TW200807769A - LED device with re-emitting semiconductor construction and optical element - Google Patents

Abstract

A light source includes an LED component having an emitting surface, and an optical element having an input surface in optical contact with the emitting surface. The LED component may be or include an LED such as an LED die capable of emitting light at a first wavelength, in combination with a re-emitting semiconductor construction which includes a second potential well not located within a pn junction. The optical element can be an extractor whose shape is converging, diverging, or a combination thereof.

Description

200807769 IX. Description of the invention: [Technical field to which the invention pertains] The present invention relates to a light source. More particularly, the present invention relates to a light source comprising a light emitting diode (LED) as described herein, a re-emitting semiconductor composition, and an optical component (e.g., a picker). [Prior Art] A light-emitting diode (LED) is a solid-state semiconductor device that emits light when a current is transferred between an anode and a cathode. A conventional light-emitting diode includes a single splicing surface. The pn junction may comprise an intermediate undoped region, and this type of splicing surface may also be referred to as a tip junction. Like a non-emitting semiconductor diode, a conventional light-emitting diode can more easily transfer current in one direction (i.e., in a direction in which electrons move from the n-region to the p-region). When the current passes through the light diode in the "forward direction", the electrons from the η region and the holes from the ρ region recombine the /: photons are generated. Light emitted by a conventional light-emitting diode It is monochromatic in appearance, that is, it is produced in a single narrow frequency band of wavelengths. The emitted wavelength corresponds to the energy associated with recombination of electrons and holes. In the simplest case, the energy Is close to the band gap energy of the semiconductor in which the recombination occurs. The conventional light emitting diode may additionally include one or more quantum on the pη junction: it captures a high concentration of electrons and holes 'to thereby reproduce the light 2. Several investigators have attempted to produce a light-emitting diode device that emits white light or a white-colored sensation that appears to the naked eye. Some investigators report that there is a design or fabrication of multiple quantums in the junction. In the junction, a plurality of quantum well systems are expected to emit light at the same wavelength as 121770.doc 200807769. The following references may be related to such techniques: U.S. Patent No. 5,851,905; U.S. Patent No. 6,303,404; U.S. Patent 6,504,171; U.S. Patent No. 6,734,467; Damilano et al., Single-Piece White Light-Emitting Diode Based on InGaN/GaN Multiple Quantum Wells, JPn J. Applied Physics, Vol. 40 (2001), pp. L918-L920; Yamada Et al. 'High-efficiency white light-emitting diodes composed of InGaN multiple quantum wells without re-emitting semiconductor structures, Jpn. J. Applied Physics, Vol. 41 (2002), pp. L246 to L248; Dalmasso et al. Injection contrast of electroluminescence spectra of GaN-based white light-emitting diodes containing re-emitting semiconductor structures, phys. stat. sol. (a) 192, No. 1, pp. 139-143 (2003). Some investigators report the alleged design or fabrication of a light-emitting diode device combining two conventional light-emitting diodes that are expected to independently emit light at different wavelengths in a single device. Such techniques are related to: U.S. Patent No. 5,851,905; U.S. Patent No. 6,734,467; U.S. Patent Publication No. 2002/0041148 A1; U.S. Patent Publication No. 2002/0134989 A1; Luo et al., integrated full color and white Light emitter Patterned three-color ZnCdSe/ZnCdMgSe quantum well structure, Applied Physics Papers, Vol. 77, No. 26, pp. 4259 to 4261 (2000). Some investigators reported the alleged design or manufacture of light-emitting diode devices. The device combines a conventional light-emitting diode element with a chemically re-emitting semiconductor structure, such as yttrium aluminum garnet (YAG), which is intended to absorb a portion of the light emitted by the light-emitting diode element and Then emit longer wavelength light. U.S. Patent No. 5,998,925 and U.S. Patent No. 6,734,467, the disclosure of which is incorporated herein by reference. Some investigators report the alleged design or fabrication of light-emitting diodes grown on a ZnSe substrate that is n-doped with HCHGan to create a fluorescent center in the substrate that is expected to be absorbed by the luminescence One of the light emitted by the diode element partially re-emits a longer wavelength of light. U.S. Patent No. 6,337,536 and Japanese Patent Application Publication No. 2004-072047 may be related to such technology. U.S. Patent Publication No. 2005/0023545 (Camras et al.) is incorporated herein by reference. SUMMARY OF THE INVENTION The present application further discloses a light source comprising a light-emitting diode assembly having an emitting surface, the light-emitting diode assembly can be or include: a light-emitting diode, which can be a wavelength illuminating; and (1) a re-emitting semiconductor construction comprising a second potential well not positioned within a splicing surface. The light emitting diode and the re-emitting semiconductor structure can be part of a single-die or wafer, wherein the light-emitting diode system is associated with a first potential well positioned within a junction, and the The emitted semiconductor structure is associated with a second potential well that is not positioned within the _pn junction. Alternatively, the light emitting diode and the re-emitting semiconductor construction may be separated: a portion 'providing a light path between the two portions via one or more other light transmissive components. The disclosed light source also preferably includes an optical component having an input surface and an output surface that is in optical contact with the light emitting diode and the surface of the component. Such an emitting surface may be one of the surface of the illuminating-polar body or the surface of the re-emitting semiconductor structure, but in many cases 121770.doc 200807769 it is a relatively high refractive index material-surface, such as a semiconductor Materials or other substrate materials such as Si, Ge, GaAs, inp, sapphire, S!C, ZnSe, and the like. In order to enhance the coupling of light from the LED assembly, the optical element preferably has a relatively high refractive index, for example at least i 7, i · 8, in the case of the wavelength of light emitted by the LED. I.9, '2.1, 2.3 or 2. 4 or larger. The optical component can be an encapsulant formed on the LED assembly and substantially surrounding the LED assembly (or its phantom, which can be a " picker A picker system, separately fabricated and then in contact with or in proximity to a surface of a light emitting diode assembly to couple or extract light from the surface and reduce the amount of light captured within the assembly. The picker or another The optical element can have a diverging shape to partially calibrate the "or converging shape" collected on the input surface to direct light collected on the input surface to a side emission pattern. The light source additionally includes a patterned low refractive index layer in contact with the first knive photon of the emitting surface, the patterned layer: having a refractive index; and the input surface of the optical component is: a second portion of the surface is in optical contact, the optical element having a second refractive index above the first index of refraction. In some embodiments, the light:: externally included for use by the light emitting diode assembly At least : the interior of the king is reflected back to the component in the light emitting diode assembly, the reflective member being in optical contact with the first portion of the emitting surface; the input surface of the optical component being different from the first portion The first portion is optically contacted. In some embodiments, the optical component comprises 121770.doc 200807769 - the first portion - which includes the input surface and is comprised of a first material, the optical component also including a a second portion comprising the output surface and consisting of a second material; and wherein the first material has a refractive index greater than a refractive index of the second material. In some specific implementations, the optical component is plural Each of the optical elements has an input surface; wherein the f optical elements are sized such that the input surfaces are spaced apart from each other and are in optical contact with different portions of the light emitting surface. In a specific embodiment, the optical element has a substrate, two converging sides, and two diverging sides, wherein the substrate is optically lying on the emitting surface. In some embodiments, the optical component is optically coupled to the light emitting diode assembly and shaped to direct light emitted by the light emitting diode assembly to produce a side emission pattern having two lobes. In some embodiments, the optical component includes a substrate, a vertice smaller than the substrate, and a converging side extending between the substrate and the apex, wherein the substrate is optically coupled to the emitting surface and Not larger than the emitting surface; and wherein the optical element directs light emitted by the light emitting diode assembly to produce a side emitting pattern. In some embodiments, the optical element includes n, a page point, and Bonding a convergence side of the apex of the substrate, and the substrate is optically coupled to the emitting surface, and the optical component includes a first segment comprising the substrate and consisting of a first material, and a second A segment that includes the apex and is composed of a second material. In some embodiments, the optical element has a first index of refraction and has a substrate, an apex, and a 121770.doc 200807769 convergent side joining the substrate to the apex, the substrate being optically coupled to the emitting surface And not greater than the emission surface in size, the light source also includes a second optical component encapsulating the LED assembly and the first named optical component, the second optical component having a lower refractive index than the first refractive index a second refractive index. In some specific embodiments, the optical element has a first index of refraction and has a substrate, a apex that resides on the emitting surface, and a convergent side of the substrate that joins the substrate and the apex. Optically coupled to the emitting surface, the light source also includes an optical component encapsulating the light emitting diode component and the first named optical component, the second optical component having a second refractive index lower than the first refractive index . In some embodiments, the light emitting diode assembly and a second optical component of the first optical component are provided from the light emitting diode compared to the power drawn by the first optical component alone The increase in power drawn by the component. In some embodiments, the optical component includes a substrate, a vertex, and a side joining the substrate to the apex, wherein the substrate is optically coupled to the emissive surface and mechanically coupled therefrom. A graphic display device and a lighting device including the disclosed light emitting diode device are also described. These and other aspects of the present invention will be apparent from the following detailed description. However, the above summary should in no way be considered as limiting the claimed subject matter, which is defined only by the scope of the appended claims, which can be modified during the prosecution. In this application: Regarding the layer stack in a semiconductor device, "immediately adjacent" means that in the absence of the intermediate layer of 121770.doc -11 - 200807769, the next one, "closely adjacent, means that there is one In the case of several intermediate layers, the next one, and "around," means before and after the sequence; ''potential well'' means a semiconductor layer in a semiconductor device having a lower conduction band than the surrounding layer Energy or valence band energy higher than the surrounding layer, or both; "quantum wells" means a potential well that is sufficiently thin (usually 1 〇〇nm

Or smaller so that the quantization effect increases the electron and hole pair energy in the well; π-transition energy means that electrons and holes recombine energy; ''lattice matching' means that two crystal materials are referenced (eg An epitaxial film on a substrate), each material taken in the isolation has a lattice constant 'and these lattice constants are substantially equal, and the 胄 often differs by at most 0.2% from each other' more often at most 〇1%, and most often at most 0. 01%, and "false crystal" means, referring to one of the given thicknesses of the first crystalline layer and a second crystalline layer (eg, the epitaxial layer and a substrate) Each of the layers taken in the isolation has a lattice constant, and the lattice constants are substantially similar so that the first layer having a thickness of germanium can be a layer having substantially no mismatch defects. The lattice spacing of the second layer in the plane. In the context of any of the disclosed embodiments including the η-doped and erbium-doped semiconductor regions, another embodiment should be considered as disclosed herein, wherein the erbium doping is exchanged with dopants. vice versa. It should be understood that in this paper, "potential well", "first potential well", "second electric 121770.doc -12-200807769 well π and " complex φ > In one case, a single unit can be provided that provides multiple potentials that generally share similar characteristics. 'should be understood' in this document "quantum well", "first, quantum wells, and "third In the case of a quantum co-quote, a parent-child, a single-: sub-well or a plurality of quantum wells that generally share similar characteristics. [Embodiment]

