KR20100099254A - 반도체 발광 소자 및 이의 제조 방법 - Google Patents
반도체 발광 소자 및 이의 제조 방법 Download PDFInfo
- Publication number
- KR20100099254A KR20100099254A KR1020107014831A KR20107014831A KR20100099254A KR 20100099254 A KR20100099254 A KR 20100099254A KR 1020107014831 A KR1020107014831 A KR 1020107014831A KR 20107014831 A KR20107014831 A KR 20107014831A KR 20100099254 A KR20100099254 A KR 20100099254A
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor structure
- light
- potential well
- etch
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 193
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 150000001875 compounds Chemical class 0.000 claims abstract description 22
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims description 114
- 238000000034 method Methods 0.000 claims description 33
- 238000005530 etching Methods 0.000 claims description 21
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 20
- 230000007704 transition Effects 0.000 claims description 18
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 8
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims description 7
- 238000010276 construction Methods 0.000 claims description 5
- 229910015894 BeTe Inorganic materials 0.000 claims description 4
- -1 GaInP Inorganic materials 0.000 claims description 4
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 230000002745 absorbent Effects 0.000 claims description 2
- 239000002250 absorbent Substances 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 description 21
- 239000000956 alloy Substances 0.000 description 21
- 239000000463 material Substances 0.000 description 13
- 239000000243 solution Substances 0.000 description 8
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 238000003491 array Methods 0.000 description 3
- 229910052793 cadmium Inorganic materials 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 3
- 238000000927 vapour-phase epitaxy Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 239000004831 Hot glue Substances 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 238000004943 liquid phase epitaxy Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- CVOFKRWYWCSDMA-UHFFFAOYSA-N 2-chloro-n-(2,6-diethylphenyl)-n-(methoxymethyl)acetamide;2,6-dinitro-n,n-dipropyl-4-(trifluoromethyl)aniline Chemical compound CCC1=CC=CC(CC)=C1N(COC)C(=O)CCl.CCCN(CCC)C1=C([N+]([O-])=O)C=C(C(F)(F)F)C=C1[N+]([O-])=O CVOFKRWYWCSDMA-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- 229920001651 Cyanoacrylate Polymers 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 206010067482 No adverse event Diseases 0.000 description 1
- 239000004115 Sodium Silicate Substances 0.000 description 1
- 235000012545 Vaccinium macrocarpon Nutrition 0.000 description 1
- 235000002118 Vaccinium oxycoccus Nutrition 0.000 description 1
- 244000291414 Vaccinium oxycoccus Species 0.000 description 1
- QQWICBKIBSOBIT-WXUKJITCSA-N [(e)-2-(4-bicyclo[4.2.0]octa-1(6),2,4-trienyl)ethenyl]-[[(e)-2-(4-bicyclo[4.2.0]octa-1(6),2,4-trienyl)ethenyl]-dimethylsilyl]oxy-dimethylsilane Chemical compound C1=C2CCC2=CC(/C=C/[Si](C)(O[Si](C)(C)\C=C\C=2C=C3CCC3=CC=2)C)=C1 QQWICBKIBSOBIT-WXUKJITCSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000003044 adaptive effect Effects 0.000 description 1
- 239000001361 adipic acid Substances 0.000 description 1
