JP2011204782A - 不揮発性記憶装置 - Google Patents
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 73
- 239000002184 metal Substances 0.000 claims abstract description 71
- 150000004767 nitrides Chemical class 0.000 claims abstract description 49
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 34
- 239000000463 material Substances 0.000 claims abstract description 33
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 17
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 13
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 13
- 239000007769 metal material Substances 0.000 claims abstract description 11
- 238000003860 storage Methods 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 4
- 238000011144 upstream manufacturing Methods 0.000 claims description 4
- 230000008859 change Effects 0.000 abstract description 60
- 239000010410 layer Substances 0.000 description 161
- 238000000034 method Methods 0.000 description 44
- 239000011229 interlayer Substances 0.000 description 22
- 230000008569 process Effects 0.000 description 20
- 229910021417 amorphous silicon Inorganic materials 0.000 description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 13
- 229910052760 oxygen Inorganic materials 0.000 description 13
- 239000001301 oxygen Substances 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 229920005591 polysilicon Polymers 0.000 description 8
- 239000000203 mixture Substances 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000002950 deficient Effects 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 206010021143 Hypoxia Diseases 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004491 TaAlN Inorganic materials 0.000 description 1
- 229910004166 TaN Inorganic materials 0.000 description 1
- 229910010037 TiAlN Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- -1 or the like Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
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- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
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- H—ELECTRICITY
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- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
- H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
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- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/023—Formation of switching materials, e.g. deposition of layers by chemical vapor deposition, e.g. MOCVD, ALD
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
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- H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
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- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
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- H10N70/883—Oxides or nitrides
- H10N70/8833—Binary metal oxides, e.g. TaOx
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- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
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- G11C2013/0083—Write to perform initialising, forming process, electro forming or conditioning
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Abstract
【解決手段】下部電極層BEと、金属酸化膜からなる抵抗変化層RWと、上部電極層TEとが積層された抵抗変化素子VRを有し、上部電極層TE側から下部電極層BE側に電流が流れる不揮発性記憶装置において、上部電極層TEは、金属窒化物材料によって構成されるとともに、該金属窒化物材料の化学量論比に比して窒素が多く含まれ、下部電極層BEは、金属材料によって構成される。
【選択図】図2
Description
図1は、本発明の実施の形態による不揮発性記憶装置のメモリセルアレイ構成の一例を示す図である。この図において、紙面の左右方向をX方向とし、紙面内のX方向に垂直な方向をY方向とする。X方向(行方向)に延在する複数のワード線WLと、ワード線WLとは異なる高さにY方向(列方向)に延在する複数のビット線BLとが、互いに交差して配設され、これらの各交差部に抵抗変化素子VRと整流素子Dとが直列に接続された抵抗変化型メモリセル(以下、単にメモリセルともいう)MCが配置される。この例では、抵抗変化素子VRは一端がビット線BLに接続され、他端が整流素子Dを介してワード線WLに接続されている。
x>ay/b ・・・(1)
y>bx/a ・・・(2)
図5は、第2の実施の形態による不揮発性記憶装置の構造の一例を模式的に示す断面図である。第2の実施の形態では、第1の実施の形態の図2と比較して、抵抗変化素子VRの陰極としての下部電極層BEが省略された構造となっている。また、ここでは、整流素子Dは、ポリシリコンによって構成されており、抵抗変化層RWは、Hf,Zr,Ni,Co,Al,Mn,Ti,TaおよびWの群から選択される少なくとも1つの金属元素を含む酸化膜によって構成されている。なお、第1の実施の形態と同一の構成要素には同一の符号を付して、その説明を省略している。
Claims (5)
- 第1の電極と、金属酸化膜からなる不揮発性記憶層と、第2の電極とが積層された不揮発性記憶素子を有し、前記第1の電極側から前記第2の電極側に電流が流れる不揮発性記憶装置において、
前記第1の電極は、金属窒化物材料によって構成されるとともに、該金属窒化物材料の化学量論比に比して窒素が多く含まれ、
前記第2の電極は、金属材料によって構成されることを特徴とする不揮発性記憶装置。 - 第1の電極と、金属酸化膜からなる不揮発性記憶層と、第2の電極とが積層された不揮発性記憶素子を有し、前記第1の電極側から前記第2の電極側に電流が流れる不揮発性記憶装置において、
前記第1の電極は、金属窒化物材料によって構成されるとともに、該金属窒化物材料の化学量論比に比して窒素が多く含まれ、
前記第2の電極は、金属窒化物材料によって構成されるとともに、該金属窒化物材料の化学量論比に比して金属元素が多く含まれることを特徴とする不揮発性記憶装置。 - 前記第1の電極側から前記第2の電極側に電流を流す整流素子が、前記不揮発性記憶素子に直列に接続されることを特徴とする請求項1または2に記載の不揮発性記憶装置。
- 整流素子と、
前記整流素子での電流が流れる方向に対して上流側に、前記整流素子に接して設けられる金属酸化膜からなる不揮発性記憶層と、前記不揮発性記憶層の前記整流素子とは対向する側に設けられる電極層と、を有する不揮発性記憶素子と、
を備える不揮発性記憶装置であって、
前記電極層は、金属窒化物材料によって構成されるとともに、該金属窒化物材料の化学量論比に比して窒素が多く含まれ、
前記整流素子は、前記金属酸化膜中の金属元素よりも電気陰性度の大きい元素からなる半導体材料によって構成されることを特徴とする不揮発性記憶装置。 - 前記金属窒化物材料は、Ti,TaおよびWの群から選択される少なくとも1つの金属の窒化物であることを特徴とする請求項1〜4のいずれか1つに記載の不揮発性記憶装置。
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JP2010068547A JP5135373B2 (ja) | 2010-03-24 | 2010-03-24 | 不揮発性記憶装置 |
US13/051,650 US20110233502A1 (en) | 2010-03-24 | 2011-03-18 | Nonvolatile memory device |
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JP5135373B2 JP5135373B2 (ja) | 2013-02-06 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014053522A (ja) * | 2012-09-10 | 2014-03-20 | Toshiba Corp | 記憶装置 |
JP2017049945A (ja) * | 2015-09-04 | 2017-03-09 | 株式会社東芝 | 信号発生装置および伝送装置 |
Families Citing this family (6)
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US8278139B2 (en) | 2009-09-25 | 2012-10-02 | Applied Materials, Inc. | Passivating glue layer to improve amorphous carbon to metal adhesion |
JP2014011391A (ja) * | 2012-07-02 | 2014-01-20 | Toshiba Corp | 半導体記憶装置 |
JP2014103326A (ja) * | 2012-11-21 | 2014-06-05 | Panasonic Corp | 不揮発性記憶素子およびその製造方法 |
JP5650855B2 (ja) * | 2013-02-08 | 2015-01-07 | パナソニックIpマネジメント株式会社 | 不揮発性記憶素子の製造方法、不揮発性記憶素子及び不揮発性記憶装置 |
US9768230B2 (en) * | 2013-11-20 | 2017-09-19 | Globalfoundries Singapore Pte. Ltd. | High rectifying ratio diode |
US9978938B2 (en) * | 2015-11-13 | 2018-05-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Resistive RAM structure and method of fabrication thereof |
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2010
- 2010-03-24 JP JP2010068547A patent/JP5135373B2/ja not_active Expired - Fee Related
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- 2011-03-18 US US13/051,650 patent/US20110233502A1/en not_active Abandoned
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JP2017049945A (ja) * | 2015-09-04 | 2017-03-09 | 株式会社東芝 | 信号発生装置および伝送装置 |
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