JP2011199003A5 - - Google Patents
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- Publication number
- JP2011199003A5 JP2011199003A5 JP2010064080A JP2010064080A JP2011199003A5 JP 2011199003 A5 JP2011199003 A5 JP 2011199003A5 JP 2010064080 A JP2010064080 A JP 2010064080A JP 2010064080 A JP2010064080 A JP 2010064080A JP 2011199003 A5 JP2011199003 A5 JP 2011199003A5
- Authority
- JP
- Japan
- Prior art keywords
- processing
- gas
- plasma
- oxide film
- silicon oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 claims 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims 6
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims 5
- 230000003647 oxidation Effects 0.000 claims 5
- 238000007254 oxidation reaction Methods 0.000 claims 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 239000010703 silicon Substances 0.000 claims 3
- 238000002161 passivation Methods 0.000 claims 1
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010064080A JP2011199003A (ja) | 2010-03-19 | 2010-03-19 | シリコン酸化膜の形成方法、及びプラズマ処理装置 |
| KR1020127026718A KR20130000409A (ko) | 2010-03-19 | 2011-03-09 | 실리콘 산화막의 형성 방법, 및 플라즈마 산화 처리 장치 |
| PCT/JP2011/055482 WO2011114961A1 (ja) | 2010-03-19 | 2011-03-09 | シリコン酸化膜の形成方法、及びプラズマ酸化処理装置 |
| US13/636,030 US20130012033A1 (en) | 2010-03-19 | 2011-03-09 | Silicon oxide film forming method and plasma oxidation apparatus |
| CN2011800070263A CN102714158A (zh) | 2010-03-19 | 2011-03-09 | 硅氧化膜的形成方法和等离子体氧化处理装置 |
| TW100109364A TW201203365A (en) | 2010-03-19 | 2011-03-18 | Silicon oxide film forming method, and plasma oxidation apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010064080A JP2011199003A (ja) | 2010-03-19 | 2010-03-19 | シリコン酸化膜の形成方法、及びプラズマ処理装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2011199003A JP2011199003A (ja) | 2011-10-06 |
| JP2011199003A5 true JP2011199003A5 (enExample) | 2013-03-21 |
Family
ID=44649059
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010064080A Pending JP2011199003A (ja) | 2010-03-19 | 2010-03-19 | シリコン酸化膜の形成方法、及びプラズマ処理装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20130012033A1 (enExample) |
| JP (1) | JP2011199003A (enExample) |
| KR (1) | KR20130000409A (enExample) |
| CN (1) | CN102714158A (enExample) |
| TW (1) | TW201203365A (enExample) |
| WO (1) | WO2011114961A1 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102427097B (zh) * | 2011-11-23 | 2014-05-07 | 中国科学院物理研究所 | 一种硅的氧化钝化方法及钝化装置 |
| JP5618098B2 (ja) * | 2012-04-23 | 2014-11-05 | 信越半導体株式会社 | Ｃ−ｖ特性測定方法 |
| CN103695837B (zh) * | 2013-11-29 | 2015-09-30 | 莱芜钢铁集团有限公司 | 一种建筑钢筋表面防锈方法 |
| TWI524388B (zh) | 2013-12-27 | 2016-03-01 | Hitachi Int Electric Inc | A substrate processing apparatus, a manufacturing method of a semiconductor device, and a recording medium |
| US9583337B2 (en) | 2014-03-26 | 2017-02-28 | Ultratech, Inc. | Oxygen radical enhanced atomic-layer deposition using ozone plasma |
| JP6242283B2 (ja) * | 2014-04-30 | 2017-12-06 | 東京エレクトロン株式会社 | 成膜方法 |
| US20160277244A1 (en) * | 2015-03-18 | 2016-09-22 | ThePlatform, LLC. | Methods And Systems For Content Presentation Optimization |
| US9466504B1 (en) * | 2015-03-31 | 2016-10-11 | Micron Technology, Inc. | Methods of fabricating features associated with semiconductor substrates |
| CN108463930B (zh) * | 2016-01-08 | 2020-05-12 | 索尼公司 | 半导体发光器件、显示单元和电子设备 |
| JP7296855B2 (ja) * | 2019-11-07 | 2023-06-23 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| US12288672B2 (en) | 2020-01-15 | 2025-04-29 | Applied Materials, Inc. | Methods and apparatus for carbon compound film deposition |
| US11512387B2 (en) * | 2020-04-13 | 2022-11-29 | Applied Materials, Inc. | Methods and apparatus for passivating a target |
| CN114649180B (zh) * | 2020-12-21 | 2025-04-08 | 中微半导体设备(上海)股份有限公司 | 等离子体处理装置零部件的处理方法、零部件及处理装置 |
| JP7743738B2 (ja) | 2021-09-14 | 2025-09-25 | 富士電機株式会社 | 半導体装置の製造方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07118522B2 (ja) * | 1990-10-24 | 1995-12-18 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 基板表面を酸化処理するための方法及び半導体の構造 |
| JPH08293494A (ja) * | 1995-04-24 | 1996-11-05 | Canon Inc | 半導体装置 |
| JPH11145131A (ja) * | 1997-03-18 | 1999-05-28 | Toshiba Corp | 半導体装置の製造方法及び半導体製造装置、及び半導体装置 |
| ATE418158T1 (de) * | 1999-08-17 | 2009-01-15 | Applied Materials Inc | Oberflächenbehandlung von kohlenstoffdotierten sio2-filmen zur erhöhung der stabilität während der o2-veraschung |
| JP3615160B2 (ja) * | 2001-07-03 | 2005-01-26 | 株式会社半導体プロセス研究所 | 絶縁膜の形成方法及び液晶パネルの製造方法 |
| US7465674B2 (en) * | 2005-05-31 | 2008-12-16 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
| US7943531B2 (en) * | 2007-10-22 | 2011-05-17 | Applied Materials, Inc. | Methods for forming a silicon oxide layer over a substrate |
| JP5475261B2 (ja) * | 2008-03-31 | 2014-04-16 | 東京エレクトロン株式会社 | プラズマ処理装置 |
-
2010
- 2010-03-19 JP JP2010064080A patent/JP2011199003A/ja active Pending
-
2011
- 2011-03-09 WO PCT/JP2011/055482 patent/WO2011114961A1/ja not_active Ceased
- 2011-03-09 KR KR1020127026718A patent/KR20130000409A/ko not_active Ceased
- 2011-03-09 US US13/636,030 patent/US20130012033A1/en not_active Abandoned
- 2011-03-09 CN CN2011800070263A patent/CN102714158A/zh active Pending
- 2011-03-18 TW TW100109364A patent/TW201203365A/zh unknown
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