- 235000011037 adipic acid Nutrition 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical class C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013043 chemical agent Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 235000004634 cranberry Nutrition 0.000 description 1
- NLCKLZIHJQEMCU-UHFFFAOYSA-N cyano prop-2-enoate Chemical class C=CC(=O)OC#N NLCKLZIHJQEMCU-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000013139 quantization Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052911 sodium silicate Inorganic materials 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 239000001993 wax Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/018—Bonding of wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/826—Materials of the light-emitting regions comprising only Group IV materials
Landscapes
- Led Devices (AREA)
- Weting (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US1260807P | 2007-12-10 | 2007-12-10 | |
| US61/012,608 | 2007-12-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20100099254A true KR20100099254A (ko) | 2010-09-10 |
Family
ID=40756058
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020107014831A Withdrawn KR20100099254A (ko) | 2007-12-10 | 2008-11-07 | 반도체 발광 소자 및 이의 제조 방법 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20110121319A1 (enExample) |
| EP (1) | EP2232590A4 (enExample) |
| JP (1) | JP2011507273A (enExample) |
| KR (1) | KR20100099254A (enExample) |
| CN (1) | CN101939855B (enExample) |
| WO (1) | WO2009075973A2 (enExample) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2332223A1 (en) * | 2008-09-04 | 2011-06-15 | 3M Innovative Properties Company | I i-vi mqw vcsel on a heat sink optically pumped by a gan ld |
| WO2010027580A2 (en) * | 2008-09-04 | 2010-03-11 | 3M Innovative Properties Company | Light source having light blocking components |
| WO2010027581A1 (en) * | 2008-09-04 | 2010-03-11 | 3M Innovative Properties Company | Monochromatic light source |
| EP2380217A2 (en) | 2008-12-24 | 2011-10-26 | 3M Innovative Properties Company | Method of making double-sided wavelength converter and light generating device using same |
| WO2010074987A2 (en) | 2008-12-24 | 2010-07-01 | 3M Innovative Properties Company | Light generating device having double-sided wavelength converter |
| CN102668044A (zh) * | 2009-11-18 | 2012-09-12 | 3M创新有限公司 | 用于ii-vi族半导体的新型湿蚀刻剂及方法 |
| EP2521189A3 (en) * | 2011-04-29 | 2013-05-01 | Institute of Nuclear Energy Research Atomic Energy Council | Lift-off structure for substrate of a photoelectric device and the method thereof |
| US9331252B2 (en) | 2011-08-23 | 2016-05-03 | Micron Technology, Inc. | Wavelength converters, including polarization-enhanced carrier capture converters, for solid state lighting devices, and associated systems and methods |
| US8975614B2 (en) * | 2011-08-23 | 2015-03-10 | Micron Technology, Inc. | Wavelength converters for solid state lighting devices, and associated systems and methods |
| KR20140111876A (ko) | 2013-03-12 | 2014-09-22 | 삼성디스플레이 주식회사 | 표시 장치 |
| CN103579503A (zh) * | 2013-11-14 | 2014-02-12 | 吉林大学 | 一种利用光交联聚合物对有机电子器件进行薄膜封装的方法 |
| CN105849915B (zh) * | 2014-01-06 | 2019-04-02 | 亮锐控股有限公司 | 具有成形衬底的半导体发光器件和制造所述器件的方法 |
| FR3019380B1 (fr) * | 2014-04-01 | 2017-09-01 | Centre Nat Rech Scient | Pixel semiconducteur, matrice de tels pixels, structure semiconductrice pour la realisation de tels pixels et leurs procedes de fabrication |
