JP2011505685A - 粒子ビーム補助による薄膜材料の改良 - Google Patents

粒子ビーム補助による薄膜材料の改良 Download PDF

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JP2011505685A
JP2011505685A JP2010533344A JP2010533344A JP2011505685A JP 2011505685 A JP2011505685 A JP 2011505685A JP 2010533344 A JP2010533344 A JP 2010533344A JP 2010533344 A JP2010533344 A JP 2010533344A JP 2011505685 A JP2011505685 A JP 2011505685A
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processing method
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particle beam
particles
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JP2011505685A5 (enExample
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ゲラルド イングランド ジョナサン
シンクレア フランク
ボン ウォング クー ジョン
ドライ ラジェッシュ
ゴデット ルドヴィック
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ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02689—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using particle beams
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C30B1/023—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing from solids with amorphous structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1221—The active layers comprising only Group IV materials comprising polycrystalline silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Thermal Sciences (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Photovoltaic Devices (AREA)
JP2010533344A 2007-11-13 2008-11-13 粒子ビーム補助による薄膜材料の改良 Pending JP2011505685A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US98766707P 2007-11-13 2007-11-13
US98765007P 2007-11-13 2007-11-13
US98762907P 2007-11-13 2007-11-13
US12/269,327 US20090124065A1 (en) 2007-11-13 2008-11-12 Particle beam assisted modification of thin film materials
PCT/US2008/083382 WO2009064867A2 (en) 2007-11-13 2008-11-13 Particle beam assisted modification of thin film materials

Publications (2)

Publication Number Publication Date
JP2011505685A true JP2011505685A (ja) 2011-02-24
JP2011505685A5 JP2011505685A5 (enExample) 2012-01-05

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Family Applications (3)

Application Number Title Priority Date Filing Date
JP2010533344A Pending JP2011505685A (ja) 2007-11-13 2008-11-13 粒子ビーム補助による薄膜材料の改良
JP2010533345A Withdrawn JP2011503882A (ja) 2007-11-13 2008-11-13 薄膜材料の粒子線アシスト修飾
JP2010533346A Withdrawn JP2011503883A (ja) 2007-11-13 2008-11-13 粒子ビーム補助による薄膜材料の改良

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JP2010533345A Withdrawn JP2011503882A (ja) 2007-11-13 2008-11-13 薄膜材料の粒子線アシスト修飾
JP2010533346A Withdrawn JP2011503883A (ja) 2007-11-13 2008-11-13 粒子ビーム補助による薄膜材料の改良

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US (3) US8003498B2 (enExample)
JP (3) JP2011505685A (enExample)
KR (3) KR20100106374A (enExample)
CN (3) CN101911255A (enExample)
TW (3) TW200941550A (enExample)
WO (3) WO2009064867A2 (enExample)

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US20100053817A1 (en) * 2008-09-04 2010-03-04 Robert Glenn Biskeborn Coated magnetic head and methods for fabrication thereof
WO2010121309A1 (en) * 2009-04-21 2010-10-28 Petar Branko Atanackovic Optoelectronic device with lateral pin or pin junction
FR2946335B1 (fr) * 2009-06-05 2011-09-02 Saint Gobain Procede de depot de couche mince et produit obtenu.
US8749053B2 (en) 2009-06-23 2014-06-10 Intevac, Inc. Plasma grid implant system for use in solar cell fabrications
US20110039034A1 (en) * 2009-08-11 2011-02-17 Helen Maynard Pulsed deposition and recrystallization and tandem solar cell design utilizing crystallized/amorphous material
TWI459444B (zh) * 2009-11-30 2014-11-01 Applied Materials Inc 在半導體應用上的結晶處理
WO2012157162A1 (ja) * 2011-05-13 2012-11-22 株式会社Sumco 半導体エピタキシャルウェーハの製造方法、半導体エピタキシャルウェーハ、および固体撮像素子の製造方法
KR20120131753A (ko) * 2011-05-26 2012-12-05 삼성디스플레이 주식회사 박막 트랜지스터, 박막 트랜지스터의 제조 방법 및 유기 발광 표시 장치
US8652974B2 (en) * 2011-06-22 2014-02-18 Ipg Photonics Corporation Method and system for pre-heating of semiconductor material for laser annealing and gas immersion laser doping
US9324598B2 (en) 2011-11-08 2016-04-26 Intevac, Inc. Substrate processing system and method
WO2014100506A1 (en) 2012-12-19 2014-06-26 Intevac, Inc. Grid for plasma ion implant
CN106898540B (zh) * 2015-12-17 2020-01-31 宸鸿光电科技股份有限公司 半导体制造方法
DE102017119571B4 (de) 2017-08-25 2024-03-14 Infineon Technologies Ag Ionenimplantationsverfahren und ionenimplantationsvorrichtung
JP6812962B2 (ja) * 2017-12-26 2021-01-13 株式会社Sumco エピタキシャルシリコンウェーハの製造方法
CN111668353B (zh) * 2020-06-19 2021-12-17 錼创显示科技股份有限公司 发光半导体结构及半导体基板
TWI728846B (zh) 2020-06-19 2021-05-21 錼創顯示科技股份有限公司 發光半導體結構及發光半導體基板
CN116368409A (zh) * 2020-10-30 2023-06-30 西默有限公司 用于深紫外光源的光学部件
CN117374146B (zh) * 2023-12-06 2024-11-12 山东大学 半导体探测器及其能量自刻度、状态监测方法

