JP2011199003A - シリコン酸化膜の形成方法、及びプラズマ処理装置 - Google Patents

シリコン酸化膜の形成方法、及びプラズマ処理装置 Download PDF

Info

Publication number
JP2011199003A
JP2011199003A JP2010064080A JP2010064080A JP2011199003A JP 2011199003 A JP2011199003 A JP 2011199003A JP 2010064080 A JP2010064080 A JP 2010064080A JP 2010064080 A JP2010064080 A JP 2010064080A JP 2011199003 A JP2011199003 A JP 2011199003A
Authority
JP
Japan
Prior art keywords
gas
processing
plasma
oxide film
silicon oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010064080A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011199003A5 (enExample
Inventor
Yoshiro Kabe
義郎 壁
Shuichiro Otao
修一郎 大田尾
Yoshihiro Sato
吉宏 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2010064080A priority Critical patent/JP2011199003A/ja
Priority to KR1020127026718A priority patent/KR20130000409A/ko
Priority to CN2011800070263A priority patent/CN102714158A/zh
Priority to US13/636,030 priority patent/US20130012033A1/en
Priority to PCT/JP2011/055482 priority patent/WO2011114961A1/ja
Priority to TW100109364A priority patent/TW201203365A/zh
Publication of JP2011199003A publication Critical patent/JP2011199003A/ja
Publication of JP2011199003A5 publication Critical patent/JP2011199003A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H10P14/69215—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32105—Oxidation of silicon-containing layers
    • H10P14/6308—
    • H10P14/6336—

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
JP2010064080A 2010-03-19 2010-03-19 シリコン酸化膜の形成方法、及びプラズマ処理装置 Pending JP2011199003A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2010064080A JP2011199003A (ja) 2010-03-19 2010-03-19 シリコン酸化膜の形成方法、及びプラズマ処理装置
KR1020127026718A KR20130000409A (ko) 2010-03-19 2011-03-09 실리콘 산화막의 형성 방법, 및 플라즈마 산화 처리 장치
CN2011800070263A CN102714158A (zh) 2010-03-19 2011-03-09 硅氧化膜的形成方法和等离子体氧化处理装置
US13/636,030 US20130012033A1 (en) 2010-03-19 2011-03-09 Silicon oxide film forming method and plasma oxidation apparatus
PCT/JP2011/055482 WO2011114961A1 (ja) 2010-03-19 2011-03-09 シリコン酸化膜の形成方法、及びプラズマ酸化処理装置
TW100109364A TW201203365A (en) 2010-03-19 2011-03-18 Silicon oxide film forming method, and plasma oxidation apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010064080A JP2011199003A (ja) 2010-03-19 2010-03-19 シリコン酸化膜の形成方法、及びプラズマ処理装置

Publications (2)

Publication Number Publication Date
JP2011199003A true JP2011199003A (ja) 2011-10-06
JP2011199003A5 JP2011199003A5 (enExample) 2013-03-21

Family

ID=44649059

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010064080A Pending JP2011199003A (ja) 2010-03-19 2010-03-19 シリコン酸化膜の形成方法、及びプラズマ処理装置

Country Status (6)

Country Link
US (1) US20130012033A1 (enExample)
JP (1) JP2011199003A (enExample)
KR (1) KR20130000409A (enExample)
CN (1) CN102714158A (enExample)
TW (1) TW201203365A (enExample)
WO (1) WO2011114961A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015188065A (ja) * 2014-03-26 2015-10-29 ウルトラテック インク オゾンプラズマを用いた酸素ラジカル強化原子層蒸着
JP2015211193A (ja) * 2014-04-30 2015-11-24 東京エレクトロン株式会社 成膜方法
US12451356B2 (en) 2021-09-14 2025-10-21 Fuji Electric Co., Ltd. Manufacturing method for semiconductor device

