JP2013012353A5 - - Google Patents

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Publication number
JP2013012353A5
JP2013012353A5 JP2011143406A JP2011143406A JP2013012353A5 JP 2013012353 A5 JP2013012353 A5 JP 2013012353A5 JP 2011143406 A JP2011143406 A JP 2011143406A JP 2011143406 A JP2011143406 A JP 2011143406A JP 2013012353 A5 JP2013012353 A5 JP 2013012353A5
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JP
Japan
Prior art keywords
plasma processing
processing apparatus
gas
gas discharge
discharge plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2011143406A
Other languages
English (en)
Japanese (ja)
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JP2013012353A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2011143406A priority Critical patent/JP2013012353A/ja
Priority claimed from JP2011143406A external-priority patent/JP2013012353A/ja
Priority to KR1020110075837A priority patent/KR101274515B1/ko
Priority to US13/209,523 priority patent/US20130000847A1/en
Publication of JP2013012353A publication Critical patent/JP2013012353A/ja
Publication of JP2013012353A5 publication Critical patent/JP2013012353A5/ja
Pending legal-status Critical Current

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JP2011143406A 2011-06-28 2011-06-28 プラズマ処理装置 Pending JP2013012353A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2011143406A JP2013012353A (ja) 2011-06-28 2011-06-28 プラズマ処理装置
KR1020110075837A KR101274515B1 (ko) 2011-06-28 2011-07-29 플라즈마 처리장치
US13/209,523 US20130000847A1 (en) 2011-06-28 2011-08-15 Plasma processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011143406A JP2013012353A (ja) 2011-06-28 2011-06-28 プラズマ処理装置

Publications (2)

Publication Number Publication Date
JP2013012353A JP2013012353A (ja) 2013-01-17
JP2013012353A5 true JP2013012353A5 (enExample) 2014-06-19

Family

ID=47389393

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011143406A Pending JP2013012353A (ja) 2011-06-28 2011-06-28 プラズマ処理装置

Country Status (3)

Country Link
US (1) US20130000847A1 (enExample)
JP (1) JP2013012353A (enExample)
KR (1) KR101274515B1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160049279A1 (en) * 2014-08-14 2016-02-18 Allied Techfinders Co., Ltd. Plasma device
US9673287B2 (en) 2014-12-15 2017-06-06 Infineon Technologies Americas Corp. Reliable and robust electrical contact
JP2017045916A (ja) * 2015-08-28 2017-03-02 パナソニックＩｐマネジメント株式会社 プラズマ処理装置およびプラズマ処理方法
CN105931940B (zh) 2016-06-01 2018-09-21 京东方科技集团股份有限公司 一种电感耦合等离子体装置
CN108573891B (zh) * 2017-03-07 2022-01-11 北京北方华创微电子装备有限公司 等离子体加工设备
JP7182916B2 (ja) * 2018-06-26 2022-12-05 東京エレクトロン株式会社 プラズマ処理装置
JP7313269B2 (ja) * 2019-12-23 2023-07-24 東京エレクトロン株式会社 プラズマ処理装置
JP7623086B2 (ja) * 2021-09-13 2025-01-28 東京エレクトロン株式会社 プラズマ源及びプラズマ処理装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4209357A (en) * 1979-05-18 1980-06-24 Tegal Corporation Plasma reactor apparatus
JP3400909B2 (ja) * 1996-02-19 2003-04-28 松下電器産業株式会社 プラズマ処理方法及び装置
JP2943691B2 (ja) * 1996-04-25 1999-08-30 日本電気株式会社 プラズマ処理装置
US6123802A (en) * 1997-09-23 2000-09-26 Micron Technology, Inc. Method and apparatus for preventing plasma formation
US6123775A (en) * 1999-06-30 2000-09-26 Lam Research Corporation Reaction chamber component having improved temperature uniformity
JP5079949B2 (ja) * 2001-04-06 2012-11-21 東京エレクトロン株式会社 処理装置および処理方法
JP2002305184A (ja) * 2001-04-09 2002-10-18 Hitachi Ltd 半導体製造装置
KR100447248B1 (ko) * 2002-01-22 2004-09-07 주성엔지니어링(주) Ｉｃｐ 에쳐용 가스 확산판
US20070022954A1 (en) * 2003-09-03 2007-02-01 Tokyo Electron Limited Gas treatment device and heat readiting method
KR101213391B1 (ko) * 2005-08-26 2012-12-18 주성엔지니어링(주) 기판처리장치
JP5082459B2 (ja) * 2006-01-20 2012-11-28 東京エレクトロン株式会社 プラズマ処理装置及び天板の製造方法

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