JP2011243270A - 光記録媒体 - Google Patents
光記録媒体 Download PDFInfo
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- JP2011243270A JP2011243270A JP2011022171A JP2011022171A JP2011243270A JP 2011243270 A JP2011243270 A JP 2011243270A JP 2011022171 A JP2011022171 A JP 2011022171A JP 2011022171 A JP2011022171 A JP 2011022171A JP 2011243270 A JP2011243270 A JP 2011243270A
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- 230000003287 optical effect Effects 0.000 title claims abstract description 111
- 239000000203 mixture Substances 0.000 claims abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 229910052738 indium Inorganic materials 0.000 claims abstract description 19
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 17
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 12
- 229910052718 tin Inorganic materials 0.000 claims abstract description 9
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 525
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- 238000002834 transmittance Methods 0.000 description 34
- 229910021078 Pd—O Inorganic materials 0.000 description 23
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- 229910020923 Sn-O Inorganic materials 0.000 description 20
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- 229910007746 Zr—O Inorganic materials 0.000 description 7
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 6
- 229910007541 Zn O Inorganic materials 0.000 description 6
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 4
- -1 SiN and AlN Chemical class 0.000 description 4
- 229910006404 SnO 2 Inorganic materials 0.000 description 4
- 229910007604 Zn—Sn—O Inorganic materials 0.000 description 4
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- 238000010586 diagram Methods 0.000 description 4
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- 229910018557 Si O Inorganic materials 0.000 description 2
- 229910003077 Ti−O Inorganic materials 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
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Abstract
【解決手段】基板21と、2層以上4層以下の記録層221,222を有し、これら記録層221,222のうち少なくとも1以上の記録層222は、PdOと、PdO2とを含むと共に、完全に酸化された、In、Zn、Al、Sn(すなわち、In2O3、ZnO、Al2O3、SnO2)のうち少なくとも1つを含む組成の特定記録層とする。そして、この特定記録層に隣接して、In及びAlの少なくともいずれかを主成分とするIn/Al酸化物層より成る誘電体層232a、232bを設ける。
【選択図】図2
Description
なお、説明は以下の順序で行う。
1.光記録媒体の構成(記録層を2層、3層及び4層構成とする例)
2.参考例(特定記録層のみの単層構成とした光記録媒体の記録特性)
3.実施例(記録層を2層、3層及び4層構成とする例の記録特性)
