JP2011187799A - 表面平坦化方法 - Google Patents
表面平坦化方法 Download PDFInfo
- Publication number
- JP2011187799A JP2011187799A JP2010052956A JP2010052956A JP2011187799A JP 2011187799 A JP2011187799 A JP 2011187799A JP 2010052956 A JP2010052956 A JP 2010052956A JP 2010052956 A JP2010052956 A JP 2010052956A JP 2011187799 A JP2011187799 A JP 2011187799A
- Authority
- JP
- Japan
- Prior art keywords
- polysilicon layer
- frequency power
- mtorr
- less
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 98
- 239000007789 gas Substances 0.000 claims abstract description 120
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 119
- 229920005591 polysilicon Polymers 0.000 claims abstract description 119
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 82
- 229910052786 argon Inorganic materials 0.000 claims abstract description 51
- 239000000758 substrate Substances 0.000 claims abstract description 33
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910001882 dioxygen Inorganic materials 0.000 claims abstract description 18
- 150000001768 cations Chemical class 0.000 claims abstract description 14
- 238000004544 sputter deposition Methods 0.000 claims abstract description 8
- 239000001307 helium Substances 0.000 claims description 24
- 229910052734 helium Inorganic materials 0.000 claims description 24
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 22
- 239000001301 oxygen Substances 0.000 abstract description 41
- 229910052760 oxygen Inorganic materials 0.000 abstract description 41
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 34
- -1 fluorine cations Chemical class 0.000 description 30
- 150000002500 ions Chemical class 0.000 description 19
- 238000005530 etching Methods 0.000 description 16
- 239000004065 semiconductor Substances 0.000 description 7
- 238000003860 storage Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- XJVBHCCEUWWHMI-UHFFFAOYSA-N argon(.1+) Chemical compound [Ar+] XJVBHCCEUWWHMI-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- KMHJKRGRIJONSV-UHFFFAOYSA-N dioxygen(.1+) Chemical compound [O+]=O KMHJKRGRIJONSV-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32105—Oxidation of silicon-containing layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02065—Cleaning during device manufacture during, before or after processing of insulating layers the processing being a planarization of insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Plasma Technology (AREA)
Abstract
【解決手段】基板処理装置のチャンバ内においてポリシリコン層40を表面に有するウエハWの表面を平坦化する際、ウエハWをチャンバ内のサセプタに載置し、チャンバ内の圧力を100mTorr以上乃至800mTorr以下のいずれかに設定し、酸素ガス及びアルゴンガスの混合ガスにおけるアルゴンガスの流量比を50%以上乃至95%以下のいずれかに設定してチャンバ内部へ導入し、周波数が13MHz以上乃至100MHz以下のいずれかに設定されているプラズマ生成用の高周波電力をサセプタに印加して導入された混合ガスを励起し、プラズマを生じさせ、生じたプラズマ中の酸素の陽イオン43やアルゴンの陽イオン44によってウエハWの表面をスパッタする。
【選択図】図2
Description
表面に厚さが492nmのポリシリコン層40を有するウエハWを準備し、上述した図2の表面平坦化方法を実行した。このとき、チャンバ11内の圧力を400mTorrに設定し、混合ガスにおけるアルゴンガスの流量比を92%(酸素ガスの流量:100sccm、アルゴンガスの流量:1100sccm)に設定し、プラズマ生成用の高周波電力の周波数を40MHzに設定し、該高周波電力の出力を800Wに設定した。
表面に厚さが492nmのポリシリコン層40を有するウエハWを準備し、上述した図3の表面平坦化方法を実行した。このとき、チャンバ11内の圧力を400mTorrに設定し、混合ガスにおけるヘリウムガスの流量比を92%(酸素ガスの流量:100sccm、ヘリウムガスの流量:1100sccm)に設定し、プラズマ生成用の高周波電力の周波数を40MHzに設定し、該高周波電力の出力を500Wに設定した。
10 基板処理装置
40 ポリシリコン層
43 酸素の陽イオン
44 アルゴンの陽イオン
46 酸化層
Claims (14)
- 処理室内においてポリシリコン層を表面に有する基板の表面平坦化方法であって、
前記処理室内に酸素ガス及びアルゴンガスからなる混合ガスを導入し、
前記処理室内に高周波電力を印加して前記導入された混合ガスを励起し、プラズマを生じさせ、
