JP2011505685A - 粒子ビーム補助による薄膜材料の改良 - Google Patents

粒子ビーム補助による薄膜材料の改良 Download PDF

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JP2011505685A
JP2011505685A JP2010533344A JP2010533344A JP2011505685A JP 2011505685 A JP2011505685 A JP 2011505685A JP 2010533344 A JP2010533344 A JP 2010533344A JP 2010533344 A JP2010533344 A JP 2010533344A JP 2011505685 A JP2011505685 A JP 2011505685A
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particle beam
particles
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JP2011505685A5 (cg-RX-API-DMAC10.html
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ゲラルド イングランド ジョナサン
シンクレア フランク
ボン ウォング クー ジョン
ドライ ラジェッシュ
ゴデット ルドヴィック
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ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3818—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using particle beams
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C30B1/023—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing from solids with amorphous structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1221—The active layers comprising only Group IV materials comprising polycrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2922—Materials being non-crystalline insulating materials, e.g. glass or polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Photovoltaic Devices (AREA)
JP2010533344A 2007-11-13 2008-11-13 粒子ビーム補助による薄膜材料の改良 Pending JP2011505685A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US98766707P 2007-11-13 2007-11-13
US98765007P 2007-11-13 2007-11-13
US98762907P 2007-11-13 2007-11-13
US12/269,327 US20090124065A1 (en) 2007-11-13 2008-11-12 Particle beam assisted modification of thin film materials
PCT/US2008/083382 WO2009064867A2 (en) 2007-11-13 2008-11-13 Particle beam assisted modification of thin film materials

Publications (2)

Publication Number Publication Date
JP2011505685A true JP2011505685A (ja) 2011-02-24
JP2011505685A5 JP2011505685A5 (cg-RX-API-DMAC10.html) 2012-01-05

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JP2010533344A Pending JP2011505685A (ja) 2007-11-13 2008-11-13 粒子ビーム補助による薄膜材料の改良
JP2010533346A Withdrawn JP2011503883A (ja) 2007-11-13 2008-11-13 粒子ビーム補助による薄膜材料の改良
JP2010533345A Withdrawn JP2011503882A (ja) 2007-11-13 2008-11-13 薄膜材料の粒子線アシスト修飾

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JP2010533346A Withdrawn JP2011503883A (ja) 2007-11-13 2008-11-13 粒子ビーム補助による薄膜材料の改良
JP2010533345A Withdrawn JP2011503882A (ja) 2007-11-13 2008-11-13 薄膜材料の粒子線アシスト修飾

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US (3) US8003498B2 (cg-RX-API-DMAC10.html)
JP (3) JP2011505685A (cg-RX-API-DMAC10.html)
KR (3) KR20100105595A (cg-RX-API-DMAC10.html)
CN (3) CN101911255A (cg-RX-API-DMAC10.html)
TW (3) TW200941549A (cg-RX-API-DMAC10.html)
WO (3) WO2009064872A2 (cg-RX-API-DMAC10.html)

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US20110039034A1 (en) * 2009-08-11 2011-02-17 Helen Maynard Pulsed deposition and recrystallization and tandem solar cell design utilizing crystallized/amorphous material
TWI528418B (zh) * 2009-11-30 2016-04-01 應用材料股份有限公司 在半導體應用上的結晶處理
KR101991882B1 (ko) * 2011-05-13 2019-06-21 가부시키가이샤 사무코 반도체 에피택셜 웨이퍼의 제조 방법, 반도체 에피택셜 웨이퍼, 및 고체 촬상 소자의 제조 방법
KR20120131753A (ko) * 2011-05-26 2012-12-05 삼성디스플레이 주식회사 박막 트랜지스터, 박막 트랜지스터의 제조 방법 및 유기 발광 표시 장치
US8652974B2 (en) * 2011-06-22 2014-02-18 Ipg Photonics Corporation Method and system for pre-heating of semiconductor material for laser annealing and gas immersion laser doping
KR20140110851A (ko) 2011-11-08 2014-09-17 인테벡, 인코포레이티드 기판 프로세싱 시스템 및 방법
TWI570745B (zh) 2012-12-19 2017-02-11 因特瓦克公司 用於電漿離子植入之柵極
CN106898540B (zh) * 2015-12-17 2020-01-31 宸鸿光电科技股份有限公司 半导体制造方法
DE102017119571B4 (de) * 2017-08-25 2024-03-14 Infineon Technologies Ag Ionenimplantationsverfahren und ionenimplantationsvorrichtung
JP6812962B2 (ja) * 2017-12-26 2021-01-13 株式会社Sumco エピタキシャルシリコンウェーハの製造方法
TWI728846B (zh) 2020-06-19 2021-05-21 錼創顯示科技股份有限公司 發光半導體結構及發光半導體基板
CN111668353B (zh) * 2020-06-19 2021-12-17 錼创显示科技股份有限公司 发光半导体结构及半导体基板
CN116368409B (zh) * 2020-10-30 2026-03-31 西默有限公司 用于深紫外光源的光学部件
CN117374146B (zh) * 2023-12-06 2024-11-12 山东大学 半导体探测器及其能量自刻度、状态监测方法