The present application discloses a lighting device comprising: a light emitting diode assembly comprising an emitting diode in combination with a re-emitting semiconductor structure and an optical surface of an emitting surface of a light emitting diode assembly Or the light of the photon coupling. Preferably, the optical element has a relatively high refractive index to enhance illumination from the group of light-emitting diodes (4), and preferably or comprises a picker but may also be or comprise a package. Generally, the light-emitting diode is capable of emitting light at a first wavelength and the re-emitting semiconductor structure is capable of absorbing light at the first wavelength and re-emitting light at a second wavelength. The semiconductor structure of the mouth re-hairing includes a potential well that is not positioned in a junction. The potential wells of the re-emitting semiconductor construction are typically, but not necessarily, quantum wells. In a typical operation, the photodiode emits photons in response to a current and the re-emitting semiconductor structure emits photons in response to absorption of a portion of the photons emitted from the LED. The re-emitting semiconductor construction may additionally include an absorbing layer adjacent to or adjacent to the potential well, if desired. The absorber layer typically has a band gap energy that is less than or equal to the energy of the photons emitted by the light emitting diode and greater than the transition energy of the potential well of the reemitting semiconductor structure. In a typical operation, the absorbing layer 121770.doc -13-200807769 assists in absorbing photons emitted from the luminescent diode. The re-emitting semiconductor construction can additionally include at least one second potential well not positioned within a pn junction having a second transition energy that is not specific to the transition energy of the first potential well. In some embodiments, the light emitting diode system is a uv light emitting diode. In one such embodiment, the re-emitting semiconductor construction includes at least one first potential well not positioned within a pn junction having a first transition energy corresponding to blue wavelength light; not positioned At least one second potential well within a pn junction having a second transition energy corresponding to green wavelength light; and at least one third potential well not positioned within the pn junction having 'corresponding to red wavelength light A third transformation energy. In some embodiments, the light-emitting diode of a light-emitting diode is generally a green, blue or purple light-emitting diode, more usually a green or blue light-emitting diode, and most Usually a blue light emitting diode. In a specific embodiment, the re-emitting semiconductor construction includes at least one first potential well not positioned within a pn junction having a yellow light corresponding to yellow or green wavelength light (more typically green wavelength light) a first transition energy; and at least one second potential well not positioned within a pn junction having a second transition energy 对应 corresponding to orange or red wavelength light, more typically red wavelength light. The 5H re-emitting semiconductor construction may include additional potential wells and additional absorber layers. In some embodiments, the light emitting diode has only one splicing surface, and the re-emitting semiconductor construction has only one potential well that is not positioned within a splicing surface, the potential well having a corresponding One of the green wavelength lights converts energy. In such cases, the light-emitting diode emits light at a wavelength shorter than the green wavelength of 121770.doc -14-200807769 (eg, blue, violet, or uv light wavelength) and the re-emitting semiconductor The configuration can be applied and grown in a single fabrication step or program on a single wafer using known semiconductor processing techniques. The LED and the re-emitting semiconductor construction preferably utilize the same combination of materials. For example ZnSe. Alternatively, the light emitting diode and the re-emitting semiconductor construction can be grown or fabricated in a separate process and then bonded together with a bonding agent, or otherwise cut into individual grains (in application corresponding to a luminescence) One or both of the optical elements or optical element arrays of a light-emitting diode array formed in the diode wafer. In another aspect, the light emitting diode and the re-emitting half-body configuration can remain separate, such as with or otherwise coupled or coupled to different surfaces of a picker or another optical component. Any suitable light emitting diode can be used. The elements of the disclosed device, including the light emitting diode and the re-emitting semiconductor structure, may be comprised of any suitable semiconductor comprising: an Iv group element such as Si or (in the luminescent layer); ΙΠ-V compounds, such as InAs, AUs, GaAs, inp, A1P, Gap, InSb, 八咖, 讥 and their alloys, (1) vi compounds 'such as ZnSe, CdSe, BeSe, MgSe, ZnTe, CdTe, BeTe, MgTe, ZnS, (10), (4), Mgs and alloys thereof; or alloys of any of the above. Where appropriate, the semiconductors may be n-doped or p-doped by any suitable method or by inclusion of any suitable dopant. In a typical embodiment, the light emitting diode is a III-V semiconductor device and the re-emitting semiconductor structure is a VI semiconductor device. 121770.doc -15- 200807769 In some embodiments, the composition of each layer of one of the components of the device is selected according to the following considerations, such as the light emitting diode or the re-emitting semiconductor construction: each layer has The substrate of the given thickness of the layer is typically pseudo-crystal or lattice matched to the substrate. Alternatively, each layer pair may be pseudomorphic or lattice matched to the adjacent layer. The potential well layer material and thickness are typically selected to provide a desired transition energy that will correspond to the wavelength of light to be emitted from the quantum well. For example, the dots identified as 46〇nm' 540 nm and 630 11111 in FIG. 2 indicate that the Cd(Mg)ZnSe alloy has a lattice constant (5·8687 angstroms or 0.58687 nm) close to the lattice constant of the InP substrate and corresponds to Band gap energy at wavelengths of 46 〇 nm (blue), 54 〇 nm (green), and 63 〇 nm (red). A potential well can be considered a quantum well if the potential well system is sufficiently thin that the quantum energy increases the energy of the transition above the bulk bandgap energy in the well. The thickness of each quantum well layer determines the amount of quantized energy in the quantum well that adds volume band gap energy to produce transition energy in the quantum well. Thus, the wavelength associated with each quantum well can be tuned by adjusting the thickness of the dice well layer. Typically, the thickness of the sub-wellbore is between 1 nm and 1 〇〇 nm, and more typically between 2 nm and 35 nm. In general, the quantized energy is converted to a wavelength reduction of 20 to 50 nm as desired with respect to the band gap energy alone. The compressive force in the emissive layer also changes the transition energy of the potential well and the quantum well, which includes the compressive force generated by the poor matching of the lattice constants between the pseudomorphic layers. Techniques for calculating the energy of transitions in stressed or unstressed potential wells or quantum wells are known in the alpha technology, such as the work of Herbert Kroemer, 121770.doc -16-200807769, Quantum Mechanics, Materials Technology and Applied Physics (Englew〇od City Training Department, New Jersey, 1994), pp. 54-63; and _, Hao Quan's Quantum Well Laser (San Diego, California Academic Press, 1993) 72nd to 1st page This is incorporated herein by reference. • Select any suitable emission wavelength, including wavelengths in the infrared, visible, and ultraviolet frequencies. In some embodiments, the emission wavelength is selected such that the combined output of light emitted by the device establishes the appearance of any color that can be produced by a combination of two, three or more (a) early color sources, such colors Contains white or near white, color, deep red, cyan, etc. In some embodiments, the device emits light at an invisible infrared or ultraviolet wavelength and at a visible wavelength that is indicative of the device being in operation. Generally, the light emitting diode emits photons of the shortest wavelength, so that photons emitted from the light emitting diode have sufficient energy to drive the potential well in the re-emitting semiconductor structure. In a typical embodiment, the light emitting diode system is a III-V semiconductor device (e.g., a GaN-based light emitting diode that emits blue light), and the re-emitting semiconductor structure is an n-VI semiconductor device. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a band diagram showing the conduction band and valence band of a semiconductor in a re-emitting semiconductor structure. The layer thickness is not to scale. Table I indicates the composition of layers 1 to 9 in this embodiment and the band gap energy (Eg) of the composition. This configuration can be grown on an InP substrate. 121770.doc -17- 200807769 Table i

Layer composition band gap energy (Eg) 1 Cdo.24Mgo.43Zno.33Se 2.9 eV 2 Cd〇.35Mg〇.27Zn〇.38Se 2.6 eV 3 Cd〇j〇Zn〇3〇Se 1.9 eV 4 Cd〇.35Mg〇 .27Zn〇.38Se 2.6 eV 5 Cdo.24Mgo.43Zno.33Se 2.9 eV 6 Cd〇.35Mg〇.27Zn〇.38Se 2.6 eV 7 Cdo.33Zno.67Se 2.3 eV 8 Cd〇.35Mg〇.27Zn〇.38Se 2.6 eV 9 Cdo.24Mgo.43Zno.33Se 2.9 eV Layer 3 represents a single potential well that emits a red quantum well with a thickness of about 1 〇 nm. Layer 7 represents a single potential well that emits a green quantum well with a thickness of about 1 〇 nm. Figures 2, 4, 6 and 8 show absorbing layers, each having a thickness of about 1000 nm. Layers 1λ 5 and 9 represent support layers. The support layer is typically selected to be substantially transparent to the light systems emitted from quantum wells 3 and 7 and from short wavelength light emitting diodes. Alternatively, the apparatus can include a plurality of red or green light potential wells or quantum wells separated by an absorber layer and/or a support layer. Without wishing to be bound by the theory, the specific real target represented by the diagram is operated according to the following principle: blue wavelength photons emitted by the light emitting diode and impinging on the 4 re-emitting semiconductor structure can be used. It is absorbed and re-emitted from the green light neutron well 7 into a green wavelength photon or re-emitted from a red light dice well 3 into a red wavelength photon. The absorption of a short-wavelength photon produces an electron and hole pair that can then be recombined with a photon of 121770.doc 200807769 in a quantum well. The multicolor combination of blue, green, and red wavelength light emitted from the device can appear white or nearly white. The intensity of the blue, green, and red wavelength light emitted from the device can be balanced in any suitable manner, including manipulating the number of each type of quantum well, using a filter or reflective layer, and manipulating the thickness of the absorber layer and Composition. Figure 3 shows the spectrum of light emitted from a particular embodiment of the apparatus. Referring again to the specific embodiment illustrated by Figure 1, the absorbing layers 2, 4, 5 and 8 can be adapted to absorb photons emitted from the luminescent diode by the following means. A band gap is selected for the absorbing layers. The energy is intermediate between the energy of the photons emitted from the illuminant: the polar body and the energy of the quantum wells 3 and 7. The electrons and holes generated by the absorption of photons in the absorbing layers 2 4 6 and 8 are captured by the quantum wells 3 and 7 before being recombined with the accompanying emission of the photons. The absorbing layer may optionally have a gradient of constituents in all or a portion of its thickness for transporting or directing electrons and/or holes in the funnel toward the potential well. In certain embodiments, the illuminating The diode and the re-emitting semiconductor structure are provided in a single semiconductor unit, that is, the light emitting diode and the re-emitting semiconductor structure can be grown on the same wafer in a series of fabrication steps. The semiconductor unit typically includes a -first potential well positioned within the pn junction and a first potential well not positioned within the -pn junction. The equipotential well is capable of emitting light at two wavelengths, one wavelength corresponding to a transition energy of the first potential well (ie, light emitted by the light emitting diode) and the second wavelength corresponding to The transition energy of the first potential well (ie, the light emitted by the re-emitting semiconductor structure) is in an eight-type operation, and the first potential well emits photons in response to passing through the 121770.doc •19-200807769 pn junction And the second potential well emits photons in response to absorption of a portion of the photons emitted from the first potential well. The semiconductor unit can additionally include one or more absorber layers surrounding or in close proximity to or immediately adjacent to the second potential well. The absorber layer typically has a band gap energy that is less than or equal to the transition energy of the first potential well and greater than the transition energy of the second potential well. In a typical operation, the absorber layer assists in absorbing photons emitted from the first potential well. The semiconductor unit can include an additional potential well positioned within the pn junction or not positioned within the pn junction, and an additional absorber layer. Fig. 4 is a band diagram showing a conduction band and a valence band of a semiconductor in such a semiconductor unit. The layer thickness is not to scale. Table II indicates the composition of layers 1 to 14 in this specific example and the band gap energy (Eg) of the composition.

Table II

Layer composition band gap energy (Eg) 1 InP substrate 1.35 eV 2 η doped Cdo.24Mgo.43Zno.33Se 2.9 eV 3 Cd〇.35Mg〇.27Zn〇.38Se 2.6 eV 4 Cd〇j〇Zn〇.3〇 Se 1.9 eV 5 Cd〇.35Mg〇.27Zn〇.38Se 2.6 eV 6 η doped Cdo.24Mgo.43Zno.33Se 2.9 eV 7 Cd〇.35Mg〇.27Zn〇.38Se 2.6 eV 8 Cdo.33Zno.67Se 2.3 eV 9 Cd〇.35Mg〇.27Zn〇.38Se 2.6 eV 10 η doped Cdo.24Mgo.43Zno.33Se 2.9 eV 11 undoped Cdo.24Mgo.43Zno.33Se 2.9 eV 12 Cd〇.3lMg〇.32Zn〇.37Se 2.7 eV 13 undoped Cdo.24Mgo.43Zno.33Se 2.9 eV 14 p doped Cdo.24Mgo.43Zno.33Se 2.9 eV 121770.doc -20- 200807769 Layers 10, 11, 12, η smoke η main one,, and 14 is not a Ρ junction, or more specifically, a tip junction, because φ Ρ, make #口 is the middle undoped ("intrinsic" doped) layer u, 12 and 13 push: layer 10 is between the ρ-division layer 14. Layer 12 represents the in-plane Γ: well, which is a quantum well having a thickness of about 10 (four). Or ... may include a plurality of potential wells or quantum wells within the ρη junction. Layers 4 and 8 represent the second and third potential wells that are not in the -ρη junction, each of which is a lining having approximately 1 〇 and degrees. Alternatively, the device can include additional potential wells or quantum wells that are not in the junction. In another alternative, the "delta device" may include a single-potential well or a quantum well that is not within the pn junction. Layers 3, 5, 7, and 9 represent absorbent layers, each having a thickness of about just (10). Electrical contacts (not shown) not shown in the figure provide (d) a path for supplying current to the pn junction. The electrical contacts are electrically conductive and typically consist of a conductive metal. The positive electrical contacts are electrically connected to the layer 14 either directly or indirectly through the intermediate structure. The negative electrical contact is electrically connected to one or more of the layers U, 4, 5, 6, 7, 8, 9 or 10 directly or indirectly through the intermediate structure. Without wishing to be bound by theory, it is believed that this embodiment operates according to the following principles: when current is transferred from layer 14 to layer 10, the blue wavelength photon is from the quantum well in the Pn junction (12) emission. Photons that are advanced in the direction of layer 14 may leave the device. Photons traveling in opposite directions can be absorbed and re-emitted from the second quantum well (8) into green wavelength photons or re-emitted from the third quantum well (4) into red wavelength photons. - The absorption of blue wavelength photons will be combined with the electron and hole pairs, which can then be combined with the emission of - photons in the second or third quantum wells. Green or red wavelength photons traveling in the direction of layer 14 may leave the device. Blue, green, and red emitted from the device 121770.doc • 21 · 200807769 The multicolor combination of wavelength light can appear white or nearly white. The intensity of the blue, green and red wavelength light emitted from the device can be balanced in any suitable manner' which involves manipulating the number of potential wells of each type and using a filter or reflective layer. Figure 3 shows the spectrum of light emitted from a particular embodiment of the apparatus. Referring again to Figure 4, the absorbing layers 3, 5, 7 and 9 may be particularly adapted to absorb photons emitted from the i-th well (12) since the absorbing layers have

The energy of the band gap between the energy of the transformation of the scorpion well (12) and the energy of the second and third quantum wells and the transition of the sentence. The electrons and holes generated by the absorption of photons in the absorbing layers 3, 5, 7 and 9 are captured by the brothers 1 and 2 of the scorpion wells 8 and 4, which are usually combined with a photon. . The absorber layer can optionally be doped (typically like a surrounding layer), which in this embodiment is n-doped. The absorbent layer may optionally have a compositional gradient in all or a portion of its thickness to transport or direct electrons and/or holes in the form of a funnel toward the potential well. In the case of the light-emitting diode system, the visible-wavelength light-emitting diode, the layers of the re-emitting semiconductor structure are partially transparent to the light emitted from the light-emitting diode. Or, for example, in the case of the light-emitting diode system, a UV-wavelength light-emitting diode, or a plurality of layers of the semiconductor structure that are re-emitted, or a plurality of light that may block emission from the light-emitting diode. f is either completely or completely 'so a greater portion or m or all of the light emitted from the device is re-emitted from the re-emitting semiconductor construction. In the case of the light-emitting diode system - a wavelength light-emitting diode, the re-emitting semiconductor structure may comprise a red, green and blue 121770.doc -22-200807769 photoquantum well. The garment may comprise an additional layer of conductive, semi-conductive or non-conductive material. The contact layer can be energized to provide a means for supplying current to the light-emitting diodes. The electrical contacts can be arranged to pass current through the redistributed semiconductor structure. Alternatively, the portion of the re-emitting semiconductor structure can be (4) dropped to define a hole or aperture through which the p or n layers of the four light emitting diodes can be in electrical contact. Optical ripple can be added