前記生じたプラズマ中の陽イオンによって前記基板の表面をスパッタする表面平坦化方法において、
前記処理室内の圧力は100mTorr以上且つ800mTorr以下(13.3Pa以上且つ106.6Pa以下)であり、
前記混合ガスにおけるアルゴンガスの流量比は50%以上且つ95%以下であり、
前記高周波電力の周波数は13MHz以上且つ100MHz以下であることを特徴とする表面平坦化方法。 - 前記処理室内の圧力は400mTorr以上且つ800mTorr以下(53.3Pa以上且つ106.6Pa以下)であることを特徴とする請求項1記載の表面平坦化方法。
- 前記処理室内の圧力は400mTorr以上且つ600mTorr以下(53.3Pa以上且つ80.0Pa以下)であることを特徴とする請求項2記載の表面平坦化方法。
- 前記混合ガスにおけるアルゴンガスの流量比は70%以上且つ95%以下であることを特徴とする請求項1乃至3のいずれか1項に記載の表面平坦化方法。
- 前記高周波電力の周波数は27MHz以上且つ60MHz以下であることを特徴とする請求項1乃至4のいずれか1項に記載の表面平坦化方法。
- 前記高周波電力の出力は500W以上であることを特徴とする請求項1乃至5のいずれか1項に記載の表面平坦化方法。
- 前記高周波電力の出力は800W以上であることを特徴とする請求項6記載の表面平坦化方法。
- 処理室内においてポリシリコン層を表面に有する基板の表面平坦化方法であって、
前記処理室内に酸素ガス及びヘリウムガスからなる混合ガスを導入し、
前記処理室内に高周波電力を印加して前記導入された混合ガスを励起し、プラズマを生じさせ、
前記生じたプラズマ中の陽イオンによって前記基板の表面をスパッタする表面平坦化方法において、
前記処理室内の圧力は100mTorr以上且つ800mTorr以下であり、
前記混合ガスにおけるヘリウムガスの流量比は50%以上且つ95%以下であり、
前記高周波電力の周波数は13MHz以上且つ100MHz以下であることを特徴とする表面平坦化方法。 - 前記処理室内の圧力は400mTorr以上且つ800mTorr以下であることを特徴とする請求項8記載の表面平坦化方法。
- 前記処理室内の圧力は400mTorr以上且つ600mTorr以下であることを特徴とする請求項9記載の表面平坦化方法。
- 前記混合ガスにおけるヘリウムガスの流量比は70%以上且つ95%以下であることを特徴とする請求項8乃至10のいずれか1項に記載の表面平坦化方法。
- 前記高周波電力の周波数は27MHz以上且つ60MHz以下であることを特徴とする請求項8乃至11のいずれか1項に記載の表面平坦化方法。
- 前記高周波電力の出力は500W以上であることを特徴とする請求項8乃至12のいずれか1項に記載の表面平坦化方法。
- 前記高周波電力の出力は800W以上であることを特徴とする請求項13記載の表面平坦化方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010052956A JP5551946B2 (ja) | 2010-03-10 | 2010-03-10 | 表面平坦化方法 |
US13/041,485 US20110220492A1 (en) | 2010-03-10 | 2011-03-07 | Surface planarization method |
KR1020110021018A KR101828082B1 (ko) | 2010-03-10 | 2011-03-09 | 표면 평탄화 방법 |
TW100108094A TWI540633B (zh) | 2010-03-10 | 2011-03-10 | Surface planarization method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010052956A JP5551946B2 (ja) | 2010-03-10 | 2010-03-10 | 表面平坦化方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011187799A true JP2011187799A (ja) | 2011-09-22 |
JP5551946B2 JP5551946B2 (ja) | 2014-07-16 |
Family
ID=44558911
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010052956A Expired - Fee Related JP5551946B2 (ja) | 2010-03-10 | 2010-03-10 | 表面平坦化方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20110220492A1 (ja) |
JP (1) | JP5551946B2 (ja) |
KR (1) | KR101828082B1 (ja) |
TW (1) | TWI540633B (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106783582B (zh) * | 2016-12-22 | 2020-01-03 | 武汉华星光电技术有限公司 | 多晶硅薄膜处理方法、薄膜晶体管、阵列基板及显示面板 |
CN107910255A (zh) * | 2017-11-03 | 2018-04-13 | 武汉新芯集成电路制造有限公司 | 一种提高晶圆界面悬挂键键合的方法 |
JP7378276B2 (ja) * | 2019-11-12 | 2023-11-13 | 東京エレクトロン株式会社 | プラズマ処理装置 |
CN114703461B (zh) * | 2022-04-12 | 2024-03-15 | 浙江水晶光电科技股份有限公司 | 一种化合物薄膜及其制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6207483B1 (en) * | 2000-03-17 | 2001-03-27 | Taiwan Semiconductor Manufacturing Company | Method for smoothing polysilicon gate structures in CMOS devices |
JP2002504752A (ja) * | 1998-02-19 | 2002-02-12 | アプライド マテリアルズ インコーポレイテッド | 化学的および物理的エッチバックを用いて間隙充填ケイパビリティを改良する方法と装置 |
JP2009272657A (ja) * | 2003-05-02 | 2009-11-19 | Tokyo Electron Ltd | プラズマ処理装置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4339300A (en) * | 1977-07-25 | 1982-07-13 | Noble Lowell A | Process for smoothing surfaces of crystalline materials |
US4214946A (en) * | 1979-02-21 | 1980-07-29 | International Business Machines Corporation | Selective reactive ion etching of polysilicon against SiO2 utilizing SF6 -Cl2 -inert gas etchant |
