TW200941550A - Particle beam assisted modification of thin film materials - Google Patents
Particle beam assisted modification of thin film materials Download PDFInfo
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- TW200941550A TW200941550A TW097143919A TW97143919A TW200941550A TW 200941550 A TW200941550 A TW 200941550A TW 097143919 A TW097143919 A TW 097143919A TW 97143919 A TW97143919 A TW 97143919A TW 200941550 A TW200941550 A TW 200941550A
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- particle beam
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02689—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using particle beams
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B1/00—Single-crystal growth directly from the solid state
- C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
- C30B1/023—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing from solids with amorphous structure
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
- H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
- H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
- H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
- H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
- H10F71/1221—The active layers comprising only Group IV materials comprising polycrystalline silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- High Energy & Nuclear Physics (AREA)
- Thermal Sciences (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US98766707P | 2007-11-13 | 2007-11-13 | |
| US98765007P | 2007-11-13 | 2007-11-13 | |
| US98762907P | 2007-11-13 | 2007-11-13 | |
| US12/269,327 US20090124065A1 (en) | 2007-11-13 | 2008-11-12 | Particle beam assisted modification of thin film materials |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200941550A true TW200941550A (en) | 2009-10-01 |
Family
ID=40624096
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097143919A TW200941550A (en) | 2007-11-13 | 2008-11-13 | Particle beam assisted modification of thin film materials |
| TW097143914A TW200943432A (en) | 2007-11-13 | 2008-11-13 | Particle beam assisted modification of thin film materials |
| TW097143912A TW200941549A (en) | 2007-11-13 | 2008-11-13 | Particle beam assisted modification of thin film materials |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097143914A TW200943432A (en) | 2007-11-13 | 2008-11-13 | Particle beam assisted modification of thin film materials |
| TW097143912A TW200941549A (en) | 2007-11-13 | 2008-11-13 | Particle beam assisted modification of thin film materials |
Country Status (6)
| Country | Link |
|---|---|
| US (3) | US8003498B2 (enExample) |
| JP (3) | JP2011505685A (enExample) |
| KR (3) | KR20100106374A (enExample) |
| CN (3) | CN101911255A (enExample) |
| TW (3) | TW200941550A (enExample) |
| WO (3) | WO2009064867A2 (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011524640A (ja) * | 2008-06-11 | 2011-09-01 | インテバック・インコーポレイテッド | 太陽電池形成方法及び太陽電池 |
| US20100053817A1 (en) * | 2008-09-04 | 2010-03-04 | Robert Glenn Biskeborn | Coated magnetic head and methods for fabrication thereof |
| WO2010121309A1 (en) * | 2009-04-21 | 2010-10-28 | Petar Branko Atanackovic | Optoelectronic device with lateral pin or pin junction |
| FR2946335B1 (fr) * | 2009-06-05 | 2011-09-02 | Saint Gobain | Procede de depot de couche mince et produit obtenu. |
| US8749053B2 (en) | 2009-06-23 | 2014-06-10 | Intevac, Inc. | Plasma grid implant system for use in solar cell fabrications |
| US20110039034A1 (en) * | 2009-08-11 | 2011-02-17 | Helen Maynard | Pulsed deposition and recrystallization and tandem solar cell design utilizing crystallized/amorphous material |
