KR101274515B1 - 플라즈마 처리장치 - Google Patents

플라즈마 처리장치 Download PDF

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Publication number
KR101274515B1
KR101274515B1 KR1020110075837A KR20110075837A KR101274515B1 KR 101274515 B1 KR101274515 B1 KR 101274515B1 KR 1020110075837 A KR1020110075837 A KR 1020110075837A KR 20110075837 A KR20110075837 A KR 20110075837A KR 101274515 B1 KR101274515 B1 KR 101274515B1
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KR
South Korea
Prior art keywords
gas
gas discharge
dielectric
discharge plate
vacuum window
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Expired - Fee Related
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KR1020110075837A
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English (en)
Korean (ko)
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KR20130007385A (ko
Inventor
츠토무 데츠카
료지 니시오
Original Assignee
가부시키가이샤 히다치 하이테크놀로지즈
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Publication of KR20130007385A publication Critical patent/KR20130007385A/ko
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020110075837A 2011-06-28 2011-07-29 플라즈마 처리장치 Expired - Fee Related KR101274515B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011143406A JP2013012353A (ja) 2011-06-28 2011-06-28 プラズマ処理装置
JPJP-P-2011-143406 2011-06-28

Publications (2)

Publication Number Publication Date
KR20130007385A KR20130007385A (ko) 2013-01-18
KR101274515B1 true KR101274515B1 (ko) 2013-06-13

Family

ID=47389393

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020110075837A Expired - Fee Related KR101274515B1 (ko) 2011-06-28 2011-07-29 플라즈마 처리장치

Country Status (3)

Country Link
US (1) US20130000847A1 (enExample)
JP (1) JP2013012353A (enExample)
KR (1) KR101274515B1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160049279A1 (en) * 2014-08-14 2016-02-18 Allied Techfinders Co., Ltd. Plasma device
US9673287B2 (en) 2014-12-15 2017-06-06 Infineon Technologies Americas Corp. Reliable and robust electrical contact
JP2017045916A (ja) * 2015-08-28 2017-03-02 パナソニックＩｐマネジメント株式会社 プラズマ処理装置およびプラズマ処理方法
CN105931940B (zh) 2016-06-01 2018-09-21 京东方科技集团股份有限公司 一种电感耦合等离子体装置
CN108573891B (zh) * 2017-03-07 2022-01-11 北京北方华创微电子装备有限公司 等离子体加工设备
JP7182916B2 (ja) * 2018-06-26 2022-12-05 東京エレクトロン株式会社 プラズマ処理装置
JP7313269B2 (ja) * 2019-12-23 2023-07-24 東京エレクトロン株式会社 プラズマ処理装置
JP7623086B2 (ja) * 2021-09-13 2025-01-28 東京エレクトロン株式会社 プラズマ源及びプラズマ処理装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002305184A (ja) * 2001-04-09 2002-10-18 Hitachi Ltd 半導体製造装置
KR20070024258A (ko) * 2005-08-26 2007-03-02 주성엔지니어링(주) 기판처리장치

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4209357A (en) * 1979-05-18 1980-06-24 Tegal Corporation Plasma reactor apparatus
JP3400909B2 (ja) * 1996-02-19 2003-04-28 松下電器産業株式会社 プラズマ処理方法及び装置
JP2943691B2 (ja) * 1996-04-25 1999-08-30 日本電気株式会社 プラズマ処理装置
US6123802A (en) * 1997-09-23 2000-09-26 Micron Technology, Inc. Method and apparatus for preventing plasma formation
US6123775A (en) * 1999-06-30 2000-09-26 Lam Research Corporation Reaction chamber component having improved temperature uniformity
JP5079949B2 (ja) * 2001-04-06 2012-11-21 東京エレクトロン株式会社 処理装置および処理方法
KR100447248B1 (ko) * 2002-01-22 2004-09-07 주성엔지니어링(주) Ｉｃｐ 에쳐용 가스 확산판
WO2005024928A1 (ja) * 2003-09-03 2005-03-17 Tokyo Electron Limited ガス処理装置および放熱方法
JP5082459B2 (ja) * 2006-01-20 2012-11-28 東京エレクトロン株式会社 プラズマ処理装置及び天板の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002305184A (ja) * 2001-04-09 2002-10-18 Hitachi Ltd 半導体製造装置
KR20070024258A (ko) * 2005-08-26 2007-03-02 주성엔지니어링(주) 기판처리장치

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US20130000847A1 (en) 2013-01-03
KR20130007385A (ko) 2013-01-18
JP2013012353A (ja) 2013-01-17

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