JP2011222688A5 - - Google Patents
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- Publication number
- JP2011222688A5 JP2011222688A5 JP2010089307A JP2010089307A JP2011222688A5 JP 2011222688 A5 JP2011222688 A5 JP 2011222688A5 JP 2010089307 A JP2010089307 A JP 2010089307A JP 2010089307 A JP2010089307 A JP 2010089307A JP 2011222688 A5 JP2011222688 A5 JP 2011222688A5
- Authority
- JP
- Japan
- Prior art keywords
- sacrificial layer
- insulating layer
- stepped portion
- layer
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000010409 thin film Substances 0.000 claims description 38
- 238000000034 method Methods 0.000 claims description 28
- 238000001312 dry etching Methods 0.000 claims description 22
- 239000007789 gas Substances 0.000 claims description 13
- 239000010408 film Substances 0.000 claims description 12
- 238000000059 patterning Methods 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 11
- 238000001039 wet etching Methods 0.000 claims description 11
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 10
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims description 7
- 239000011733 molybdenum Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 239000011651 chromium Substances 0.000 claims description 5
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 4
- 229910017604 nitric acid Inorganic materials 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 229910000599 Cr alloy Inorganic materials 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 239000000788 chromium alloy Substances 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 2
- 239000011737 fluorine Substances 0.000 claims description 2
- 229910052731 fluorine Inorganic materials 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 239000007788 liquid Substances 0.000 claims 2
- 239000000758 substrate Substances 0.000 description 27
- 230000015572 biosynthetic process Effects 0.000 description 13
- 229920002120 photoresistant polymer Polymers 0.000 description 11
- 239000011810 insulating material Substances 0.000 description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000002265 prevention Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000000052 vinegar Substances 0.000 description 1
- 235000021419 vinegar Nutrition 0.000 description 1
Images
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010089307A JP5707725B2 (ja) | 2010-04-08 | 2010-04-08 | 薄膜のパターニング方法及び表示パネルの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010089307A JP5707725B2 (ja) | 2010-04-08 | 2010-04-08 | 薄膜のパターニング方法及び表示パネルの製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011222688A JP2011222688A (ja) | 2011-11-04 |
| JP2011222688A5 true JP2011222688A5 (enExample) | 2013-05-16 |
| JP5707725B2 JP5707725B2 (ja) | 2015-04-30 |
Family
ID=45039300
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010089307A Expired - Fee Related JP5707725B2 (ja) | 2010-04-08 | 2010-04-08 | 薄膜のパターニング方法及び表示パネルの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5707725B2 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20140088810A (ko) | 2013-01-03 | 2014-07-11 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
| JP6436333B2 (ja) * | 2013-08-06 | 2018-12-12 | Ｔｉａｎｍａ Ｊａｐａｎ株式会社 | 表示装置 |
| CN118116896A (zh) * | 2022-11-30 | 2024-05-31 | 成都辰显光电有限公司 | 显示面板、制作方法及显示装置 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5334484A (en) * | 1976-09-10 | 1978-03-31 | Toshiba Corp | Forming method for multi layer wiring |
| JPH069201B2 (ja) * | 1984-01-11 | 1994-02-02 | 株式会社日立製作所 | 半導体装置用電極・配線 |
| JPH0258222A (ja) * | 1988-08-23 | 1990-02-27 | Oki Electric Ind Co Ltd | パターン形成方法 |
| JPH04116954A (ja) * | 1990-09-07 | 1992-04-17 | Nec Corp | 半導体装置の製造方法 |
| KR930007752B1 (ko) * | 1990-11-21 | 1993-08-18 | 현대전자산업 주식회사 | 반도체 소자의 접속장치 및 그 제조방법 |
| JPH04349667A (ja) * | 1991-05-28 | 1992-12-04 | Toshiba Corp | 半導体装置及びその製造方法 |
| JPH05251772A (ja) * | 1991-12-02 | 1993-09-28 | Sumitomo Electric Ind Ltd | 超電導多層配線およびその作製方法 |
| JPH05234994A (ja) * | 1992-02-20 | 1993-09-10 | Seiko Epson Corp | コンタクトホールの形成方法 |
| US6111319A (en) * | 1995-12-19 | 2000-08-29 | Stmicroelectronics, Inc. | Method of forming submicron contacts and vias in an integrated circuit |
| JPH11233620A (ja) * | 1998-02-09 | 1999-08-27 | Oki Electric Ind Co Ltd | 半導体装置におけるコンタクトホール形成方法 |
| JP2005159264A (ja) * | 2003-11-06 | 2005-06-16 | Semiconductor Leading Edge Technologies Inc | パターン形成方法及び半導体装置の製造方法 |
| JP2006303307A (ja) * | 2005-04-22 | 2006-11-02 | Toshiba Corp | 半導体装置およびその製造方法 |
-
2010
- 2010-04-08 JP JP2010089307A patent/JP5707725B2/ja not_active Expired - Fee Related
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