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JPS5758315A (en) * 1980-09-25 1982-04-08 Toshiba Corp Manufacture of semiconductor single crystal film
JPS57148341A (en) * 1981-03-09 1982-09-13 Nippon Telegr & Teleph Corp <Ntt> Crystal growth of amorphous layer or polycrystalline layer on single crystal layer
JPS6037719A (ja) * 1983-08-10 1985-02-27 Seiko Epson Corp 半導体装置の製造方法
JPS63253616A (ja) * 1987-04-10 1988-10-20 Sony Corp 半導体薄膜の形成方法
JPH0319321A (ja) * 1989-06-16 1991-01-28 Fujitsu Ltd 半導体結晶形成方法
JPH03155124A (ja) * 1989-11-14 1991-07-03 Nippon Sheet Glass Co Ltd 半導体膜の製造方法
JPH04294523A (ja) * 1991-03-22 1992-10-19 Toshiba Corp 半導体装置の製造方法
JPH04354865A (ja) * 1991-05-31 1992-12-09 Res Dev Corp Of Japan 超低速クラスターイオンビームによる表面処理方法
JPH0529215A (ja) * 1991-07-22 1993-02-05 Nippon Telegr & Teleph Corp <Ntt> ビームアニール方法
JPH06340500A (ja) * 1991-11-15 1994-12-13 Niyuuraru Syst:Kk 中性粒子のビーム照射による再結晶化方法
JPH09153458A (ja) * 1995-09-26 1997-06-10 Fujitsu Ltd 薄膜半導体装置およびその製造方法
JPH10256153A (ja) * 1997-03-17 1998-09-25 Nippon Telegr & Teleph Corp <Ntt> 非晶質Ｓｉ層の低温単結晶化法
JP2003511822A (ja) * 1999-10-05 2003-03-25 バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド イオン注入のための高伝搬で，低エネルギーのビームラインのアーキテクチャー
JP2002093705A (ja) * 2000-06-27 2002-03-29 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
WO2006060124A2 (en) * 2004-11-30 2006-06-08 Axcelis Technologies, Inc. Optimization of beam utilization
JP2006245326A (ja) * 2005-03-03 2006-09-14 Ａ．Ｓ．Ｋ．株式会社 単結晶シリコン薄膜トランジスタ
WO2007067552A2 (en) * 2005-12-07 2007-06-14 Varian Semiconductor Equipment Associates, Inc. Techniques for preventing parasitic beamlets from affecting ion implantation

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CN101911255A (zh) 2010-12-08
US20090124065A1 (en) 2009-05-14
TW200941549A (en) 2009-10-01
WO2009064872A2 (en) 2009-05-22
JP2011503883A (ja) 2011-01-27
TW200943432A (en) 2009-10-16
KR20100105595A (ko) 2010-09-29
KR20100106374A (ko) 2010-10-01
JP2011503882A (ja) 2011-01-27
CN101897006A (zh) 2010-11-24
US20090124064A1 (en) 2009-05-14
TW200941550A (en) 2009-10-01
US8003498B2 (en) 2011-08-23
US20090124066A1 (en) 2009-05-14
WO2009064872A3 (en) 2009-07-02
WO2009064875A1 (en) 2009-05-22
WO2009064867A2 (en) 2009-05-22
CN101911250A (zh) 2010-12-08
WO2009064867A3 (en) 2009-07-02
KR20100086042A (ko) 2010-07-29

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