TW200810156A - LED device with re-emitting semiconductor construction and reflector - Google Patents

Abstract

Briefly, the present disclosure provides a device comprising: (a) an LED capable of emitting light at a first wavelength; (b) a re-emitting semiconductor construction which comprises a potential well not located within a pn junction; and (c) a reflector positioned to reflect light emitted from the LED onto the re-emitting semiconductor construction. Alternately, the device comprises: (a) an LED capable of emitting light at a first wavelength; (b) a re-emitting semiconductor construction capable of emitting light at a second wavelength which comprises at least one potential well not located within a pn junction; and (c) a reflector which transmits light at said first wavelength and reflects at least a portion of light at said second wavelength. Alternately, the device comprises a semiconductor unit comprising a first potential well located within a pn junction which comprises a LED capable of emitting light at a first wavelength, and a second potential well not located within a pn junction which comprises a re-emitting semiconductor construction.

Description

200810156 IX. Description of the Invention: [Technical Field to Which the Invention Is Ascribed] The present invention relates to a light source. More particularly, the present invention relates to a light source in which light emitted from a light emitting diode (LED) impinges on a re-emitting semiconductor structure and excites the structure to down-convert a portion of the emitted light to a longer wavelength. . [Prior Art] A light-emitting diode (LED) is a solid-state semiconductor device that emits light when a current is transferred between an anode and a cathode. A conventional light-emitting diode includes a single two-two junction. The Pn junction may comprise an intermediate undoped region, and this type of pn junction may also be referred to as a tip junction. Like non-emitting semiconductor diodes, conventional light-emitting diodes transfer current more easily in one direction (i.e., in the direction in which electrons move from the n-region to the p-region). When the current passes through the = photodiode in the "forward" direction, the electrons from the n region are recombined with the holes from the p region: thereby producing photons. The light emitted by the conventional light emitting diode is in appearance The upper monochromatic 'R' is produced in a single narrow band of wavelengths. The emitted j-wavelength corresponds to the energy associated with the recombination of electrons and holes. In the simplest case, the energy is close to The band gap energy of the recombined semiconductor occurs. The conventional light emitting diode may additionally include one or more quantum 2's on the pn junction to capture electrons and holes in the south concentration, thereby enhancing the generation of light and the second right Investigators have attempted to produce a light-emitting diode device that emits white light or white light that appears to the naked eye. Some investigators reported a light-emitting diode 12I656 with multiple quantum wells in the pn junction. Doc 200810156 Allegedly • η or manufacturing, in which multiple quantum well systems are expected to emit light at different wavelengths. The following references may be related to this technique: US Patent No. 5,851,905; US Patent 6,3〇3,404 U.S. Patent No. 6,504,171; U.S. Patent No. 6,734,467; Damilano et al., Single-Piece White Light Emitting Diode Based on InGaN/GaN Multiple Quantum Wells, Jpn·j·Applied Physics Volume 40 (2001) L918 To the L920 page; Yamada et al., a high-light-efficiency white light-emitting diode composed of an InGaN multi-quantum well without a re-emitting semiconductor structure, jpn·J· Applied Physics, Volume 41 (2〇〇2), L246 to L248, Dalmasso et al., Injection-dependent dependence of electroluminescence spectra of GaN-based white light-emitting diodes without re-emitting semiconductor structures, phys stat·sol· (a) 192, No. 1, pp. Pp. 139-143 (2003). Some investigators reported the alleged design or manufacture of a light-emitting diode device combining two conventional light-emitting diodes that are expected to be independent at different wavelengths in a single device. Ground emission. The following references may be related to such techniques. U.S. Patent No. 5,85,905; U.S. Patent No. 6,734,467; U.S. Patent Publication No. 2002/0041148 A1; U.S. Patent Publication No. 2002/0134989 A1 No.; Luo et al., integration The patterned color and white light emitters with the three-color ZnCdSe / ZnCdMgSe quantum well structure, the paper Applied Physics, Vol. 77, No. 26, of 4259 to 4261 (2〇〇〇).

Some investigators report the alleged design or manufacture of light-emitting diode devices that combine a conventional light-emitting diode component with a chemically re-emitting semiconductor structure such as yttrium aluminum garnet (YAG). It is intended to absorb a portion of the light emitted by the light-emitting diode element and re-emit light of the longer wavelength I 121656.doc 200810156. U.S. Patent No. 5,998,925 and U.S. Patent No. 6,734,467 are incorporated herein by reference. Some investigators report that the legendary design or fabrication of light-emitting diodes is grown on a ZnSe substrate doped with I, Al, Cl, Br, Ga, or In to create a fluorescent center in the substrate. It is intended to absorb a portion of the light emitted by the light-emitting diode-element and re-emit a longer wavelength of light. U.S. Patent Application No. 6,337,536 and Japanese Patent Application Laid-Open No. Hei. 10 SUMMARY OF THE INVENTION The present disclosure provides an apparatus comprising: a) a light emitting body capable of emitting light at a first wavelength; b) a re-emitting semiconductor structure comprising: not positioned in a a potential well within the pn junction; and c) a reflector 'solidified to reflect light emitted from the light emitting diode onto the re-emitting semiconductor structure. The re-emitting semiconductor structure can additionally include an absorber layer that is in close proximity or immediately adjacent to a potential well. Potential wells can be used to measure φ subwells. In a specific embodiment, the re-emitting semiconductor structure is capable of emitting light at a second wavelength and the reflector reflects light at the first wavelength and transmits light at the second wavelength. The reflector can be a multilayer reflector, a non-planar flexible multilayer reflector, or a reflective polarizer layer. • In another aspect, the present disclosure provides a device comprising: a) a light emitting diode capable of emitting light at a first wavelength; b) a re-emitting semiconductor, a sigma structure, which is sufficient for a brother Two wavelengths of emitted light, including at least one potential well not positioned within a junction; and a hook reflector that transmits light at the first wavelength and reflects at least a portion of the light at the second wavelength. The re-emitting semi-conductor 121656.doc 200810156 may additionally include an absorbent layer that is in close proximity or immediately adjacent to one of the potential wells. Potential wells can be quantum wells. The reflector can be secured between the light emitting diode and the re-emitting semiconductor structure. The reflector can be a multi-layer reflector or a non-planar flexible multilayer reflector. In another aspect, the present disclosure provides an apparatus comprising: a semiconductor monolith comprising: i) positioning in a plane that includes one of a light-emitting diodes capable of emitting light at a first wavelength a first potential well, and (1) a second potential well not positioned within a pn junction of a re-emitting semiconductor structure; and b) a reflector fixed to reflect light emitted from the light emitting diode Up to the re-emitting semiconductor structure. The re-emitting semiconductor structure can additionally include an absorber layer that is in close proximity or immediately adjacent to a potential well. Potential wells can be quantum wells. In a specific embodiment, the re-emitting semiconductor structure is capable of emitting light at a second wavelength and the reflector reflects light at the first wavelength and transmits light at the second wavelength. The reflector can be a multi-layer reflector, a non-planar flexible multilayer reflector, or a reflective polarizer layer. In another aspect, the invention provides a drawing display device comprising a light emitting diode device in accordance with the present invention. In another aspect, the invention provides an illumination device comprising a light emitting diode device in accordance with the present invention. In this application: Regarding the layer stack in a semiconductor device, immediately adjacent to " means that in the absence of an intermediate layer, the next one, η is closely adjacent, 'meaning that there are one or several intermediate layers In the case of the next one, and "around" means cis121656.doc -9- 200810156 times before and after; "potential well, meaning a semiconductor device in the semiconductor device, which has a lower than the surrounding layer The conduction band energy or the valence band energy higher than the surrounding layer, or both; ', quantum well" means a potential well that is thin enough that the quantization effect will enhance the hole in the well Depending on the energy, the well usually has a bare coffee or a smaller thickness; "transition energy means that electrons and holes recombine energy, "lattice matching" means that two crystalline materials (such as a substrate) are referenced Each of the materials taken in the isolation has a lattice constant, and the lattice constants are substantially equal, usually at most 0.2% of each other's phase, more usually at most The difference is 1%, and most usually at most 0.01% difference from each other, and "false crystal" means, referring to one of the given thicknesses of the first crystalline layer and a second crystalline layer (such as an epitaxial layer and a substrate) Each layer taken in the isolation has a lattice constant, and such lattice constants are substantially similar such that the first layer having a given thickness can be in the plane of the layer substantially free of mismatch defects The lattice spacing of the second layer. It should be understood that any of the specific embodiments of the present invention including n-imposing and P-imposing semiconductor regions described herein, another embodiment should be considered as disclosed herein, where n-doped systems and P Doping exchange and vice versa. It should be understood that 'in the case of the statement, the 'potential well', the 'first potential well', the second electric (well and second potential well), a single potential well or Multiple potential wells that typically share similar characteristics can be provided. Similarly, it should be understood that the case of each of the "quantum wells,,, "first quantum wells,,,, the second S subwells" and the "third quantum wells" is stated in this paper. In the following, a single neutron well or a plurality of quantum wells that generally share similar characteristics can be provided. [Embodiment] The present invention provides an apparatus comprising: a light emitting diode; a re-emitting semiconductor structure and a reflector And is fixed to reflect the emitted light from the light emitting diode onto the re-emitting semiconductor structure. Generally, the light emitting diode can emit light at a “first wavelength” and the re-emitting semiconductor structure • (4) The first wavelength absorbs light and re-emits light at a second wavelength. The re-emitting semiconductor structure includes a potential well that is not positioned within a pn junction. The equipotential well of the re-emitting half-V body structure is usually but not necessarily In another embodiment, the apparatus includes a reflector that multiplexes the first wave and reflects at least one of the light at a second wavelength. The reflector can be attached to the light emitting diode body Between the re-emitting semiconductor structures, the light-emitting diode emits photons in response to a current and φ 1 the re-emitting semiconductor structure emits photons in response to the photons emitted from the light-emitting diodes. A portion of the absorption. In a specific embodiment, the re-emitting semiconductor structure additionally includes a beta-absorbing layer that is in close proximity or immediately adjacent to the potential well. The absorber layer typically has a band gap energy that is less than or equal to & The energy of the photon emitted by the light-emitting diode is greater than the energy of the potential well of the re-emitting semiconductor structure. In a typical operation, the absorber layer assists in absorbing photons emitted from the light-emitting diode. In a specific embodiment The 7-emitting semiconductor structure additionally includes at least one potential well not positioned in the "punching plane" having a second transition energy not equal to the transition energy of the first potential well - 121656.doc • 11 - 200810156 In a specific embodiment, the light emitting diode system is a uv light emitting diode. In one such specific embodiment, the reemitting semiconductor structure comprises unlocated At least one first potential well in a pn junction having a first transition energy corresponding to blue wavelength light; at least one second potential well not positioned in a splicing surface, corresponding to green wavelength light a second transition energy; and at least a third potential well not positioned within the pn junction having a third transition energy corresponding to red wavelength light. In a specific embodiment, the light emitting diode system A visible light emitting diode, typically a green, blue or violet light emitting diode, more typically a green or blue light emitting diode and an agricultural 4 series blue light emitting diode. In a specific embodiment The re-emitting semiconductor structure includes at least one potential well not positioned within a pn junction having a first transition energy corresponding to a page or green wavelength light (more typically green wavelength light), and not positioned At least one first potential well within a junction having a second transition energy corresponding to orange or red wavelength light (more typically red wavelength light). The re-emitting semiconductor structure can include an additional potential well and an additional absorber layer. Any suitable light emitting diode can be used in the practice of the present invention. An element (including the light-emitting diode and the re-emitting semiconductor structure) of the device according to the invention may be composed of any suitable semiconductor comprising: a group element such as Si or Ge (rather than in the light-emitting layer); ΙΠ·ν compounds, such as InAs, A1As, GaAs, Inp, Alp, Gap, “讥, GaSb and their alloys; ΐΐ-νι compounds, such as ZnSe, CdSe,