| TWI459444B (zh) * | 2009-11-30 | 2014-11-01 | Applied Materials Inc | 在半導體應用上的結晶處理 |
| WO2012157162A1 (ja) * | 2011-05-13 | 2012-11-22 | 株式会社Sumco | 半導体エピタキシャルウェーハの製造方法、半導体エピタキシャルウェーハ、および固体撮像素子の製造方法 |
| KR20120131753A (ko) * | 2011-05-26 | 2012-12-05 | 삼성디스플레이 주식회사 | 박막 트랜지스터, 박막 트랜지스터의 제조 방법 및 유기 발광 표시 장치 |
| US8652974B2 (en) * | 2011-06-22 | 2014-02-18 | Ipg Photonics Corporation | Method and system for pre-heating of semiconductor material for laser annealing and gas immersion laser doping |
| US9324598B2 (en) | 2011-11-08 | 2016-04-26 | Intevac, Inc. | Substrate processing system and method |
| WO2014100506A1 (en) | 2012-12-19 | 2014-06-26 | Intevac, Inc. | Grid for plasma ion implant |
| CN106898540B (zh) * | 2015-12-17 | 2020-01-31 | 宸鸿光电科技股份有限公司 | 半导体制造方法 |
| DE102017119571B4 (de) | 2017-08-25 | 2024-03-14 | Infineon Technologies Ag | Ionenimplantationsverfahren und ionenimplantationsvorrichtung |
| JP6812962B2 (ja) * | 2017-12-26 | 2021-01-13 | 株式会社Sumco | エピタキシャルシリコンウェーハの製造方法 |
| CN111668353B (zh) * | 2020-06-19 | 2021-12-17 | 錼创显示科技股份有限公司 | 发光半导体结构及半导体基板 |
| TWI728846B (zh) | 2020-06-19 | 2021-05-21 | 錼創顯示科技股份有限公司 | 發光半導體結構及發光半導體基板 |
| CN116368409A (zh) * | 2020-10-30 | 2023-06-30 | 西默有限公司 | 用于深紫外光源的光学部件 |
| CN117374146B (zh) * | 2023-12-06 | 2024-11-12 | 山东大学 | 半导体探测器及其能量自刻度、状态监测方法 |
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-
2008
- 2008-11-12 US US12/269,344 patent/US8003498B2/en not_active Expired - Fee Related
- 2008-11-12 US US12/269,276 patent/US20090124064A1/en not_active Abandoned
- 2008-11-12 US US12/269,327 patent/US20090124065A1/en not_active Abandoned
- 2008-11-13 WO PCT/US2008/083382 patent/WO2009064867A2/en not_active Ceased
- 2008-11-13 KR KR1020107012811A patent/KR20100106374A/ko not_active Withdrawn
- 2008-11-13 CN CN2008801245314A patent/CN101911255A/zh active Pending
- 2008-11-13 KR KR1020107012827A patent/KR20100086042A/ko not_active Withdrawn
- 2008-11-13 TW TW097143919A patent/TW200941550A/zh unknown
- 2008-11-13 WO PCT/US2008/083391 patent/WO2009064875A1/en not_active Ceased
- 2008-11-13 KR KR1020107012810A patent/KR20100105595A/ko not_active Withdrawn
- 2008-11-13 WO PCT/US2008/083388 patent/WO2009064872A2/en not_active Ceased
- 2008-11-13 TW TW097143914A patent/TW200943432A/zh unknown
- 2008-11-13 CN CN2008801244595A patent/CN101911250A/zh active Pending
- 2008-11-13 JP JP2010533344A patent/JP2011505685A/ja active Pending
- 2008-11-13 JP JP2010533345A patent/JP2011503882A/ja not_active Withdrawn
- 2008-11-13 TW TW097143912A patent/TW200941549A/zh unknown
- 2008-11-13 CN CN2008801202022A patent/CN101897006A/zh active Pending
- 2008-11-13 JP JP2010533346A patent/JP2011503883A/ja not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| CN101911255A (zh) | 2010-12-08 |
| US20090124065A1 (en) | 2009-05-14 |
| TW200941549A (en) | 2009-10-01 |
| WO2009064872A2 (en) | 2009-05-22 |
| JP2011505685A (ja) | 2011-02-24 |
| JP2011503883A (ja) | 2011-01-27 |
| TW200943432A (en) | 2009-10-16 |
| KR20100105595A (ko) | 2010-09-29 |
| KR20100106374A (ko) | 2010-10-01 |
| JP2011503882A (ja) | 2011-01-27 |
| CN101897006A (zh) | 2010-11-24 |
| US20090124064A1 (en) | 2009-05-14 |
| US8003498B2 (en) | 2011-08-23 |
| US20090124066A1 (en) | 2009-05-14 |
| WO2009064872A3 (en) | 2009-07-02 |
| WO2009064875A1 (en) | 2009-05-22 |
| WO2009064867A2 (en) | 2009-05-22 |
| CN101911250A (zh) | 2010-12-08 |
| WO2009064867A3 (en) | 2009-07-02 |
| KR20100086042A (ko) | 2010-07-29 |
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