The layer changes or corrects the balance of the wavelengths of light in the & emitted by the adapted light-emitting diode. In some specific embodiments, the disclosed light source provides white or near white light by emitting light at four major wavelengths in the blue, green, yellow, and red bands. In an alternative embodiment, the light source produces white or near white light by emitting light at two major wavelengths in the blue and yellow bands. In other embodiments, the light source is emitted in a substantially single-visible color (e.g., green). The device includes additional semiconductor components including active or passive components such as resistors, diodes, Zener diodes, capacitors, transistors, bipolar transistors, FET transistors, M〇SFET transistors, Inter-edge bipolar transistors, optoelectronic crystals, photodetectors, SCRs, fluid-closed, three-terminal bidirectional tamper switches, electric bucks regulators and other circuit components. The device can include an integrated circuit. The device may include a display panel or the light emitting diode included in the light source uncovered by the illumination panel 0 and the re-emitting semiconductor structure may be fabricated by any suitable method, which may include molecular beam θ0 ( MBE), chemical vapor deposition, liquid phase crystals and vapor phase worms 12I770.doc •23- 200807769 crystal. The components of the device can comprise any suitable substrate. Typical substrate materials include Si, Ge, GaAs, InP, sapphire, sic, and. The substrate can be n-doped, p-doped or semi-insulating, which can be achieved by any suitable method or by inclusion of any suitable dopant. Alternatively, the device may have no substrate. In a specific embodiment, the components of the device can be formed on a substrate and then separated from the substrate. The components of the device may also be joined together by any suitable method, including the use of viscous or solder materials, pressure, heat, or combinations thereof. Such a method can be used to bond, for example, the light emitting diode (eg, a light emitting diode die) to the re-emitting semiconductor structure, or the light emitting diode and the optical component (eg, a capture) The bonding or bonding of the re-emitting semiconductor structure to the optical component. Useful semiconductor wafer bonding techniques include those described in Q._y Tong and U. G5sele, Chapters 4 and 10 of Semiconductor Wafer Bonding (New York Wiley and Sons, 1999). The wafer bonding method described in U.S. Patent Nos. 5,915,193 (Tong et al.) and 6,563,133 (T〇ng) can also be used. A method for bonding GaN to a ZnSe wafer is described in Japanese Applied Physics, No. 43, pp. L1275 (2004) by Murai. In some embodiments, a bonding layer is present between the light emitting diode and the re-emitting semiconductor construction. The access layer can comprise, for example, a transparent adhesive layer, an inorganic film, a fusible glass frit or other suitable cement. Additional examples of bonding layers are described in U.S. Patent Publication No. 2005/0023545 (Camr as et al.). Usually the joints established by the warriors are transparent. The bonding method may comprise an interface bonding, or a technique of bonding only the elements (e.g., the light emitting diode and the re-emitting 121770.doc -24-200807769 semiconductor construction) at the edge, i.e., edge bonding. Visible index matching layer or gap space. Included, the luminescent diode system is usually in the form of a package, which is a light-emitting diode die or a wafer-pole body die in its most basic form (ie in a circular order) ::In the form of individual components or wafers manufactured): Wide: The sheet may comprise an electric hopper adapted to apply a power source to energize the device, and individual layers of the piece or wafer and other functional components are typically formed on a daily basis. The 'on-stage' and completed wafers are finally cut into individual pieces to create multiple light-emitting diode grains. The metal head has a reflective cup in which the light-emitting diode is mounted, and an electrical lead connected to the light-emitting diode die. The package further comprises a molded transparent resin encapsulating the light emitting diode dies. The encapsulating resin typically has a nominal hemispherical front surface to partially align the light emitted from the luminescent diode dies. A light emitting diode component can be or include a light emitting diode die or a light emitting diode die in combination with a re-emitting semiconductor structure or other component. The optical elements described above can be fabricated separately and then contacted or in close proximity to one of the surfaces of a light emitting diode assembly that can be used to couple light from the surface or "take" light and reduce the component The number of light captured inside. Such components are referred to as pickers. The picker typically has an input surface that is sized and shaped to substantially mate with the primary emitting surface of the LED assembly. The picker can be used to provide a high brightness light emitting diode package or light source. Such a sealed LED component can be a light-emitting diode/re-emission 121770.doc -25-200807769 semiconductor construction combination, as a discrete component or as a semiconductor unit, such as the above or currently pending US patent The application is described in USSN 11/〇〇 9217 or ussn 11/009241, which is incorporated herein by reference. In Fig. 5, a light emitting diode package 1A includes a light emitting diode assembly 12 mounted on a head or other mount 14. The LED assembly and pedestal are generally described on a simple basis, but the reader should understand that it can encompass conventional design features that are well known in the art, as well as the re-emitting layer as described above. The main emitting surface Ua, the bottom surface, the surface 12b and the side surface 12c of the light emitting diode assembly are shown in a simple rectangular configuration, but other known configurations are also contemplated, such as forming an oblique side surface of an inverted truncated pyramid shape. . The electrical contacts to the LED assembly are also based on simplicity and are not shown, but may be provided on any surface of the LED assembly, as is known. In an exemplary embodiment, the LED assembly has two contacts, both of which are disposed on the bottom surface i2b of the LED assembly, such as a "Crystal" LED assembly. Design situation. In addition, the mount U can serve as a support base, electrical contacts, heat sinks, and/or reflector cups. The light emitting diode package 1 also includes a transparent optical element 16 that encloses or encloses the light emitting diode assembly 12. The optical element 16 has a refractive index, and the basin is attached to the light-emitting diode assembly (more precisely, to the emitting surface, to the outer portion of the light-emitting diode assembly) and the surrounding medium (usually an optical refractory refraction) In the middle of many embodiments, it is desirable to select a material for element 16 that has a refractive index that is as high as possible but does not substantially exceed the refractive index of the polar body component of the light-emitting diode 121770.doc -26-200807769 because The smaller the difference in refractive index between the LED assembly and the component 16 is, the less light is captured and lost within the LED assembly. The optical component 16 as shown has a curved input surface, which can Helping to ensure that the light system is transmitted from the light emitting diode package to the surrounding medium 'I and can also be used to at least minutely focus or calibrate the light emitted by the light emitting diode. Other shapes (including the following) The tapered element of the step can also be used to calibrate light. The optical element 16 can be attached to a package at the appropriate location on the light emitting diode assembly, in which case the package is typically A light transmissive epoxy resin is included. The light emitting diode package 10 further has an optical element 16 and the light emitting diode, and a patterned low refractive index layer j 8 is selectively stored therein. Some of the light in the LED assembly is used to enhance the effect of brightness in the local aperture or region 2〇 on the emitting surface 12a. The patterned low refractive index layer 18 is substantially parallel to the side surface 12. And in addition to the aperture 2〇 The portion of the emitting surface 12a is in optical contact, and the optical element "is in optical contact with a portion of the emitting surface 12a over the area of the aperture. (In this respect, the optical contact, refers to the spacing at the beginning is close enough (including but a surface or medium that is not limited to direct physical contact, such that, for example, the refractive index of the low refractive index layer or transparent element affects or preferentially affects at least some of the light propagating within the light emitting diode assembly: light The internal reflection of the king. Usually, t, the surfaces or media are within the attenuation waves of each other, for example, separated by a gap of 1 〇〇, 5 〇 or 25 nm or less. There is no gap at all.) Patterned low refraction Rate layer 丨8 There is a refractive index which is substantially lower than the refractive index of the LED assembly and the refractive index of the transparent element. The layer 18 is also in the position of light expected to promote light trapping. 121770.doc • 27-200807769 Thick. By optically thicker, meaning that the thickness is large enough to avoid hindered total internal reflection' or the refractive index characteristics of the medium on one side of the layer (eg, optical element 16) are not controlled or real The shadow f is reflected in at least some of the light propagating in the medium on the other side of the layer (for example, the photodiode 12), and the thickness of the patterned low refractive index layer is greater than: One tenth of the wavelength of the important light energy in the air, more preferably greater than the wavelength: half, the best system is greater than about one wavelength. By layer "patterning", the taster includes the following specific embodiments. The layer 18 is continuous over the emitting surface of the light-emitting diode, but is extremely thin in the aperture 20 (and therefore does not effectively maintain total internal reflection) and is optically thick elsewhere. Advantageously, layer 18 is a transparent dielectric material or a layer of such material comprising at least the surface of the light emitting diode component. These materials have superior performance over reflective coatings by: for example, simply applying a metal layer to the light-emitting diode, since a dielectric material can provide for the light-emitting diode The majority of the light in the polar body assembly is reflected by 1% (by TIR), while the simple metal coating has substantially less than 100% reflectivity, especially at high incident angles. Patterning the low refractive index layer 18 enhances certain portions of the u-light photo-polar body at the expense of reducing the brightness of other portions of the light-emitting diode (eg, portions of the emission surface 12a beyond the aperture 20) (eg, aperture 2 The brightness of the part of 0). This effect relies on the light emitting diode assembly having a sufficiently low internal loss during operation to support multiple rebound reflections of light emitted within the light emitting diode assembly. Since improvements have been made in the manufacture and design of light-emitting diode components, losses from surface or volume absorption are expected to be reduced, and internal brightness enhancement effects are expected to be described in the internal 121770.doc -28-200807769 and the description herein.

It may be more efficient when outputting. Quantum efficiency is expected to increase, providing benefits for increased stability. Reduce volume absorption. By unbinding the combination to increase light across the top surface In an exemplary embodiment, most of the bottom surface Ub is a highly reflective material, such as a metal or dielectric stack. Preferably, the child has a reflectance greater than 9〇%, more preferably greater than 95, at the emission wavelength of the light emitting diode. /. The reflectivity is optimally greater than 99% reflectivity. Referring again to FIG. 5, for example, an arbitrary transmit point source 22 emits light 24. In the case of the refractive index of the light-emitting diode assembly 12 and the transparent member 16, the light that first encounters the emitting surface 12a of the light-emitting diode/optical element interface will be transmitted into and refracted by the element 16. However, the patterned layer 18 changes the interface at that location to provide total internal reflection of the light 24 . The light passes through the thickness of the light-emitting diode assembly, reflects from the back surface 12b, and re-enters the emitting surface 12a, this time escaping into the transparent element 16 due to the lack of the layer 18 as shown in FIG. Therefore, at the expense of the portion of the emitting surface 12a covered by the low refractive index layer 丨8, the portion of the emitting surface 12a at the aperture 20 is more visible (more luminous flux per unit area and per unit solid angle). In the embodiment of FIG. 5, some of the light that strikes the low refractive index layer 18 within the light emitting diode is sufficiently small at its angle of incidence with respect to the vertical vector of the emitting surface i2a that it simply passes through the low refractive index layer. In the case of 18, it is still possible to escape component 16. Therefore, the light of the low refractive index coating 121770.doc -29-200807769 portion of the light-emitting diode assembly will have a range of escape angles that are non-zero but smaller than the uncoated portion. In an alternative embodiment, the low refractive index layer 18 may be covered with a good vertical reflector (eg, a reflective metal or an interference reflector) to increase the recirculation of the light of the photo-polar group and further enhance The reduction in aperture reduction' does not lose the current benefits provided by the low refractive index layer. Optionally, a +, , , g _ t V reflection can be fixed between the surface of the external light-emitting diode component and the low refractive index layer 18. The appropriate low refractive index layer 18 comprises a coating of magnesium fluoride, dendrite, sol-gel compound, bismuth compound, and enamel resin. Aerogel materials are also suitable because they can achieve a pole-effective refractive index aerogel of about 12 or less or even about μ or less by drying at a high temperature and pressure critical point of the gel. The glue is made up of (4) dissolved (four) charged colloidal 7 stone structure single 7L. The material obtained is an under-tight microporous medium. An exemplary thickness of the low refractive index layer 18 is from about 5G to (10), _nm, preferably from about 靡 to 靡 depending on the refractive index of the material. The refractive index of layer 18 is at least below the refractive index of optical element 16 that can be molded into a resin or other encapsulant material and is part of the light emitting diode assembly at or near the emitting surface. , τ χ 乂 refractive index below. Preferably, the refractive index of layer 18 is less than about 1 · 5, f # τ / , , ;·4. The low refractive index layer 18 can be a solid layer of dielectric material or a vacuum or gas filled gap between the light emitting diode assembly and the transparent element 16. The outer surface of the illuminant _ polar body assembly may be optically smooth, i.e., having a surface treatment layer L of 20 nm. Some, all or part of the surface of the external light-emitting diode may also be optically rough, i.e. having a surface treatment layer Ra of greater than 121770.doc -30. 200807769 and about 20 nm. Portions of the edge or top surface may also be formed at a non-orthogonal angle relative to the base of the illuminating diode assembly. The scope of this special angle

It can be from the angle of L|.I in the orthogonal direction to 45 degrees. Moreover, most or a few of the surfaces of the light emitting diode assembly need not be flat. For example, the raised portion or portions of the emitting surface of the light emitting diode assembly can contact the generally flat bottom surface of the optical element to define at least the apertures 2 〇, 20a and 34 of Figures 5-7.