MgSe, ZnTe, CdTe, BeTe, MgTe, ZnS, CdS, Bes,

MgS and its alloys; or alloys of any of the above. Where appropriate, 121656.doc -12- 200810156 the semiconductors may be n-doped or p-doped by any suitable method or by inclusion of any suitable dopant. In a typical embodiment, the light emitting diode is a III-V semiconductor device and the re-emitting semiconductor structure is a π-νι semiconductor device. In one embodiment of the invention, the composition of the layers of one of the components of the device, such as the light emitting diode or the re-emitting semiconductor structure, is selected in accordance with the following considerations. Each layer is typically pseudo-crystallographically or lattice-matched to the substrate having a thickness given for that layer. Alternatively, each layer pair may be pseudomorphic or lattice matched to the adjacent layer. The potential well layer material and thickness are typically selected to provide a desired transition energy that will correspond to the wavelength of light to be emitted from the quantum well. For example, the dots identified as 460 nm, 540 nm, and 630 11 melons in Figure 2 represent gold, which has a lattice constant close to the lattice constant of the InP substrate (5.8687 angstroms or 0.58687 rnn) and corresponds to 46 〇 nm (blue Bandgap energy at wavelengths of 54 〇 nm (green) and 630 nm (red). A potential well can be considered a quantum well if the potential well is sufficiently thin that the one-pass will increase the energy of the transition above the large band gap energy in the well. The thickness of each quantum well layer will determine the amount of quantized energy in the quantum well, which is added to the large band gap energy to determine the transition energy in the quantum well. Thus, the wavelength associated with each quantum well can be tuned by adjusting the quantum well thickness. In general, the thickness of a quantum well layer is between i and 丨 (eight) nm, and more typically between 2 nm and 35 nm. In general, the quantized energy is converted to: a wavelength reduction of 2 〇 to 5 〇 nm that is desired depending on the band gap energy alone. The compressive force in the emissive layer also changes the energy of the potential well and the quantum well, 121656.doc •13- 200810156 This compressive force contains the compressive force generated by the poor matching of the lattice constant between the pseudomorphic layers. . Techniques for calculating the energy of transitions in stressed or unstressed potential wells or quantum wells are known in the art, such as Herbert.工程Spray of Engineering Quantum Mechanics' Materials Technology and Applied Physics (Engiew〇〇d CHffs City, San Jose, 1994), pp. 54-63; and Z (^, ed, Quantum Well Laser (California Holy Land) Togo City Academic Press, 1993) pages 72 to 79, both of which are incorporated herein by reference.

Any suitable emission wavelength can be selected, including wavelengths in the infrared, visible, and ultraviolet bands. In a particular embodiment of the invention, 'selecting an emission wavelength for a combined output of light emitted by the device establishes the appearance of any color that can be produced by a combination of one or more monochromatic sources, The color is white or close to white, color, deep red, cyan, and the like. In another embodiment, the device of the present invention emits light at an invisible infrared or ultraviolet wavelength and at a visible wavelength as an indication that the device is in operation. Generally speaking, the light-emitting diode emits the photons of the shortest wavelength, so from! The photons emitted by the meta-light emitting diode have & energies to drive the potential wells in the re-emitting semiconductor structure. In a typical embodiment, a photodiode system _m_v semiconductor device (example # GaN-based luminescence-emitting diode) is used, and the re-emitting semiconductor structure is an II-VI semiconductor device. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a band diagram showing the conduction band and the eigenfrequency ▼ of a semiconductor in a re-emitting semiconductor structure in accordance with an embodiment of the present invention. The layer thickness is not expressed in proportion. The table indicates the composition of 121656.doc -14- 200810156 layer 1 and 9 in this embodiment and the band gap energy (Eg) of the composition. This configuration can be grown on an InP substrate.