| CN104810444B (zh) * | 2015-03-04 | 2018-01-09 | 华灿光电(苏州）有限公司 | 发光二极管外延片及其制备方法、发光二极管芯片制备及衬底回收方法 |
| US9847454B2 (en) * | 2015-10-02 | 2017-12-19 | Epistar Corporation | Light-emitting device |
| KR102574122B1 (ko) * | 2016-05-13 | 2023-09-01 | 꼼미사리아 아 레네르지 아토미끄 에뜨 옥스 에너지스 앨터네이티브즈 | 복수의 질화갈륨 다이오드를 포함하는 광전자 장치를 제조하기 위한 방법 |
| JP6760141B2 (ja) * | 2017-03-07 | 2020-09-23 | 信越半導体株式会社 | 発光素子及びその製造方法 |
| US20190123035A1 (en) * | 2017-10-19 | 2019-04-25 | Samsung Electronics Co., Ltd. | Method of performing die-based heterogeneous integration and devices including integrated dies |
Family Cites Families (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4584428A (en) * | 1984-09-12 | 1986-04-22 | Hughes Aircraft Company | Solar energy converter employing a fluorescent wavelength shifter |
| US5055894A (en) * | 1988-09-29 | 1991-10-08 | The Boeing Company | Monolithic interleaved LED/PIN photodetector array |
| JPH02267529A (ja) * | 1989-04-07 | 1990-11-01 | Fuji Photo Film Co Ltd | 光波長変換素子およびその製造方法 |
| US5300788A (en) * | 1991-01-18 | 1994-04-05 | Kopin Corporation | Light emitting diode bars and arrays and method of making same |
| JP3215297B2 (ja) * | 1995-07-18 | 2001-10-02 | 沖電気工業株式会社 | 半導体発光素子の製造方法 |
| DE19542241C2 (de) * | 1995-11-13 | 2003-01-09 | Siemens Ag | Optoelektronisches Bauelement in II-VI-Halbleitermaterial |
| JP3768302B2 (ja) * | 1996-09-13 | 2006-04-19 | 同和鉱業株式会社 | 化合物半導体素子の製造方法 |
| JPH11154774A (ja) * | 1997-08-05 | 1999-06-08 | Canon Inc | 面発光半導体デバイスの製造方法、この方法によって製造された面発光半導体デバイス及びこのデバイスを用いた表示装置 |
| JP3334598B2 (ja) * | 1998-03-25 | 2002-10-15 | 日本電気株式会社 | ＩｎＰ基板上ＩＩ−ＶＩ族化合物半導体薄膜 |
| JP2000012981A (ja) * | 1998-06-19 | 2000-01-14 | Canon Inc | 面型半導体光デバイスおよびその作製方法 |
| JP2002118327A (ja) * | 2000-10-06 | 2002-04-19 | Furukawa Electric Co Ltd:The | 化合物半導体装置の製造方法 |
| TW493286B (en) * | 2001-02-06 | 2002-07-01 | United Epitaxy Co Ltd | Light-emitting diode and the manufacturing method thereof |
| US20050167684A1 (en) * | 2004-01-21 | 2005-08-04 | Chua Janet B.Y. | Device and method for emitting output light using group IIB element selenide-based phosphor material |
| WO2005071039A1 (ja) * | 2004-01-26 | 2005-08-04 | Kyocera Corporation | 波長変換器、発光装置、波長変換器の製造方法および発光装置の製造方法 |
| US7208768B2 (en) * | 2004-04-30 | 2007-04-24 | Sharp Laboratories Of America, Inc. | Electroluminescent device |
| US7973747B2 (en) * | 2004-10-28 | 2011-07-05 | Panasonic Corporation | Display and display driving method |
| US7402831B2 (en) * | 2004-12-09 | 2008-07-22 | 3M Innovative Properties Company | Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission |
| US7745814B2 (en) * | 2004-12-09 | 2010-06-29 | 3M Innovative Properties Company | Polychromatic LED's and related semiconductor devices |
| JP4837295B2 (ja) * | 2005-03-02 | 2011-12-14 | 株式会社沖データ | 半導体装置、ｌｅｄ装置、ｌｅｄヘッド、及び画像形成装置 |
| DE102005047152A1 (de) * | 2005-09-30 | 2007-04-12 | Osram Opto Semiconductors Gmbh | Epitaxiesubstrat, Verfahren zu seiner Herstellung und Verfahren zur Herstellung eines Halbleiterchips |
| JP2007157940A (ja) * | 2005-12-02 | 2007-06-21 | Nichia Chem Ind Ltd | 発光装置および発光装置の製造方法 |
| KR100730072B1 (ko) * | 2005-12-06 | 2007-06-20 | 삼성전기주식회사 | 수직구조 질화갈륨계 발광 다이오드 소자 및 그 제조방법 |
| JP2007250629A (ja) * | 2006-03-14 | 2007-09-27 | Toshiba Corp | 発光装置及びその製造方法、並びに蛍光パターン形成物 |
| US20090115328A1 (en) * | 2006-05-26 | 2009-05-07 | Seiji Yamashita | Surface emitting-type electroluminescent device |
