CN101939855B - 半导体发光装置及其制造方法 - Google Patents

半导体发光装置及其制造方法 Download PDF

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Publication number
CN101939855B
CN101939855B CN2008801265426A CN200880126542A CN101939855B CN 101939855 B CN101939855 B CN 101939855B CN 2008801265426 A CN2008801265426 A CN 2008801265426A CN 200880126542 A CN200880126542 A CN 200880126542A CN 101939855 B CN101939855 B CN 101939855B
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China
Prior art keywords
light
semiconductor construction
potential well
emitting
energy
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Expired - Fee Related
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CN2008801265426A
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English (en)
Chinese (zh)
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CN101939855A (zh
Inventor
迈克尔·A·哈斯
托马斯·J·米勒
孙晓光
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3M Innovative Properties Co
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3M Innovative Properties Co
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/826—Materials of the light-emitting regions comprising only Group IV materials

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  • Led Devices (AREA)
  • Weting (AREA)
CN2008801265426A 2007-12-10 2008-11-07 半导体发光装置及其制造方法 Expired - Fee Related CN101939855B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US1260807P 2007-12-10 2007-12-10
US61/012,608 2007-12-10
PCT/US2008/082778 WO2009075973A2 (en) 2007-12-10 2008-11-07 Semiconductor light emitting device and method of making same

Publications (2)

Publication Number Publication Date
CN101939855A CN101939855A (zh) 2011-01-05
CN101939855B true CN101939855B (zh) 2013-10-30

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CN2008801265426A Expired - Fee Related CN101939855B (zh) 2007-12-10 2008-11-07 半导体发光装置及其制造方法

Country Status (6)

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US (1) US20110121319A1 (enExample)
EP (1) EP2232590A4 (enExample)
JP (1) JP2011507273A (enExample)
KR (1) KR20100099254A (enExample)
CN (1) CN101939855B (enExample)
WO (1) WO2009075973A2 (enExample)

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CN102203970A (zh) * 2008-09-04 2011-09-28 3M创新有限公司 具有光阻挡元件的光源
US8865493B2 (en) 2008-12-24 2014-10-21 3M Innovative Properties Company Method of making double-sided wavelength converter and light generating device using same
JP2012514329A (ja) 2008-12-24 2012-06-21 スリーエム イノベイティブ プロパティズ カンパニー 両方の側に波長変換器を有する光生成デバイス
KR20120092673A (ko) 2009-11-18 2012-08-21 쓰리엠 이노베이티브 프로퍼티즈 컴파니 Ⅱ-ⅵ족 반도체를 위한 신규한 습식 에칭제 및 방법
EP2521189A3 (en) * 2011-04-29 2013-05-01 Institute of Nuclear Energy Research Atomic Energy Council Lift-off structure for substrate of a photoelectric device and the method thereof
US9331252B2 (en) * 2011-08-23 2016-05-03 Micron Technology, Inc. Wavelength converters, including polarization-enhanced carrier capture converters, for solid state lighting devices, and associated systems and methods
US8975614B2 (en) 2011-08-23 2015-03-10 Micron Technology, Inc. Wavelength converters for solid state lighting devices, and associated systems and methods
KR20140111876A (ko) 2013-03-12 2014-09-22 삼성디스플레이 주식회사 표시 장치
CN103579503A (zh) * 2013-11-14 2014-02-12 吉林大学 一种利用光交联聚合物对有机电子器件进行薄膜封装的方法
JP6628727B2 (ja) * 2014-01-06 2020-01-15 ルミレッズ ホールディング ベーフェー 加工されたサブストレートを用いた半導体発光デバイス及びその製造方法
FR3019380B1 (fr) * 2014-04-01 2017-09-01 Centre Nat Rech Scient Pixel semiconducteur, matrice de tels pixels, structure semiconductrice pour la realisation de tels pixels et leurs procedes de fabrication
CN104810444B (zh) * 2015-03-04 2018-01-09 华灿光电(苏州）有限公司 发光二极管外延片及其制备方法、发光二极管芯片制备及衬底回收方法
US9847454B2 (en) * 2015-10-02 2017-12-19 Epistar Corporation Light-emitting device
JP6843885B2 (ja) * 2016-05-13 2021-03-17 コミサリア ア エナジー アトミック エ オックス エナジーズ オルタネティヴ 複数の窒化ガリウムダイオードを備えた光電子デバイスを製造する方法
JP6760141B2 (ja) * 2017-03-07 2020-09-23 信越半導体株式会社 発光素子及びその製造方法
US20190123035A1 (en) * 2017-10-19 2019-04-25 Samsung Electronics Co., Ltd. Method of performing die-based heterogeneous integration and devices including integrated dies

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Also Published As

Publication number Publication date
WO2009075973A3 (en) 2009-08-13
JP2011507273A (ja) 2011-03-03
EP2232590A4 (en) 2013-12-25
US20110121319A1 (en) 2011-05-26
KR20100099254A (ko) 2010-09-10
CN101939855A (zh) 2011-01-05
EP2232590A2 (en) 2010-09-29
WO2009075973A2 (en) 2009-06-18

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