Table I

Layer composition band gap energy (Eg) 1 Cdo.24Mgo.43Zno.33Se 2.9 eV 2 Cd〇.35Mg〇.27Zn〇.38Se 2.6 eV 3 Cd〇.7〇Zn〇.3〇Se 1.9 eV 4 Cd〇35Mg 〇.27Zn〇.38Se 2.6 eV 5 Cdo.24Mgo.43Zno.33Se 2.9 eV 6 Cdo.35Mgo.27Zno.38Se 2.6 eV 7 Cdo.33Zno.67Se 2.3 eV 8 Cdo.35Mgo.27ZnO.38Se 2.6 eV 9 Cdo.24Mgo .43Zno.33Se 2.9 eV Layer 3 represents a single potential well that emits a red quantum well with a thickness of approximately 10 nm. Layer 7 represents a single potential well that emits a green quantum well with a thickness of about 10 nm. Layers 2, 4, 6 and 8 represent absorber layers, each layer having a thickness of about 1000 nm. Layers 1, 5 and 9 represent the support layer. The support layer is typically selected to be substantially transparent to the light systems emitted from quantum wells 3 and 7 and from short wavelength light emitting diodes 20. Alternatively, the apparatus can include a plurality of red or green potential wells or quantum wells separated by an absorber layer and/or a layer #. Without wishing to be bound by theory, the specific embodiment of the invention represented by Figure 1 operates according to the principle that blue wavelength photons emitted by the light emitting diode and reflected on the reemitting semiconductor structure can be It is absorbed and re-emitted as a green wavelength photon from a quantum well 7 that emits green light or re-emitted as a red wavelength photon from a quantum well 3 that emits red light. The absorption of a short wavelength photon produces a pair of holes that can then be combined in a quantum well with the emission of a light 121656.doc -15-200810156. The multi-color combination of blue, green, and red wavelength light emitted from the device can appear white or nearly white. The intensity of the blue, green, and red wavelength light emitted from the device can be balanced in any suitable manner, including manipulating the number of each type of quantum well, using a filter or reflective layer, and manipulating the thickness of the absorber layer. And the composition. Figure 3 shows a spectrum of light emitted from a particular embodiment of the apparatus according to the invention. Referring again to the specific embodiment illustrated by Figure 1, the absorbing layers 2, 4, 5 and 8 can be adapted to absorb photons emitted from the luminescent diode by: selecting a bandgap for the absorbing layers The energy is intermediate between the energy of the photons emitted from the light-emitting body and the energy of the quantum wells 3 and 7. The electrons and holes generated by the absorption of photons in the absorbing layers 2, 4, 6 and 8 are typically captured by quantum wells 3 and 7 before being recombined with the accompanying emission of a photon. The absorbent layer optionally has a compositional gradient in all or a portion of its thickness to transport or direct electrons and/or holes in the form of a funnel toward the potential well. In some embodiments of the invention, a neoluminescent diode and the re-emitting semiconductor structure are provided in a single semiconductor unit. The semiconductor unit typically includes a first potential well positioned within a pn junction and a second potential well not positioned within a junction. The equipotential well is typically a quantum well. The single light emits light at two wavelengths, one wavelength corresponding to the turntable b1 of the first potential well and the first wavelength corresponding to the transition energy of the second potential well. In the relay, the first potential well emits photons in response to the motor passing through the pn junction and the second potential well emits photons in response to absorption of a portion of the photons emitted from the first potential well. The semiconductor unit may additionally include a package 121656.doc -16 - 200810156 surrounding or in close proximity to one or more absorber layers adjacent to the second potential well. The absorber layer typically has a band gap energy that is less than or equal to the transition energy of the first potential well and greater than the transition energy of the second potential well. In a typical operation, the absorber layer assists in absorbing photons emitted from the first potential well. The semiconductor unit can include an additional potential well positioned within the pn junction or not positioned within the pn junction, and an additional absorber layer. Figure 4 is a band diagram showing the conducted and valence bands of a semiconductor in such a semiconductor unit in accordance with an embodiment of the present invention. The layer thickness is not to scale. Table II indicates the composition of layers 1 to 14 in this specific embodiment and the band gap energy (Eg) of the composition.