| US7952110B2 (en) * | 2006-06-12 | 2011-05-31 | 3M Innovative Properties Company | LED device with re-emitting semiconductor construction and converging optical element |
| US8188494B2 (en) * | 2006-06-28 | 2012-05-29 | Hewlett-Packard Development Company, L.P. | Utilizing nanowire for generating white light |
| US9018619B2 (en) * | 2006-10-09 | 2015-04-28 | Cree, Inc. | Quantum wells for light conversion |
| US8578427B2 (en) * | 2008-03-04 | 2013-11-05 | The Directv Group, Inc. | Method for swapping channel assignments in a broadcast system |
-
2008
- 2008-11-07 CN CN2008801265426A patent/CN101939855B/zh not_active Expired - Fee Related
- 2008-11-07 KR KR1020107014831A patent/KR20100099254A/ko not_active Withdrawn
- 2008-11-07 WO PCT/US2008/082778 patent/WO2009075973A2/en not_active Ceased
- 2008-11-07 EP EP08858438.8A patent/EP2232590A4/en not_active Withdrawn
- 2008-11-07 JP JP2010538014A patent/JP2011507273A/ja active Pending
- 2008-11-07 US US12/744,553 patent/US20110121319A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| EP2232590A2 (en) | 2010-09-29 |
| CN101939855A (zh) | 2011-01-05 |
| CN101939855B (zh) | 2013-10-30 |
| JP2011507273A (ja) | 2011-03-03 |
| EP2232590A4 (en) | 2013-12-25 |
| WO2009075973A2 (en) | 2009-06-18 |
| WO2009075973A3 (en) | 2009-08-13 |
| US20110121319A1 (en) | 2011-05-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR20100099254A (ko) | 반도체 발광 소자 및 이의 제조 방법 | |
| CN101673794B (zh) | 发光元件 | |
| KR101550117B1 (ko) | 광전 소자 및 그 제조 방법 | |
| US20050017254A1 (en) | Light emitting diode and method of making the same | |
| JP2009540614A (ja) | 再発光半導体構成体を有する適応型ｌｅｄデバイス | |
| US8399906B2 (en) | AlGaInP-based light-emitting diode with double reflective layers and fabrication method thereof | |
| EP3105829A1 (en) | Manufacturable laser diode | |
| JP2012502472A (ja) | 単色光源 | |
| US20070290216A1 (en) | Semiconductor light emitting element, manufacturing method therefor, and compound semiconductor light emitting diode | |
| JPH11505066A (ja) | エピタキシャルオーミックコンタクトを含む▲ｉｉ▼−▲ｖｉ▼族半導体材料の集積ヘテロ構造およびその製造方法 | |
| US20120097921A1 (en) | Cadmium-free Re-Emitting Semiconductor Construction | |
| JP2010114337A (ja) | 発光素子 | |
| US9312439B2 (en) | Semiconductor light emitting device | |
| TW200810156A (en) | LED device with re-emitting semiconductor construction and reflector | |
| KR101722110B1 (ko) | 그레이드 영역을 포함하는 반도체 발광 장치 | |
| CN115274949A (zh) | 一种发光二极管及其制备方法 | |
| JP2009059851A (ja) | 半導体発光ダイオード | |
| US20150091046A1 (en) | HIGH-EFFICIENCY AlGaInP LIGHT-EMITTING DIODE GROWN DIRECTLY ON TRANSPARENT SUBSTRATE AND MANUFACTURING METHOD THEREOF | |
| US8941105B2 (en) | Zinc oxide based compound semiconductor light emitting device | |
| Hayashi et al. | Thermally engineered flip-chip InGaN/GaN well-ordered nanocolumn array LEDs | |
| US20240258771A1 (en) | Iii-nitride-based devices grown on a thin template on thermally-decomposed material | |
| CN113851563A (zh) | 一种薄膜型半导体芯片结构及应用其的光电器件 | |
| TW201438276A (zh) | 光電元件及其製造方法 | |
| Sviechnikov et al. | Optoelectronics: radiation sources and detectors | |
| JP2006270073A (ja) | 発光ダイオード及びその製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
Patent event date: 20100705 Patent event code: PA01051R01D Comment text: International Patent Application |
|
| PG1501 | Laying open of application | ||
| PC1203 | Withdrawal of no request for examination | ||
| WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |