JP2011249783A - 微結晶半導体膜の作製方法及び半導体装置の作製方法 - Google Patents
微結晶半導体膜の作製方法及び半導体装置の作製方法 Download PDFInfo
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- JP2011249783A JP2011249783A JP2011097784A JP2011097784A JP2011249783A JP 2011249783 A JP2011249783 A JP 2011249783A JP 2011097784 A JP2011097784 A JP 2011097784A JP 2011097784 A JP2011097784 A JP 2011097784A JP 2011249783 A JP2011249783 A JP 2011249783A
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Classifications
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23C16/45574—Nozzles for more than one gas
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/515—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using pulsed discharges
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
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- H01L21/0245—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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Abstract
【解決手段】微結晶半導体膜の作製に際して、連続放電によりプラズマを発生させて複数の結晶核を生成させる第1の工程と、パルス放電によりプラズマを発生させて前記複数の結晶核の間隙を埋める第2の工程と、を行い、前記第2の工程は前記第1の工程の後に行う。前記第1の工程と前記第2の工程は更に複数回繰り返してもよい。
【選択図】図1
Description
本実施の形態は、本発明の一態様である半導体膜の作製方法について図1乃至図7を参照して説明する。
本実施の形態では、本発明の一態様である半導体装置の作製方法について説明する。本実施の形態にて作製する半導体装置には、実施の形態1にて説明した微結晶半導体膜の作製方法を適用する。なお、本実施の形態にて説明する半導体装置としては、薄膜トランジスタを例示する。
実施の形態1及び実施の形態2にて説明した薄膜トランジスタ及び表示装置は、さまざまな電子機器(遊技機も含む)に適用することができる。電子機器としては、例えば、テレビジョン装置(テレビ、またはテレビジョン受信機ともいう)、コンピュータ用のモニタ、電子ペーパー、デジタルカメラ、デジタルビデオカメラ、デジタルフォトフレーム、携帯電話機(携帯電話、携帯電話装置ともいう)、携帯型ゲーム機、携帯情報端末、音響再生装置、パチンコ機などの大型ゲーム機などが挙げられる。
102 第1の半導体膜
104 第2の半導体膜
106 第3の半導体膜
108 第4の半導体膜
150 反応室
151 第1の電極
152 第2の電極
153 高周波電力供給手段
154 高周波電源
156 整合器
157 ベローズ
158 ガス供給手段
159 排気手段
160 複数のシリンダ
160a シリンダ
160b シリンダ
160c シリンダ
161 複数の圧力調整弁
162 複数のストップバルブ
163 複数のマスフローコントローラ
164 基板加熱ヒータ
165 ヒータコントローラ
166 絶縁材
167 バタフライバルブ
168 バタフライバルブ
169 ストップバルブ
170 ストップバルブ
171 ストップバルブ
172 ストップバルブ
173 ストップバルブ
174 ストップバルブ
175 ターボ分子ポンプ
176 ターボ分子ポンプ
177 ドライポンプ
179 高周波カットフィルタ
181 凸部
182 中空部
183 凹部
184 中空部
185 ガスライン
186 ガスライン
191 拡散板
192 拡散板
193 貫通孔
194 貫通孔
200 基板
202 ゲート電極層
204 ゲート絶縁層
206 第1の半導体層
206A 第1の半導体膜
208 第2の半導体層
208A 第2の半導体膜
208B 第2の半導体層
210 ソース領域及びドレイン領域
210A 不純物半導体膜
210B 不純物半導体層
212 ソース電極及びドレイン電極層
212A 導電膜
214 絶縁層
216 開口部
218 画素電極層
220 レジストマスク
222 積層体
224 レジストマスク
250a 第1の反応室
250b 第2の反応室
250c 第3の反応室
250d 第4の反応室
254 高周波電源
256 整合器
258 ガス供給手段
259 排気手段
260 シリンダ
261 圧力調整弁
262 ストップバルブ
263 マスフローコントローラ
270 共通室
271 ロード/アンロード室
273 ゲートバルブ
274 搬送機構
275 クライオポンプ
300 基板
302 ゲート電極層
304 ゲート絶縁層
306 第1の半導体層
306A 第1の半導体膜
308 第2の半導体層
308A 第2の半導体膜
308B 第2の半導体層
310 ソース領域及びドレイン領域
310A 不純物半導体膜
310B 不純物半導体層
312 ソース電極及びドレイン電極層
312A 導電膜
312B 導電層
314 絶縁層
318 画素電極層
320 レジストマスク
324 レジストマスク
400 筐体
401 筐体
402 表示部
403 表示部
404 蝶番
405 電源入力端子
406 操作キー
407 スピーカ
411 筐体
412 表示部
421 筐体
422 表示部
423 スタンド
431 筐体
432 表示部
433 操作ボタン
434 外部接続ポート
435 スピーカ
436 マイク
437 操作ボタン
Claims (4)
- 堆積性ガスを含む雰囲気中で連続放電を行うことによりプラズマを発生させて複数の結晶核を生成させる第1の工程と、
前記堆積性ガスを含む雰囲気中でパルス放電を行うことによりプラズマを発生させて前記複数の結晶核の間を埋める第2の工程と、を有し、
前記第2の工程は前記第1の工程の後に行い、
前記第2の工程の後に、前記第1の工程を更に行い、その後前記第2の工程を更に行うことを特徴とする微結晶半導体膜の作製方法。 - 堆積性ガスを含む雰囲気中で連続放電を行うことによりプラズマを発生させて複数の結晶核を生成させる第1の工程と、
前記堆積性ガスを含む雰囲気中でパルス放電を行うことによりプラズマを発生させて前記複数の結晶核の間を埋める第2の工程と、を有し、
前記第2の工程は前記第1の工程の後に行い、
前記第2の工程の後に、前記第1の工程と前記第2の工程をこの順に更に複数回行うことを特徴とする微結晶半導体膜の作製方法。 - 請求項1または請求項2において、
前記堆積性ガスがシリコンまたはゲルマニウムを含むことを特徴とする微結晶半導体膜の作製方法。 - ゲート電極層を形成し、
前記ゲート電極層を覆ってゲート絶縁層を形成し、
前記ゲート絶縁層上に請求項1乃至請求項3のいずれか一に記載の微結晶半導体膜の作製方法により微結晶半導体膜を形成し、
該微結晶半導体膜上にソース及びドレインを形成することを特徴とする半導体装置の作製方法。
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JP2006100551A (ja) * | 2004-09-29 | 2006-04-13 | Mitsubishi Heavy Ind Ltd | プラズマ製膜方法、プラズマ処理装置、太陽電池及び太陽電池の製造方法 |
US20090047759A1 (en) * | 2007-08-17 | 2009-02-19 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
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JP2009130229A (ja) * | 2007-11-27 | 2009-06-11 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
US20100216285A1 (en) * | 2009-01-13 | 2010-08-26 | Semiconductor Energy Laboratory Co., Ltd. | Method for Manufacturing Crystalline Semiconductor Film and Method for Manufacturing Thin Film Transistor |
JP2010186988A (ja) * | 2009-01-13 | 2010-08-26 | Semiconductor Energy Lab Co Ltd | 結晶性半導体膜の作製方法及び薄膜トランジスタの作製方法 |
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TW201208072A (en) | 2012-02-16 |
TWI512981B (zh) | 2015-12-11 |
US20110263080A1 (en) | 2011-10-27 |
KR20110119549A (ko) | 2011-11-02 |
US8343857B2 (en) | 2013-01-01 |
JP5695961B2 (ja) | 2015-04-08 |
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