Table II

Layer composition band gap energy (Eg) 1 InP substrate 1.35 eV 2 η doped Cdo.24Mgo.43Zno.33Se 2.9 eV 3 Cd〇.35Mg〇.27Zn〇.38Se 2.6 eV 4 Cd〇e7〇Zn〇.3〇 Se 1.9 eV 5 Cdo.35Mgo.27Zno.38Se 2.6 eV 6 η doped Cdo.24Mgo.43Zno.33Se 2.9 eV 7 Cd〇e35Mg〇.27Zn〇.38Se 2.6 eV 8 Cdo.33Zno.67Se 2.3 eV 9 Cd〇. 35Mg〇.27Zn〇.38Se 2.6 eV 10 n doped Cdo.24Mgo.43Zno.33Se 2.9 eV 11 undoped Cdo.24Mgo.43Zno.33Se 2.9 eV 12 Cd〇jiMg〇.32Zn〇.37Se 2.7 eV 13 undoped Miscellaneous Cdo.24Mgo.43Zno.33Se 2.9 eV 14 p doped Cd〇.24Mg〇, 43Zn〇.33Se 2.9 eV Layers 10, 11, 12, 13 and 14 represent a pn junction, or more specifically, a tip The junction is because the intermediate undoped ("inner u-doped" layers 11, 12, and 13 are 121656.doc -17. 200810156 interposed between the n-doped layer 10 and the p-doped layer 14. Layer 12 represents the pn A single potential well within the junction, which is a quantum well having a thickness of about 10 nm. Alternatively, the device may include a plurality of potential wells or quantum wells within the pn junction. Layers 4 and 8 indicate not in a pn Second and third potential wells in the junction, each Each of the potential wells is a quantum well having a thickness of about 1 〇 nm 2 . Alternatively, the dream may include additional potential wells or quantum wells that are not within the pn junction. In another alternative, the apparatus may include A single potential well or quantum well within the junction. Layers 3, 5, 7, and 9 represent absorber layers, each layer having a thickness of about 1 。. Electrical contacts (not shown) not shown are provided A path for supplying current to the splicing surface. The electrical contact is electrically conductive and typically consists of a conductive metal. The positive electrical contact is electrically connected to the layer 14 directly or through an intermediate structure. The negative contact is directly or through the middle. The structure is indirectly electrically connected to one or more of the layers 1, 2, 3, 4, 5, 6, 7, 8, 9 or 1 . Without wishing to be bound by theory, this embodiment of the invention is The example operates according to the following principles: When a current is transferred from layer 14 to layer 1 , the blue wavelength photonic system is emitted from the quantum well (12) in the pn junction. Photons traveling in the direction of layer 14 may leave the Device. Photons traveling in opposite directions can be absorbed and extracted from the second quantum well (8 Re-emitted as a green wavelength photon or re-emitted as a red wavelength photon from the 1st (4) well. The absorption of a blue wavelength photon produces an electron hole pair that can then be combined in a second or third quantum well to emit a photon. Green or red wavelength photons traveling in the direction of layer 14 may leave the device. The multicolor combination of blue, green and red wavelength light emitted from the device can appear white or nearly white. The intensity of the blue, green, and red wavelength light emitted from the device can be balanced in any suitable manner, 121656.doc • 18-200810156 which includes manipulating the number of potential wells of each type and using a filter or reflective layer. Figure 3 shows a spectrum of light emitted from a particular embodiment of the apparatus according to the invention. Referring again to the specific embodiment illustrated by Figure 4, the absorbing layers 3, 5, 7 and 9 may be particularly adapted to absorb photons emitted from the first quantum well (12) because the absorbing layers have a first quantum well ( 12) The band gap energy between the transition energy and the transition energy of the second and third quantum wells (8 and 4). The electrons and holes generated by the absorption of photons in the absorbing layers 3, 5, 7 and 9 are captured by the second and third quantum wells 8 and 4, usually before recombination with the emission of a photon. The absorber layer can be doped as desired (usually like to the surrounding layer), which in this particular embodiment is n-doped. The absorbent layer may optionally have a compositional gradient in all or a portion of its thickness to transport or direct electrons and/or holes in the form of a funnel toward the potential well. In the case of the light-emitting diode system, a visible-wavelength light-emitting diode, the layers of the re-emitting semiconductor structure are damaging to light emitted from the light-emitting diode. P is transparent. Alternatively, for example, in the case of the illuminating diode system, a uv wavelength light emitting diode, one or more of the layers of the re-emitting semiconductor structure may block a substantial portion or substantial of the light emitted from the light emitting diode. All of the light emitted from the device is blocked, so that one of the light emitted from the device is larger than the trowel or the light that is re-emitted from the re-emitting semiconductor structure in the luminosity of the light-emitting diode system In the case of a diode, the semiconductor structure 1 () may include a quantum well that emits red, green, and blue light. The device according to the invention may comprise 121656.doc • 19- 200810156 additional layers of conductive, semi-conductive or non-conductive material. An electrical contact layer can be added to provide a path for supplying current to the light emitting diode. A filter layer can be added to change or correct the balance of the wavelength of light in the light emitted by the adapted light-emitting diode. In a specific embodiment, the apparatus according to the present invention produces white or near white light by emitting light at four dominant wavelengths in the blue, green, yellow and red bands. In a specific embodiment, the apparatus according to the present invention produces white or near white light by emitting light at two dominant wavelengths in the blue and yellow bands. The device according to the invention may comprise additional semiconductor components including active or passive components such as resistors, diodes, Zener diodes, capacitors, transistors, bipolar transistors, FET transistors, MOSFET transistors Insulated gate bipolar transistors, optoelectronic crystals, photodetectors, SCRs, thyristors, triacs, voltage regulators, and other circuit components. The device according to the invention may comprise an integrated circuit. The device according to the invention may comprise a display panel or a lighting panel. The light-emitting diode and the re-emitting semiconductor structure constituting the device according to the present invention may be fabricated by any suitable method, which may include molecular beam doping (MBE), chemical vapor deposition, liquid phase epitaxy And the vapor phase stupid crystal. The components of the device according to the invention may comprise a substrate. Any suitable substrate can be used in the practice of the present invention. Typical substrate materials include Si, Ge, GaAs, InP, sapphire, SIC, and ZnSe. The substrate can be n-doped, erbium-doped or semi-insulating, which can be achieved by any suitable method or by inclusion of any suitable dopant. Furthermore, the components of the device according to the invention may be free of a substrate. In a specific embodiment, the components of the device according to the invention of the invention of 121,656.doc. 20-200810156 can be formed on a substrate and then separated from the substrate. The elements of the device according to the invention may be joined together by any suitable means comprising the use of a viscous or fused material, pressure, heat or a combination thereof. In general, the established weld is transparent. The soldering method may comprise an interface or edge splicing. Optionally, a refractive index matching layer or a gap filling space may be included. Any suitable reflector can be used in the device of the present invention. Typically, ancient times, a layer reflector is used, which can be a non-planar flexible multilayer reflector. The multilayer reflector comprises a polymeric multilayer optical film, i.e., a film having alternating layers of tens, hundreds, or thousands of first and second polymeric materials, the thickness and refractive index of which are selected to achieve a desired portion of the spectrum. The desired reflectivity is, for example, limited to one of the UV wavelengths of the reflection band or to one of the visible wavelengths of the reflection band. See, for example, U.S. Patent No. 5,882,774 (J0nza et al.). The reflection band produced by such a film also experiences a blue shift similar to the blue shift associated with the stack of inorganic isotropic materials with the angle of incidence, but the polymeric multilayer optical film can be processed so that adjacent layer pairs have a match or Nearly matching, or intentionally mismatching the refractive index associated with the z-axis perpendicular to the film, such that the reflectivity of each interface between adjacent layers of P-polarized light decreases slowly with incident angle, essentially Independent of the angle of incidence, or increasing with an angle of incidence that deviates from the vertical. Therefore, for a P-polarized light even at a highly oblique incident angle pole, such a polymeric multilayer optical film can maintain a high reflectance level, thereby reducing reflection by reflection compared to conventional inorganic isotropic stacked reflectors. The amount of ρ-polarized light transmitted by the film. To achieve these characteristics, the polymeric material and processing conditions are selected such that for each pair of adjacent optical layers, the difference in refractive index along the Z-axis (parallel to the thickness of the film) is not exceeded. The refractive index difference along the X or y (in-plane) axis is a fraction of one, which is 〇, 5, 0.25 or even 0.1. Alternatively, the difference in refractive index along the 2 axes may be inversely proportional to the difference in refractive index in the plane. The use of a polymeric multilayer optical film also allows for the use of various new embodiments and methods of construction because of the flexibility and formability of such films, whether or not they have the refractive index relationship referred to above. For example, the polymeric multilayer optical film can be permanently deformed to have a three dimensional shape, such as a paraboloid, a sphere, or a portion of an ellipsoid, by embossing, heat forming, or other known means. See generally, published application US 2002/0154406 (Merrill et al.). For a specific embodiment of the additional polymeric multilayer film, see also U.S. Patent No. 5,540,978 (Schrenk). Unlike conventional inorganic isotropic stacks which are typically vapor deposited layer by layer on rigid, brittle substrates, polymeric multilayer optical films can be fabricated in large volume rolls and laminated to other films and coated. And can be die cut or otherwise subdivided into small pieces for easy incorporation into an optical system, as explained further below. A suitable method of subdividing a polymeric multilayer optical film is disclosed in U.S. Application Serial No. 1/268,118, filed on Jan. 2, 2011. Various polymeric materials are suitable for use in multilayer optical films comprising devices for light emitting diodes. However, especially where the device comprises a white light re-emitting semiconductor structure that is coupled to a UV light emitting diode excitation source, the multilayer optical film preferably includes alternating polymerization consisting of materials that resist degradation when exposed to uv light. Layer of matter. In this respect, a particularly preferred polymer is a poly(ethylene terephthalate) (PET)/co-methacrylic acid (c〇_pMMA). The uv stability of the polymeric reflection 121656.doc -22- 200810156 can also be increased by incorporating a _v light absorbing stabilizer (e.g., hindered amine light stabilizer (HALS)). In some cases, the polymeric multilayer optical film may also comprise a transparent metal or metal oxide layer. See 曰 (for example) pct announcement for Jan 778 (〇uderkirk et al.). In applications where particularly high intensity UV light will be unacceptably degraded by a combination of a stronger polymer material, the use of inorganic materials to form a multilayer stack can be advantageous. The layer of inorganic material may be isotropic or may be fabricated to exhibit formal birefringence as illustrated in PCT Bulletin wo G1/7549G (Weber) and thus have an advantageous refraction that produces enhanced p-polarized reflectance as explained above. Rate relationship. However, in most cases, it is convenient and cost-effective to take two layers of multi-layer optical film as a substantially complete polymer without inorganic materials. 5 and 6 depict an embodiment in which the re-emitting semiconductor structure 22 can be associated with one of a smear (LP) reflector 24 and a short pass (SP) reflector 26 (both shown in the figure) or The two combine to form a combined reflector and re-transmitter structure 16. A Lp mirror or filter based on the scattering procedure can achieve a relatively constant performance in a functional relationship to the angle of incidence. LP and SP mirrors with a stack of inorganic dielectric materials provide good spectral selectivity over a narrow range of incident angles. The device 10 additionally includes a light emitting diode 12 on the mount 14 and may include a capsule 18 having a raised surface 20. Where the light emitting diode and re-emitting semiconductor structure comprise a single semiconductor unit, only a remote pass (LP) reflector 24 may be required. 7 through 9 depict an alternative configuration of means 40, 50, 60 utilizing concave multilayer optical film LP reflectors 46, 56. Separating and bending the LP reflectors 46, 56 from the re-emitting semiconductor structures 42, 52 to present a recessed surface to the re-emitting semiconductor structures 121656.doc -23-200810156 42, 52 and the LEDs 12 Helps reduce the range of incident angles of the excitation light impinging on the LP reflectors 46, 56, thereby reducing leakage of the light-emitting diode light caused by the blue-shift effect of the LP reflectors 46, 56. Preferably, the multilayer optical film is permanently embossed into a suitably shaped recessed surface by embossing or other suitable means and then immersed in a transparent medium 18. LP or SP multilayer optical films are spectral reflectors within their individual reflection bands. Diffuse reflection from a multilayer optical film is generally negligible. In Figure 7, device 40 includes a relatively small area of re-emitting semiconductor structure layer 42 disposed on an optional (9) reflector 44 comprised of a polymeric multilayer optical film. The LP reflector 46 has been embossed to obtain a recessed shape and is secured adjacent to the other components (42, 44) of the re-emitting semiconductor structure reflector assembly. The light-emitting diode 12 and the heat sink 14 are arranged to guide the excitation light emitted by the light-emitting diode toward a central portion of the re-emitting semiconductor structure layer 42. The car's father & 'excitation light has its highest influence at or near the center of the re-emitting semiconductor structure layer 2 2 . Excitation light that is not absorbed during the initial travel of the re-emitting semiconductor structure layer 42 passes through a region 48 between the LP reflector 46 and the re-emitting semiconductor structure layer 42, and then toward the re-emitting semiconductor structure layer by the LP reflector 46 plus the previous back reflection. Region 48 may be comprised of a transparent infusion material 18, or another polymeric material, or air (or other gas) or glass. The LP reflector 46 is preferably shaped to minimize the amount of excitation light that is reflected back to the re-emitting semiconductor structure. Figure 8 shows a device 50 which is similar to device 40 except that the re-emitting semiconductor structure layer 52, SP reflector 54 and LP reflector 56 have been increased in size. For the geometry of the heat sink 14 from the light emitting diode 12 to the re-emitting semiconductor 121656.doc -24-200810156, the mouth layer, the Ό疋 distance and the same heat sink 14, the larger LP reflection benefit 56 will be The center of the re-emitting semiconductor structure layer produces a higher concentration of light. The smaller central emission area of the re-emitting semiconductor structure layer presents a smaller range of re-emission light incident angles to the surface of the LP reflector, thereby improving overall device efficiency. As noted above, region 58 may be comprised of infusion material 18 or another polymeric material, or air (or other gas) or glass. The device 60 shown in Figure 9 is similar to the device 5〇 except for the following cases. The Lp reflector 66 now forms the outer surface of the light source. Zone 68 may be filled with potting material 18 or another transparent medium. The re-emitting semiconductor structural layers of Figures 7 through 9 can be continuous or patterned to limit the re-emitting semiconductor structure to its most effective extent. Furthermore, in the specific embodiment of FIGS. 5 and 7 to 9 and the other embodiment in which the re-emitting semiconductor structure and the reflector assembly are arranged on and spaced apart from the light-emitting diode, the device can be manufactured. The second half includes half of the light emitting diode having a heat sink, and the other half includes the re-emitting semiconductor structure layer and the (etc.) multilayer reflector. The two halves can be fabricated separately and then joined or otherwise secured together. This structural technique can help simplify manufacturing and increase total production. Figure 10 demonstrates the concept of other embodiments that may be advantageously employed herein to provide an air gap between the light emitting diode and the re-emitting semiconductor structure layer and/or to provide access to the re-emitting semiconductor structure and reflection An air gap of one or more components of the device assembly. Based on the simplicity of the description, only certain elements of a device are shown in the figure. An air gap 70 is shown between the light emitting diode 12 and the re-emitting semiconductor structure layer 72, adjacent to the multilayer optical film j§p reflection $121656.doc -25-200810156 74. The air gap has minimal detrimental effect on the excitation light from the light emitting diode to the re-emitting semiconductor structure layer due to the relatively small associated angle. However, the air gap initiates total internal reflection (TIR) of light traveling at a high angle of incidence (e.g., light traveling in the Sp reflector 74, re-emitting semiconductor structure layer 72, and LP reflector). In the particular embodiment of Figure 1, the efficiency of the sp reflector 74 is enhanced by allowing the butt IR to be performed on the lower surface of the SP reflector 74. Alternatively, the SP reflector 74 can be eliminated and the air gap can be formed directly under the re-emitting semiconductor structure layer 72. An air gap may also be formed on the upper side of the re-emitting semiconductor structure layer 72, or adjacent to the LP reflector on the upper or lower surface of the layer. One method for providing this air gap involves the use of known microstructured membranes. Such films have a substantially flat surface opposite a microstructured surface. The microstructured surface can be characterized by a single set of linear v-shaped grooves or prisms, a plurality of sets of intersecting v-shaped grooves defining a micro-tapered array, and one or more sets of narrow ridges. An air gap is formed between the uppermost portions of the microstructured surface when the microstructured surface of such a film is placed away from the other flat film. As the re-emitting semiconductor structure converts light of one wavelength (excitation wavelength) into light of other wavelengths (transmitted wavelength), heat may be generated. The appearance of the air gap close to the re-emitting + conductor structure may greatly reduce the heat transfer of the re-emitting semiconductor structure to the surrounding material. The reduced heat transfer can be compensated for in other ways, such as by providing a layer of glass or transparent ceramic adjacent to the layer of re-emitting semiconductor structure that can laterally remove heat. Another method of improving the efficiency of the apparatus according to the present disclosure is to configure the light emitting diode, the re-emitting semiconductor structure layer, and the reflector to excite the light emitting diode by the LP reflector. At least some of the light straight 121656.doc -26 - 200810156

