KR20130000409A - 실리콘 산화막의 형성 방법, 및 플라즈마 산화 처리 장치 - Google Patents

실리콘 산화막의 형성 방법, 및 플라즈마 산화 처리 장치 Download PDF

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Publication number
KR20130000409A
KR20130000409A KR1020127026718A KR20127026718A KR20130000409A KR 20130000409 A KR20130000409 A KR 20130000409A KR 1020127026718 A KR1020127026718 A KR 1020127026718A KR 20127026718 A KR20127026718 A KR 20127026718A KR 20130000409 A KR20130000409 A KR 20130000409A
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KR
South Korea
Prior art keywords
gas
plasma
processing
oxide film
ozone
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Ceased
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KR1020127026718A
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English (en)
Korean (ko)
Inventor
요시로 가베
슈이치로 오타오
요시히로 사토
Original Assignee
도쿄엘렉트론가부시키가이샤
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Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20130000409A publication Critical patent/KR20130000409A/ko
Ceased legal-status Critical Current

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    • H10P14/69215—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H10P14/6308—
    • H10P14/6336—

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020127026718A 2010-03-19 2011-03-09 실리콘 산화막의 형성 방법, 및 플라즈마 산화 처리 장치 Ceased KR20130000409A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010064080A JP2011199003A (ja) 2010-03-19 2010-03-19 シリコン酸化膜の形成方法、及びプラズマ処理装置
JPJP-P-2010-064080 2010-03-19
PCT/JP2011/055482 WO2011114961A1 (ja) 2010-03-19 2011-03-09 シリコン酸化膜の形成方法、及びプラズマ酸化処理装置

Publications (1)

Publication Number Publication Date
KR20130000409A true KR20130000409A (ko) 2013-01-02

Family

ID=44649059

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127026718A Ceased KR20130000409A (ko) 2010-03-19 2011-03-09 실리콘 산화막의 형성 방법, 및 플라즈마 산화 처리 장치

Country Status (6)

Country Link
US (1) US20130012033A1 (enExample)
JP (1) JP2011199003A (enExample)
KR (1) KR20130000409A (enExample)
CN (1) CN102714158A (enExample)
TW (1) TW201203365A (enExample)
WO (1) WO2011114961A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102427097B (zh) * 2011-11-23 2014-05-07 中国科学院物理研究所 一种硅的氧化钝化方法及钝化装置
JP5618098B2 (ja) * 2012-04-23 2014-11-05 信越半導体株式会社 Ｃ−ｖ特性測定方法
CN103695837B (zh) * 2013-11-29 2015-09-30 莱芜钢铁集团有限公司 一种建筑钢筋表面防锈方法
TWI524388B (zh) 2013-12-27 2016-03-01 日立國際電氣股份有限公司 A substrate processing apparatus, a manufacturing method of a semiconductor device, and a recording medium
US9583337B2 (en) * 2014-03-26 2017-02-28 Ultratech, Inc. Oxygen radical enhanced atomic-layer deposition using ozone plasma
JP6242283B2 (ja) * 2014-04-30 2017-12-06 東京エレクトロン株式会社 成膜方法
US20160277244A1 (en) * 2015-03-18 2016-09-22 ThePlatform, LLC. Methods And Systems For Content Presentation Optimization
US9466504B1 (en) * 2015-03-31 2016-10-11 Micron Technology, Inc. Methods of fabricating features associated with semiconductor substrates
US10540916B2 (en) * 2016-01-08 2020-01-21 Sony Corporation Semiconductor light-emitting device, display unit, and electronic apparatus
JP7296855B2 (ja) * 2019-11-07 2023-06-23 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US12288672B2 (en) * 2020-01-15 2025-04-29 Applied Materials, Inc. Methods and apparatus for carbon compound film deposition
US11512387B2 (en) * 2020-04-13 2022-11-29 Applied Materials, Inc. Methods and apparatus for passivating a target
CN114649180B (zh) * 2020-12-21 2025-04-08 中微半导体设备(上海)股份有限公司 等离子体处理装置零部件的处理方法、零部件及处理装置
JP7743738B2 (ja) 2021-09-14 2025-09-25 富士電機株式会社 半導体装置の製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07118522B2 (ja) * 1990-10-24 1995-12-18 インターナショナル・ビジネス・マシーンズ・コーポレイション 基板表面を酸化処理するための方法及び半導体の構造
JPH08293494A (ja) * 1995-04-24 1996-11-05 Canon Inc 半導体装置
JPH11145131A (ja) * 1997-03-18 1999-05-28 Toshiba Corp 半導体装置の製造方法及び半導体製造装置、及び半導体装置
DE69940114D1 (de) * 1999-08-17 2009-01-29 Applied Materials Inc Oberflächenbehandlung von kohlenstoffdotierten SiO2-Filmen zur Erhöhung der Stabilität während der O2-Veraschung
JP3615160B2 (ja) * 2001-07-03 2005-01-26 株式会社半導体プロセス研究所 絶縁膜の形成方法及び液晶パネルの製造方法
US7465674B2 (en) * 2005-05-31 2008-12-16 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US7943531B2 (en) * 2007-10-22 2011-05-17 Applied Materials, Inc. Methods for forming a silicon oxide layer over a substrate
JP5475261B2 (ja) * 2008-03-31 2014-04-16 東京エレクトロン株式会社 プラズマ処理装置

Also Published As

Publication number Publication date
TW201203365A (en) 2012-01-16
JP2011199003A (ja) 2011-10-06
WO2011114961A1 (ja) 2011-09-22
US20130012033A1 (en) 2013-01-10
CN102714158A (zh) 2012-10-03

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