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JPS5758315A (en) * 1980-09-25 1982-04-08 Toshiba Corp Manufacture of semiconductor single crystal film
JPS57148341A (en) * 1981-03-09 1982-09-13 Nippon Telegr & Teleph Corp <Ntt> Crystal growth of amorphous layer or polycrystalline layer on single crystal layer
JPS6037719A (ja) * 1983-08-10 1985-02-27 Seiko Epson Corp 半導体装置の製造方法
JPS63253616A (ja) * 1987-04-10 1988-10-20 Sony Corp 半導体薄膜の形成方法
JPH0319321A (ja) * 1989-06-16 1991-01-28 Fujitsu Ltd 半導体結晶形成方法
JPH03155124A (ja) * 1989-11-14 1991-07-03 Nippon Sheet Glass Co Ltd 半導体膜の製造方法
JPH04294523A (ja) * 1991-03-22 1992-10-19 Toshiba Corp 半導体装置の製造方法
JPH04354865A (ja) * 1991-05-31 1992-12-09 Res Dev Corp Of Japan 超低速クラスターイオンビームによる表面処理方法
JPH0529215A (ja) * 1991-07-22 1993-02-05 Nippon Telegr & Teleph Corp <Ntt> ビームアニール方法
JPH06340500A (ja) * 1991-11-15 1994-12-13 Niyuuraru Syst:Kk 中性粒子のビーム照射による再結晶化方法
JPH09153458A (ja) * 1995-09-26 1997-06-10 Fujitsu Ltd 薄膜半導体装置およびその製造方法
JPH10256153A (ja) * 1997-03-17 1998-09-25 Nippon Telegr & Teleph Corp <Ntt> 非晶質Ｓｉ層の低温単結晶化法
JP2003511822A (ja) * 1999-10-05 2003-03-25 バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド イオン注入のための高伝搬で，低エネルギーのビームラインのアーキテクチャー
JP2002093705A (ja) * 2000-06-27 2002-03-29 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
WO2006060124A2 (en) * 2004-11-30 2006-06-08 Axcelis Technologies, Inc. Optimization of beam utilization
JP2006245326A (ja) * 2005-03-03 2006-09-14 Ａ．Ｓ．Ｋ．株式会社 単結晶シリコン薄膜トランジスタ
WO2007067552A2 (en) * 2005-12-07 2007-06-14 Varian Semiconductor Equipment Associates, Inc. Techniques for preventing parasitic beamlets from affecting ion implantation

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US20090124066A1 (en) 2009-05-14
WO2009064867A2 (en) 2009-05-22
WO2009064872A2 (en) 2009-05-22
TW200941550A (en) 2009-10-01
US20090124065A1 (en) 2009-05-14
US8003498B2 (en) 2011-08-23
TW200943432A (en) 2009-10-16
TW200941549A (en) 2009-10-01
KR20100086042A (ko) 2010-07-29
JP2011503882A (ja) 2011-01-27
CN101911250A (zh) 2010-12-08
CN101897006A (zh) 2010-11-24
US20090124064A1 (en) 2009-05-14
WO2009064867A3 (en) 2009-07-02
WO2009064872A3 (en) 2009-07-02
KR20100106374A (ko) 2010-10-01
WO2009064875A1 (en) 2009-05-22
KR20100105595A (ko) 2010-09-29
CN101911255A (zh) 2010-12-08
JP2011503883A (ja) 2011-01-27

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