The reflection is on the top (viewing) surface of the re-emitting semiconductor structure layer, and not all of the excitation light is guided to the bottom surface of the re-emitting semiconductor structure layer. Figure (10) shows such a device 80. The heat sink "| has been modified from the above specific embodiment" so that the light-emitting diode 12 and the re-emitting semiconductor structure (4) can be generally coplanar mounted. An SP reflector 84 is shown below the re-emitting semiconductor structure layer, but This will not be required in many cases. This is because the ejector 86, which has been embossed in the form of a recessed ellipse or the like, directs the uv excitation light directly from the luminescent diode to the re-emitting semiconductor structure layer 82. On the upper surface, the surface facing device 8Qn, the light emitting diode and the re-emitting semiconductor structure layer are preferably disposed at a focal length of the rounding. The visible light emitted by the re-emitting semiconductor structure layer is U-reflector 86. Transmitted and collected by the rounded front end of the body of the device to form the desired pattern or visible (preferably white) light. There are several benefits to the surface of the re-emitting semiconductor structure prior to directing the excitation light directly to the re-emitting semiconductor structure layer. The brightest part of the structural layer (where the excitation light is strongest) is exposed in front of the device rather than through the thickness of the re-emitting semiconductor structure layer. It is substantially obscured. The re-emitting semiconductor structure layer can be made thicker so that it absorbs substantially all of the uv excitation light without fear of the above-mentioned thickness/brightness tradeoff. The re-emitting semiconductor structure can be mounted on containing silver Or a wide-band metal mirror of reinforced aluminum. Figure 12 shows a further embodiment in which the light-emitting diode light impinges on the front surface of the re-emitting semiconductor structure layer, but wherein the light-emitting one-pole light Some of the light also impinges on the back surface. In this embodiment 121656.doc -27-200810156, some of the light emitted by the light-emitting diode 12 impinges on the back surface of the re-emitting semiconductor structure layer 92, but some The light-emitting diode light also reflects the concave Lp reflection benefit 96 to impact the surface of the re-emitting semiconductor structure layer 92 without traversing the re-emitting semiconductor structure. The visible light emitted by the re-emitting semiconductor structure layer 92 is then directed toward the viewer or The illuminated object passes through the LP reflector 96. The light emitting diode, the re-emitting semiconductor structure layer, and the LP reflector can all be immersed or attached as in the previous embodiment. A transparent perfusion medium is shown. Figure 13 schematically shows another embodiment in which the combination of non-imaging concentrators is configured to enhance the operation of the multilayer optical film. Specifically, the concentrator elements 100a, 100b, 100c are provided as Displayed between the light emitting diode 12, the SP reflector 104, the re-emitting semiconductor structure layer 1〇2 and the LP reflector 1〇6. The concentrator elements have an angular spread that reduces light impinging on the multilayer reflector Effect, thus reducing the blue shift of the reflection band discussed above in connection with Figures 7 through 9. The concentrator elements may take the form of simple conical sections having flat sidewalls, or the sidewalls may take a more complex curved shape, This is known to enhance the focus of the focus calibration action depending on the direction of travel of the light. In any event, the side walls of the concentrator elements are both reflective and the two ends (one end small 'one end large) are not. In Fig. 13, the light emitting diode 12 is disposed at the small end of the concentrator 100a. The concentrator element 〇〇a collects a wide range of light emitted by the illuminating diode, the range being reduced by the time that such light has traveled to the large end of the concentrator element 100a, and sp is mounted at the large end. Reflector 104. The SP reflector transmits uV excitation light to the concentrator element 100b, which concentrates such light on the re-emitting semiconductor layer 1 ( 2 (while increasing the angular spread of light by the re-emitting semiconductor structure layer 1 〇 2 downward emission width) The light range of the angular range 121656.doc • 28-200810156 is converted in the SP reflector 104 by the concentrator element 100b into a narrower angular range in which the light system is reflected back toward the re-emitting semiconductor structure layer 102. The excitation light leaking through the re-emitting semiconductor structure layer 1〇2 and the visible light emitted upward by the re-emitting semiconductor structure layer 102 initially have a wide angle diffusion, but are converted into a smaller angle diffusion by the concentrator element 100c. The device 1 6 will better transmit visible light emitted by the re-emitting semiconductor structure and reflect the excitation light back toward the re-emitting semiconductor structure layer.

To capture as much of the LED excitation light as possible, the small end of the concentrator element 10a may have a cavity to capture at least some of the light emitted by the side of the light-emitting diode, as shown in FIG. Additional Discussion The interference reflectors described herein comprise a reflector formed from a combination of organic, inorganic or organic materials. The interference reflector can be a multi-layer interference reflector. The interference reflector can be a flexible interference reflector. A flexible interference reflector can be formed using polymeric materials, non-polymeric or poly- and non-polymeric materials. Exemplary membrane systems comprising polymeric and non-polymeric materials are disclosed in U.S. Patent Nos. 6,010,751 and 6,172,8 (d) and Ep 733,919 A2, the entire disclosure of which is incorporated herein by reference. Use flexible Π: to form and itself can be pullable, plastic or variable = this can be added to the TM photo 2121656.doc -29- 200810156 known self-assembling periodic structures (such as cholesterol reflective polarizers and some Co-linked copolymers are considered to be multilayer interference reflectors for the purposes of this application. Cholesterol mirrors can be fabricated using one of the left and right hand pitch elements. In an illustrative embodiment, all wavelengths of blue light are partially transmitted. The pass filter can be used in combination with a thin yellow re-emitting semiconductor structure layer to direct some of the blue light from the light-emitting diode back to the first layer after passing through the re-emitting semiconductor structure The semiconductor structure layer is emitted.

