JP2011205853A - 電圧変換器 - Google Patents
電圧変換器 Download PDFInfo
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- JP2011205853A JP2011205853A JP2010073129A JP2010073129A JP2011205853A JP 2011205853 A JP2011205853 A JP 2011205853A JP 2010073129 A JP2010073129 A JP 2010073129A JP 2010073129 A JP2010073129 A JP 2010073129A JP 2011205853 A JP2011205853 A JP 2011205853A
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
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- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5389—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates the chips being integrally enclosed by the interconnect and support structures
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- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
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- H01L2223/6677—High-frequency adaptations for passive devices for antenna, e.g. antenna included within housing of semiconductor device
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
- H01L2224/241—Disposition
- H01L2224/24151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/24221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/24225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/24226—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the HDI interconnect connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the item being planar
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73267—Layer and HDI connectors
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/01082—Lead [Pb]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/182—Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
- H05K1/185—Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit
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- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
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- H05K2201/1003—Non-printed inductor
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- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
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- H05K2201/10053—Switch
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- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/14—Related to the order of processing steps
- H05K2203/1461—Applying or finishing the circuit pattern after another process, e.g. after filling of vias with conductive paste, after making printed resistors
- H05K2203/1469—Circuit made after mounting or encapsulation of the components
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Dc-Dc Converters (AREA)
Abstract
【解決手段】電圧変換器としてのDCDCコンバータ1は、ICチップ7が内蔵された能動部品内蔵基板2と、その上に載置された入力側キャパシタCinと出力側キャパシタCoutとを備え、その内部にICチップ7を挟むように、グラウンド層33G‐1,33G‐2、及びグラウンド層32Gが形成されたものである。グラウンド層33G‐1には、入力側キャパシタCinが接続され、グラウンド層33G‐2には、出力側キャパシタCoutが接続されている。また、グラウンド層32Gは、ICチップ7の端子に接続され、且つ、入力側キャパシタCin、及び出力側キャパシタCoutが、グラウンド層33G‐1,33G‐2を介して互いに接続されている。
【選択図】図2
Description
図1は、本発明による電圧変換器の好適な一実施形態であるDCDCコンバータ1(電源モジュール)の構造を概略的に示す断面図であり、DCDCコンバータ1を後述するICチップ7の位置で破断し、ICチップ7の一方側から矢視した状態の断面を示す。また、図2は、図1に示すDCDCコンバータ1における等価回路図(寄生成分を含む。)である。
Claims (6)
- 能動部品が内蔵された基板と、
前記基板上に載置され、且つ、所定の接地電位に接続され接地側端子を含む入力側キャパシタ及び出力側キャパシタと、
前記能動部品を挟んで形成され、且つ、所定の接地電位に接続されている第1導体層及び第2導体層と、
を備え、
前記第1導体層は、前記入力側キャパシタの接地側端子に接続されている入力側導体層、及び、該入力側導体層とは別体に設けられており、且つ、前記出力側キャパシタの接地側端子に接続されている出力側導体層を有し、
前記第2導体層は、前記能動部品の端子に接続されており、
前記入力側キャパシタの接地側端子は、前記入力側導体層を介して前記第2導体層と接続され、
前記出力側キャパシタの接地側端子は、前記出力側導体層を介して前記第2導体層と接続されている、
電圧変換器。 - 前記能動部品は、該能動部品の端子が、前記入力側キャパシタとは反対側を向くように配置されている、
請求項1記載の電圧変換器。 - 前記出力側導体層は、該出力側導体層の表面に凹凸を有し、且つ、前記能動部品を覆うように形成されている、
請求項1又は2記載の電圧変換器。 - 前記出力側導体層は、所定の間隔で複数の孔が形成されている、
請求項1乃至3のいずれか1項記載の電圧変換器。 - 前記入力側キャパシタの接地側端子は、前記所定の接地電位に1箇所で接続されている、
請求項1乃至4のいずれか1項記載の電圧変換器。 - 前記出力側キャパシタの接地側端子は、前記所定の接地電位と複数箇所で接続されている、
請求項1乃至5のいずれか1項記載の電圧変換器。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010073129A JP4953034B2 (ja) | 2010-03-26 | 2010-03-26 | 電圧変換器 |
US13/051,525 US8619449B2 (en) | 2010-03-26 | 2011-03-18 | Voltage converter |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010073129A JP4953034B2 (ja) | 2010-03-26 | 2010-03-26 | 電圧変換器 |
Publications (2)
Publication Number | Publication Date |
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JP2011205853A true JP2011205853A (ja) | 2011-10-13 |
JP4953034B2 JP4953034B2 (ja) | 2012-06-13 |