US4465552A (en) * | 1983-08-11 | 1984-08-14 | Allied Corporation | Method of selectively etching silicon dioxide with SF6 /nitriding component gas |
US6740593B2 (en) * | 2002-01-25 | 2004-05-25 | Micron Technology, Inc. | Semiconductor processing methods utilizing low concentrations of reactive etching components |
US7160813B1 (en) * | 2002-11-12 | 2007-01-09 | Novellus Systems, Inc. | Etch back process approach in dual source plasma reactors |
US20090053903A1 (en) * | 2004-08-31 | 2009-02-26 | Tokyo Electron Limited | Silicon oxide film forming method, semiconductor device manufacturing method and computer storage medium |
KR100950470B1 (ko) * | 2007-06-22 | 2010-03-31 | 주식회사 하이닉스반도체 | 반도체 메모리소자의 스토리지전극 형성방법 |
-
2010
- 2010-03-10 JP JP2010052956A patent/JP5551946B2/ja not_active Expired - Fee Related
-
2011
- 2011-03-07 US US13/041,485 patent/US20110220492A1/en not_active Abandoned
- 2011-03-09 KR KR1020110021018A patent/KR101828082B1/ko active IP Right Grant
- 2011-03-10 TW TW100108094A patent/TWI540633B/zh not_active IP Right Cessation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002504752A (ja) * | 1998-02-19 | 2002-02-12 | アプライド マテリアルズ インコーポレイテッド | 化学的および物理的エッチバックを用いて間隙充填ケイパビリティを改良する方法と装置 |
US6207483B1 (en) * | 2000-03-17 | 2001-03-27 | Taiwan Semiconductor Manufacturing Company | Method for smoothing polysilicon gate structures in CMOS devices |
JP2009272657A (ja) * | 2003-05-02 | 2009-11-19 | Tokyo Electron Ltd | プラズマ処理装置 |
Also Published As
Publication number | Publication date |
---|---|
TW201207930A (en) | 2012-02-16 |
KR20110102243A (ko) | 2011-09-16 |
TWI540633B (zh) | 2016-07-01 |
KR101828082B1 (ko) | 2018-02-09 |
US20110220492A1 (en) | 2011-09-15 |
JP5551946B2 (ja) | 2014-07-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN106992121B (zh) | 等离子体蚀刻方法 | |
TWI515789B (zh) | Substrate handling method | |
JP5728221B2 (ja) | 基板処理方法及び記憶媒体 | |
TWI518775B (zh) | 蝕刻處理方法 | |
JP5442403B2 (ja) | 基板処理装置及びそのクリーニング方法並びにプログラムを記録した記録媒体 | |
JP5357710B2 (ja) | 基板処理方法,基板処理装置,プログラムを記録した記録媒体 | |
JP5238556B2 (ja) | 基板処理方法 | |
US8420547B2 (en) | Plasma processing method | |
JP5701654B2 (ja) | 基板処理方法 | |
JP2016197680A (ja) | エッチング方法 | |
JP5486970B2 (ja) | 基板脱着方法及び基板処理装置 | |
JP2009239014A (ja) | 電極構造及び基板処理装置 | |
JP5563860B2 (ja) | 基板処理方法 | |
JP5551946B2 (ja) | 表面平坦化方法 | |
JP5698558B2 (ja) | 基板処理方法及び記憶媒体 | |
JP4684924B2 (ja) | プラズマエッチング方法、プラズマエッチング装置及びコンピュータ記憶媒体 | |
JP2007116031A (ja) | 半導体装置の製造方法、半導体装置の製造装置、制御プログラム及びコンピュータ記憶媒体 | |
US7655572B2 (en) | Semiconductor device manufacturing method, semiconductor device manufacturing apparatus, control program and computer storage medium | |
JP5677482B2 (ja) | パーティクル付着抑制方法及び基板処理装置 | |
JP2007005592A (ja) | プラズマ処理方法、高速プラズマエッチング装置 | |
JP2010114362A (ja) | パーティクル付着抑制方法及び基板処理装置 | |
JP4800077B2 (ja) | プラズマエッチング方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20130308 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20131129 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20131203 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20131218 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140115 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140513 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140523 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5551946 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |