CN102714158A - 硅氧化膜的形成方法和等离子体氧化处理装置 - Google Patents

硅氧化膜的形成方法和等离子体氧化处理装置 Download PDF

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Publication number
CN102714158A
CN102714158A CN2011800070263A CN201180007026A CN102714158A CN 102714158 A CN102714158 A CN 102714158A CN 2011800070263 A CN2011800070263 A CN 2011800070263A CN 201180007026 A CN201180007026 A CN 201180007026A CN 102714158 A CN102714158 A CN 102714158A
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China
Prior art keywords
gas
plasma
silicon oxide
processing
processing container
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Pending
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CN2011800070263A
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English (en)
Chinese (zh)
Inventor
壁义郎
大田尾修一郎
佐藤吉宏
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication of CN102714158A publication Critical patent/CN102714158A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32105—Oxidation of silicon-containing layers

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
CN2011800070263A 2010-03-19 2011-03-09 硅氧化膜的形成方法和等离子体氧化处理装置 Pending CN102714158A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010064080A JP2011199003A (ja) 2010-03-19 2010-03-19 シリコン酸化膜の形成方法、及びプラズマ処理装置
JP2010-064080 2010-03-19
PCT/JP2011/055482 WO2011114961A1 (ja) 2010-03-19 2011-03-09 シリコン酸化膜の形成方法、及びプラズマ酸化処理装置

Publications (1)

Publication Number Publication Date
CN102714158A true CN102714158A (zh) 2012-10-03

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Family Applications (1)

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CN2011800070263A Pending CN102714158A (zh) 2010-03-19 2011-03-09 硅氧化膜的形成方法和等离子体氧化处理装置

Country Status (6)

Country Link
US (1) US20130012033A1 (enExample)
JP (1) JP2011199003A (enExample)
KR (1) KR20130000409A (enExample)
CN (1) CN102714158A (enExample)
TW (1) TW201203365A (enExample)
WO (1) WO2011114961A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112786425A (zh) * 2019-11-07 2021-05-11 东京毅力科创株式会社 等离子体处理装置和等离子体处理方法
CN114981479A (zh) * 2020-04-13 2022-08-30 应用材料公司 用于钝化靶材的方法及设备

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102427097B (zh) * 2011-11-23 2014-05-07 中国科学院物理研究所 一种硅的氧化钝化方法及钝化装置
JP5618098B2 (ja) * 2012-04-23 2014-11-05 信越半導体株式会社 Ｃ−ｖ特性測定方法
CN103695837B (zh) * 2013-11-29 2015-09-30 莱芜钢铁集团有限公司 一种建筑钢筋表面防锈方法
TWI524388B (zh) * 2013-12-27 2016-03-01 Hitachi Int Electric Inc A substrate processing apparatus, a manufacturing method of a semiconductor device, and a recording medium
US9583337B2 (en) * 2014-03-26 2017-02-28 Ultratech, Inc. Oxygen radical enhanced atomic-layer deposition using ozone plasma
JP6242283B2 (ja) * 2014-04-30 2017-12-06 東京エレクトロン株式会社 成膜方法
US20160277244A1 (en) * 2015-03-18 2016-09-22 ThePlatform, LLC. Methods And Systems For Content Presentation Optimization
US9466504B1 (en) * 2015-03-31 2016-10-11 Micron Technology, Inc. Methods of fabricating features associated with semiconductor substrates
JPWO2017119365A1 (ja) * 2016-01-08 2018-11-01 ソニー株式会社 半導体発光素子、表示装置および電子機器
US12288672B2 (en) * 2020-01-15 2025-04-29 Applied Materials, Inc. Methods and apparatus for carbon compound film deposition
CN114649180B (zh) * 2020-12-21 2025-04-08 中微半导体设备(上海)股份有限公司 等离子体处理装置零部件的处理方法、零部件及处理装置
JP7743738B2 (ja) 2021-09-14 2025-09-25 富士電機株式会社 半導体装置の製造方法

Citations (4)

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Publication number Priority date Publication date Assignee Title
JPH04246161A (ja) * 1990-10-24 1992-09-02 Internatl Business Mach Corp <Ibm> 基板表面を酸化処理するための方法及び半導体の構造
US20030008528A1 (en) * 1999-08-17 2003-01-09 Applied Materials, Inc. Surface treatment of c-doped SiO2 film to enhance film stability during 02 ashing
US7465674B2 (en) * 2005-05-31 2008-12-16 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US20090104791A1 (en) * 2007-10-22 2009-04-23 Applied Materials, Inc. A Delaware Corporation Methods for Forming a Silicon Oxide Layer Over a Substrate

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JPH08293494A (ja) * 1995-04-24 1996-11-05 Canon Inc 半導体装置
JPH11145131A (ja) * 1997-03-18 1999-05-28 Toshiba Corp 半導体装置の製造方法及び半導体製造装置、及び半導体装置
JP3615160B2 (ja) * 2001-07-03 2005-01-26 株式会社半導体プロセス研究所 絶縁膜の形成方法及び液晶パネルの製造方法
JP5475261B2 (ja) * 2008-03-31 2014-04-16 東京エレクトロン株式会社 プラズマ処理装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04246161A (ja) * 1990-10-24 1992-09-02 Internatl Business Mach Corp <Ibm> 基板表面を酸化処理するための方法及び半導体の構造
US20030008528A1 (en) * 1999-08-17 2003-01-09 Applied Materials, Inc. Surface treatment of c-doped SiO2 film to enhance film stability during 02 ashing
US7465674B2 (en) * 2005-05-31 2008-12-16 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US20090104791A1 (en) * 2007-10-22 2009-04-23 Applied Materials, Inc. A Delaware Corporation Methods for Forming a Silicon Oxide Layer Over a Substrate

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112786425A (zh) * 2019-11-07 2021-05-11 东京毅力科创株式会社 等离子体处理装置和等离子体处理方法
CN112786425B (zh) * 2019-11-07 2024-09-20 东京毅力科创株式会社 等离子体处理装置和等离子体处理方法
CN114981479A (zh) * 2020-04-13 2022-08-30 应用材料公司 用于钝化靶材的方法及设备
CN114981479B (zh) * 2020-04-13 2025-01-21 应用材料公司 用于钝化靶材的方法及设备

Also Published As

Publication number Publication date
KR20130000409A (ko) 2013-01-02
US20130012033A1 (en) 2013-01-10
TW201203365A (en) 2012-01-16
JP2011199003A (ja) 2011-10-06
WO2011114961A1 (ja) 2011-09-22

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Application publication date: 20121003