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JP2010073129A Active JP4953034B2 (ja) | 2010-03-26 | 2010-03-26 | 電圧変換器 |
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US (1) | US8619449B2 (ja) |
JP (1) | JP4953034B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021040061A (ja) * | 2019-09-04 | 2021-03-11 | Tdk株式会社 | 電子部品内蔵回路基板及びその製造方法 |
Families Citing this family (17)
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CN103327726A (zh) * | 2012-03-19 | 2013-09-25 | 鸿富锦精密工业(深圳)有限公司 | 电子装置及其印刷电路板的布局结构 |
FR3002703B1 (fr) * | 2013-02-25 | 2017-07-21 | Schneider Toshiba Inverter Europe Sas | Dispositif de commande employe dans un systeme d'alimentation electrique a decoupage |
JP6102486B2 (ja) | 2013-05-10 | 2017-03-29 | Tdk株式会社 | 複合電源管理装置及び通信装置 |
US9825522B2 (en) * | 2015-04-09 | 2017-11-21 | Ford Global Technologies, Llc | Method and apparatus for coupling cancellation |
US11432437B2 (en) * | 2016-08-22 | 2022-08-30 | Mitsubishi Electric Corporation | Power converter |
US10063149B2 (en) * | 2016-11-23 | 2018-08-28 | Apple Inc. | Multi-phase switching power converter module stack |
US10658331B2 (en) * | 2018-08-28 | 2020-05-19 | Ferric Inc. | Processor module with integrated packaged power converter |
US11158451B2 (en) | 2018-10-09 | 2021-10-26 | Delta Electronics, Inc. | Power module |
US10973127B2 (en) | 2018-10-09 | 2021-04-06 | Delta Electronics, Inc. | Voltage regulator module |
US11166373B2 (en) * | 2018-10-09 | 2021-11-02 | Delta Electronics, Inc. | Voltage regulator module |
US11277917B2 (en) | 2019-03-12 | 2022-03-15 | Advanced Semiconductor Engineering, Inc. | Embedded component package structure, embedded type panel substrate and manufacturing method thereof |
US11296030B2 (en) | 2019-04-29 | 2022-04-05 | Advanced Semiconductor Engineering, Inc. | Embedded component package structure and manufacturing method thereof |
US10950551B2 (en) | 2019-04-29 | 2021-03-16 | Advanced Semiconductor Engineering, Inc. | Embedded component package structure and manufacturing method thereof |
US11147165B2 (en) | 2019-10-17 | 2021-10-12 | Infineon Technologies Austria Ag | Electronic system and interposer having an embedded power device module |
US11071206B2 (en) | 2019-10-17 | 2021-07-20 | Infineon Technologies Austria Ag | Electronic system and processor substrate having an embedded power device module |
US11183934B2 (en) | 2019-10-17 | 2021-11-23 | Infineon Technologies Americas Corp. | Embedded substrate voltage regulators |
US20200373081A1 (en) * | 2020-08-10 | 2020-11-26 | Intel Corporation | Inductor with metal shield |
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JP2003115664A (ja) * | 2001-10-05 | 2003-04-18 | Matsushita Electric Ind Co Ltd | 電圧変換モジュール |
JP2004063676A (ja) * | 2002-07-26 | 2004-02-26 | Fdk Corp | マイクロコンバータ |
JP2004288793A (ja) * | 2003-03-20 | 2004-10-14 | Nec Tokin Corp | 直流電源回路内蔵基板およびその製造方法 |
JP2008130694A (ja) * | 2006-11-17 | 2008-06-05 | Tdk Corp | 電子部品モジュール |
JP2008288387A (ja) * | 2007-05-17 | 2008-11-27 | Tdk Corp | 配線構造及び基板 |
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US5355301A (en) * | 1992-02-28 | 1994-10-11 | Fuji Electric Co., Ltd. | One-chip type switching power supply device |
JP4995873B2 (ja) * | 2009-08-05 | 2012-08-08 | 株式会社東芝 | 半導体装置及び電源回路 |
JP2012023194A (ja) * | 2010-07-14 | 2012-02-02 | Toshiba Corp | Dc−dcコンバータ |
-
2010
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- 2011-03-18 US US13/051,525 patent/US8619449B2/en active Active
Patent Citations (5)
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JP2003115664A (ja) * | 2001-10-05 | 2003-04-18 | Matsushita Electric Ind Co Ltd | 電圧変換モジュール |
JP2004063676A (ja) * | 2002-07-26 | 2004-02-26 | Fdk Corp | マイクロコンバータ |
JP2004288793A (ja) * | 2003-03-20 | 2004-10-14 | Nec Tokin Corp | 直流電源回路内蔵基板およびその製造方法 |
JP2008130694A (ja) * | 2006-11-17 | 2008-06-05 | Tdk Corp | 電子部品モジュール |
JP2008288387A (ja) * | 2007-05-17 | 2008-11-27 | Tdk Corp | 配線構造及び基板 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021040061A (ja) * | 2019-09-04 | 2021-03-11 | Tdk株式会社 | 電子部品内蔵回路基板及びその製造方法 |
JP7318428B2 (ja) | 2019-09-04 | 2023-08-01 | Tdk株式会社 | 電子部品内蔵回路基板及びその製造方法 |
Also Published As
Publication number | Publication date |
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JP4953034B2 (ja) | 2012-06-13 |
US8619449B2 (en) | 2013-12-31 |
US20110234196A1 (en) | 2011-09-29 |
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