In addition to the reflection of the uv light, one of the functions of the multilayer optical film may be to block the transmission of UV light in order to prevent degradation of subsequent elements inside or outside the package of the light-emitting diode, including protection against gross damage. In some embodiments, incorporating a uv absorber on the side of the uv reflector furthest from the light emitting diode may be advantageous. The uv absorber can be attached to, on or adjacent to the multilayer optical film. While various methods are known in the art for producing interference filters, a full polymer structure can provide several manufacturing and cost benefits. If a high-temperature polymer with high optical transmission and large refractive index difference is used in the interference reflector, it is possible to manufacture a thin and flexible environment-type filter and optical device to meet short-pass (SP) and remote transmission ( LP) Optical requirements for filters. In particular, the co-extrusion multi-layer interference device taught by 6,531,230 (Peace et al.) can provide accurate wavelength selection as well as large area, high cost efficiency: manufacturing. The use of each polymer pair with a high refractive index difference allows for the construction of high-reflection mirrors that are self-contained, #, without a substrate but that can be easily added: processing. Such interference structures will not crack, shatter, or otherwise degrade when heated or bent into a small radius of curvature of 121656.doc • 30-200810156. A fully polymeric filter can be heated to form various 3D shapes, such as a hemispherical dome (as explained below). However, the correct amount of thinning on the entire surface of the dome must be carefully controlled to establish the desired Shore performance. A filter with a simple two-dimensional curvature is easier to construct than a 3D composite shape filter. Any thin, flexible filter can be bent into shape, such as a portion of a cylinder, in which case a fully integrated chopper is not required. The multilayer inorganic interference filter on the thin polymeric substrate can be formed in this manner, as well as the inorganic multilayer on the glass substrate having a thickness of less than 2 μm. The latter may have to be heated to a temperature near the glass transition point to obtain a permanent shape with low stress. The optimum band edge of the remote and short pass filters will depend on the emission spectrum of the light emitting diode and the retransmission semiconductor structure in the system in which the filter is designed to operate. In an illustrative embodiment, for a short pass filter, substantially all of the emission of the light emitting diode passes through the filter to excite the re-emitting semiconductor structure, and the re-emitting semiconductor Substantially all of the emission of the structure is reflected by the filter, so that the emission does not enter the light-emitting diode or its substrate structure that can be absorbed. For this reason, the short-pass filter that defines the edge of the band The optical device is placed in a region between an average emission wavelength of the light emitting diode and an average emission wavelength of the re-emitting semiconductor structure. In an illustrative embodiment, the filter is placed between the light-emitting diode and the re-emitting semiconductor structure, and the light-receiving device is planar, from a typical light-emitting diode. The emission will impact the filter at various angles and will be reflected by the filter at an angle of incidence of 121656.doc -31 - 200810156 and fail to reach the re-emitting semiconductor structure. Unless the filter is bent to maintain an almost constant angle of incidence, it may be desirable to place the design band edge at a wavelength greater than the midpoint of the re-emitting semiconductor structure and the emission curve of the LED. Total system performance. In particular, a small portion of the emission of the re-emitting semiconductor structure is directed to the filter near the zero angle of incidence because the included solid angle is small. In another illustrative embodiment, a remote reflective filter is disposed from the light emitting diode opposite the re-emitting semiconductor structure to recirculate the light emitting diode excitation light back to the re-emitting semiconductor structure In order to improve system efficiency. In an illustrative embodiment, a remote pass filter can be omitted if the light emitting diode emits in the visible spectrum and requires a large amount of emission to balance the color output of the re-emitting semiconductor structure. However, one of the remote transmission filters that partially transmit short-wave light (eg, blue light) can be used to optimize a blue light-emitting diode via a spectral angular offset that transmits more blue light at an angle greater than the normal angle of incidence. The angular performance of the yellow re-emitting semiconductor structural system. In another illustrative embodiment, the LP filter is bent to maintain an almost constant angle of incidence of the emitted light from the light emitting diodes on the filter. In this embodiment, the re-emitting semiconductor structure and the light emitting diode face one side of the LP filter. At high angles of incidence, the lp filter will not reflect short-wave light. For this reason, the long wavelength band edges of the LP filter can be placed at as long a wavelength as possible while preventing as little emission as possible of the re-emitting semiconductor structure. In addition, band edge placement can be changed to optimize overall system efficiency. 121656.doc -32- 200810156 The term π adjacent '' is defined herein as the relative position of two items indicating proximity to each other. Adjacent items may be in contact with each other or separated from one another, with one or more materials disposed between the adjacent items. The excitation light of the light-emitting diode can be any light that can be emitted from a source of the light-emitting diode. The excitation light of the light-emitting diode can be UV or blue light. Blue light also contains purple and neon blue light. The light-emitting diode comprises a spontaneous emission device and a device using stimuli or super-radiation emission, including a laser diode and a vertical cavity surface emitting laser diode. The re-emitting semiconductor structural layers described herein may be continuous or discontinuous layers. The layer of re-emitting semiconductor structural material may be a uniform or non-uniform pattern. The layer of re-emitting semiconductor structural material may be a plurality of regions having a small area. In an illustrative embodiment, the plurality of regions may be formed by re-emitting a semiconductor structure that emits visible light at one or more different wavelengths, such as a red-emitting region, a blue-emitting region, and One area of green light is emitted. The area where visible light is emitted at a plurality of wavelengths can be configured and configured in any uniform or non-uniform manner as desired. For example, the layer of re-emitting semiconductor structural material can be a plurality of regions having a non-uniform cost gradient along the surface or region. These areas can have any rule or irregular shape. Ζ Configure the structured re-emitting semiconductor structure layer in a right-handed manner to provide performance benefits as described below. When multiple types of re-emitting semiconductors are fabricated to provide a wider and more comprehensive (four) transmission (four), re-emitting semiconductor junctions can be reabsorbed from shorter wavelengths by other re-emitting semiconductor structures, including each re-emitting semiconductor structure type. The isolation line or isolation 121656.doc -33 - 200810156 The pattern of the area reduces the amount of reabsorption. This will be particularly effective in cavity-type structures in which unabsorbed pump light is reflected back to the re-emitting semiconductor structure pattern. Specific embodiments are disclosed herein, wherein the first optical component includes a re-emitting semiconductor structure/reflector assembly that can be attached to a light emitting diode substrate; a heat sink that optionally includes the re-emitting semiconductor structure layer And a transparent heat sink to which the interference filter can be attached. The transparent heat sink may be disposed in a sapphire layer between the re-emitting semiconductor structure layer/interference filter and the light emitting diode substrate. Most glasses have a higher thermal conductivity than polymers and can also be used for this function. Many other crystalline materials have higher thermal conductivity than most glasses and can therefore be used herein. The sapphire layer can be contacted by metal fins at the edges. The service life of the SP or LP irradiator is preferably greater than or equal to the service life of the illuminating body in the same system. Degradation of a polymeric interference filter may be due to overheating, which may cause material creep to change the layer thickness value and thus the wavelength reflected by the filter. In the worst case, overheating may cause the polymer material to melt, resulting in rapid flow of material and variations in wavelength selection and causing non-uniformities in the filter. Degradation of the polymeric material can also be caused by short wavelength (actinic) radiation (e.g., blue, violet, or UV radiation, depending on the polymeric material). The rate of degradation depends on the actinic flux and the temperature of the polymer. The temperature and the flux generally decrease as the distance from the light emitting diode increases. Therefore, in the case of high-brightness light-emitting diodes (especially UV-emitting diodes), it is advantageous to place the polymerization concentrator as far as possible from the design of the illuminating 121656.doc -34-200810156 diode. . The placement of the polymer filter on the transparent heat sink as described above can also improve the useful life of the filter. For a dome filter, the flux of actinic radiation decreases with the square of the distance from the light-emitting diode. For example, a hemispherical 汹〇1 reflector placed with a one-way 丨 watt light-emitting diode at the center of curvature and having a radius of 1 em will experience an average intensity of 1/(2π) watts/cm 2 (surface area of the dome (10) 2) . At a radius of 5 cm, the average intensity on the dome will be four times this value, or 2/π W/cm2. Light-emitting diodes, re-emitting semiconductor structures, and multilayer optical film systems can be designed with light flux and temperature control in mind. A reflective polarizer can be disposed adjacent to and/or adjacent to the multilayer reflective device. The reflective polarizer causes a better polarized light to be emitted while reflecting another polarized light. The re-emitting semiconductor structure layer and other film components known in the art can depolarize the polarized light reflected by the reflective polarizer and re-emitted by the re-emitting semiconductor structure layer or combined with the multilayer reflector The semiconductor structural layer, the light can be recycled and the brightness of the polarized light of the solid state light device (LED) is increased. Suitable reflective polarizers include, for example, a cholesterol reflective polarizer, a cholesterol reflective polarizer with a quarter wave reducer, a DBEF reflective polarizer available from 3M Company, or a DRPF reflective polarized light commercially available from 3M Company. Device. The reflected polarized light preferably