[光記録媒体の構造]
図1は、本発明の一実施の形態に係る光記録媒体10の概略断面構成図である。図1に示すように、この光記録媒体10は、基板11上に、2層の記録層121(L0)及び122(L1)が形成される。なお、多層記録媒体においては通常、基板に最も近い記録層をL0、次いでL1、L2、・・・とするので、便宜上併記して示す。
図2に示す例においては、記録層を3層構成とする光記録媒体20の構成を示す。この例では、基板21上に、図1に示す例と同様にウォブリンググルーブとしての凹凸が形成され、その凹凸形成面の上に、基板21側から順に記録層221(L0)、222(L1)及び223(L2)が、中間層241及び242を介して形成される。図示の例では、記録層221、222及び223の上下に隣接して誘電体層231a及び231b、232a及び232b、233a及び233bがそれぞれ設けられる。そして記録層221〜223のうち少なくともいずれか、好ましくは記録層222、223の少なくともいずれかは、上述の組成による特定記録層として構成する。また特定記録層の上下に隣接して設けられる誘電体層のうち少なくともいずれかは、In/Al酸化物層として構成する。記録層223(L2)の上には、保護層25が形成される。図1に示す例と同様に、大容量光ディスク型の構成とする場合は、基板21の外径や厚さ、保護層25の厚さを図1に示す例と同様とすることが好ましい。
基板11(21、31)は、例えばポリカーボネート等の樹脂等の材料より成り、射出成形等によって、マスタリング原盤からトラッキング用のウォブリンググルーブの凹凸形状が転写されて形成される。なお、本発明の光記録媒体においてグルーブ形状は必須ではなく、トラッキングが可能で、且つ記録トラック間クロストークが適切に抑制される構造であればよい。また、記録トラックは光入射側から見てグルーブ上又はランド上とすることができ、記録方式を問わない。
本例において少なくとも1以上の記録層、例えば記録層122、223、324等は、上述したように、PdOと、PdO2とを含むものとする。更に、完全に酸化された、In、Zn、Al、Snのうち少なくとも1つを含む組成の特定記録層として構成する。
特定記録層を含む各記録層121(122、221、・・・等)の成膜は蒸着法やスパッタ法等により行うことができる。例えば特定記録層をスパッタリング法により形成する場合、Pdターゲットと、その他にIn2O3、ZnO、Al2O3、SnOのいずれか1つ以上のターゲットを使用する。または、目的とする組成比の合金ターゲットを用いてもよい。そして、O2ガスに加え、ArガスやN2ガスを流しながら、スパッタ法により成膜する。
まず、特定記録層を含む多層光記録媒体の記録特性を検討する前に、特定記録層単独構成とした光記録媒体の記録特性について、参考例として検討した。
第1の参考例では、光記録媒体の基板として、外径120mm、厚さ1.1mmのディスク状のポリカーボネートより成る基板を用いた。この基板上に、In−Zn−Oより成る厚さ15nmの下層誘電体層、In−Zn−Sn−Al−Pd−Oより成る厚さ40nmの特定記録層、In−Zn−Oより成る厚さ15nmの上層誘電体層を形成した。更にこの上に、記録用光入射側最表面のいわゆるカバー層として、紫外線硬化性樹脂より成る厚さ100μmの保護層を形成した。
また、主に、記録層の組成により、透過率をコントロールすることができる。例えば、Alの添加量を上げるほど透過率は少しずつ高くすることができる。Znは添加量を上げるほど、逆に透過率が少しずつ低くなる。一方、Pdは添加量を上げると透過率は大きく減少し、添加量を下げれば透過率は大きく増大する。
その他、組成や厚さを変えることで、他の記録層に用いることが可能である。
また、スパッタ成膜時のガスの流量は、誘電体層の成膜時はAr:50sccm、O2:5sccm、特定記録層の成膜時はAr:30sccm、O2:30sccmとした。
このようにして、第2の参考例の光記録媒体を作製した。
図5に、第2の参考例及び比較例の光記録媒体のi−MLSE(次世代光ディスク用評価基準)の記録特性を示す。図5中○印は第2の参考例の結果を示し、●印は比較例の結果を示す。
従って、特定記録層をZnWPdOとした場合も、Inを含む誘電体層を設けることにより、非常に良好な特性が得られ、i−MLSE値も記録パワーマージンも非常に良好な結果が得られている。
また、スパッタ成膜時のガスの流量は、誘電体層の成膜時はAr:50sccm、O2:5sccm、特定記録層の成膜時はAr:30sccm、O2:30sccmとした。
図6より、エラーレートが充分低く、パワーマージンも非常に良好な結果が得られた。
したがって、特定記録層に隣接してIn−Sn−O誘電体層を設けていることにより、特定記録層にInを含んでいなくても、良好な記録特性が得られることがわかる。
次に、上述した特定記録層を含む2層〜4層の光記録媒体を作製し、その記録特性をそれぞれ検討した。各例共に、光記録媒体の基板としては、外径120mm、厚さ1.1mmのディスク状のポリカーボネートより成る基板を用いた。中間層としてはアクリル系の紫外線硬化性樹脂を用い、また記録用光入射側の最表面の保護層、いわゆるカバー層として、アクリル系の紫外線硬化性樹脂を用いた。第1の記録層から保護層までの全厚さを100μmとなるように構成し、全体として1.2mmの厚さとなるようにした。またこれら中間層及び保護層は、スピンコート法により成膜した後紫外線を照射して硬化することにより形成した。以下各実施例について詳細に説明する。