The shape of the aperture 20 defined by the substantial lack of the low refractive index layer 18 can be circular, rectangular, square, or polygonal or non-polygonal or more complex or regular or irregular. Multiple apertures are also contemplated, as explained in more detail below. The aperture shape is typically chosen to function as an intended application and can be modified to optimize overall system performance. It is also contemplated to pattern the surface of the aperture with a continuous or discontinuous pattern or network of low refractive index coated regions, or to provide a thickness or index of refraction or a gradient in both for the low refractive index layer to modify the surface of the aperture. The distribution of the light output on it. The aperture may also cover the entire top emitting surface 12a, wherein at least a portion of the side surface 12c is covered with a low refractive index layer. Referring to Figure 6, a light emitting diode package 10a similar to the light emitting diode package 10 is shown, but wherein the low refractive index layer 18 has been modified by a network comprising a low refractive index coated region within the central aperture. The modified low refractive index layer is thus identified as 18a and the modified central aperture is identified as 2〇a. The other components retain the reference numbers used in Figure 5. As shown, the network of regions of low refractive index can be placed in a pattern that is relatively dense near the edge of the aperture, so that the transmission system is relatively low in this region. The ability to trim the transmission through the aperture can be used for high brightness LEDs where system design requires specific spatial uniformity or output distribution. Such a configuration of low refractive index media within a bore is equally applicable to other disclosed embodiments including, but not limited to, the specific embodiments of Figures 7, 8 and 10-12. The aperture may be coated with a low refractive index material having a different thickness or a different refractive index relative to the low refractive index material of the aperture (referred to as "peripheral low refractive index material'') both. Such a design $activity can be used to modify the angular distribution of light emitted by the packaged light emitting diode, for example, by coating a material having a refractive index between the refractive index of the optical element 16 and the surrounding low refractive index material. 2〇a will limit the range of angles of light emitted by the aperture. This will allow light that is typically emitted at a large angle to be recirculated within the light-emitting diode assembly and increase the output of light over a range of angles that can be used more efficiently by the associated optical system. For example, collection optics for electronic projection systems do not efficiently use light other than the design angle of the conventional F/2t〇F/2.5. Referring now to Figure 7, a light emitting diode package 30 includes a transparent optical component 32 that is in partial optical contact with the light emitting diode assembly 12 and is partially spaced from the light emitting diode assembly to define therebetween. a substantial air gap 34 transparent element 32 has an input surface 32a and an output surface 32b, the input surface 32a being smaller than the output surface 32b; smaller than the emitting surface 12a of the LED assembly; and the emitting surface A portion of the optical contact is to define the aperture 34. In this aspect, the input surface is, small, on the output surface because it has a smaller surface area, and the output surface is correspondingly 121770.doc -32-200807769 larger than the input surface because it has a larger Surface area. The difference in shape between the optical element 32 and the emitting surface 12a creates an air gap % which forms a patterned low refractive index layer around the contact area (aperture 34). Therefore, the light generated by the light-emitting diode assembly can be efficiently extracted by the transparent member 32 having high luminance at the hole search 34. Optical element 32 and other optical elements disclosed herein can be joined to the light emitting diode assembly at any point of contact by any suitable means, or can be held in place without engaging the emitting surface of the light emitting diode assembly . A further description of a non-bonding optical component in a light-emitting diode package can be found in the co-pending patent application publication US 2006/0091784 (Connor et al.), which is entitled "Non-joined" Light-emitting diode packages for optical components, all of which are incorporated herein by reference. As explained above, by inserting their refractive index between the refractive index of the light-emitting diode assembly 12 and the transparent element 32 a layer of material that reduces the range of angles of light emitted by the emitting surface i2a of the light emitting diode into the optical element 32 on the aperture 34. A range for reducing the angle of the collected light or for Another method of at least partially aligning the collected light is to use a transparent element having one or more tapered sidewalls, such as s _ , as shown in Figure 8. Here, the LED package 40 Similar to the light-emitting diode package 3, but the optical element 42 replaces the optical element 32. The member 42 has an input surface 42& and an output surface, the input surface 42a is smaller than the output surface; less than the light-emitting diode Component The surface 12a is exposed and partially optically contacted with the emitting surface to define an aperture 44. In terms of the shape between the optical element 42 and the emitting surface (1), - an air gap 46 is created, which is around the contact area (aperture 44) Forming a patterned low refractive index layer 121770.doc -33 - 200807769. Further, the optical element 42 includes a tapered side surface 42d' that is reflective to align the highly oblique light entering the input surface 42a from the light emitting diode assembly Certain light may provide reflectivity of the side surfaces 42c, 42d by supporting a low refractive index medium of tir or by applying a reflective material such as a metal layer or an interference reflector or a combination thereof. , plastic inorganic glass, or by providing an optically smooth treatment layer to the emitting surface of the 4th optical component

The face roughness RA is less than about 50 nm, preferably less than about 2 baht (4) and then the surfaces are held in close proximity to one another, and the optical element 42 can be in optical contact with the light emitting surface of the light emitting diode assembly. Further, the optical member 42 may be a composite structure in which a lower tapered portion including the surfaces 42a, 42e, 42d is separated from an upper lens including a surface core, and the portions are adhered or otherwise joined by a conventional member. At the beginning. Dotted lines are provided to show the two parts more clearly. Further descriptions of composite optics, design considerations, and associated benefits are provided below. The use of the -change type for determining the brightness of the packaged light-emitting diode using the patterned low-refractive-index layer and the tapered optical element of the output aperture can be increased. A light-emitting diode grain having an emission region, an absorption region, and a beveled edge facet is formed by using the material property of the tantalum carbide (refractive index of 1 η) to represent - typical luminescence: (iv) grain. - Inverted pyramidal cone-shaped optical element is optically coupled to the center, plane or emitting surface of the luminescent particle, the material of the optical element, and the material properties of the I. The light-emitting diode dies have a shape of - square 121770.doc - 34 · 200807769 as viewed from the input and the wheeled surface of the optical element. The model further couples the output surface of the optical element to a hemispherical lens having material properties of BK7 glass, wherein the diameter of the lens is ten times the width of the emitting surface of the square light emitting diode die, and the lens The radius of curvature is five times the width of the emitting surface of the light-emitting diode die. The size of the input surface of the optical element is incrementally changed from 100% of the emission area of the light-emitting diode die to 4% while maintaining the aspect ratio of the height of the optical element 22 times that of the optical element The width of the output surface is maintained and the width of the output surface is maintained twice the width of the 4-input surface. Since the size of the optical element becomes smaller than the size of the emitting surface of the light-emitting diode die, the medium having a refractive index of 丨 is used to cover the light-emitting diode aa outside the input surface of the optical element. A portion of the surface of the particle emitting surface to form a low index patterning layer that covers the emitting surface of the light emitting body die in a complementary manner to the input surface of the optical element. Calculating a portion of the power emitted by the optical component (representing the relative light output of the LED package) and the amount of relative radiation emitted by the output surface of the optical component (lumens / (cm2sr) (representing the LED package) Relative brightness. Figure 9 depicts the observed trend in a general manner. Curve 50 is the relative power of the emission; curve 52 is the relative radiation. The result is determined that as the aperture size decreases, less is obtained from the package. Total light output, but brightness (in smaller apertures) can be significantly increased. Light source construction using a light-emitting diode assembly is expected to be similar to the results of the model, ie, a light-emitting diode combined with a re-emitting semiconductor construction体晶津立, 例士口# The semiconductor structure of the # emitted is arranged on top of the light-emitting one-pole crystal, and the optical element (for example, a picker) is arranged 121770.doc -35-200807769 The re-emitting semiconductor structure optically coupled to the emitting surface of the light emitting diode assembly. The patterned low refractive index layer of the disclosed embodiment may A coating comprising a gap or a low refractive index material applied to the light emitting diode assembly. A suitable method for coating the light emitting diode assembly with a low refractive index material or an individual layer that will form an interference reflector (Using liquid) comprises spin coating, spray coating, dip coating, and dispensing a coating onto the light emitting diode assembly.

The liquid coating may be composed of a monomer, a solvent, a polymer, an inorganic glass forming material, a sol gel, and an aerogel which are subsequently cured. A suitable method of coating a low refractive index material from a gaseous state involves chemical vapor deposition or condensation of the vapor on the light emitting diode assembly. The light emitting diode assembly can also be coated with a low refractive index material by sputtering, vapor deposition or other conventional physical vapor deposition methods. The coatings can be applied to a plurality of light-emitting diodes at the wafer level (either after cutting or after the wafer is cut but before mounting, mounting the light-emitting one-pole assembly on the head or other support) After applying the coating, the coating is applied after the electrical connection between the germanium and the germanium LED assembly. The semiconductor wafer can be re-emitted and a light-emitting diode comprising an individual light-emitting diode = an array. The coating is applied after the wafer is bonded. The aperture can be formed before or after the low refractive index coating is applied. The choice of the post-coating pattern can depend on the particular low refractive index material selected, and the basin and The compatibility of the t-conductor treatment. For example, the wafer can be coated with a photoresist: the net refractive index is established by the opening 'which requires the pore size' deposition - the appropriate low-calorie leather u, and then the stripping is performed using a suitable solvent. A low refractive index material can be deposited on the entire wafer or LED assembly at 121770.doc -36 - 200807769. The patterned photoresist layer can be applied as a mask and transferred using appropriate techniques (eg reactive ions (4)). Low-refractive-index material. The layer can be peeled off with a suitable solvent. It is used to pattern low-refractive-index materials. The other technology includes laser-burning (4) light shading, which can be especially used in typical photolithographic stripping or developing solutions. Dissolvable material. A suitable method for stripping an undesirable coating of a low adhesion zone involves first applying a bonding material and then removing the bonding material, wherein the bonding material is capable of removing the coating from the aperture region but Allowing the surrounding coating to remain intact. The low refractive index coating can also be patterned to form areas in which electrical connection to the light emitting diode assembly can be made. See, for example, U.S. Patent Publication 2 2 3/〇ιιΐ667 μ (Schuben), which is incorporated herein by reference. The metal reflective layer can be applied by conventional procedures and (iv) patterned to provide an aperture and appropriate electrical insulation. Turning now to Figure 10 It can be seen that there is a light emitting diode package that utilizes a tapered optical element 62 to lightly mate light from the light emitting diode assembly 12. As explained in connection with optical element 42 of FIG. The optical element 62 also has a composite construction 'i.e., it includes at least two sections 接合," joined together. The sections have input surfaces 64a, 66a, an output surface (four), and reflective side surfaces 64c, 64d, 66c, 66d, as shown. The element has a tapered side surface that is non-imaged (at least partially) redirected or calibrated from the light of the closely-fixed emitting surface 12a of the light-emitting diode. The tapered element 62 is disclosed herein For other tapered elements, the side surfaces need not be planar. They may be conical, curved (including parabolic) or any suitable combination of 121770.doc • 37 · 200807769, depending on the intended application and design constraints. The disclosed cone element can have the shape of a component known in the art as CPC ("composite" parabola/. °) In many cases it is desirable to form an optically tapered element using a high refractive index material to reduce reflections on the light emitting diodes on the aperture defined by the input surface 64a = emission surface Ua, thus efficiently from the light emitting diode assembly Such as ^ light, or draw light from the component. It is expected that optical components will be fabricated using materials having thermal conductivity and high thermal stability in many cases. In this way, the optical component can perform not only optical functions but also 敎 management functions. By arranging, for example, an optical component with a heat sink, in order to obtain additional thermal management benefits, which is described in more detail in the commonly assigned U.S. Patent Application Publication No. 2006/0091414 (Ouderkirk et al.). The name of the AH Hai Announcement is "Light Emitting Diode Package with Front Surface Thermal Picker", which is incorporated herein by reference in its entirety. A system of remains having a sufficiently high refractive index (eg, greater than, 2., or even 2.5) at the emission wavelength of the light-emitting diode, and/or a transparent material having a thermal conductivity greater than 〇2 It is expensive and/or difficult to manufacture. Materials with both high refractive index and ancient + 阿 a thermal conductivity include diamond, carbon carbide (SiC) and sapphire (4) 2〇3). Such inorganic materials are relatively expensive & 'hard" and are difficult to form and polish into optical grade treatment layers. Carbonized carbide also specifically exhibits a type of defect known as a microtubule that can cause scattering of light. Carbonized carbide is also electrically conductive and can also provide electrical contact or circuit functionality. If the scattering is limited to a location near the input end of the component, the scattering within the optically tapered element is acceptable. However, the manufacture of 121770.doc -38-200807769 cookware: a tapered element of sufficient length to efficiently align with the light-emitting diode, and the light will be more expensive and time consuming. In the manufacture of a single-piece component, the system, the energy source can be: === ^ to make the luminescence: (4) assembly and (4) component assembly 22 =: 'Because' may be beneficial to divide the cone component into The small manufacturing cost is manufactured by using different optical materials to reduce the area & the desired light-emitting diode and the first optical material is used to make contact with the first optical material. The first optical material has a high fold, approximately equal to the fold of the light emitting diode component on the emitting surface, 6 thermal conductivity, and/or high thermal stability. In this regard, high heat stability refers to a material having a decomposition temperature of about 600 ° C or higher. A second section is joined to the first section and fabricated from a second optical material that can have a lower material cost and is easier to manufacture than the first optical material. The second optical material can have a lower index of refraction, a lower thermal conductivity, or both relative to the first optical material. For example, the second optical material can include glass, polymers, ceramics, ceramic nanoparticle-filled polymers, and other optically transparent materials. Suitable glasses include glasses including lead, zirconium, titanium, and antimony oxides. These glasses can be made using compounds containing titanates, silicates, and stannates. Suitable ceramic nanoparticles comprising an oxidizing hammer, titanium oxide, zinc oxide, and a vulcanized reed, a third segment of a third optical material engageable with the second segment to further assist in the light emitting diode Light is transferred to the external environment. In a specific embodiment, 121770.doc -39-200807769 'configures the refractive index of the three segments so that npwn3, thereby minimizing the total Fresnel surface associated with the tapered element against the 〇 super large lens element (eg The upper portion of the optical member 42 shown in Figure 8 can advantageously be placed or formed at the output of the disclosed simple or composite tapered member. Anti-reflective coatings can also be provided on the surface of such lens elements and/or on the input and output surfaces of the disclosed optical elements (including tapered or other calibration elements).

