JP2011249821A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2011249821A5 JP2011249821A5 JP2011153413A JP2011153413A JP2011249821A5 JP 2011249821 A5 JP2011249821 A5 JP 2011249821A5 JP 2011153413 A JP2011153413 A JP 2011153413A JP 2011153413 A JP2011153413 A JP 2011153413A JP 2011249821 A5 JP2011249821 A5 JP 2011249821A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- electrode
- drain electrode
- source electrode
- electron supply
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims 15
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 2
- 239000012535 impurity Substances 0.000 claims 2
- 238000002955 isolation Methods 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 229910052796 boron Inorganic materials 0.000 claims 1
- 238000004891 communication Methods 0.000 claims 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical group [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 claims 1
- 238000010295 mobile communication Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011153413A JP2011249821A (ja) | 2011-07-12 | 2011-07-12 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011153413A JP2011249821A (ja) | 2011-07-12 | 2011-07-12 | 半導体装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003397982A Division JP2005159157A (ja) | 2003-11-27 | 2003-11-27 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2011249821A JP2011249821A (ja) | 2011-12-08 |
| JP2011249821A5 true JP2011249821A5 (https=) | 2012-03-15 |
Family
ID=45414608
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011153413A Pending JP2011249821A (ja) | 2011-07-12 | 2011-07-12 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2011249821A (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6090764B2 (ja) * | 2012-05-24 | 2017-03-08 | ローム株式会社 | 窒化物半導体装置およびその製造方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5631751B2 (https=) * | 1973-08-28 | 1981-07-23 | ||
| JPH0680793B2 (ja) * | 1985-06-28 | 1994-10-12 | 日本電気株式会社 | 3次元集積回路 |
| JPS6367802A (ja) * | 1986-09-09 | 1988-03-26 | Nec Corp | スイツチ回路 |
| JPH08172163A (ja) * | 1994-12-19 | 1996-07-02 | Matsushita Electric Ind Co Ltd | 1入力多出力スイッチおよび多入力1出力スイッチ |
| JPH11330096A (ja) * | 1998-05-19 | 1999-11-30 | Hitachi Ltd | 半導体装置及びその製造方法並びに通信機 |
| JP2000332234A (ja) * | 1999-05-19 | 2000-11-30 | Sanken Electric Co Ltd | 半導体装置 |
| JP2002208874A (ja) * | 2001-01-11 | 2002-07-26 | Matsushita Electric Ind Co Ltd | 高周波回路 |
-
2011
- 2011-07-12 JP JP2011153413A patent/JP2011249821A/ja active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2014116401A5 (https=) | ||
| US20130153999A1 (en) | Trench gate mosfet device | |
| WO2008105077A1 (ja) | 化合物半導体装置とその製造方法 | |
| JP2011054949A5 (ja) | 半導体装置 | |
| GB2496067A (en) | Power semiconductor device | |
| JP2019009308A5 (https=) | ||
| CN104409501B (zh) | 碳化硅金属氧化物半导体场效应晶体管 | |
| WO2012054686A3 (en) | Trench dmos device with improved termination structure for high voltage applications | |
| EP2263254A4 (en) | TWO GATE LATERALDIFFUSIONS MOS TRANSISTOR | |
| MY182669A (en) | Semiconductor device and method of manufacturing the same | |
| JP2015502050A5 (https=) | ||
| JP2015529006A5 (https=) | ||
| JP2013102140A5 (ja) | 半導体装置 | |
| JP2018504778A5 (https=) | ||
| JP2014033200A5 (https=) | ||
| WO2014140000A3 (en) | Lateral single-photon avalanche diode and their manufacturing method | |
| WO2011151681A3 (ja) | 半導体装置およびこれを用いた半導体リレー | |
| WO2012113818A3 (en) | A power semiconductor device | |
| JP2017139293A5 (https=) | ||
| JP2014096579A5 (https=) | ||
| JP2011009387A5 (ja) | 半導体装置 | |
| US9048313B2 (en) | Semiconductor device that can maintain high voltage while lowering on-state resistance | |
| JP2015012048A5 (https=) | ||
| JP2013008959A5 (ja) | 半導体装置 | |
| JP2011142190A5 (https=) |