上述した構成の基板11上に、下記の第1の記録層121(L0)、中間層14、第2の記録層122(L1)、保護層15を形成した。各記録層121及び122の上下に隣接して、In/Al酸化物として、この場合はInを主成分とする酸化物より成る下層の誘電体層131a、132a及び上層の誘電体層131b、132bを設ける構成とした。各層の材料及び厚さは下記の通りである。
(第2の記録層L1):下層誘電体層In−Zn−Sn−O(厚さ10nm)/記録層In−Zn−Sn−Pd−O(厚さ40nm)/上層誘電体層In−Zn−Sn−O(厚さ15nm)
(L0上下誘電体層)In:Zn:Sn=70:20:10
(L0記録層)In:Zn:Sn:Pd=25:35:5:35
(L1上下誘電体層)In:Zn:Sn=70:20:10
(L1記録層)In:Zn:Sn:Pd=35:35:10:20
上述した構成の基板21上に、下記の第1の記録層221(L0)、中間層241、第2の記録層222(L1)、中間層242、第3の記録層223(L2)、保護層25を形成した。この例では、各記録層221〜223を全て特定記録層とし、その上下の誘電体層231a、231b、・・・233a、233bを全て、In/Al酸化物、この場合Inを主成分とする酸化物より成る誘電体により構成した。各層の材料及び厚さは下記の通りである。
(第2の記録層L1):下層誘電体層In−Zn−Ga−O(厚さ10nm)/記録層In−Zn−Sn−Al−Pd−O(厚さ40nm)/上層誘電体層In−Zn−Ga−O(厚さ25nm)
(第3の記録層L2):下層誘電体層In−Si−Zr−O(厚さ10nm)/記録層In−Zn−Sn−Al−Pd−O(厚さ40nm)/上層誘電体層In−Si−Zr−O(厚さ30nm)
(L0上下誘電体層)In:Sn=90:10
(L0記録層)In:Zn:Sn:Al:Pd=48:16:4:12:20
(L1上下誘電体層)In:Zn:Ga=86:7:7
(L1記録層)In:Zn:Sn:Al:Pd=55:15:5:13:12
(L2上下誘電体層)In:Si:Zr=50:20:30
(L2記録層)In:Zn:Sn:Al:Pd=55:15:5:15:10
上述した構成の基板31上に、下記の第1の記録層321(L0)、中間層341、第2の記録層322(L1)、中間層342、第3の記録層323(L2)を形成した。更にその上に、中間層343、第4の記録層324(L3)、保護層35を形成した。この例では、各記録層321〜324を全て特定記録層とした。またその上下の誘電体層331a、331b、・・・、334a、334bを全て、In/Al酸化物、この場合Inを主成分とする酸化物より成る誘電体により構成した。各層の材料及び厚さは下記の通りである。
(第2の記録層L1):下層誘電体層In−Zn−O(厚さ10nm)/記録層In−Zn−Sn−Al−Pd−O膜(厚さ40nm)/上層誘電体層In−Zn−O(厚さ15nm)
(第3の記録層L2):下層誘電体層In−Zn−Ga−O(厚さ10nm)/記録層In−Zn−Sn−Al−Pd−O膜(厚さ40nm)/上層誘電体層In−Zn−Ga−O(厚さ25nm)
(第4の記録層L3):下層誘電体層In−Zn−Al−O(厚さ10nm)/記録層In−Zn−Sn−Al−Pd−O膜(厚さ40nm)/上層誘電体層In−Zn−Al−O(厚さ30nm)
(L0上下誘電体層)In:Zn:Sn=70:20:10
(L0記録層)In:Zn:Sn:Pd=25:35:5:35
(L1上下誘電体層)In:Zn=80:20
(L1記録層)In:Zn:Sn:Al:Pd=48:16:4:12:20
(L2上下誘電体層)In:Zn:Ga=86:7:7
(L2記録層)In:Zn:Sn:Al:Pd=55:15:5:13:12
(L3上下誘電体層)In:Zn:Al=50:10:40
(L3記録層)In:Zn:Sn:Al:Pd=55:15:5:15:10
実施例3において、第1の記録層321のみを特定記録層とせず、別の材料を用いて光記録媒体を構成し、その記録特性を測定した。この例における第1の記録層321の材料及び厚さは下記の通りである。なお、基板31と第1の記録層321との間にAgより成る厚さ100nmの反射層を形成した。
(In−Sn−O層)In:Sn=90:10
(ZnS−SiO2層)ZnS:SiO2=80:20
(Sb−ZnS−SiO2層)Sb:ZnS−SiO2=4:6
(ただしZnS−SiO2についてはZnS:SiO2=80:20)
特に、3層構成とする実施例2において、一層当たりの記録容量を33.4GB、4層構成とする実施例3及び4において一層当たりの記録容量を32GBとする場合においても、非常に良好な記録特性が得られることが分かった。
上述した構成の基板31上に、下記の第1の記録層321(L0)、中間層341、第2の記録層322(L1)、中間層342、第3の記録層323(L2)を形成した。更にその上に、中間層343、第4の記録層324(L3)、保護層35を形成した。この例では、各記録層321〜324を全て特定記録層とした。またその上下の誘電体層331a、331b、・・・、334a、334bを全て、In/Al酸化物、この場合Inを主成分とする酸化物より成る誘電体により構成した。各層の材料及び厚さは下記の通りである。
(第2の記録層L1):下層誘電体層In−Sn−O(厚さ10nm)/記録層Zn−W−Pd−O膜(厚さ30nm)/上層誘電体層In−Sn−O(厚さ15nm)