emits light from the re-emitting semiconductor structure within a substantial range of polarization wavelengths and angles, and also reflects the emission wavelength range of the light-emitting diode in the case where the light-emitting diode emits blue light. A suitable multilayer reflector film is a birefringent multilayer optical film in which the refractive indices in the thickness direction of two adjacent layers are substantially matched and have a curvature of 121656.doc -35 - 200810156 (P-polarized light reflection) The angle at which the coefficient becomes zero) is very large or non-existent. This allows the construction of a multilayer mirror and a polarizer whose reflectance of P-polarized light decreases slowly with the angle of incidence, regardless of the angle of incidence, or increases with the angle of incidence that is offset from the vertical. Therefore, it is possible to achieve a multilayer film having high reflectance in a wide frequency band (two planes of polarization for any incident direction in the case of a mirror, and a direction of selection for a polarizer). These polymeric multilayer reflectors comprise alternating layers of first and second thermoplastic polymers. The alternating layers define a local coordinate system in which mutually perpendicular X and y axes extend parallel to the layers and the z-axis is perpendicular to the axis, and wherein at least some of the layers are birefringent. For light polarized along the first, second, and second mutually perpendicular axes, the absolute values of the difference in refractive index between the first layer and the second layer of the first polarized light are Δχ, 々, and Δζ, respectively. The third axis is perpendicular to the plane of the film, wherein the Δχ system is greater than about 〇〇5, and wherein the Δζ system is less than about 〇·05. Such membranes are described, for example, in U.S. Patent No. 5,882,774, incorporated herein by reference. Figure 15 is a schematic cross-sectional view of another embodiment (device 21A) of the present disclosure. The non-planar multilayer reflector 224 is shown adjacent to the re-emitting semiconductor structure 222, however, it is only necessary to secure the non-planar multilayer reflector 224 so that light can travel between the re-emitting semiconductor structure 222 and the multilayer reflector 224. The non-planar multilayer reflector 224 reflects the illuminating light (e.g., UV or blue light) of the light emitting diode and transmits visible light. This non-planar multilayer reflector 224 may be referred to as a remote pass (LP) reflector, as explained above. The above configuration can be disposed within an optically transparent material 220. The non-planar multilayer reflector 224 can be secured to receive light from a light emitting diode 121656.doc-36 - 200810156 212, as discussed herein. The non-planar multilayer reflector 224 can have any useful thickness. The non-planar polymeric multilayer reflector 224 can be 5 to 2 microns thick or ίο to 1 μm thick. The non-planar multilayer reflector 224 can be substantially free of inorganic material as desired. The non-planar multilayer reflector 224 can be formed from a material that resists degradation when exposed to UV, blue or violet light such as discussed herein. The multilayer reflectors discussed in this article can be extended for extended periods of time under high intensity illumination. High intensity illumination can generally be defined as a flux level from 1 to 1 watt/cm2. The operating temperature in the interfering reflector can be 1 〇〇χ: or lower, or 65 ° C or lower. Suitable illustrative polymeric materials can include, for example, acrylic materials, PET materials, PMma materials, polystyrene materials, polycarbonate materials, THV materials available from 3M Company, St. Paul, Minnesota, and combinations thereof. Formed anti-uv material. These materials and pEN materials can be used for blue excitation light. The non-planar multilayer reflector 224 can have a non-uniform thickness or a thickness gradient along its length, width, or both. The non-planar multilayer reflector 224 can have a first thickness in the inner region 223 of the non-planar multilayer reflector 224 and a second thickness in the outer region 225 of the non-planar multilayer reflector 224. The difference in thickness across the surface of the reflector is associated with a corresponding difference or offset in spectral reflectance, with the thinner regions being blue-shifted relative to the thicker regions. There are various ways in which a thickness gradient can be established. For example, the thickness gradient can be formed by heat forming, embossing, laser embossing, or extrusion. As shown in FIG. 15, the thickness of the inner region 223 may be greater than the thickness of the outer region 225 121656.doc -37.200810156. The thickness of the inner region 223 of the booster port can reduce the undesirable effect of the "halo effect". "Halo effect, a problem known in the industry, wherein the balance of blue excitation light and yellow conversion light varies as a function of the viewing angle of the light emitting diode. Herein, the thickness of the inner region M3 may be greater than the thickness of the outer region 225 to reduce axial blue transmission. As shown, the thickness of the outer region 325 can be greater than the thickness of the inner region 323. The above configuration can be disposed within an optically transparent material 32〇. The non-planar multilayer reflector can be mounted with any of the light emitting diodes in any of the available configurations, as described herein. In an illustrative embodiment, a non-planar multilayer reflector is attached between the re-emitting semiconductor structure and the light emitting diode (see, for example, Figure 17). In another illustrative embodiment, the re-emitting semiconductor structure is secured between the non-planar multilayer reflector and the phosphor side (see, for example, Figures 15, 16). The non-planar multilayer reflective state 224/324 can be configured to reflect or blue light and transmit at least a portion of the visible light spectrum (e.g., green, yellow, or red light). In another illustrative embodiment, the non-planar multilayer reflector 224/324 can be configured to reflect uv, blue or green light and transmit at least a portion of the visible light spectrum (e.g., yellow or red light). The re-emitting semiconductor structures 222/322 are capable of emitting visible light when illuminated with excitation light emitted from a light emitting diode 212/312. The re-emitting semiconductor structural material can be any useful thickness. Figure 17 is a schematic cross-sectional view showing another embodiment 4 of the apparatus. A non-planar reflector 4 6 6 is shown adjacent to the re-emitting semiconductor junction 121656.doc -38 - 200810156 422, however only the non-planar multilayer reflector needs to be fixed so that light can be at the re-emitting semiconductor structure 422 and the non- The planar multilayer reflector 426 travels between. The non-planar multilayer reflector 426 reflects visible light and transmits excitation light (e.g., uv or blue light) of the light emitting diode. This non-planar multilayer reflector 426 may be referred to as a short pass (SP) reflector, as explained above. The above configuration can be disposed within an optically transparent material 420. The non-planar reflector 426 can comprise the same material as the non-planar multilayer reflector 424 described above and is formed in a similar manner thereto. The re-emitting semiconductor structure layer 422 is also described above. The non-planar multilayer reflector 426 can be fixed with the light emitting diode 412 in any of the available configurations, as illustrated herein. In an illustrative embodiment as shown in FIG. 17, a non-planar multilayer reflector 426 is secured between the re-emitting semiconductor structure 422 and the light-emitting diode 412. In another illustrative embodiment, re-emitting semiconductor structure 422 is secured between non-planar multilayer reflector 426 and light emitting diode 412. In an illustrative embodiment, the non-planar multilayer reflector 426 is directed toward the hemispherical concave of the LED 412. Such a design allows light emitted by the LEDs 412 to strike the non-planar multilayer reflector 426 at a vertical or near vertical angle of incidence. The non-planar geometry of the multilayer reflector 426 allows substantially all of the short-wavelength light to pass through the non-planar multilayer reflector 426, regardless of the side or direction of the short-wave light from the LED 412. - Figure 18 is a schematic cross-sectional view of another embodiment 51 of the apparatus. A first non-planar multilayer reflector 524 is shown separated from a re-emitting semiconductor structure 522, however, only the first non-planar multilayer reflector ^ 121656.doc -39 - 200810156 needs to be fixed so that light can be re-emitted in the semiconductor structure 522. Traveling between the first non-planar multilayer reflective benefit 524. The first non-planar multilayer reflector 524 reflects the excitation light (e.g., UV or blue light) of the light emitting diode and transmits visible light. This first non-planar multilayer reflector 524 can be referred to as a remote pass (LP) reflector, as explained above. The above configuration can be disposed within an optically transparent material 52A. A second non-planar multilayer reflector 526 is shown adjacent to the re-emitting semiconductor structure material 522, however only the second non-planar multilayer reflective benefit 526 needs to be fixed so that light can be at the re-emitting semiconductor structural material 522 and the second non- The planar multilayer reflector 526 travels between. The second non-planar multilayer reflector 526 reflects visible light and transmits excitation light (e.g., uv or blue light) of the light emitting diode. This second non-planar multilayer reflector 526 can be referred to as a short pass (sp) reflector, as explained above. A re-emitting semiconductor structure 522 is shown disposed between the first non-planar polymeric multilayer reflector 524 and the second non-planar polymeric multilayer reflector 526. The re-emitting semiconductor structure layer 522 has been described above. Figure 19 is a schematic cross-sectional view of another embodiment 61 of the apparatus. A first non-planar multilayer reflector 624 is shown adjacent to a re-emitting semiconductor structure material 622, however, it is only necessary to secure the first non-planar multilayer reflector 624 such that light can be at the re-emitting semiconductor structural material 622 and the first non- The planar multilayer reflector 624 travels between. The first non-planar multilayer reflector 624 reflects the excitation light (e.g., uv or blue light) of the light emitting diode and transmits the visible light. This first non-planar multilayer reflector 624 may be referred to as a remote pass (LP) reflector, as explained above. The above configuration can be disposed within an optically transparent material 620. 121656.doc -40- 200810156 A second non-planar multilayer reflector 626 is shown adjacent to the re-emitting semiconductor structure material 622, however only the second non-planar multilayer reflector 626 needs to be fixed so that light can be in the re-emitting semiconductor structure Material 622 travels between the parent and the non-planar multilayer reflector 626. The second non-planar multilayer reflector 626 reflects visible light and transmits excitation light (e.g., uv or blue light) of the light emitting diode. This non-planar multilayer reflector 626 can be referred to as a short pass (j§p) reflector, as explained above.