In an unconventional configuration, the LED die can be included on a 〇.4 mm thick sic plate! Mmxl mm GaN junction. The first section 64 of the tapered element 62 can be comprised of SiC. The second section 66 can be comprised of LASF 35, a non-absorbent, non-scattering, high refractive index glass having η 2.0. The width dimension of the junction between the first and second sections, as well as the output size of the first zone slave, may be selected as needed to optimize the total light output to the surrounding environment of refractive index 丨〇. The edge of the 0.4 _ thick SiC thin plate can be tapered to a negative slope of 12 degrees to completely prevent light reflection on the side surface of the illuminating m piece... This slope can be trimmed as needed because it is the same as the standard package. Compared with the polar body, the absorption and the moonlight in the junction of the LED and the Sic sheet will change to the integrated mode structure. For example, it may be desirable to use a positive slope (where the width of the junction of the LEDs is less than the width of the Sic sheet) to direct the pre-k-absorption junction. In this way, the sheet can be considered as part of the tapered element. The wide section 64 can be combined with a heat sink as previously mentioned. The second zone can be joined to the first section 64 using conventional joining techniques. If a material of 121770.doc 200807769 is used, it can have a fold rate between the two optical materials joined to reduce the phenanthrene reflex. Other useful bonding techniques include wafer bonding techniques known in semiconductor wafer bonding technology. Useful semiconductor wafer bonding techniques include the techniques described above. The LED package 70 shown in Figure 11 utilizes a composite tapered element 72 having a first input 74 of one of the faces 74a connected by a tapered reflective sidewall to a larger output surface 7A. The package is packaged in a second section %, which also has an input surface 76a (extending like the output surface 7) and a larger output surface 76b. The output surface (10) is curved to provide the composite element 72 with optical power that can be used for further calibration or focusing. The tapered side surface of section 74 is shown as a coating (4) having a low refractive index material that is used to promote TIR on such surfaces. The material preferably has a refractive index lower than that of the first segment 74, the second segment 76, and the light emitting diode assembly 12. The coating 78 can also be applied to portions of the emitting surface 12a that are in contact with the unlit portion 74 of the light-emitting diode assembly, and/or side surfaces (see Figure 5). In the construction of the light-emitting diode package 7, the first section 74 can be joined (or simply placed thereon) to the desired aperture area of the surface 12a, and the precursor liquid of the encapsulating material can be used in a sufficient amount. Metering is performed to encapsulate the light emitting diode assembly and the first segment, and then the precursor material Z is cured to form a completed second segment 76. Materials suitable for this purpose include conventional sealers such as grease or epoxy materials. The seal I may also include a heat sink that is coupled to the side of the first section 76 by the coating 78. Even in the absence of such a heat sink, 'using a tapered element with high thermal conductivity: the first section can still add a large amount of thermal mass to the light-emitting diode component, thus 121770.doc -41- 200807769 at least for use The pulsed operation of the modulated drive current provides certain benefits. The simple tapered elements and composite tapered elements disclosed herein can be fabricated by conventional means, such as by separately fabricating a tapered assembly, joining a first segment to the light emitting diode assembly, and then adding a continuous segment. Alternatively, precise grinding techniques can be used to fabricate simple and composite tapered elements, which are disclosed in commonly assigned U.S. Patent Application Publication No. 2006/0094340 (〇uderkirk et al.), which is entitled " The process of optical and semiconductor components "; and the US Patent Application Publication No. 2006/0094322 (Ouderkirk et al.), the name of the publication is, the process of illuminating arrays, both of which are incorporated by reference. Briefly, a workpiece is prepared that contains one or more layers of the desired optical material. The workpiece can be of a larger size, such as a wafer or fiber segment. A precise patterning of the abrasive begins with the The workpiece contacts to grind the channels in the workpiece. When the polishing is complete, the channels define a plurality of projections, which may take the form of simple or compound tapered elements that can be individually removed from the workpiece And each time it is joined to a separate light-emitting diode assembly, or an array of tapered elements can be conveniently arranged with the array of light-emitting diode components In addition, the 'optical element (e.g., the picker) can be used in the U.S. Patent Application Serial No. 11/381,512 (Attorney Docket No. 62114 US 002), which is incorporated herein by reference. The technology is manufactured and can be used in the manufacture of high refractive index materials disclosed in U.S. Patent Application Serial No. 1 1/3 81,518 (Attorney Docket No. 61216 US 002) filed on May 3, 2006. The two copending applications are incorporated by reference herein in the entirety of the entire disclosure of the entire disclosure of the entire disclosure of the disclosure of Consideration is given to coupling a plurality of such elements to different portions of the same emitting surface. Advantageously, such a method can be used to reduce the illumination from the luminescence by simply replacing a single-optical tapered element with a plurality of J-shaped members. Diode group: The amount of optical material necessary to light a given amount of light. When dealing with expensive and difficult to handle materials such as diamond, Sic, and sapphire, differences in material usage may be especially For example, replacing a single optical tapered element with a 2x2 array of smaller optical tapered elements can reduce the required thickness of the high refractive index (first) optical material by a factor of 2 or more, and a 3x3 array can Reducing the required thickness by a factor of three or more. Surprisingly, even though the light may not be efficiently emitted from the appropriate position between the input surfaces of the optical elements, the model displays this The method will have a high net extraction efficiency. Another advantage of using multiple optical coupling elements (e.g., tapered elements) is that a gap or space can be formed between the elements for various purposes. For example, 鬲 can be used A refractive index fluid, a metallic thermal conductor, an electrical conductor, a heat transfer fluid, and combinations thereof, fill the gaps or spaces. Modeling a light-emitting diode package in which the light-emitting diode die is constructed of Sic and an absorber layer that is adjusted to produce 30% of the light-emitting diode die The light is emitted from the light-emitting diode when immersed in the 折射率·52 refractive index medium. This represents a typical light-emitting diode device. The model uses a light-conducting 70-piece 3x3 array coupled with the emitting surface of the light-emitting diode 121770.doc-43·200807769, as shown in the light-emitting diode package of FIG. The diode die 12' has a beveled surface 12c, and a diffractive surface 12a, and the three optically tapered elements 82, 84, 86 are shown as being above their input surfaces 82a, 84a, 8, respectively. Surface coupling. Attention should be paid to the spaces or gaps 83, 85 formed between the smaller optical elements. The take-up surfaces 82b, 84b, 86b merge with the input surface 8(4) of the larger optical cone element 88 having the output surface soup. The model is also a money-spherical lens (not shown in the figure is super-large with respect to the tapered element, the flat surface of the lens is attached to the output surface m, and the lens is manufactured by BK7 breaking field (η=1·52) The tapered element 88 is molded to consist of milk to about 2). The model therefore evaluates different materials for smaller cone elements, and for the surrounding environment of the light-emitting diode assembly (including gaps 83, 85). “The output power of the molded LED package is calculated as the soap level. For example, it is used as a small cone element, % pre-material (specified in the table) and environmental materials. (Table πΐ is specified as "^."_function·..., Table III Material BK7 'ojoi ----- 0.537 ” A” Optical SiC Material LASF3T~ """""BK7~~

Sic LASF35 Vacuum 0.754 0.665 0.466 When these values were normalized to the power of one system using a single Sic cone element, 3 = 3 array instead of the smaller ones (Table IV): 1 The following results were obtained 121770.doc -44- 200807769

Table IV Optical Materials SiC LASF35 ΒΚ7 Straight-space "ΑΠ Optical Materials SiC 100% 99% 94% 92% LASF35 101% ^4%~ 85% 81% BK7 ---~_ ~~76% Γ 76% ---- -- 65% 57% Table III MV shows that the optical cone element does not have to be optically combined over the entire area of the emitting surface of the light emitting diode to efficiently extract light.

