) 2011-08-23 2016-05-03 Micron Technology, Inc. Wavelength converters, including polarization-enhanced carrier capture converters, for solid state lighting devices, and associated systems and methods
US8975614B2 (en) 2011-08-23 2015-03-10 Micron Technology, Inc. Wavelength converters for solid state lighting devices, and associated systems and methods
KR20140111876A (ko) 2013-03-12 2014-09-22 삼성디스플레이 주식회사 표시 장치
CN103579503A (zh) * 2013-11-14 2014-02-12 吉林大学 一种利用光交联聚合物对有机电子器件进行薄膜封装的方法
US10090436B2 (en) * 2014-01-06 2018-10-02 Lumileds Llc Semiconductor light emitting device with shaped substrate and method of manufacturing the same
FR3019380B1 (fr) * 2014-04-01 2017-09-01 Centre Nat Rech Scient Pixel semiconducteur, matrice de tels pixels, structure semiconductrice pour la realisation de tels pixels et leurs procedes de fabrication
CN104810444B (zh) * 2015-03-04 2018-01-09 华灿光电(苏州）有限公司 发光二极管外延片及其制备方法、发光二极管芯片制备及衬底回收方法
US9847454B2 (en) * 2015-10-02 2017-12-19 Epistar Corporation Light-emitting device
ES2896179T3 (es) * 2016-05-13 2022-02-24 Commissariat Energie Atomique Procedimiento de fabricación de un dispositivo optoelectrónico que incluye una pluralidad de diodos de nitruro de galio
JP6760141B2 (ja) * 2017-03-07 2020-09-23 信越半導体株式会社 発光素子及びその製造方法
US20190123035A1 (en) * 2017-10-19 2019-04-25 Samsung Electronics Co., Ltd. Method of performing die-based heterogeneous integration and devices including integrated dies

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4584428A (en) * 1984-09-12 1986-04-22 Hughes Aircraft Company Solar energy converter employing a fluorescent wavelength shifter
US5055894A (en) * 1988-09-29 1991-10-08 The Boeing Company Monolithic interleaved LED/PIN photodetector array
JPH02267529A (ja) * 1989-04-07 1990-11-01 Fuji Photo Film Co Ltd 光波長変換素子およびその製造方法
US5300788A (en) * 1991-01-18 1994-04-05 Kopin Corporation Light emitting diode bars and arrays and method of making same
JP3215297B2 (ja) * 1995-07-18 2001-10-02 沖電気工業株式会社 半導体発光素子の製造方法
DE19542241C2 (de) * 1995-11-13 2003-01-09 Siemens Ag Optoelektronisches Bauelement in II-VI-Halbleitermaterial
JP3768302B2 (ja) * 1996-09-13 2006-04-19 同和鉱業株式会社 化合物半導体素子の製造方法
JPH11154774A (ja) * 1997-08-05 1999-06-08 Canon Inc 面発光半導体デバイスの製造方法、この方法によって製造された面発光半導体デバイス及びこのデバイスを用いた表示装置
JP3334598B2 (ja) * 1998-03-25 2002-10-15 日本電気株式会社 ＩｎＰ基板上ＩＩ−ＶＩ族化合物半導体薄膜
JP2000012981A (ja) * 1998-06-19 2000-01-14 Canon Inc 面型半導体光デバイスおよびその作製方法
JP2002118327A (ja) * 2000-10-06 2002-04-19 Furukawa Electric Co Ltd:The 化合物半導体装置の製造方法
TW493286B (en) * 2001-02-06 2002-07-01 United Epitaxy Co Ltd Light-emitting diode and the manufacturing method thereof
US20050167684A1 (en) * 2004-01-21 2005-08-04 Chua Janet B.Y. Device and method for emitting output light using group IIB element selenide-based phosphor material
JP4653662B2 (ja) * 2004-01-26 2011-03-16 京セラ株式会社 波長変換器、発光装置、波長変換器の製造方法および発光装置の製造方法
US7208768B2 (en) * 2004-04-30 2007-04-24 Sharp Laboratories Of America, Inc. Electroluminescent device
CN100472593C (zh) * 2004-10-28 2009-03-25 松下电器产业株式会社 显示装置及显示装置的驱动方法
US7745814B2 (en) * 2004-12-09 2010-06-29 3M Innovative Properties Company Polychromatic LED's and related semiconductor devices
US7402831B2 (en) * 2004-12-09 2008-07-22 3M Innovative Properties Company Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission
JP4837295B2 (ja) * 2005-03-02 2011-12-14 株式会社沖データ 半導体装置、ｌｅｄ装置、ｌｅｄヘッド、及び画像形成装置
DE102005047152A1 (de) * 2005-09-30 2007-04-12 Osram Opto Semiconductors Gmbh Epitaxiesubstrat, Verfahren zu seiner Herstellung und Verfahren zur Herstellung eines Halbleiterchips
JP2007157940A (ja) * 2005-12-02 2007-06-21 Nichia Chem Ind Ltd 発光装置および発光装置の製造方法
KR100730072B1 (ko) * 2005-12-06 2007-06-20 삼성전기주식회사 수직구조 질화갈륨계 발광 다이오드 소자 및 그 제조방법
JP2007250629A (ja) * 2006-03-14 2007-09-27 Toshiba Corp 発光装置及びその製造方法、並びに蛍光パターン形成物
WO2007139033A1 (ja) * 2006-05-26 2007-12-06 Fujifilm Corporation 面発光型エレクトロルミネッセント素子
US7952110B2 (en) * 2006-06-12 2011-05-31 3M Innovative Properties Company LED device with re-emitting semiconductor construction and converging optical element
US8188494B2 (en) * 2006-06-28 2012-05-29 Hewlett-Packard Development Company, L.P. Utilizing nanowire for generating white light
US9018619B2 (en) * 2006-10-09 2015-04-28 Cree, Inc. Quantum wells for light conversion
US8578427B2 (en) * 2008-03-04 2013-11-05 The Directv Group, Inc. Method for swapping channel assignments in a broadcast system

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