(第3の記録層L2):下層誘電体層In−Sn−O(厚さ10nm)/記録層Zn−W−Pd−O膜(厚さ30nm)/上層誘電体層In−Sn−O(厚さ22nm)
(第4の記録層L3):下層誘電体層In−Si−Zr−O(厚さ10nm)/記録層Zn−W−Pd−O膜(厚さ30nm)/上層誘電体層In−Si−Zr−O(厚さ30nm)
(L0上下誘電体層)In:Sn=9:1
(L0記録層)Zn:Pd=60:40
(L1上下誘電体層)In:Sn=9:1
(L1記録層)Zn:W:Pd=60:20:20
(L2上下誘電体層)In:Sn=9:1
(L2記録層)Zn:W:Pd=60:30:10
(L3上下誘電体層)In:Si:Zr=50:25:25
(L3記録層)Zn:W:Pd=60:30:10
更に、複数の特定記録層を設けてその上下、又は片側にIn/Al酸化物層を隣接して設ける場合、各特定記録層に隣接して設けるIn/Al酸化物層は、上述の各例においては異なる組成を含んでいる。これに対して、各特定記録層に隣接して設けるIn/Al酸化物層を全て同一の組成とし、膜厚のみを変化させる構成としてもよい。
その他、本発明は上述の例に限定されることなく、本発明構成を逸脱しない範囲で種々の変形、変更が可能である。
Claims (8)
- 基板と、
2層以上4層以下の記録層を有し、
前記記録層のうち少なくとも1以上の記録層は、PdOと、PdO2とを含むと共に、完全に酸化された、In、Zn、Al、Snのうち少なくとも1つを含む組成の特定記録層とされ、
前記特定記録層に隣接して、In及びAlの少なくともいずれかを主成分とするIn/Al酸化物層が設けられる
光記録媒体。 - 前記特定記録層の下層及び上層の両側に隣接して、前記In/Al酸化物層が設けられる請求項1に記載の光記録媒体。
- 前記記録層のうち、記録用光の入射側とは反対側の一層を除いて少なくとも1以上の記録層が、前記特定記録層とされる請求項1に記載の光記録媒体。
- 前記記録層は、記録用光の波長405nm、集光レンズの開口数NA0.85の光学系に対して、一層当たりの記録容量が25GB以上とされる請求項1に記載の光記録媒体。
- 前記記録層が3層以上とされ、
前記記録層は、記録用光の波長405nm、集光レンズの開口数NA0.85の光学系に対して、一層当たりの記録容量が30GB以上とされる請求項1に記載の光記録媒体。 - 前記In/Al酸化物層がInSnO層又はInSiZrO層である請求項1に記載の光記録媒体。
- 前記特定記録層がZn及びWを含み、前記特定記録層に隣接してInを主成分とする酸化物層が設けられる請求項1に記載の光記録媒体。
- 前記特定記録層に隣接する前記Inを主成分とする酸化物層がInSnO層又はInSiZrO層である請求項7に記載の光記録媒体。
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JP5592621B2 (ja) * | 2009-08-20 | 2014-09-17 | ソニー株式会社 | 光記録媒体 |
JP2011065722A (ja) * | 2009-09-18 | 2011-03-31 | Sony Corp | 光記録媒体の製造方法、光記録媒体 |
JP5485091B2 (ja) * | 2010-09-16 | 2014-05-07 | ソニー株式会社 | 光記録媒体 |
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WO2010055865A1 (ja) * | 2008-11-12 | 2010-05-20 | 株式会社神戸製鋼所 | 光情報記録媒体用記録層、光情報記録媒体およびスパッタリングターゲット |
JP2010137545A (ja) * | 2008-11-12 | 2010-06-24 | Kobe Steel Ltd | 光情報記録媒体およびスパッタリングターゲット |
WO2011034153A1 (ja) * | 2009-09-18 | 2011-03-24 | 株式会社神戸製鋼所 | 光情報記録媒体用記録層、光情報記録媒体およびスパッタリングターゲット |
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JP2014017031A (ja) * | 2012-07-06 | 2014-01-30 | Sony Corp | 光情報記録媒体 |
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US8685517B2 (en) | 2014-04-01 |
EP2562755A1 (en) | 2013-02-27 |
TWI416515B (zh) | 2013-11-21 |
WO2011132371A1 (ja) | 2011-10-27 |
KR20130060171A (ko) | 2013-06-07 |
EP2562755A4 (en) | 2016-07-27 |
EP2562755B1 (en) | 2018-03-28 |
US20130052389A1 (en) | 2013-02-28 |
JP5726557B2 (ja) | 2015-06-03 |
TW201222544A (en) | 2012-06-01 |
CN102859596A (zh) | 2013-01-02 |
CN102859596B (zh) | 2016-03-16 |
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