The table also shows that the environmental volume between the small tapered elements can have a low refractive index without causing a substantial reduction in extraction efficiency. Including the use of a light-emitting diode and a re-emitting semiconductor construction - illumination: the source of the polar body assembly is expected to have similar results. The environmental volume can be filled with - material to increase the efficiency of the extraction. The filler material can be a fluid, an organic or inorganic polymer, an inorganic particle filled polymer, a salt or a glass. Suitable inorganic particles include oxidized, oxidized, and zinc sulfide. Where appropriate, the body of money contains any organic fluid that is stable at the operating temperature of the luminescent H and that is stable to the light produced by the luminescent diode. In some cases, the fluid should also have low conductivity and ion concentration. Suitable fluids include water, i-hydrocarbons, and aromatic and heterocyclic hydrocarbons. A filler material can also be used to bond the optically tapered element to the light emitting diode assembly. At least a portion of the space between the optical elements can have an applied metal to distribute current to the light emitting diode assembly, < remove heat from the light emitting diode assembly, or both. Because metals have measurable light absorption, it is desirable to minimize absorption losses. This can be accomplished by the following method 121770.doc -45. 200807769: minimizing the contact area of the metal with the light emitting diode assembly, and by the metal and the surface of the light emitting diode assembly, the optical component Or introducing a low refractive index material between the two to reduce the optical fit with the metal. For example, the contact area can be patterned using an array of metal contacts surrounded by a low refractive index material that conducts electricity with an upper metal layer. Zhu Jian (for example) referenced above, the 667 announcement. Suitable low refractive index materials include gases or vacuum, carbon gas compounds (e.g., fluorine inerts (fWinert) available from Minni & (4) San Francisco, St. Paul), water, and hydrocarbons. The metal can extend into the medium surrounding the optical element 'where heat can be removed. Fluid may also be provided between the tapered elements to remove additional heat. The array of optically tapered elements can be in a square array (e.g., Μ, ..., etc.), a rectangular array (e.g., 2x3, 2x4, etc.) or a hexagonal array. Screening optical hybrid components can have square, rectangular, triangular, circular or other shapes of desired shape on their input or output surfaces. The array may extend over the entire emitting surface of the light emitting diode, or beyond the entire emitting surface, or only over portions thereof. Use low softening temperature solder glass, softening inorganic coating (such as zinc sulfide, high refractive index 俨〃 (4) sheep body, polymer, ceramic filling polymerization) or faulty to provide optical components with a very smooth and flat surface And the body 'and mechanically holding the light-emitting diode assembly on the surface of the I-input, the tapered element can be attached to the emitting surface of the light-emitting body. The figure depicts another light emitting diode package 9A having a plurality of optical elements 4 and a patterned low refractive index layer. The patterned low refractive index layer % comprises an aperture as shown in 121770.doc - 46 - 200807769 S, on which optical elements 92, 94 are placed in optical contact with the emitting surface 12a of the light emitting diode assembly. The layer % is also in contact with the emitting surface 12a of the light emitting diode assembly and the side surface 12 of the light emitting diode assembly. The light emitting diode package 90 further includes a metal contact 98 shown as being over a portion of the low refractive index layer 96. Although not shown in FIG. 7, patterned layer 96 is also patterned adjacent metal contacts 98, and metal contacts 98 desirably pass through holes in layer 96 to provide electrical contacts to light emitting diode assembly 12. . A second electrical contact can be provided at another location on the LED assembly, depending on the wafer design. The pickers and other optical components that can be used with the disclosed light sources can have a variety of shapes, sizes, and configurations. For example, converging optical elements have also been found to be useful for angled knives that efficiently extract light from the illuminating diode assembly and modify the emitted light. The light-emitting diode assembly of such a package may be a combination of a light-emitting diode/re-emissive semiconductor construction, as a separate component or as a semiconductor single 7L, as described in the above or currently pending US patent application 11/009217 or The manners cited in USSN 1 1/009241 are incorporated herein by reference. These applications are capable of efficiently extracting light from the light-emitting diode assembly with a 4 optical 7L piece and modifying the angular distribution of the emitted light. Each of the optical components is optically coupled to the emitting surface of the light emitting diode assembly (or array of light emitting diode components) to efficiently extract light and modify the emission pattern of the emitted light. Sources of light-emitting diodes containing optical components can be used in a variety of applications, including, for example, liquid: backlights or backlight marks in displays. Light sources including the converging optical elements described herein are suitable for use in backlights, 121770.doc-47-200807769 edge illumination, and direct illumination construction. Wedge optics are particularly useful for edge-lit backlights where the source is disposed along an outer portion of the backlight. Pyramidal or conical converging optical elements are particularly suitable for direct illumination. Such light sources can be used as a single light source component or can be configured in an array depending on the particular backlight design. For direct illumination backlights, the light sources are typically disposed between a diffused or specular reflector and a stack of films that may include a ruthenium film, a diffuser, and a reflective polarizer. These light sources can be used to direct the light emitted from the light source towards the viewer, which has the most useful range of viewing angles and has uniform brightness. Exemplary enamel films include brightness enhancement films such as beftm available from 3M Company, St. Paul, Minnesota. Exemplary reflective polarizers include DBEFTM, also available from 3M Company, St. Paul, Minnesota. For edge-lit backlights, the source can be fixed to inject light into a hollow or solid light guide. The light guide generally has a reflector and a top stack below, as explained above. Figure 14 is a schematic side elevational view of a light source in accordance with an embodiment. The light source includes an optical component 99 and a light emitting diode assembly 12. The optical 70 member 99 has a triangular cross section having a base 120 and two converging sides 140' that are joined to oppose the base 120 to form a apex 130. The apex can be tied a little (as shown in Fig. 14 at 13 〇 Show), or may be pure, as in a truncated triangle (shown by dashed line 135). A blunt vertex can be flat, round, or a combination thereof. The apex is smaller than the substrate and preferably resides on the substrate. In some embodiments, the apex is only 20% of the size of the substrate. Preferably, the apex is only 1% of the size of the substrate. 121770.doc -48- 200807769 In FIG. 14, the apex 13 is above the center of the substrate 120. However, it is also contemplated that the apex is not centered or deviated from the center of the substrate. Optical element 99 is optically coupled (or optically contacted) to light emitting diode assembly 12 to capture light emitted by light emitting diode assembly 12. The primary emitting surface 12a of the LED assembly 12 is substantially parallel to and in close proximity to the substrate 120 of the optical component 99. Light-emitting diode assembly 12 and optical element 99 can be optically coupled in a number of ways, including bonded or non-joined configurations, which are described in greater detail below. The convergence sides i4〇a to i4〇b of the optical element 99 are used to modify the emission pattern of the light emitted by the LED assembly 12, as indicated by arrows 16 (^ to 160b in Fig. 14). A typical bare illumination II The polar body assembly emits light in a first emission pattern. In general, the first emission pattern is generally forward-emitting or has a substantially forward-going component. A converging optical element (such as optical component 99 depicted in Figure 14) will The first emission pattern is modified to a second different emission pattern. For example, the wedge-shaped optical element directs light emitted by the light-emitting diode assembly to produce /, a side emission pattern of one of the petals. Figure 4 shows the light-emitting diode An exemplary ray 16 (^ to 16 〇b) of the optical element 99 emitted by the body assembly and entering the substrate. A ray emitted in a direction that forms a relatively low angle of incidence with the convergence side M〇a will exit the optics Element 2 高 high refractive index material and enters the surrounding medium; I (such as air) is refracted. Exemplary ray 1 shows one of such rays incident at a smaller angle with respect to the vertical line. At a larger angle of incidence (; or Specialized in the corner of the corner The different rays will be totally internally reflected on the first convergence side (140a) they encounter. However, in a convergent optical element 121770.doc -49 - 200807769 (such as the converging optical element illustrated in Figure 14) The reflected light will then encounter the first angle of the person with the rut: the convergence side (worker Yang), where the reflected light will be refracted and allowed to leave the optical element. - Exemplary light 160b illustrates one such The light path can be modified to a second different light emission pattern. For example, the convergence light tl can be used to emit light. The pattern is modified into a second general side light-emitting pattern. In other words, the high-refractive-index optical element can be shaped to direct the light emitted by the money-polar body assembly to produce a side-emitting pattern of the right-side light-emitting unit. Symmetrical (for example, shaped as a cone): the resulting light-emitting pattern will have an annular distribution, ie the intensity of the emitted light will be concentrated in a circular pattern around the optical element. Dry TL parts For a wedge (example #see Figure 16), the side-hair pattern will have two lobes, ie the light intensity will be concentrated in two zones. In the case of a symmetrical wedge, the two 敎 positions in the optics (four) On the opposite side (opposing zone). For an optical element having a plurality of convergent sides, the θ ' side emission pattern will have a plurality of corresponding lobes. For example, for an optical component shaped as a four-sided pyramid, the obtained The side emission pattern will have four lobes. The side emission pattern may be symmetrical or asymmetrical. When the apex of the optical element is placed incorrectly with the substrate or emitting surface: 'will produce an asymmetrical pattern. Various changes to such configurations and shapes for producing various desired different emission patterns are known. In some embodiments, the side emission pattern has an intensity distribution that has at least 3G. The maximum polar angle, as measured in the intensity line plot. In other embodiments - 121770.doc 200807769 - the side emission pattern has at least 30. The intensity of the center of the pole is divided into your division. The optical elements disclosed so far may also have other intensity distributions, including "maximum polar angles" and/or intensity distributions of polar angles at the center of the polar angles of 45 and 60. The light-emitting elements may have various forms. Each optical element has a soil bottom vertex and at least one convergence side. The substrate can have any shape (eg square, rounded), symmetrical or asymmetrical, regular: no, and the apex can be a point-point, a line Or - surface (in the case of a blunt vertex + tube specific convergent shape (9) 'the vertex is smaller than the base in terms of the area of the crucible, so the (equal) side converges from the base towards the vertex. A convergent optical element can also be shaped as a pyramid, a cone, a wedge or a group of mouths. Each of these shapes is also truncated near the apex to form a blunt vertex. The converging optical element may also have a multi-faceted shape with a a polygonal base and at least two converging sides. For example, a pyramid or wedge optical element may have a rectangular or square base and four sides, wherein at least the sides The two sides are convergent sides. The other sides may be parallel sides or may be divergent or convergent. The shape of the base need not be symmetrical and may be shaped, for example, as a trapezoid, a parallelogram, a quadrangle or other polygons. In an embodiment, a converging optical element can have a circular, elliptical or irregular shape but a continuous substrate. In such embodiments, the optical element can be considered to have a single convergence side. For example, having a An optical component of the circular substrate can be formed as a cone. Generally, a converging optical component includes a substrate, an apex (at least partially) resident on the substrate, and the apex and the substrate are bonded to complete 121770 .doc -51 200807769 One or more convergence sides of the solid. Figure 15a shows a converging optical element 2 shaped to have a base 220, a vertex 230 and four sides of the four sides of the gold tower. A specific embodiment. In this particular embodiment, the substrate 22 can be rectangular or square and the apex 230 is at the center of the substrate. The projection (the projection of the apex on a line 2 垂直 perpendicular to the plane of the substrate is above the center of the substrate 22 )). Figure 15a also shows the light emitting diode assembly 12 having proximity and parallel to the optical element 2 The emitting surface 12a of the substrate 22 is formed. The light emitting diode assembly 12 and the optical element 200 are optically coupled on the emitting surface (substrate interface). The optical surface can be achieved in several ways as described in more detail below. For example, The light emitting diode assembly and the optical component can be bonded together. In Figure 15a, the substrate and the emitting surface of the light emitting diode assembly are shown to substantially match in size. In other embodiments 'The substrate may be larger or smaller than the emitting surface of the light emitting diode assembly. FIG. 15b shows another embodiment of a converging optical element 2〇2. Here, optical element 202 has a hexagonal base 222, a blunt vertex 232, and eight sides 242. The sides extend between the base and the apex and each side converges toward the apex 232. The apex 232 is blunt and forms a surface that is also shaped as a hexagon but smaller than the hexagonal substrate. Figure 15c shows another embodiment of optical element 204 having two converging sides 244, a base 224, and a vertex 234. In Figure 15c, the photonic element is shaped as a wedge and the apex 234 forms a line. The other side system is shown as a parallel side. Viewed from the top, the optical element 2 〇 4 is described in Figure 17d. Alternative embodiments of the wedge shaped optical element also include shapes having a combination of convergence and divergence sides, such as optical element 2〇6 shown in FIG. In the particular embodiment of Figure 16, the wedge shaped optical element 2〇6 is like an axe. Two diverging sides 142 are used to calibrate the light emitted by the light emitting diode assembly. The two converging sides 144 converge at the top to form a vertex 132 that, when viewed from the side, is shaped as a line that resides above the substrate (see Figure 14), but when as shown in Figure 16 (or Figure 17e) The portion shown extends to a portion that extends beyond the substrate. The convergence side 144 allows light emitted by the LED assembly 12 to be redirected to the sides, as shown in FIG. Other embodiments include a wedge shape in which all sides are proud, for example as shown in Figure 17f. The optical element can also be shaped as a cone having a circular or elliptical base, (at least partially) an apex that resides above the substrate, and a single converging side that joins one of the vertices and the apex. The vertices may be one point, one line (straight line or curved line) or they may be blunt as in the above description of the gold drawing and the wedge shape, thereby forming a surface. Figures 17a through 17i show top views of several alternative embodiments of an optical component. Figures 17a through 17f show a particular embodiment of the apex system above the center of the substrate. Figures 17g through 17i show an embodiment of the asymmetric optical element with the apex skewed or slanted and not above the center of the substrate. Figure 17a shows a pyramidal optical element having a square bottom, four sides and a pure apex 2 3 a above the center of the substrate. Figure 17h shows a pyramidal optical element having a square base, 121770. Doc -53- 200807769 Four sides and a blunt vertex 23〇h off center. Figure 17b shows a specific embodiment of an optical component having a square substrate and shaped as a blunt vertex 23〇b of a circle. In this case, the converging sides are curved so that the δ meta-square base is joined to the circular apex. Figure 17c shows a pyramidal optical element having a square base and four triangular sides that converge at a point to form a apex 230c that is above the center of the substrate. Figure 17i shows a pyramidal optical element having a square base, four triangular sides that converge at a point to form a vertex 23Οι' that is skewed above the substrate (not above the center of the substrate). Figures 17d to 17g show wedge shaped optical elements. In Figure i7d, the apex 23〇d forms a line 'which resides above the substrate and above the center of the substrate. In Figure 17e, apex 230e forms a line that is above the center of the substrate and partially resides above the substrate. The apex 23 〇e also has a portion that extends beyond the substrate. The top view depicted in Figure 17e can be a top view of the optical component shown in the perspective view of Figure 16 and described above. Figure 7f and Figure 17g show an alternative embodiment of a wedge-shaped optical component having a vertex forming one line and four converging sides. In Fig. 17f, the apex 23〇f is above the center of the substrate, and in Fig. 17g, the apex 23〇g is skewed. Figures 18a through 18c show side views of an optical component in accordance with an alternative embodiment. Figure 18a shows a specific embodiment of an optical component having a substrate 35〇 and sides 340 and 341 that begin on the substrate 35〇 and converge toward a vertex 330 that resides above one of the substrates 350. These sides may converge toward a blunt vertex 331 as needed. Figure 18b shows another embodiment of an optical element 121770.doc-54-200807769 having a substrate 352, a converging side 344, and a side 342 perpendicular to the substrate. The two sides 342 and 344 form a vertex 332 that resides above the edge of the substrate. Optionally, the vertex can be a blunt vertex 3 3 3 . Figure 1 8 c shows a side view of an alternative optical component having a generally triangular cross-section. Here, the base 325 and the sides 345 and 347 generally form a triangle, but the sides 345 and 347 are non-planar surfaces. In Figure 18c, the optical element has a curved left side 345 and a small planar right side (i.e., it is a combination of three smaller flat portions 347a through 347c). The sides may be curved, segmented, faceted, raised, recessed, or a combination thereof. Such forms of side can still be used to modify the angular emission of the extracted light, similar to the plane or flat side described above, but provide an increased degree of customization of the final light emission pattern. Figures 19a through 19e illustrate alternative embodiments of optical elements 420a through 420e having non-planar sides 440a through 440e extending between each of the substrates 422a through 422e and the top ends 43a through 430e, respectively. In Figure i9a, optical element 420a has a side 440a that includes two faceted portions 441a and 442a. Portion 442a near substrate 422a is perpendicular to substrate 422a, while portion 44la converges toward apex 430a. Similarly, in Figs. 19b to 19c, the optical elements 420b to 420c have sides 440b to 440c which are formed by joining the two portions 44b to 441c and 442b to 442c, respectively. In Fig. 19b, the converging portion 441b is recessed. In Fig. 19c, the arrogant portion 441c is convex. Figure 19d shows an optical element 420d having two sides 440 formed by the joint portions 4414 and 442 (1. Here, the portion 442d near the base 422d converges toward the blunt apex 430d, and the topmost portion 121770 .doc -55- 200807769 points 441d are perpendicular to the surface of the blunt apex 430d. Figure OB shows an alternative embodiment of an optical element 420e having a curved side 440e. Here, the side 440e is S-shaped, but generally The blunt apex 43 〇e converges. When the side systems are formed using two or more portions, as shown in Figures 9a to [%, it is preferred to configure the portions so that the side generally still converges, although It may have a non-convergent portion. Preferably, the size of the substrate matches the size of the light emitting diode assembly on the emitting surface. Figures 2A through 20d show exemplary embodiments of such a configuration. In Fig. 20a, an optical component having a circular substrate 55A is optically coupled to a light emitting diode assembly having a square emitting surface 57A. Here, the substrate and the emitting surface are provided by Diameter of the circular base 550a Matching 'd1', the diameter is equal to the diagonal dimension of the square emitting surface 5 70 & (also "(1"). In Figure 2A), an optical component having a hexagonal substrate 550b Optically coupled to a light emitting diode assembly having a square emitting surface 57〇b. Here, the height nhn of the hexagonal substrate 55〇b matches the height “h” of the square emitting surface 57〇b. In c, an optical component having a rectangular substrate 550c is optically coupled to a light emitting diode assembly having a square emitting surface 570c. Here, the width and width of the substrate and the emitting surface are matched. In 〇d, an optical component having a square substrate 550d is optically constrained to a light-emitting monopole assembly having a hexagonal emitting surface 57〇d. Here, the height of the substrate and the emitting surface is "h" Matching. Of course, a simple configuration in which the substrate and the emitting surface are identically shaped and have the same surface area also satisfies this criterion. Here, the surface area of the substrate is associated with the light emitting diode assembly 121770.doc • 56- 2 00807769 The surface of the circular base with a diameter of 1.4 mm is to be matched in size. It is also possible to make the size of the substrate slightly smaller than the size of the emitting surface. This can have advantages in the following cases. One is to minimize the apparent size of the light source as described in the commonly-owned U.S. Patent Application Publication No. 2006/0091411 (〇uderkirk et al.), which is entitled "High Brightness Light Emitting Diode Package" Another embodiment of a light source is shown in Fig. 2. The light source includes a converging optical 7G member 624 optically coupled to a plurality of light emitting diode assemblies 614a through 14c disposed in an array 612. This configuration may be particularly useful when red, green, and blue light emitting diodes are combined in the array to produce white light in the case of mixing. In Figure 21, optical element 624 has a converging side 646 to redirect light to the sides. Optical element 624 has a base 624 shaped as a square that is optically coupled to array 6丨2 of the light emitting diode assembly. The array 612 of light emitting diode assemblies also form a square shape (with sides 616). The optical elements disclosed herein may be fabricated by conventional means or by the use of precise grinding techniques, which are disclosed in the following patents: commonly assigned U.S. Patent Application Publication No. 2006/0094340 (〇uderkirk et al.), The name is "Processing of Optical and Semiconductor Components"; US Patent Application Publication No. 2006/0094322 (Ouderkirk et al.), entitled "Process of Light Emitting Array"; and U.S. Patent Application Serial No. 11/288,71 The name is "Array of Optical Components and Its Manufacturing Method" (Attorney's File No. 60914US002), filed on November 22, 2005. The disclosed optical component (specifically including the picker) is transparent and preferably has 121770.doc -58-200807769

