JP2011174763A - 赤外線検出器 - Google Patents
赤外線検出器 Download PDFInfo
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L2224/45099—Material
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- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H01—ELECTRIC ELEMENTS
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
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- H01L2224/48091—Arched
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- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
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- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
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Abstract
【解決手段】赤外線検出素子1が実装されたパッケージ本体4と、パッケージ本体4に気密的に接合されたパッケージ蓋5と、赤外線を透過する第1の無機材料により形成されパッケージ蓋5の開口部5aを塞ぐように配置されたキャップ材6と、赤外線を透過する第2の無機材料により形成されてキャップ材6よりも赤外線検出素子1から離れた位置でパッケージ蓋5の外側に配置されたレンズ7とを備える。レンズ7に、赤外線用の光学フィルタ膜が積層されており、キャップ材6が、パッケージ蓋5に気密的に接合され、レンズ7が、導電性ペーストによりパッケージ蓋5に接合されることでパッケージ蓋5と電気的に接続されている。
【選択図】図1
Description
以下、本実施形態の赤外線検出器について図1を参照しながら説明する。
ところで、図1のように赤外線検出素子1とIC素子2とが同一のパッケージ3内に収納されている場合、IC素子2の発熱に起因した赤外線検出素子1の感度の低下が懸念される。
図3に示す本実施形態の赤外線検出器の基本構成は実施形態2と略同じであり、壁部43上に、赤外線検出素子1とIC素子2との中継用の複数の電極(図示せず)が形成されており、赤外線検出素子1およびIC素子2それぞれのパッドと電極とがボンディングワイヤ73a,73bを介して電気的に接続されている点が相違するだけである。なお、実施形態2と同様の構成要素には同一の符号を付して説明を省略する。
本実施形態の赤外線検出器の基本構成は実施形態3と略同じであり、図4に示すように、キャップ材6がパッケージ5の外側に配置されてパッケージ蓋5に気密的に接合されており、レンズ7が非導電性樹脂からなる接合部79を介してキャップ材6に接合されている点などが相違する。なお、実施形態3と同様の構成要素には同一の符号を付して説明を省略する。
本実施形態の赤外線検出器の基本構成は実施形態3と略同じであって、図5に示すように、パッケージ本体4およびパッケージ蓋5の形状が相違する。なお、実施形態3と同様の構成要素には同一の符号を付して説明を省略する。また、図5では、図3の電磁シールド層44およびビア(サーマルビア)45の図示を省略してある。
本実施形態の赤外線検出器の基本構成は実施形態5と略同じであり、図6に示すように、キャップ材6がパッケージ5の外側に配置されてパッケージ蓋5に気密的に接合されており、レンズ7が非導電性樹脂からなる接合部79を介してキャップ材6に接合されている点などが相違する。なお、実施形態5と同様の構成要素には同一の符号を付して説明を省略する。
3 パッケージ
4 パッケージ本体
5 パッケージ蓋
5a 開口部
6 キャップ材
7 レンズ
65 第1の接合部
75 第2の接合部
76 第3の接合部
Claims (5)
- 赤外線検出素子と、電磁シールド機能を有し前記赤外線検出素子が実装されたパッケージ本体と、金属により形成されて前記赤外線検出素子の前方に開口部を有し前記パッケージ本体に気密的に接合されたパッケージ蓋と、赤外線を透過する第1の無機材料により形成され前記パッケージ蓋の前記開口部を塞ぐように配置されたキャップ材と、赤外線を透過する第2の無機材料により形成されて前記キャップ材よりも前記赤外線検出素子から離れた位置で前記パッケージ蓋の外側に配置されたレンズとを備え、前記レンズに、赤外線用の光学フィルタ膜が積層されてなり、前記キャップ材が、前記パッケージ蓋に気密的に接合され、前記レンズが、導電性ペーストと非導電性樹脂との少なくとも一方により前記パッケージ蓋もしくは前記キャップ材に接合されてなり、前記キャップ材と前記レンズとの少なくとも一方が、前記パッケージ蓋への接合により前記パッケージ蓋と電気的に接続されてなることを特徴とする赤外線検出器。
- 前記キャップ材は、前記パッケージ蓋の内側に配置されてなることを特徴とする請求項1記載の赤外線検出器。
- 前記キャップ材は、前記パッケージ蓋の外側に配置されてなることを特徴とする請求項1記載の赤外線検出器。
- 前記キャップ材と前記パッケージ蓋とは、低融点ガラスにより接合されてなることを特徴とする請求項1ないし請求項3のいずれか1項に記載の赤外線検出器。
- 前記パッケージ蓋の内側にゲッタが形成されてなることを特徴とする請求項1ないし請求項4のいずれか1項に記載の赤外線検出器。
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013175540A (ja) * | 2012-02-24 | 2013-09-05 | Nikon Corp | 固体撮像装置および固体撮像装置の製造方法 |
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JP2013175540A (ja) * | 2012-02-24 | 2013-09-05 | Nikon Corp | 固体撮像装置および固体撮像装置の製造方法 |
EP2828629A1 (en) * | 2012-03-23 | 2015-01-28 | Fraunhofer Gesellschaft zur Förderung der angewandten Forschung e.V. | Electromagnetic radiation micro device, wafer element and method for manufacturing such a micro device |
EP2828629B1 (en) * | 2012-03-23 | 2021-06-16 | Fraunhofer Gesellschaft zur Förderung der angewandten Forschung e.V. | Electromagnetic radiation micro device, wafer element and method for manufacturing such a micro device |
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KR20190102233A (ko) * | 2016-12-30 | 2019-09-03 | 하이만 센서 게엠베하 | Smd-가능 적외선 서모파일 센서 |
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