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102427097B (zh) * 2011-11-23 2014-05-07 中国科学院物理研究所 一种硅的氧化钝化方法及钝化装置
JP5618098B2 (ja) * 2012-04-23 2014-11-05 信越半導体株式会社 Ｃ−ｖ特性測定方法
CN103695837B (zh) * 2013-11-29 2015-09-30 莱芜钢铁集团有限公司 一种建筑钢筋表面防锈方法
TWI524388B (zh) 2013-12-27 2016-03-01 日立國際電氣股份有限公司 A substrate processing apparatus, a manufacturing method of a semiconductor device, and a recording medium
US20160277244A1 (en) * 2015-03-18 2016-09-22 ThePlatform, LLC. Methods And Systems For Content Presentation Optimization
US9466504B1 (en) * 2015-03-31 2016-10-11 Micron Technology, Inc. Methods of fabricating features associated with semiconductor substrates
WO2017119365A1 (ja) * 2016-01-08 2017-07-13 ソニー株式会社 半導体発光素子、表示装置および電子機器
JP7296855B2 (ja) * 2019-11-07 2023-06-23 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US12288672B2 (en) 2020-01-15 2025-04-29 Applied Materials, Inc. Methods and apparatus for carbon compound film deposition
US11512387B2 (en) * 2020-04-13 2022-11-29 Applied Materials, Inc. Methods and apparatus for passivating a target
CN114649180B (zh) * 2020-12-21 2025-04-08 中微半导体设备(上海)股份有限公司 等离子体处理装置零部件的处理方法、零部件及处理装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04246161A (ja) * 1990-10-24 1992-09-02 Internatl Business Mach Corp <Ibm> 基板表面を酸化処理するための方法及び半導体の構造
JPH08293494A (ja) * 1995-04-24 1996-11-05 Canon Inc 半導体装置
JPH11145131A (ja) * 1997-03-18 1999-05-28 Toshiba Corp 半導体装置の製造方法及び半導体製造装置、及び半導体装置
JP2003017480A (ja) * 2001-07-03 2003-01-17 Handotai Process Kenkyusho:Kk 絶縁膜の形成方法、液晶パネルの製造方法、及び絶縁膜形成装置。
JP2009267339A (ja) * 2008-03-31 2009-11-12 Tokyo Electron Ltd プラズマ処理装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1077477B1 (en) * 1999-08-17 2008-12-17 Applied Materials, Inc. Surface treatment of C-doped SiO2 film to enhance film stability during O2 ashing
US7465674B2 (en) * 2005-05-31 2008-12-16 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US7943531B2 (en) * 2007-10-22 2011-05-17 Applied Materials, Inc. Methods for forming a silicon oxide layer over a substrate

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04246161A (ja) * 1990-10-24 1992-09-02 Internatl Business Mach Corp <Ibm> 基板表面を酸化処理するための方法及び半導体の構造
JPH08293494A (ja) * 1995-04-24 1996-11-05 Canon Inc 半導体装置
JPH11145131A (ja) * 1997-03-18 1999-05-28 Toshiba Corp 半導体装置の製造方法及び半導体製造装置、及び半導体装置
JP2003017480A (ja) * 2001-07-03 2003-01-17 Handotai Process Kenkyusho:Kk 絶縁膜の形成方法、液晶パネルの製造方法、及び絶縁膜形成装置。
JP2009267339A (ja) * 2008-03-31 2009-11-12 Tokyo Electron Ltd プラズマ処理装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015188065A (ja) * 2014-03-26 2015-10-29 ウルトラテック インク オゾンプラズマを用いた酸素ラジカル強化原子層蒸着
JP2015211193A (ja) * 2014-04-30 2015-11-24 東京エレクトロン株式会社 成膜方法
US12451356B2 (en) 2021-09-14 2025-10-21 Fuji Electric Co., Ltd. Manufacturing method for semiconductor device

Also Published As

Publication number Publication date
US20130012033A1 (en) 2013-01-10
TW201203365A (en) 2012-01-16
WO2011114961A1 (ja) 2011-09-22
KR20130000409A (ko) 2013-01-02
CN102714158A (zh) 2012-10-03

Similar Documents

Publication Publication Date Title
JP2011199003A (ja) シリコン酸化膜の形成方法、及びプラズマ処理装置
US10017853B2 (en) Processing method of silicon nitride film and forming method of silicon nitride film
JP2011077321A (ja) 選択的プラズマ窒化処理方法及びプラズマ窒化処理装置
TW201207943A (en) Plasma nitridization method
JP5096047B2 (ja) マイクロ波プラズマ処理装置およびマイクロ波透過板
TW200913071A (en) Method for pretreating inner space of chamber in plasma nitridation, plasma processing method and plasma processing apparatus
JP5860392B2 (ja) プラズマ窒化処理方法及びプラズマ窒化処理装置
JP5231232B2 (ja) プラズマ酸化処理方法、プラズマ処理装置、及び、記憶媒体
JP4979575B2 (ja) 基板の窒化処理方法および絶縁膜の形成方法
JP5479013B2 (ja) プラズマ処理装置及びこれに用いる遅波板
JP5357487B2 (ja) シリコン酸化膜の形成方法、コンピュータ読み取り可能な記憶媒体およびプラズマ酸化処理装置
JPWO2007136049A1 (ja) シリコン酸化膜の形成方法および形成装置
WO2011013633A1 (ja) 平面アンテナ部材およびこれを備えたプラズマ処理装置
JP2009224455A (ja) 平面アンテナ部材およびこれを備えたプラズマ処理装置
WO2022102463A1 (ja) 基板処理方法および基板処理装置
JP5728565B2 (ja) プラズマ処理装置及びこれに用いる遅波板
JP2011216593A (ja) プラズマ窒化処理方法
JP2013033979A (ja) マイクロ波プラズマ処理装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130204

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20130204

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20131210

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20140408