: Relatively high refractive index. Suitable materials for optical components include, but are not limited to, mechanical materials such as south refractive index glass (for example, LSAT 35 Shoude glass available from Shoude North America, Inc., New York, and the sapphire). Zinc oxide, zirconia, diamond, antimony, sapphire, zinc oxide, diamond and carbon carbide are particularly useful because these materials also have a relatively high thermal conductivity (0.2 to 5.0 m Κ). The refractive index polymer or nanoparticle-filled polymer. Suitable polymers may be thermoplastic and thermoset polymers. Thermoplastic polymers may comprise polycarbonate and cyclic olefin copolymers. Thermoset polymers may be (1)+ Propylene I '% oxose, crushed resin and other polymers known in the art. Suitable pottery nanoparticles contain oxidative, oxidized, zinc oxide and sulfurized. /Refractive index of the light element η.) is preferably similar to the refractive index (ne) of the emitting surface of the light-emitting diode assembly. Preferably, the difference between the two is not more than 0.2 (|nc)-ne4〇.2)〇 The difference can be greater than necessary, as needed This depends on the materials used. For example, the emitting surface can have a refractive index of 1.75. Suitable optical elements may have a refractive index equal to or greater than the refractive index (ηβ ΐ.75) of ruthenium, including, for example, n 〇 y 9, η. . And 11. 22.3. As needed, 11. It may be lower than 1 (e.g., 11 (^1.7). Preferably, the refractive index of the optical element matches the refractive index of the primary emitting surface. In some embodiments, the optical element and the refraction of the emitting surface The rate can be numerically the same (nt) = ne). For example, a sapphire emitting surface with 1=176 can be matched to a sapphire optical component, or with an SF4 glass optical component with ~=ΐ76 (available from Elmsf〇rd, New York, under the trademark SF4, 121770.doc • 59-200807769 θ海The surface area of the emitting surface is matched. Similarly, when an optical component is coupled to an array of light emitting diode components, the size of the array on the emitting surface side is preferably comparable to the size of the substrate of the optical component. Again, the shape of the material does not have to match the shape of the substrate as long as it matches at least one dimension (eg, diameter, width, height, or surface area). Alternatively, the light emitting diode assembly on the emitting surface The size or the combined size of the array of light emitting diode components may be smaller or larger than the size of the substrate. Figures 19a and 19c show the emitting surfaces of the light emitting diode assemblies (4i〇a and 4i〇c, respectively) (respectively The size of 412a and 412c) is a specific embodiment matching the size of the substrate (422a and 422c, respectively). Figure 19b shows one of the emission surfaces 4丨2b having a larger than the substrate 422b. Body assembly 41〇b. Figure I9d shows an array 412d of light emitting diode assemblies having a combined size on the emitting surface 412d that is larger than the size of the substrate 42. Figure 19e shows an emission having a smaller than substrate 422e The surface 41 is formed by one of the light emitting diode assemblies 41 〇 e. For example, if the emitting surface of the far light emitting diode assembly has a square on the side of the melon, the optical element substrate can have a matching square. Having a 1 mm side. Alternatively, a square emitting surface can be optically coupled to a rectangular substrate having one of its sides sized to match the size of the emitting surface side. The non-matching side of the rectangle can be larger or smaller than the square. Alternatively, an optical element can be provided with a circular base having a diameter equal to the diagonal dimension of the emitting surface. For example, 'for the purposes of this application' a square emission of 1 mm x 1 mm 121770.doc -57- 200807769 Shoude North American company constructed) matching. In other embodiments, the optical element may have a refractive index that is higher or lower than the refractive index of the emitting surface. When: fabricated from a high refractive index material, the optical element extracts from the light of the light emitting diode assembly due to its high refractive index and modifies the light due to its shape to provide a trimmed light emission pattern. Configuration, but other known configurations are also contemplated' such as forming a beveled side surface that shapes the truncated pyramidal shaped LED assembly. i The electrical contacts of the light-emitting diode assembly are also based on simplicity and are not shown 'but can be provided in the crystal throughout the disclosure. The light-emitting diode assembly 12 is described based on simplicity, but is removed Other design features known in the art may be included in addition to the re-emitting structures described above. For example, the group of light-emitting diodes: may comprise distinct p-doped and n-doped semiconductor layers, buffer layers, substrate layers, and cover layers. A simple rectangular light-emitting diode set has been shown: Any form of grain m is known. In an exemplary embodiment, the light emitting diode assembly has two contacts that are disposed on the bottom surface in a "cladding" design. The present disclosure is not intended to limit the shape of the optical element or the shape of the light emitting diode assembly, but merely provides an illustrative example. When the minimum gap between one of the optical elements of a light-emitting diode assembly and an emitting surface is no greater than the attenuation wave, the optical element is considered to be optically coupled or optically contacted with the light-emitting diode assembly. The optical engagement can be achieved by placing the light-emitting diode assembly and the optical element physically tightly (four). FIG. 14 shows the surface of the emitter of the LED assembly 12. A gap 15 〇 is formed with the substrate 12 of the optical element 99. In general, the gap 15〇 121770.doc -60 - 200807769 is an air gap and is generally small for promoting hindered total internal reflection. For example, in Fig. 14, if the gap 150 is about the wavelength of light in the air, the substrate 120 of the optical element 99 is optically close to the LED assembly 12.

The surface 12a is emitted. Preferably, the thickness of the gap 15 is less than the wavelength of light in the air. In a light-emitting diode using a plurality of light wavelengths, the gap of 15 〇 is preferably at most the value of the longest wavelength. Appropriate gap sizes include 25 nm, 50 nm, and 1 〇〇 nm. Preferably, the gap is minimized, for example, by polishing the light emitting diode assembly and the input aperture or substrate of the optical component to optical flatness and bonding the wafers together. Further, the 'better line' gap 150 is substantially uniform over the contact area between the emitting surface 12a and the substrate 12", and the emitting surface 12a and the substrate 120 have less than 2 〇 nm (preferably less than 5 nm). Roughness. In such a configuration, light emitted from the illuminating cone or at an angle from the illuminating diode assembly 12, typically totally internally reflected on the illuminating diode assembly and air interface, will be transmitted to the optical Component 2 is in the middle. To facilitate optical coupling, the surface of the substrate 120 can be shaped to match the emitting surface 12& For example, the emitting surface 12a of the right LED assembly 12 is flat. If not, the substrate 120 of the optical component 99 can also be flat. The emitting surface of the right-hand LED assembly is curved (e.g., U-recessed), and the substrate of the optical component can be shaped to fit the surface (e.g., slightly raised). The size of 120 may be less than, greater than, or greater than the emitting surface (2) of the LED assembly. The substrate MO may be the same or different in cross-sectional shape as the light-emitting diode assembly 12. For example, the photodiode assembly can have a square emitting surface and the optical element 121770.doc • 61 - 200807769 has a circular base. Those skilled in the art should be aware of other changes. Appropriate gap sizes include 100 nm, 50 nm, and 25 nm. Preferably, the gap is minimized, e.g., where the light emitting diode assembly and the input aperture or substrate of the optical component are polished to optical flatness and the wafers are bonded together. The optical component and the light emitting diode assembly can be joined together by applying a high temperature and pressure to provide an optically coupled configuration. Any known wafer bonding technique can be used. The exemplary wafer bonding technique is described in the US Patent Application Bulletin 2〇〇6/〇〇9434〇), the name of the announcement is “Optical and semiconductor components manufacturing process,. In the case of limited gaps, Optical coupling is achieved or enhanced by adding a thin optically conductive layer between the emitting surface of the light emitting diode component and the substrate of the optical component. Figure 22 shows, for example, Figure 4 but with A thin optically-conductive layer 66 in the gap 15〇 is an optical component of the light-emitting diode assembly. A portion of the light-emitting diode assembly is a side view. Like the gap 15〇, the thickness of the optically conductive layer 660 can be 100 nm, 5 〇 nm, Preferably, the index of refraction of the layer is closely matched to the refractive index of the emitting surface or the optical element. The optically conductive layer can be used for bonding and non-bonding (mechanical decoupling). Configuration. In a bonding embodiment, the optically conductive layer can be any suitable t-bonding agent that transmits light, including (for example, a transparent adhesive layer, an inorganic film, a temperable glass frit, or other similar attractant. Joint group An additional example of the state is described in, for example, U.S. Patent No. 2, 2, No. 030,194, the name of which is a light-emitting diode that is improved in light extraction efficiency (Camras et al.) (10)^121770.doc -62-200807769 In the non-connected & embodiment, a #-代触4 first-pole component can be lightly coupled with the optical component light without Any adhesive or other bonding agent is used between the light emitting diode assembly and the optical element. Non-bonding embodiments allow the light emitting diode assembly and the optical element to be mechanically decoupled and allowed to move independently of each other. The optical component can be moved in an angular direction relative to the light emitting body, and the member. In another example, the optical component and the light emitting body assembly can be freely expanded because each component is changed during operation. Heat. In such mechanical decoupling systems, most of the deflection or vertical stress generated by expansion does not transfer from one component to another. In other words, the movement of one component does not mechanically affect other components. It may be particularly desirable in the following situations: the luminescent material is fragile, there is an expansion coefficient mismatch between the luminescent diode component and the optical component, and the light emitting diode is repeatedly turned on and off. By placing the optical component The optical proximity of the light-emitting diode assembly (with only a small air gap between them) can create a mechanical decoupling group. The air gap should be small enough to promote hindered total internal reflection, as explained above. 0 or 'as shown in FIG. 22, if a thin optically conductive layer 66 (eg, an index matching fluid) allows the optical element 99 and the light emitting diode assembly 12 to move independently', then the optical element and the light emitting diode can be The thin optically conductive layer is added to the gap 150 between the body components. Examples of materials suitable for the optically conductive layer 66A include index matching oils, as well as other liquids or gels having similar optical properties. Optically conductive layer 660 can also be thermally conductive, as desired. 121770.doc -63 · 200807769 The optical component and the light emitting diode assembly can be packaged together using any known packaging material to make the final light emitting diode package or light source. Encapsulation of the optical component and the light emitting diode assembly can be provided in a manner to hold it together in a non-engaged embodiment. The non-joined configuration of the non-joined optical element is described in the commonly-owned U.S. Patent Application Publication No. 20/6/009, 784 (Conn〇r et al.). Package,,. The optical element can be fabricated in a single configuration (e.g., from a dicing knife of a single piece of material) or can be fabricated by joining two or more sections together in a composite construction. A first segment is desirably optically contacted with the light emitting diode assembly and is fabricated from a first optical material having a high refractive index (preferably approximately equal to the light emitting diode assembly on the emitting surface) Refractive index), and optionally high thermal conductivity and/or high thermal stability. In this regard, high thermal stability means having about 600. 〇 or higher decomposition temperature material. The thickness of the first segment is preferably optically thick (e.g., effectively at least $ microns, or 10 times the wavelength of light). Carbonized carbide is also electrically conductive and can also provide electrical contacts or circuit functions. If the scattering is limited to a position near the input end of the optical element or near the substrate, the scattering within the optical element is acceptable. However, fabricating an optical component of sufficient length to have a (4) glaze from the -I optical two (four) component handle would be relatively expensive and time consuming. Another challenge in the manufacture of a one-piece optical component is that the material benefits may be relatively low, and the form factor may force the light-emitting diode assembly to be individually assembled with the optical component. Base 121770.doc -64-200807769 It may be advantageous to divide the optical component into two (or more) segments, which are fabricated from different optical materials to reduce manufacturing costs. σ a second segment is bonded to the first segment and is fabricated from a second optical material. The second optical material may have a lower material cost and is easier to manufacture than the first optical material. The optical material can have a lower index of refraction, a lower thermal conductivity, or both relative to the first optical material. For example, the second optical material can include glass, polymer, ceramic, ceramic nanoparticle-filled polymer, and Other optically transparent materials. Suitable glass contains glass containing oxides of lead, zirconium, titanium and niobium. These glasses can be made from compounds containing titanates, acid salts and stannates. The nanoparticle comprises oxidative error, titanium oxide, oxidized sulphur, and zinc sulfide. Optionally, a third segment of the second optical material may be joined by the second segment to assist the hair in one step. The light of the photodiode is coupled to the outer %i brother. In a specific embodiment, the refractive indices of the three segments are configured such that ηριιρη3, thereby minimizing the total Fresnel surface reflection associated with the optical element. A non-light source can be a component or a key component of a graphics display device. The device is such as a large or small screen video monitor, a computer monitor or display, a television, a telephone device or a telephone device display, a personal digital assistant or a personal digital device. Assistant display, pager or pager display, calculator or meter display, gaming or game console display, toy or toy display, big or small appliance or large or small appliance display, car dashboard or steam 121770. Doc -65- 200807769 Car dashboard display,, left-hand board or ship dashboard ^ Car interior display, ship instrument record empty injury sacrifice, Jie Jie ',, 'Do not steal, ship interior or ship internal display, navigation: $ Dashboard display, aeronautical internal or aeronautical internal display control or traffic control I display, advertising display, advertising mark. ? Mody source 3, a liquid crystal ^ based display (LCD) or as a backlight of the display state of substantially similar report the + -., One component or the state in certain critical components