A plurality of repeatedly emitting semiconductor structure layers 622 are shown disposed between the first non-planar multilayer reflector 624 and the second non-planar multilayer reflector 626. The re-emitting semiconductor structure layer 622 has been described above. The device according to the invention may be a key component of a component or a graphics display device, such as a large or small screen video monitor, a computer monitor or display, a television, a telephone device or a telephone device display, a personal digital assistant or Personal digital assistant display, pager or pager display, calculator or monitor display, game console or game console display: with or with a toy display, large or small appliances or large or small appliance display, car dashboard or car Dashboard display, car interior or car interior display, ship dashboard or ship dashboard display, ship interior or ship, internal display, route board or aeronautical instrument panel display, aviation one: or internal aircraft display, traffic control The device or traffic control device is not fast, advertising display, advertising mark, and the like. The device according to the present invention may be, or may be, or a liquid crystal display (LCD), a key component of a similar display that is backlit. In a 'body embodiment', a semiconductor device according to the present invention is configured by matching a color emitted by a semiconductor device according to the invention of 121656.doc-41-200810156 with a color illuminator of a light-emitting diode display. Special _ for the backlight of the H曰曰 display.

According to the invention, the key component of the component or the illuminating device: 'the makeup device such as a stand-alone or built-in lighting fixture or lamp, a landscape or a built-in fixture, a hand-held or vertical mounting lamp, a front of the car Lights or taillights, in the car "Ming n car or non-vehicle signal device, road lighting control signal farm, ship lamp or signal device or internal lighting solid - aerial light or ^ device or internal lighting fixture, large or Gadgets are large or small ☆ with lights, etc.; or any device or component used as a source of infrared, visible or ultraviolet radiation. The present invention is not limited to the illustrative embodiments set forth above. It is to be understood that the invention is not to be construed as limited to the details. [Simple description of the map]

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a plan view of a semiconducting layer in a structure of a specific embodiment of a conductive band and a valence band according to the present invention. The layer thickness is not a proportionality of the lattice constants of the compound and its alloys. FIG. 2 is a graph showing various and band gap energies; FIG. 3 is a graph showing the spectrum of light emitted from the light according to the present invention; One device transmits a semi-conducting flat band diagram in one of the configurations of the specific embodiment. The thickness of the layer is not to scale. FIG. 4 shows the conduction band of the body and the valence of the cheek band according to the present invention; FIG. 5 is a schematic cross-sectional view of the device according to one of the disclosures; Figure 6 is a cross-sectional view of a re-emitting semiconductor structure assembly for use in the mounting of Figure 4; Figures 7 through 9 are cross-sectional views of the power device in accordance with the present disclosure; Figure 11 is a cross-sectional view of another apparatus in accordance with the present disclosure; Figure 12 is a schematic side elevational view of another apparatus utilizing front surface illumination, as in the embodiment of Figure 10;

Figure 13 is a schematic side elevational view of a device configured using one of the non-imaging concentrators, Figure 14 is a close-up view of a portion of Figure 12; and Figures 15 through 19 are schematic cross-sectional views of other embodiments of the present disclosure 0 [Description of main component symbols] 1-14 Layer 14, heat sink 18 Material 20 Projection surface 22 Re-emitting semiconductor structure 24 LP reflector 26 SP reflector 40 Device 42 Re-emitting semiconductor structure layer 44 SP reflector 121656.doc • 43· 200810156

46 LP reflector 48 region 50 \ device 52 re-emitting semiconductor structure layer 54 SP reflector 56 LP reflector 60 device 66 LP reflector 70 air gap 72 re-emitting semiconductor structure layer 74 SP reflector 80 device 82 re-emitting semiconductor structure layer 84 SP reflector 86 LP reflector 92 re-emitting semiconductor structure layer 96 LP reflector 100a concentrator element 100 b concentrator element 100c concentrator element 102 re-emitting semiconductor structure layer 104 SP reflector 106 LP reflector 210 device 121656.doc -44- 200810156 212 Light Emitting Diode 220 Optically Transparent Material 222 Re-emitting Semiconductor Structure 223 Internal Area 224 Non-planar Multilayer Reflector 225 External Area 312 Light Emitting Diode 320 Optically Transparent Material 323 Internal Area 324 Non-planar Multilayer Reflector 325 Exterior Region 410 device 412 light emitting diode 420 optically transparent material 422 re-emitting semiconductor structure 426 non-planar multilayer reflector 510 device 520 optically transparent material 522 re-emitting semiconductor structure 524 first non-planar multilayer reflector 526 second non-planar multilayer reflector 610 620 optically transparent material 622 re-emitting semiconductor construction material 121656.doc -45- 200810156 624 first non-planar multilayer reflector 626 of the second non-planar multilayer reflector 121656.doc -46-

Claims (1)

200810156 X. Patent Application Scope 1. A device comprising: a) a light emitting diode capable of emitting light at a first wavelength; b) a re-emitting semiconductor structure comprising not being positioned at a splicing surface a potential well within; and • c) a reflector that is positioned to reflect light emitted from the light emitting diode onto the re-emitting semiconductor structure. 2. The device of claim 1, wherein the re-emitting semiconductor structure additionally comprises: an absorber layer in close proximity to or immediately adjacent to at least one of the at least one potential well. The device of claim 1, wherein the at least one potential well comprises a quantum well. 4. The device of claim 1, wherein the reflector is a multilayer reflector. 5. The device of claim 1, wherein the reflector is a non-planar flexible multilayer reflector. I. The device of claim 1, wherein the reflector is a reflective polarizer layer. A drawing display device comprising the device of claim 1. _ 8 • A beta month device that includes a device such as a request for an item. 9. The device of claim 1, wherein the re-emitting semiconductor structure is capable of emitting light at a second wavelength, and wherein the reflector reflects light at the first wavelength and transmits light at the second wavelength. 10. The device of claim 9, wherein the reflector is an interference reflector positioned to be in close proximity to the re-emitting semiconductor structure; and wherein the device additionally includes adjacent to the re-emitting semiconductor structure a TIR promoting layer having a 121656.doc 200810156 index of refraction at the first wavelength and a second index of refraction less than the first index of refraction at the second wavelength. a device comprising: a) a light emitting diode capable of emitting light at a first wavelength; b) a re-emitting semiconductor structure capable of emitting light at a second wavelength, comprising not being positioned At least one potential well within a pn junction; and c) a reflector that transmits light at the first wavelength and reflects at least a portion of the light at the second wavelength. 12. The device of claim 11, wherein the re-emitting semiconductor structure additionally comprises an absorber layer in close proximity or immediately adjacent to at least one of the at least one potential well. 13. The apparatus of claim 1, wherein the at least one potential well comprises a quantum well. 14. A device according to the invention, wherein the position of the reflector is fixed between the light-emitting diode and the re-emitting semiconductor structure. 15. The device of claim 11, wherein the reflector is a multilayer reflector. 16. The device of claim 11, wherein the reflector is a non-planar flexible multilayer reflector. 17. A drawing display device comprising a device as claimed. 18. A device for display, comprising the device of claim 11. A device comprising: a) a semiconductor unit comprising: a first potential well located in a Pn junction, comprising a light emitting diode capable of emitting light at a first wavelength; and 121656 .doc -2- 200810156 U) a second potential well not positioned within the Pn junction, comprising a re-emitting semiconductor structure; and b) a reflector 'position fixed to be emitted from the light emitting diode Light is reflected onto the re-emitting semiconductor structure. 20. The device of claim 19, wherein the re-emitting semiconductor structure additionally comprises an absorber layer in close proximity or immediately adjacent to at least one of the at least one potential well. 21. The device of claim 19, wherein the at least one potential well comprises a quantum well. 22. The device of claim 19, wherein the re-emitting semiconductor structure is capable of emitting light at a first wavelength, and wherein the reflector reflects light at the first wavelength and transmits light at the second wavelength. The device of claim 22, wherein the reflector is an interference reflector positioned to be in close proximity to the re-emitting semiconductor structure; and wherein the device additionally includes a liquid adjacent to the re-emitting semiconductor structure And a TIR promoting layer having a first refractive index at the first wavelength and a second refractive index lower than the first refractive index at the second wavelength. 24. The device of claim 19, wherein the reflector is a multilayer reflector. 25. The device of claim 19 wherein the reflector is a non-planar flexible multilayer reflector. 9-26. The device of claim 19, wherein the reflector is a reflective polarizer layer. 27. A drawing display device comprising the device of claim 19. 28. A lighting device comprising the device of claim 19. 121656.doc