By matching the color emitted by the semiconductor device to the color filter of the liquid crystal display, Du and Si do adapt the semiconductor device to use the backlight for a liquid crystal display. The disclosed light source can be a component or a key component of a lighting device such as a stand-alone or built-in lighting fixture or lamp, a landscape or architectural lighting fixture, a hand or vertical mounting light, a car headlight or a taillight, Automotive interior lighting fixtures, automotive or non-vehicle signaling devices, road lighting, = central control (four) mounting, marine lights or signaling devices or internal lighting fixed-air lights or signaling devices or internal lighting fixtures, large or small Appliances or large or small appliance lights, etc.; any device or component used as a source of infrared, visible or ultraviolet radiation. In some cases, a light source comprises (4) a light-emitting diode capable of 'a first wavelength emitting light, (b) a re-emitting semiconductor structure comprising a first unpinned in a pn junction a potential well, wherein the re-emitting semiconductor construction has an emitting surface; (c) a patterned low refractive index layer in optical contact with a first portion of the emitting surface, wherein the patterned layer has a first index of refraction An alpha and (4) element having an input surface optically in contact with a second portion of the emitting surface 121770.doc-66 - 200807769 wherein the optical element has a second index of refraction above the first index of refraction . In some cases the pattern: a low refractive index layer provides total internal reflection on the emitting surface for at least some of the light generated within the source. > In some cases, a light source comprises: (4) a light emitting diode assembly, i comprising: (1) a light emitting diode capable of emitting light at a first wavelength; and (π)-reemitting semiconductor structure , 纟 includes a -potential well that is not positioned within the junction, wherein the re-emitting semiconductor construction has an emission surface; (b) forcefully reflects at least some of the light generated by the LED assembly back to a member of the light emitting diode assembly, wherein the reflective member is in optical contact with a first portion of the emitting surface; and (4) an optical element having a different emitting surface than the first portion An input surface for two parts of optical contact. In some cases, a light source comprises: (4) a light-emitting diode assembly comprising: (1) a light-emitting diode capable of emitting light at a first wavelength; and (u) a re-emitting semiconductor structure comprising a potential well not positioned within a pn junction, the re-emitting semiconductor construction having a __emissive surface, and (b) a quasi-optical element having an input surface and an output surface in some cases The input surface is in optical contact with at least a portion of the emitting surface. In some cases, the optical component includes a first portion that includes the input surface and is comprised of a first material. In some cases, the optical component includes a second portion, & includes the output and is comprised of a second material. In some cases, the first material has a refractive index greater than the refractive index of the second material. In some cases, the 121770.doc -67- 200807769 portion has a thermal conductivity greater than the thermal conductivity of the second material. In some cases, a light source comprises: (4) a light-emitting diode assembly, comprising: (1) a light-emitting diode capable of emitting light at a first wavelength; and (8)-re-emitting semiconductor structure, comprising Not positioned at a pn junction. (d) - potential well 'where the re-emitting semiconductor construction has an emission meter _ ® ; and an optical component, each of which has an input surface. In some cases, the optical element is sized so that the input surfaces are spaced apart from each other and in optical contact with different portions of the emitting surface. In some cases, a light source includes: (4) a light emitting diode assembly including a first potential well positioned within the -pn junction and a second potential well not positioned within a junction surface, wherein The light emitting diode assembly has an emitting surface, (b) a patterned low refractive index layer in optical contact with one of the emitting surfaces, wherein the patterned layer has a first refractive index; and (4) a $学元彳 having an input surface in optical contact with a second portion of the emitting surface. In some cases, the optical element has a second index of refraction that is higher than the first index of refraction. In some cases, the patterned low refractive index layer provides total internal reflection on the emitting surface for at least some of the light generated within the source. 2 In some cases, a light source comprises: (a) a light-emitting diode assembly comprising a first potential well positioned in a splicing surface and not positioned in a {Η! junction surface ^ second potential a well, wherein the light emitting diode assembly has an emitting surface; (b) a member for internally reflecting at least some of the light generated by the light emitting diode assembly back into the light emitting diode assembly, wherein Reflection 121770.doc • 68 - 200807769 The component is in optical contact with the first portion of the 4th emitting surface; and (4) an optical element having an optical contact with the second portion of the emitting surface different from the first portion Enter the surface. In some cases, a light source includes: (a) a light emitting diode assembly including a first potential well positioned within a pn junction and a -th potential well not positioned within a splicing surface 'where the light emitting diode assembly has an emitting surface; and (b) a calibrating optical element having an input surface and an output meter © in some cases 'the input surface and at least a portion of the emitting surface are optical contact. In some cases, the optical component includes a first portion that includes the input surface and is comprised of a first material. In some cases the optical element comprises a second portion, # comprising the output surface and consisting of a second material. In some cases, the first material has a refractive index greater than the refractive index of the second material. In some cases, the first material has a thermal conductivity greater than the thermal conductivity of the second material. In some cases, a light source includes: (a) a light emitting diode assembly including a first potential well positioned within a pn junction and a second potential not positioned within a junction plane a well wherein the light emitting diode assembly has an emitting surface; and (b) a plurality of optical elements, each of which has an input surface. In some cases, the optical component is sized such that the input surfaces are spaced apart from each other and in optical contact with different portions of the emitting surface. In some cases, a light source includes: a light emitting diode capable of emitting light at a first wavelength and having an emitting surface; (b) a re-emitting semiconductor structure including not positioned within a pn junction a potential well; (c) a 121770.doc -69-200807769 patterned low refractive index layer having a first refractive index in optical contact with a first portion of the emitting surface; and (d) An optical element having an input surface in optical contact with a second portion of the emitting surface. In some cases, the optical element has a second index of refraction that is higher than the first index of refraction. In some cases, the patterned low refractive index layer provides total internal reflection on the emitting surface for at least some of the light generated within the source. In some cases, a light source includes: a light emitting diode assembly comprising: (i) a light emitting diode capable of emitting light at a first wavelength and having an emitting surface; and (Π)- a semiconductor structure that emits a potential well that is not positioned within a pn junction; (b) for internally reflecting at least some of the light generated by the light emitting diode assembly back to the light emitting diode assembly a member, wherein the reflective member is in optical contact with a first portion of the emitting surface, and (c) an optical member having optical contact with a second portion of the emitting surface different from the first portion An input surface. In some cases, a light source comprises: (a) a light emitting diode assembly comprising: (1) a light emitting diode capable of emitting light at a first wavelength and having an emitting surface; and (ii) repeatedly A semiconductor structure that emits a potential well that is not positioned within a pn junction; and (b) a calibration optical component having an input surface and a wheeled surface. In some cases, the input surface is in optical contact with at least a portion of the emitting surface. In some cases, the optical component comprises n minutes, comprising the input surface and consisting of a first material. In some cases, the optical component includes a second portion that includes the output surface and is comprised of a second material set 121770.doc • 70· 200807769. In some cases, the first material has a greater than the first The refractive index of the two materials - the refractive index. In some cases, the first material has a thermal conductivity greater than the thermal conductivity of the second material. In a certain case, a light source comprises: 0) - a light-emitting diode assembly, wherein: • a package 3 · (1) a light-emitting diode capable of emitting light at a first wavelength and having an emission surface; (9) a re-emitting semiconductor construction comprising a potential well within a non-positioned 2-pn junction; and (...a plurality of optical elements, the two female-optical 7L members each having an input surface. In some cases, the The photon-pieces are sized so that the input surfaces are spaced apart from each other and are in optical contact with different portions of the emissive surface. In some cases, the -light source comprises (4) - a light-emitting diode capable of a first wavelength emitting light; (b) a re-emitting semiconductor structure comprising a potential well not positioned within a pn junction and having an emitting surface, and (0 optical picker having the emitting surface An input surface for optical contact. In some cases, a light source includes ya) a light emitting diode assembly including a first potential well positioned within a pn junction and not positioned within a splicing surface a second potential well, wherein the light emitting diode group The device has an emitting surface, and (b) a light picker having an input surface in optical contact with the emitting surface. In some cases, the light source comprises (4) a light emitting diode capable of a first wavelength emitting light and having an emitting surface; (b) a re-emitting semiconductor structure comprising a potential well not positioned within a pn junction, and (c) a light picker having An input table for optical contact of the emitting surface 121770.doc -71 - 200807769 Face 0 In some cases, one open, the original spoon eight · γ, the special contains: (a) - the light-emitting diode is at a first wavelength a semiconductor structure that emits light and re-emits from /, about (b), includes a potential well that is not positioned within the -pn junction and has an -emitting surface; and (4)-patterned low refractive index layer, A first portion of the first emitting surface that is less than all of the emitting surface is in optical contact. In some cases, the layer has a refractive index that is lower than the refractive index of the emitting surface.

In some cases, a light source includes: (4) a light-emitting diode assembly, a first-potential well positioned in a -pn junction, and a second potential well not in a pn junction. Wherein the light emitting diode assembly has an emitting surface, and (b)-cases a low refractive index layer that is in optical contact with the __ portion of the emitting surface that is less than all of the emitting surface. In some cases, the patterned layer has a refractive index lower than the refractive index of the emitting surface. In some cases, a light source comprises: (4) a light emitting diode capable of emitting light at a first wavelength. And having an emitting surface; (b) a re-emitting semiconductor structure comprising a potential well not positioned within a pn junction and (C) a patterned low refractive index layer & less than the emitting surface All of the first portion of the emitting surface is in optical contact. In some cases, the patterned layer has a refractive index that is lower than the refractive index of the emitting surface. In some cases, a drawing display or a lighting device includes the light source. A person skilled in the art will recognize the various modifications and variations of the present invention without departing from the scope and spirit of the invention, and it should be understood that the invention is not limited to the illustrative embodiments set forth above. 121770.doc -72- 200807769 [Simple description of the diagram] The conduction band and price of the semiconductor in the two-system-structure ▼. The layer thickness is not to scale; 千千频图2 is a graph showing the human and band gap energies of various Π-VI binary compounds; u Meng's lattice constant Fig. 3 is a curve showing the spectrum of light emitted from the device Figure 4 is a diagram of a structure in the circumstance of electricity, electricity, towering ... Conductive frequency band and valence band flat frequency map, layer thickness is not to scale; 、, surface diagram 6 series has a brightness enhancement layer Illustrated diagrams of the light-emitting diode package, Figures 7 and 8 are schematic cross-sectional views of the brightness-enhanced diode package; a plurality of illumination patterns of the element:: a graph 'before the display and a light-emitting diode assembly Emissive table: modeled brightness and light output of the light-emitting diode assembly as a function of footprint size of the tapered element; Figures 10 through 12 are schematic cross-sectional views showing the illumination using a composite tapered element Pole body package, and pi 1 9 Figure 12 further shows a plurality of tapered elements coupled to a light emitting diode assembly; Figure 13 is a schematic cross-sectional view of a brightness enhancement layer and a plurality of optical pole body packages; Figure 14 shows a optical component Figure 15a to 15c are perspective views of additional optical components; Figure 16 is a perspective view of a light source having another optical component; 121770.doc -73· 200807769 17a to 17i are top views of additional optical components; Figures 18a to 18c are schematic front views illustrating alternative optical components; Figure 1% to 1% are schematic side views of additional light sources incorporating optical components and light emitting diode components; And the bottom view 20a to 20d are diagrams of the optical element/light emitting diode assembly; FIG. 21 is an array of optical elements and a light emitting diode assembly; and the perspective view 22 is another optical element / light emitting A button view of the polar body assembly. Partial side of S [Main component symbol description] 1 Support layer 2 Absorption layer 3 Single potential well 4 Absorption layer 5 Support layer 6 Absorption layer 7 Single potential well 8 Absorption layer 9 Support layer 10 Light-emitting one-pole package 10a Light-emitting one Package 11 intermediate undoped layer 12 light emitting diode assembly 121770.doc -74. 200807769 12f light emitting diode die 12a emitting surface 12a' front emitting surface 12b bottom surface 12c side surface 12c, oblique side surface 13 undoped Heterogeneous layer 14 p-doped layer/rack 16 transparent optical element 18 patterned low refractive index layer 18a low refractive index layer 20 aperture 20a aperture 22 emission point source 24 light 30 light emitting diode package 32 transparent optical element 32a input surface 32b Output Surface 34 Aperture 36 Air Gap 40 Light Emitting Diode 42 Optical Element 42a Input Surface 121770.doc -75- 200807769 42b Output Surface 42c Side Surface 42d Side Surface 44 Aperture 46 Air Gap 50 Curve 52 Curve 60 LED Package 62 optical element 64 first section 64a input surface 64b output surface 64c reflective side surface 64 d reflective side surface 66 second section 66a input surface 66b output surface 66c reflective side surface 66d reflective side surface 70 light emitting diode package 72 composite 74 first section 74a input surface 74b output surface 121770.doc - 76 - 200807769 76a Input surface 76b Output surface 78 Coating 80 Light-emitting diode package 82 Optical element 82a Input surface 82b Output surface 83 Clearance 84 Optical element 84a Input surface 84b Output surface 85 Clearance 86 Optical element 86a Input surface 86b Output surface 88 Tapered element 88a Input surface 88b Output surface 90 Light-emitting diode package 92 Optical element 94 Optical element 96 Patterned low refractive index layer 98 Metal contact 99 Optical element 121770.doc -77- 200807769 120 Base 130 Vertex 132 Vertex 135 Dashed line 140 Convergence side 140a first convergence side ^ 140b second convergence side 142 diverging side 150 gap 160a-160b ray 200 convergence optical element 202 convergence optical element 204 optical element 206 optical element 210 line 220 substrate 222 hexagonal substrate 224 substrate 230 apex 230a Vertex 230b Blunt Vertex 230c Vertex 230d Vertex 230e Vertex 121770.doc -78- 200807769 230f Vertex 230g Vertex 230h Pure Vertex 230i Vertex 232 Blunt Vertex 234 Vertex 240 Side 242 Side 244 Convergence Side 325 Base 330 Vertex 331 Pure Vertex 332 Vertex 333 Blunt Vertex 340 side 341 side 342 side 344 convergence side 345 side 347 side · 347a-347c flat portion 350 base 352 base 410a-410e light emitting diode assembly 121770.doc • 79- 200807769 412a-412e emission surface 420a-420e optical element 422a- 422e substrate 430a-430e apex 440a-440e side 441a-441d portion 442a-442d portion 550a circular substrate 550b hexagonal substrate 550c rectangular substrate 550d square substrate 570a square emission surface 570b square emission surface 570c square emission surface 570d hexagonal emission Surface 612 array 614a-14c light emitting diode assembly 616 edge 624 convergence optical element 646 convergence side 660 thin optical conduction layer 121770.doc -80-

Claims (1)

200807769 X. Patent Application Scope 1 · A light source comprising: a light emitting diode (LED) assembly having an emitting surface and comprising a light emitting diode and a re-emitting semiconductor structure, the light emitting diode Capable of emitting light at a first wavelength, and the re-emitting semiconductor construction includes a second potential well not positioned within a pn junction; and an optical component having an input surface and an output surface, the input surface Is in optical contact with at least a portion of the emitting surface. 2. The source of claim 1, wherein the second potential well system or comprises a quantum well 0 3 such as a request item! The light source, wherein the light emitting diode comprises a first potential well positioned within a junction. 4. The light source of the request, wherein the emitting surface is a light emitting diode = surface - and wherein the optical element is disposed between the light emitting diode die and the re-emitting semiconductor structure. 5. The light source of claim 4, wherein the re-smoke, upper, #A, and -8T4冉^+conductor structures are bonded to the output surface of the element. 6·#################################################################################################### Especially between the polar body and the optical element. 7. The light source of claim 6, wherein the semiconductor structure of the junction is attached to the light emitting diode by °. 8) The request source 6 | the source of the Bay 6, wherein the re-emitting diode is a semiconductor structure and the body has a single structure 121770 formed on the same half-wa .doc 200807769 made. 9. 10 11. 12 13 14. 15. A light source as claimed in Fig. 4, wherein the optical element comprises a package. The light source of claim 1, wherein the optical component comprises a picker. The light source of claim 1, wherein the optical component comprises a lens. The light source of claim 1, further comprising a patterned low refractive index layer in optical contact with a fourth of the emitting surface, the patterned layer having a first index of refraction, and wherein the input surface of the optical component And being in optical contact with a second portion of one of the emission surfaces, the optical element having a second index of refraction that is the same as the first index of refraction. The light source of claim 1, further comprising: a member for totally internally reflecting at least some of the light generated by the light emitting diode, and the member, into the light emitting diode assembly, the reflective member A first portion of the emitting surface is in optical contact with the first portion of the emitting surface, and wherein the input surface of the optical element is in optical contact with a second portion of the emitting surface that is different from the first portion. The light source of claim 1, wherein the optical component comprises a first portion comprising the input surface and consisting of a first material, and wherein the optical component comprises a second portion, the basin one, the knife eight has ^ The output end is comprised of a second material, and wherein the one or the other has a refractive index greater than the refractive index of the second material. The light source of item y, wherein the optical element is a plurality of optical elements each of the optical elements has an input surface; the specialized optical element is sized and connected to the light emitting surface. They are separated from each other by a portion of the optical contact. 12I770.doc -2-200807769 1 6. The light source of claim 1, wherein the optical element comprises a base illusion, two convergence sides, and two diverging sides. The light source of claim 1, wherein the optical element is shaped to direct light emitted by the light emitting diode assembly to produce a side emission pattern. 18. The light source of claim 1, wherein the optical element comprises a substrate, ~λ], a vertex at the substrate, and a converging side extending between the substrate and the vertex. 19. The light source of claim 18, wherein the bottom surface is the input surface of the optical element, and the substrate is not larger than the light emitting diode on the large + μ 丄 丄 々 々 々 The emitting surface of the component. 20·- A kind of drawing display device, and the light source of claim 1 is included. 2 1 _ - A lighting device comprising a light source such as a moonsuit item 1. 121770.doc